Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D379
BLL1214-250
L-band radar LDMOS transistor
Product specification
Supersedes data of 2002 Aug 06
2003 Aug 29
Page 2
Philips Semiconductors Product specification
L-band radar LDMOS transistor BLL1214-250
FEATURES
• High power gain
• Easy power control
• Excellent ruggedness
• Source on mounting base eliminates DC isolators,
reducing common mode inductance.
APPLICATIONS
• L-band radar applications in the 1200 to 1400 MHz
frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT502A) with a ceramic cap. The common source is
connected to the flange.
QUICK REFERENCE DATA
RF performance at Th=25°C in a common source test circuit.
MODE OF
OPERATION
Pulsed class-AB;
t
= 1 ms; δ = 10%
p
f
(MHz)
V
(V)
DS
1200 to 1400 36 150 250 >12 >42 <0.6 <100 <100
I
DQ
(mA)
PINNING - SOT502A
PIN DESCRIPTION
1 drain
2 gate
3 source, connected to flange
handbook, halfpage
Top view
1
2
Fig.1 Simplified outline.
P
(W)
L
G
(dB)
p
η
(%)
D
droop
pulse
(dB)
3
MBK394
t
r
(ns)
t
f
(ns)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
GS
P
tot
T
stg
T
j
drain-source voltage − 75 V
gate-source voltage −±22 V
total power dissipation Th≤ 70 °C; tp= 1 ms; δ = 10% − 400 W
storage temperature −65 150 °C
junction temperature − 200 °C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2003 Aug 29 2
Page 3
Philips Semiconductors Product specification
L-band radar LDMOS transistor BLL1214-250
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Z
th j-h
Z
th j-h
Notes
1. Thermal resistance is determined under RF operating conditions; tp= 100 µs, δ = 10%.
2. Thermal resistance is determined under RF operating conditions; tp= 1 ms, δ = 10%.
CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
thermal impedance from junction to heatsink Th=25°C, note 1 0.17 K/W
thermal impedance from junction to heatsink Th=25°C, note 2 0.32 K/W
drain-source breakdown voltage VGS= 0; ID= 3 mA 75 −−V
gate-source threshold voltage VDS= 10 V; ID= 300 mA 4 − 5V
drain-source leakage current VGS= 0; VDS=36V −−1µA
on-state drain current VGS=V
+9V; VDS=10V 45 −−A
GSth
gate leakage current VGS= ±20 V; VDS=0 −−1µA
forward transconductance VDS= 10 V; ID=10A − 9 − S
drain-source on-state resistance VGS=9V; ID=10A − 60 − mΩ
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
MODE OF
OPERATION
Pulsed class-AB;
= 1 ms; δ = 10%
t
p
f
(MHz)
V
(V)
DS
1200 to 1400 36 150 250 >12 >42 <0.6 <100 <100
I
DQ
(mA)
=25°C; Z
h
P
(W)
L
= 0.25 K/W, unless otherwise specified.
th mb-h
G
(dB)
p
η
(%)
pulse
D
droop
(dB)
t
r
(ns)
t
f
(ns)
Ruggedness in class-AB operation
The BLL1214-250 iscapable of withstanding a load mismatch corresponding to VSWR=3:1through all phases under
the following conditions: V
= 36 V; frequency from 1200 MHz to 1400 MHz at rated load power.
DS
Typical impedance
FREQUENCY
(GHZ)
Z
(Ω)
S
Z
L
(Ω)
1.20 1.3 − j 2.8 1.1 − j 0.9
1.25 1.9 − j 2.9 1.0 − j 0.5
1.30 4.6 − j 2.9 0.8 − j 0.2
1.35 5.7 − j 0.3 0.7 − j 0.3
1.40 2.7 − j 1.8 0.6 − j 0.4
2003 Aug 29 3
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Philips Semiconductors Product specification
L-band radar LDMOS transistor BLL1214-250
300
handbook, halfpage
P
L
(W)
200
100
0
048
(1) f = 1.2 GHz. (2) f = 1.3 GHz. (3) f = 1.4 GHz.
tp= 1 ms; δ = 10%.
(3)
(2)
(1)
12
P
i
Fig.2 Load power as function of input power;
typical values.
MLD858
(W)
12
P
MLD859
16
(W)
i
300
handbook, halfpage
P
L
(W)
200
100
16
0
(1) f = 1.2 GHz. (2) f = 1.3 GHz. (3) f = 1.4 GHz.
tp= 100 µs; δ = 10%.
(3)
(2)
(1)
048
Fig.3 Load power as function of input power;
typical values.
16
handbook, halfpage
G
p
(dB)
12
8
4
0
0 100
(1) f = 1.2 GHz. (2) f = 1.3 GHz. (3) f = 1.4 GHz.
tp= 1 ms; δ = 10%.
(3)
(1)
(2)
200
PL (W)
Fig.4 Power gain as function of load power;
typical values.
MLD860
300
16
handbook, halfpage
G
p
(dB)
12
8
4
0
0 100
(1) f = 1.2 GHz. (2) f = 1.3 GHz. (3) f = 1.4 GHz.
tp= 100 µs; δ = 10%.
(3)
(1)
(2)
200
PL (W)
Fig.5 Power gain as function of load power;
typical values.
MLD861
300
2003 Aug 29 4
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Philips Semiconductors Product specification
L-band radar LDMOS transistor BLL1214-250
60
handbook, halfpage
η
D
(%)
40
20
0
0
(1) f = 1.2 GHz. (2) f = 1.3 GHz. (3) f = 1.4 GHz.
tp= 1 ms; δ = 10%.
100 300200
(1)
(2)
(3)
PL (W)
Fig.6 Efficiency as function of load power;
typical values.
MLD862
60
handbook, halfpage
η
D
(%)
40
20
0
0
(1) f = 1.2 GHz. (2) f = 1.3 GHz. (3) f = 1.4 GHz.
tp= 100 µs; δ = 10%.
(1)
(2)
(3)
100 300200
PL (W)
Fig.7 Efficiency as function of load power;
typical values.
MLD863
15
handbook, halfpage
G
p
(dB)
14
13
12
11
10
1.15 1.25
tp= 1 ms; δ = 10%.
η
D
G
p
1.35 1.45
MLD864
f (GHz)
Fig.8 Powergainanddrainefficiency as functions
of frequency; typical values.
60
50
40
30
20
10
η
(%)
MLD865
15
handbook, halfpage
D
G
p
(dB)
14
13
12
11
10
1.15 1.25
tp= 100 µs; δ = 10%.
G
p
η
D
1.35 1.45
f (GHz)
60
50
40
30
20
10
η
(%)
D
Fig.9 Powergainanddrainefficiency as functions
of frequency; typical values.
2003 Aug 29 5
Page 6
Philips Semiconductors Product specification
L-band radar LDMOS transistor BLL1214-250
handbook, full pagewidth
40 40
60
C8
C4 & C6
C7
C3 & C5
C1
Dimensions in mm.
Hatched area indicates standard tuning.
The components are situated on one side of the copper-clad Rodgers Duroid 6010 printed-circuit board (ε
The other side is unetched and serves as a ground plane.
Fig.10 Component layout.
2003 Aug 29 6
C2
MLD866
= 10.2, thickness = 0.64 mm).
r
Page 7
Philips Semiconductors Product specification
L-band radar LDMOS transistor BLL1214-250
List of components (see Fig.10)
COMPONENT DESCRIPTION VALUE CATALOGUE NO.
C1, C3 capacitor 39 pF ATC100A
C2, C4 capacitor 47 pF ATC100A
C5, C6 capacitor 20 nF ATC200B
C7 capacitor 36 pF ATC200B
C8 electrolytic capacitor 100 µF; 100 V
2003 Aug 29 7
Page 8
Philips Semiconductors Product specification
L-band radar LDMOS transistor BLL1214-250
PACKAGE OUTLINE
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A
D
A
3
D
1
U
1
q
1
H
U
2
A
2
b
w
M M
C
2
0 5 10 mm
scale
F
B
C
L
p
w
M M M
AB
1
c
E
1
Q
E
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
inches
A
4.72
3.43
0.186
0.135
OUTLINE
VERSION
SOT502A
12.83
12.57
0.505
0.495
c
Db
20.02
19.61
0.788
0.772
19.96
19.66
0.786
0.774
0.15
0.08
0.006
0.003
IEC JEDEC JEITA
D
1
EE
9.53
9.50
9.25
9.30
0.375
0.374
0.364
0.366
REFERENCES
1
1.14
0.89
0.045
0.035
F
H
19.94
18.92
0.785
0.745
2003 Aug 29 8
L
5.33
4.32
0.210
0.170
p
3.38
3.12
0.133
0.123
Q
1.70
1.45
0.067
0.057
qw
U
1
34.16
33.91
1.345
1.335
EUROPEAN
PROJECTION
w
U
9.91
9.65
0.390
0.380
2
0.25 0.5127.94
0.01 0.021.100
2
1
ISSUE DATE
99-12-28
03-01-10
Page 9
Philips Semiconductors Product specification
L-band radar LDMOS transistor BLL1214-250
DATA SHEET STATUS
LEVEL
DATA SHEET
STATUS
(1)
PRODUCT
STATUS
(2)(3)
DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswill be
suitable for the specified use without further testing or
modification.
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
2003 Aug 29 9
Page 10
Philips Semiconductors – a w orldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands 613524/03/pp10 Date of release: 2003 Aug 29 Document order number: 9397 750 11576
SCA75
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