Philips blt80 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BLT80

UHF power transistor

Product specification
Supersedes data of May 1992

1996 May 09

Philips Semiconductors Product specification

UHF power transistor BLT80

FEATURES

• SMD encapsulation

• Gold metallization ensures excellent reliability.

APPLICATIONS

handbook, halfpage

4

• Hand-held radio equipment in the 900 MHz
communication band.

b

DESCRIPTION

NPN silicon planar epitaxial transistor encapsulated in a
plastic SOT223 SMD package.

PINNING - SOT223

123

Top view

MAM043 - 1

PIN SYMBOL DESCRIPTION

1 e emitter
2 b base
3 e emitter
4 c collector

Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA

RF performance at T

MODE OF OPERATION

≤ 60 °C in a common emitter test circuit (see Fig.7).

s

f

(MHz)

V

(V)

CE

P

(W)

L

G

p

(dB)

CW, class-B narrow band 900 7.5 0.8 ≥6 ≥60

η

(%)

c

e

C

1996 May 09 2

Philips Semiconductors Product specification

UHF power transistor BLT80

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

C(AV)

I

CM

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 10 V
emitter-base voltage open collector − 3V
collector current (DC) − 250 mA
average collector current − 250 mA
peak collector current f > 1 MHz − 750 mA
total power dissipation Ts= 131 °C; note 1 − 2W
storage temperature −65 +150 °C
operating junction temperature − 175 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-s
th j-a

thermal resistance from junction to soldering point P
thermal resistance from junction to ambient P

=2W; Ts= 131 °C; note 1 22 K/W

tot

=2W; T

tot

=25°C; note 2 85 K/W

amb

Note to the “Limiting values” and “Thermal characteristics”

is the temperature at the soldering point of the collector pin.

1. T

s

2. Transistor mounted on a printed-circuit board measuring 40 × 40 × 1 mm, collector pad 35 × 17 mm.

MRA780 - 1

(A)

10

1

I

C

−1

handbook, halfpage

−2

10

11010

Ts= 131°C.

VCE (V)

2

Fig.2 DC SOAR.

1996 May 09 3

Philips Semiconductors Product specification

UHF power transistor BLT80

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CES

h

FE

C

c

C

re

Note

1. Measured under pulsed conditions: t

collector-base breakdown voltage open emitter; IC= 2.5 mA 20 − V
collector-emitter breakdown voltage open base; IC=5mA 10 − V
emitter-base breakdown voltage open collector; IE= 0.5 mA 3 − V
collector leakage current VCE= 10 V; VBE=0 − 0.1 mA
DC current gain VCE=5V; IC= 150 mA; note 1;

25 −

see Fig.3

collector capacitance VCB= 7.5 V; IE=ie= 0; f = 1 MHz;

− 3.5 pF

see Fig.4

feedback capacitance VCE= 7.5 V; IC= 0; f = 1 MHz − 2.5 pF

≤ 200 µs; δ≤0.02.

p

100

handbook, halfpage

h

FE

80

60

40

20

0

0 200 400 600 800

VCE= 7.5 V; tp≤ 200 µs; δ≤0.02; Tj=25°C.

IC (mA)

Fig.3 DC current gain as a function of collector

current; typical values.

MRA776

handbook, halfpage

5

C

c

(pF)

4

3

2

1

0

0 4 8 12 16 20

IE=ie= 0; f = 1 MHz; Tj=25°C.

Fig.4 Collector capacitance as a function of

collector-base voltage; typical values.

MRA773

VCB (V)

1996 May 09 4

Philips Semiconductors Product specification

UHF power transistor BLT80

APPLICATION INFORMATION

RF performance at T

≤ 60 °C in a common emitter test circuit (see note 1 and Fig.7).

s

MODE OF OPERATION

f

(MHz)

CW, class-B narrow band 900 7.5 0.8

V

(V)

CE

P

(W)

L

G

p

(dB)

η

(%)

C

≥6 ≥60

typ. 8 typ.67

Note

1. T

is the temperature at the soldering point of the collector pin.

s

Ruggedness in class-AB operation

The BLT80 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the
following conditions: f = 900 MHz; V

10

handbook, halfpage

G

p

(dB)

G

p

8

6

η

C

4

= 9 V; PL= 0.8 W; Ts≤ 60 °C.

CE

MRA774

100

η

C

(%)

80

60

40

1.5

handbook, halfpage

P

L

(W)

1.2

0.9

0.6

MRA779

2

0

0 0.3 0.6 0.9 1.2 1.5

Class-B; f = 900 MHz; VCE= 7.5 V; Ts≤ 60 °C.

20

0

PL (W)

Fig.5 Power gain and collector efficiency as

functions of load power; typical values.

1996 May 09 5

0.3

0

0 200 400 600

Class-B; f = 900 MHz; VCE= 7.5 V; Ts≤ 60 °C.

Fig.6 Load power as a function of drive

power; typical values.

PD (mW)

Philips Semiconductors Product specification

UHF power transistor BLT80

Test circuit information

handbook, full pagewidth

50 Ω
input

C1

C2

L1

L2

L3

R1

L5

L4

DUT

L6

L7

L8

L10

C5

L9

R2

C8

C7C3

C6C4

50 Ω
output

V

CC

MBB649

Fig.7 Common emitter test circuit for class-B operation at 900 MHz.

List of components used in test circuit (see Figs 7 and 8)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.

C1, C8 multilayer ceramic chip capacitor; note 1 100 pF
C2, C3 type 9105 Voltronix KM10 trimmer 0.6 to 10 pF
C4 multilayer ceramic chip capacitor; note 1 220 pF
C5, C7 film dielectric trimmer 1.4 to 5.5 pF 2222 809 09001
C6 multilayer ceramic chip capacitor; note 1 1 nF
L1 stripline; note 2 50 Ω length 13 mm

width 4.85 mm

L2, L7 1 turn 0.4 mm copper wire on

4330 030 32221

grade 3B core
L3, L8 6 turns enamelled 0.8 mm copper wire internal dia. 3 mm
L4, L9 grade 3B Ferroxcube wideband

4312 020 36640

HF choke
L5 stripline; note 2 50 Ω length 8.4 mm

width 4.85 mm

L6 stripline; note 2 50 Ω length 20 mm

width 4.85 mm

L10 stripline; note 2 50 Ω length 21 mm

width 4.85 mm

R1, R2 metal film resistor 10 Ω, 0.25 W

Notes

1. American Technical Ceramics type 100A or capacitor of same quality.

2. The striplines are on a double copper-clad printed-circuit board, with PTFE fibre-glass dielectric (ε

1

⁄16"; thickness of the copper sheet 35 µm.

1996 May 09 6

= 2.2); thickness

r

Philips Semiconductors Product specification

UHF power transistor BLT80

handbook, full pagewidth

strap

strap

140

strap

80

rivets
(14x)

mounting

screws

(8x)

V

CC

L4

L9

strap

L10

C6

C8C1

C7C5

MBB648

C4

R1

Dimensions in mm.
The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane.

Earth connections from the component side to the ground plane are made by means of fixing screws and copper foil straps under the emitter leads.

L3

L2

L5

L1

C3C2

L6

R2

L8

L7

Fig.8 Printed-circuit board and component lay-out for 900 MHz class-B test circuit in Fig.7.

1996 May 09 7

Philips Semiconductors Product specification

UHF power transistor BLT80

10

handbook, halfpage

Z

i

(Ω)

8

6

4

2

0

800 840 880 920 960 1000

Class-B; VCE= 7.5 V; PL= 0.8 W; Ts≤ 60 °C.

r

i

x

i

MRA777

f (MHz)

Fig.9 Input impedance as a function of frequency

(series components); typical values.

30

handbook, halfpage

Z

L

(Ω)

25

20

15

10

5

0

800 840 880 920 960 1000

Class-B; VCE= 7.5 V; PL= 0.8 W; Ts≤ 60 °C.

R

L

X

L

MRA778

f (MHz)

Fig.10 Load impedance as a function of frequency

(series components); typical values.

10

handbook, halfpage

G

p

(dB)

8

6

4

2

0

800 840 880 920 960 1000

Class-B; VCE= 7.5 V; PL= 0.8 W; Ts≤ 60 °C.

MRA775

f (MHz)

Fig.11 Power gain as a function of

frequency; typical values.

1996 May 09 8

handbook, halfpage

Z

i

Z

L

Fig.12 Definition of transistor impedance.

MBA451

Philips Semiconductors Product specification

UHF power transistor BLT80

PACKAGE OUTLINE

handbook, full pagewidth

16

max

0.95

0.85

6.7

6.3

3.1

2.9

4.6

0.80

0.60

0.1 S

4

B

A

3.7

3.3

0.1 B
(4x)

M

0.2 A

7.3

6.7

M

MSA035 - 1

o

S seating plane

123

2.3

0.32

0.24

0.10

0.01

o

1.80
max

16

10

max

o

Dimensions in mm.

Fig.13 SOT223.

1996 May 09 9

Philips Semiconductors Product specification

UHF power transistor BLT80

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 May 09 10

Philips Semiconductors Product specification

UHF power transistor BLT80

NOTES

1996 May 09 11

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SCDS48 © Philips Electronics N.V. 1996

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127061/1200/02/pp12 Date of release: 1996 May 09
Document order number: 9397750 00836