Philips bls2933-100 Datasheet

BLS2933-100

Microwave power LDMOS transistor

Rev. 01 — 1 August 2006 Product data sheet

1. Product profile

1.1 General description

100 W LDMOS powertransistor(atasupplyvoltageof32 V) forS-bandradarapplications
in the 2.9 GHz to 3.3 GHz frequency range.

Table 1: Typical performance

tp = 200µs;δ = 12 %; T

Mode of operation f V

class AB 2.9 to 3.3 32 100 8 40 20

CAUTION

=25°C; in a class-AB production test circuit.

case

DS

(GHz) (V) (W) (dB) (%) (mA)

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.

P

L

G

p

η

D

I

Dq

1.2 Features

n Easy power control
n Integrated ESD protection
n Excellent ruggedness
n Excellent thermal stability
n Designed for broadband operation (2.9 GHz to 3.3 GHz)
n Internally matched for ease of use

1.3 Applications

n S-band radar applications

Philips Semiconductors

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Symbol

1 drain
2 gate
3 source

[1] connected to flange

3. Ordering information

Table 3. Ordering information

Type number Package

BLS2933-100 - flanged LDMOST ceramic package; 2 mounting

BLS2933-100

Microwave power LDMOS transistor

1

[1]

2

3

Name Description Version

holes; 2 leads

1

2

3

sym112

SOT502A

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

GS

I

D

T

stg

T

j

drain-source voltage - 65 V
gate-source voltage - 15 V
drain current - 12 A
storage temperature −65 +150 °C
junction temperature - 200 °C

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Z

th(j-h)

transientthermalimpedance from
junction to heatsink

Th = 25 °C;
t

= 200 µs; δ =12%

p

0.4 K/W

BLS2933-100_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 01 — 1 August 2006 2 of 12

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6. Characteristics

Table 6. Characteristics

Tj=25°C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V

(BR)DSS

V

GS(th)

V

GSq

I

DSS

I

DSX

I

GSS

g

fs

R

DS(on)

C

rs

BLS2933-100

Microwave power LDMOS transistor

drain-source breakdown
voltage

gate-source threshold voltage VDS=10V;

gate-source quiescent
voltage

drain leakage current VGS= 0 V; VDS=28V - - 2 µA
drain cut-off current VGS=V

gate leakage current VGS=15V; VDS= 0 V - - 200 nA
forward transconductance VDS= 10 V; ID= 10 A - 9.0 - S
drain-source on-state

resistance
feedback capacitance VGS= 0 V; VDS=28V;

VGS= 0 V; ID= 2.1 mA 65 - - V

2.5 3.1 3.5 V

I

= 180 mA

D

VDS=28V;
I

= 900 mA

DS

DS

=6A

D

GS(th)

=10V

GS(th)

V

VGS=V
I

+9V;

+6V;

- 3.3 4.5 V

27 30 - A

- 0.09 - Ω

- 2.5 - pF

f = 1 MHz

7. Application information

Table 7. Application information

RF performance in common source class-AB circuit; Th = 25°C; tp= 200µs;δ = 12 %;
Z

Symbol Parameter Conditions Min Typ Max Unit

f
V
t
δ duty cycle - 12 - %
P
P

G

η

P
t
t
VSWR
IRL input return loss - −10 - dB

= 0.15 K/W; unless otherwise specified.

th(mb-h)

oper

CC

p

L
L(1dB)

operating frequency 2.9 - 3.3 GHz
supply voltage - - 32 V
pulse duration - 200 - µs

output power 100 - - W
output power at 1 dB gain

compression

p

D

droop(pulse)
r
f

power gain 6 8 - dB
drain efficiency 33 40 - %
pulse droop power - 0.1 0.5 dB
rise time - 20 50 ns
fall time - 6 50 ns
load voltage standing wave ratio 10 : 1 - -

load

- 120 - W

BLS2933-100_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 01 — 1 August 2006 3 of 12

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Table 8. Typical impedance

f Z
GHz Ω Ω

2.9 3.3 − j5.6 3.5 − j3.3

3.0 3.7 − j5.3 3.1 − j3.6

3.1 5.9 − j5.8 3.3 − j3.3

3.2 6.8 − j3.4 3.2 − j3.5

3.3 6.6 − j2.7 3.1 − j3.6

BLS2933-100

Microwave power LDMOS transistor

S

drain

Z

L

gate

Z

S

001aaf059

Z

L

Fig 1. Definition of transistor impedance

7.1 Ruggedness in class-AB operation

The BLS2933-100 is capable of withstanding a load mismatch corresponding to
VSWR > 10 : 1 through all phases under the following conditions: VDS=32V;
IDq= 20 mA; PL= 100 W pulsed, tp= 200 µs; δ =12%.

BLS2933-100_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 01 — 1 August 2006 4 of 12

Philips Semiconductors

BLS2933-100

Microwave power LDMOS transistor

10

G

p

(dB)

8

6

4

2

0

2.8 3.43.23.0

001aaf066

η

D

G

p

f (GHz)

50

η

D

(%)

40

30

20

10

0

VDS= 32 V; IDq= 20 mA; tp= 200 µs; δ = 12 %;
PL= 100 W.

Fig 2. Power gain and drain efficiency as functions of

frequency; typical values

10

G

p

(dB)

8

6

4

2

0

0 16012040 80

001aaf070

(1)
(2)
(3)

(4)
(5)

PL (W)

(1) f = 2.9 MHz.
(2) f = 3.0 MHz.
(3) f = 3.1 MHz.
(4) f = 3.2 MHz.
(5) f = 3.3 MHz.

VDS=32V; IDq= 20 mA; tp= 200 µs; δ = 12 %.

Fig 3. Power gain as a function of load power; typical

values

50

η

D

(%)

40

30

20

10

0

0 16012040 80

(1)
(2)
(3)
(4)
(5)

001aaf071

PL (W)

(1) f = 2.9 MHz.
(2) f = 3.0 MHz.
(3) f = 3.1 MHz.
(4) f = 3.2 MHz.
(5) f = 3.3 MHz.

VDS= 32 V; IDq= 20 mA; tp= 200 µs; δ = 12 %.

Fig 4. Efficiency as a function of power load; typical

values

160

P

L

(W)

120

80

40

0

0302010

(1) (2) (3) (4) (5)

001aaf072

Pi (W)

(1) f = 2.9 MHz.
(2) f = 3.0 MHz.
(3) f = 3.1 MHz.
(4) f = 3.2 MHz.
(5) f = 3.3 MHz.

VDS=32V; IDq= 20 mA; tp= 200 µs; δ = 12 %.

Fig 5. Load power as a function of input power;

typical values

BLS2933-100_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 01 — 1 August 2006 5 of 12

Philips Semiconductors

BLS2933-100

Microwave power LDMOS transistor

12

G

p

(dB)

10

8

6

2.8 3.43.23.0

001aaf073

(3)
(2)
(1)

f (GHz)

(1) IDq= 20 mA.
(2) IDq= 150 mA.
(3) IDq= 500 mA.

VDS= 32 V; IDq= 20 mA; tp= 200 µs; δ = 12 %;
PL= 100 W.

Fig 6. Power gain as a function of frequency and IDq;

typical values

10

G

p

(dB)

8

6

4

2.8 3.43.23.0

001aaf074

(1)
(2)
(3)

f (GHz)

(1) tp= 100 µs.
(2) tp= 300 µs.
(3) tp= 500 µs.

VDS=32V; IDq= 20 mA; tp= 100 µs, 200 µs and
500 µs; δ = 10 %; PL= 100 W.

Fig 7. Power gain as a function of frequency; typical

values

50

η

D

(%)

45

40

35

2.8 3.43.23.0

(1) tp= 100 µs.
(2) tp= 300 µs.
(3) tp= 500 µs.

VDS= 32 V; IDq= 20 mA; δ = 10 %; PL= 100 W.

Fig 8. Efficiency as a function of frequency; typical values

001aaf081

(1)
(2)
(3)

f (GHz)

BLS2933-100_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 01 — 1 August 2006 6 of 12

Philips Semiconductors

BLS2933-100

Microwave power LDMOS transistor

1.0

Z

th

(K/W)

0.8

0.6

(1)
(2)
(3)
(4)

0.4

(5)

0.2

0

−5

10

−4

10

−3

10

(1) 1 % duty cycle
(2) 2 % duty cycle
(3) 5 % duty cycle
(4) 10 % duty cycle
(5) 20 % duty cycle

Fig 9. Thermal resistance as function of pulse duration and duty cycle; typical values

001aaf082

−2

t

(s)

p

10

001aaf083

−2

10

P

max

(W)

800

600

400

200

(1)
(2)
(3)
(4)

0

−5

10

−4

10

−3

10

tp (s)

Th=70°C
(1) 1 % duty cycle
(2) 2 % duty cycle
(3) 10 % duty cycle
(4) 20 % duty cycle

Fig 10. Maximum allowable dissipated power as function of pulse duration and duty cycle for reaching 200 °C

junction temperature

BLS2933-100_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 01 — 1 August 2006 7 of 12

Philips Semiconductors

8. Test information

BLS2933-100

Microwave power LDMOS transistor

C2

+Vgs +Vds

R1

C11

C1 C10

BLS2933-100 in BLS2933-100 out

The components are situated on one side of the copper-clad Duroid 6006 Printed-Circuit Board (PCB). Both the input and

output PCB are 40 mm × 60 mm with εr = 6.15 and thickness 0.64 mm.

See Table 9 for list of components

Fig 11. Component layout for test circuit

C3

C4 C5 C6 C7

R2

C8 C9

C12

L1

001aaf084

Table 9. List of components (see Figure 11)

Component Description Value Dimensions Catalogue number

[1]

C1, C2, C4, C5,

multilayer ceramic chip capacitor

22 pF

C6, C7, C10

[2]

C3, C8, C9 multilayer ceramic chip capacitor

470 pF
C11 tantalum capacitor 4.7 µF; 50 V Kemet T491D475K050AS
C12 electrolytic capacitor 220 µF; 63 V
R1 resistor 560 Ω SMD 0805
R2 metafilm resistor 49.9 Ω; 0.6 W
L1 copper wire 1 mm diameter length of loop = 20 mm;

height of loop = 10 mm
N1 N-connector male Suhner 13N-50-057/1
N2 N-connector female Suhner 23N-50-057/1

[1] American Technical Ceramics type 100A or capacitor of same quality.
[2] American Technical Ceramics type 100B or capacitor of same quality.

BLS2933-100_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 01 — 1 August 2006 8 of 12

Philips Semiconductors

BLS2933-100

Microwave power LDMOS transistor

9. Package outline

Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A

D

A

3

D

1

U

1

q

1

H

U

2

A

2

b

w

M M

C

2

0 5 10 mm

scale

F

B

C

L

p

w

M M M

AB

1

c

E

1

Q

E

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

inches

A

4.72

3.43

0.186

0.135

OUTLINE

VERSION

SOT502A

12.83

12.57

0.505

0.495

c

Db

20.02

19.61

0.788

0.772

19.96

19.66

0.786

0.774

0.15

0.08

0.006

0.003

IEC JEDEC JEITA

D

1

EE

9.53

9.50

9.25

9.30

0.374

0.375

0.366

0.364

REFERENCES

1

0.045

0.035

F

1.14

0.89

H

19.94

18.92

0.785

0.745

L

5.33

4.32

0.210

0.170

p

3.38

3.12

0.133

0.123

Q

1.70

1.45

0.067

0.057

qw

PROJECTION

U

U

1

9.91

34.16

9.65

33.91

0.390

1.345

0.380

1.335

EUROPEAN

w

2

0.25 0.5127.94

0.01 0.021.100

2

1

ISSUE DATE

99-12-28
03-01-10

Fig 12. Package outline SOT502A

BLS2933-100_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 01 — 1 August 2006 9 of 12

Philips Semiconductors

Microwave power LDMOS transistor

BLS2933-100

10. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLS2933-100_1 20060801 Product data sheet - -

BLS2933-100_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 01 — 1 August 2006 10 of 12

Philips Semiconductors

11. Legal information

11.1 Data sheet status

BLS2933-100

Microwave power LDMOS transistor

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL

[1][2]

Product status

11.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. Philips Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Philips Semiconductors
sales office. In case of any inconsistency or conflict with the short data sheet,
the full data sheet shall prevail.

11.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, Philips Semiconductors does not give any representations
or warranties, expressed or implied, as to the accuracy or completeness of
such information and shall have no liability for the consequences of use of
such information.

Right to make changes — Philips Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Suitability for use — Philips Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or

[3]

http://www.semiconductors.philips.com.

Definition

malfunction of a Philips Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Philips Semiconductors accepts no liability for inclusion and/or use
of Philips Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Philips Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and and
operation of the device at these or any other conditions above those given in
the Characteristics sections of this document is not implied. Exposure to
limiting values for extended periods may affect device reliability.

Terms and conditions of sale — Philips Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at

http://www.semiconductors.philips.com/profile/terms, including those

pertaining to warranty, intellectual property rights infringement and limitation
of liability, unless explicitly otherwise agreed to in writing by Philips
Semiconductors. In case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyanceor implication of any license under any copyrights, patents
or other industrial or intellectual property rights.

11.4 Trademarks

Notice: All referenced brands,product names, service names and trademarks
are the property of their respective owners.

12. Contact information

For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]

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Product data sheet Rev. 01 — 1 August 2006 11 of 12

Philips Semiconductors

13. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Application information. . . . . . . . . . . . . . . . . . . 3

7.1 Ruggedness in class-AB operation. . . . . . . . . . 4

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12 Contact information. . . . . . . . . . . . . . . . . . . . . 11

13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

BLS2933-100

Microwave power LDMOS transistor

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© Koninklijke Philips Electronics N.V. 2006. All rights reserved.

For more information, please visit: http://www.semiconductors.philips.com.
For sales office addresses, email to: [email protected].

Date of release: 1 August 2006

Document identifier: BLS2933-100_1