Philips blv100 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
BLV100
UHF power transistor
Product specification
March 1993
Philips Semiconductors Product specification
UHF power transistor BLV100
FEATURES
• Internal input matching to achieve
high power gain
• Ballasting resistors for an optimum
temperature profile
• Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial transistor
in a SOT171 envelope, intended for
common emitter, class-AB operation
in radio transmitters for the 960 MHz
communications band. The transistor
has a 6-lead flange envelope with a
ceramic cap. All leads are isolated
from the flange.
PINNING - SOT171
PIN DESCRIPTION
1 emitter
2 emitter
3 base
4 collector
5 emitter
6 emitter
PIN CONFIGURATION
lfpage
1
3
5
Top view
2
4
6
MBA931 - 1
handbook, halfpage
MBB012
c
b
e
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance up to T
MODE OF OPERATION
= 25 °C in a common emitter class-AB test circuit.
h
f
(MHz)
V
(V)
CE
P
(W)
L
G
P
(dB)
(%)
c.w. class-AB 960 24 8 > 8 > 50
March 1993 2
η
c
Philips Semiconductors Product specification
UHF power transistor BLV100
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
collector-emitter voltage peak value;
− 50 V
VBE=0
collector-emitter voltage open base − 30 V
emitter-base voltage open collector − 4V
collector current DC or average value − 2.25 A
collector current peak value
− 3.5 A
f > 1 MHz
total power dissipation f > 1 MHz;
− 31 W
Tmb=25°C
storage temperature range −65 150 °C
junction operating temperature − 200 °C
10
handbook, halfpage
I
C
(A)
1
−1
10
110
(1) Second breakdown limit (temperature independent).
Th = 70 °C
Tmb = 25 °C
V
Fig.2 DC SOAR.
THERMAL RESISTANCE
Dissipation = 31 W; T
mb
=25°C.
(1)
CE
(V)
MDA538
60
handbook, halfpage
P
tot
(W)
40
(2)
(1)
20
2
10
0
0
(1) RF operation.
(2) Short time operation during mismatch.
40
80 160
MDA540
120
Th (°C)
Fig.3 Power/temperature derating curve.
SYMBOL PARAMETER MAX. UNIT
R
th j-mb(RF)
R
th mb-h
from junction to mounting base 5.6 K/W
from mounting base to heatsink 0.4 K/W
March 1993 3
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