Philips bll1214-35 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D381

BLL1214-35

L-band radar LDMOS driver
transistor

Product specification 2002 Sep 27

Philips Semiconductors Product specification

L-band radar LDMOS driver transistor BLL1214-35

FEATURES

• High power gain

• Easy power control

• Excellent ruggedness

• Source on mounting base eliminates DC isolators,

reducing common mode inductance.

APPLICATIONS

• L-band radar applications in the 1200 to 1400 MHz
frequency range.

DESCRIPTION

Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT467C) with a ceramic cap. The common source is
connected to the flange.

QUICK REFERENCE DATA

RF performance at Th=25°C in a common source test circuit.

MODE OF OPERATION

Pulsed class-AB;
t=1ms;δ=10%

f

(MHz)

1200 to 1400 36 35 >13 >43

PINNING - SOT467C

PIN DESCRIPTION

1 drain
2 gate
3 source, connected to flange

1

2

Top view

Fig.1 Simplified outline.

V

(V)

DS

P

(W)

L

3

MBK584

G

(dB)

p

η

D

(%)

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GS

P

tot

T

stg

T

j

drain-source voltage − 75 V
gate-source voltage −±15 V
total power dissipation under RF conditions; Th≤ 25 °C − 110 W
storage temperature −65 +150 °C
junction temperature − 200 °C

2002 Sep 27 2

Philips Semiconductors Product specification

L-band radar LDMOS driver transistor BLL1214-35

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Z

th j-h

Note

1. Thermal resistance is determined under RF operating conditions; t

CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GSth

I

DSS

I

DSX

I

GSS

g

fs

R

DSon

thermal impedance from junction to heatsink Th=25°C; note 1 1.1 K/W

= 1 ms, δ =10%.

p

drain-source breakdown voltage VGS= 0; ID= 0.7 mA 75 −−V
gate-source threshold voltage VDS= 10 V; ID=70mA 4.5 − 5.5 V
drain-source leakage current VGS= 0; VDS=36V −−10 µA
on-state drain current VGS=V

+9V; VDS=10V 10 −−A

GSth

gate leakage current VGS= ±20 V; VDS=0 −−125 nA
forward transconductance VDS= 10 V; ID= 2.5 A − 2 − S
drain-source on-state resistance VGS= 10 V; ID= 2.5 A − 300 − mΩ

APPLICATION INFORMATION

RF performance in a common source class-AB circuit. T

MODE OF OPERATION

Pulsed class-AB;
t=1ms;δ=10%

f

(MHz)

1200 to 1400 36 50 35 >13 >43

=25°C; Z

h

V

DS

(V)

= 0.65 K/W, unless otherwise specified.

th mb-h

I

DQ

(mA)

P

(W)

L

G

(dB)

p

η

D

(%)

Ruggedness in class-AB operation

The BLL1214-35 is capable of withstanding a load mismatch corresponding to VSWR =5:1 through all phases under
the following conditions: V

= 36 V; frequency from 1200 MHz to 1400 MHz at rated load power.

DS

Typical impedance

FREQUENCY

(GHZ)

Z

(Ω)

S

Z

L

(Ω)

1.20 6.48 − j 3.9 1.95 + j 3.27

1.25 3.88 − j 3.2 1.90 + j 2.57

1.30 3.28 − j 2.4 2.01 + j 2.27

1.35 2.55 − j 1.48 2.20 + j 2.26

1.40 1.69 − j 0.51 1.72 + j 2.35

2002 Sep 27 3

Philips Semiconductors Product specification

L-band radar LDMOS driver transistor BLL1214-35

50

handbook, halfpage

P

L

(W)

40

30

20

10

0

(1) f =1.2 GHz. (2) f = 1.3 GHz. (3) f = 1.4 GHz.
t

= 1 ms; δ = 10%.

p

0.2 0.4 0.6 0.8

0

(1) (2) (3)

MLD923

Pi (W)

Fig.2 Load power as a function of input power;

typical values.

20

handbook, halfpage

G

p

(dB)

19

18

17

16

1

15

0

(1) f = 1.2 GHz. (2) f = 1.3 GHz. (3) f = 1.4 GHz.
t

= 1 ms; δ = 10%.

p

10 20 30 40

MLD924

(1)

(2)

(3)

50

PL (W)

Fig.3 Power gain as a function of load power;

typical values.

60

handbook, halfpage

η

(%)

40

20

0

0

10 5020 30 40

(1) f = 1.2 GHz. (2) f = 1.3 GHz. (3) f = 1.4 GHz.
t

= 1 ms; δ = 10%.

p

(3)

(1)

(2)

PL (W)

Fig.4 Efficiency as a function of load power;

typical values.

MLD925

1.4

MLD926

f (GHz)

20

handbook, halfpage

G

p

(dB)

19

18

17

16

15

1.1 1.2

tp= 1 ms; δ = 10%.

η

D

G

p

1.3 1.5

Fig.5 Power gain and efficiency as functions of

frequency; typical values.

60

(%)

50

40

30

20

10

η

D

2002 Sep 27 4

Philips Semiconductors Product specification

L-band radar LDMOS driver transistor BLL1214-35

handbook, full pagewidth

C1

Shaded areas indicate tuning stubs.

List of components (see Fig.6)

C7 C8

C3

C4

C5

C6

R1

Fig.6 Component layout.

C9

C10

C11

C14

C12

C13

MCE033

COMPONENT DESCRIPTION VALUE CATALOGUE NO.

C1, C12 capacitor 51 pF ATC100A
C3 capacitor 6.8 pF ATC100A
C4, C9 capacitor 47 pF ATC100A
C6, C7 capacitor 4.7 µF/50 V 475 50k 952
C5, C8 capacitor 2.3 nF ATC100B
C10 capacitor 2.7 pF ATC100A
C11 capacitor 1.0 pF ATC100A
C13, C14 capacitor 1.5 pF ATC100A
R1 chip resistor 82 Ω

2002 Sep 27 5

Philips Semiconductors Product specification

L-band radar LDMOS driver transistor BLL1214-35

PACKAGE OUTLINE

Flanged LDMOST ceramic package; 2 mounting holes; 2 leads

D

A

3

D

1

U

1

q

1

H

U

2

C

F

B

SOT467C

c

E

1

E

A

p

2

w

M M

scale

18.54

17.02

0.73

0.67

C

2

3.43

3.18

0.135

0.125

b

0 5 10 mm

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

inch

OUTLINE
VERSION

SOT467C

A

4.67

3.94

0.184

0.155

b

5.59

5.33

0.220

0.210

cD

0.15

0.10

0.006

0.004

IEC JEDEC EIAJ

9.25

9.04

0.364

0.356

D

1

9.27

9.02

0.365

0.355

E

5.92

5.77

0.233

0.227

0.235

0.225

REFERENCES

FH p q

E

1

5.97

1.65

5.72

1.40

0.065

0.055

w

M MM

1

Q

2.21

1.96

0.087

0.077

AB

14.27

0.562

U

1

20.45

20.19

0.805

0.795

Q

U

w

2

1

5.97

0.25

5.72

0.235

0.010 0.020

0.225

EUROPEAN

PROJECTION

w

2

0.51

ISSUE DATE

99-12-06
99-12-28

2002 Sep 27 6

Philips Semiconductors Product specification

L-band radar LDMOS driver transistor BLL1214-35

DATA SHEET STATUS

PRODUCT

DATA SHEET STATUS

Objective data Development This data sheet contains data from the objective specification for product

Preliminary data Qualification This data sheet contains data from the preliminary specification.

Product data Production This data sheet contains data from the product specification. Philips

(1)

STATUS

(2)

DEFINITIONS

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting valuesdefinition  Limitingvalues givenare in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese orat anyotherconditionsabovethose givenin the
Characteristics sectionsof the specification isnot implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation orwarrantythat suchapplications willbe
suitable for the specified use without further testing or
modification.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably beexpected toresult inpersonal injury.Philips
Semiconductorscustomers usingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuse ofany oftheseproducts, conveysnolicence ortitle
under any patent, copyright, or mask work right to these
products,and makesno representationsor warrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

2002 Sep 27 7

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Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
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© Koninklijke Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document doesnot formpart of any quotation or contract, isbelieved to be accurate and reliable and may bechanged
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 613524/01/pp8 Date of release: 2002 Sep 27 Document order number: 9397 750 09541

SCA74