Philips blf888 Datasheet

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Page 1

BLF888

UHF power LDMOS transistor

Rev. 5 — 21 January 2011 Product data sheet

1. Product profile

1.1 General description

A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W average DVB-T broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness of this device makes it ideal for digital transmitter applications.

Table 1. Application information

RF performance at V otherwise specified.

Mode of operation f P

2-Tone, class AB f DVB-T (8k OFDM) 858 - 110 19 31 - 31

= 50 V in a common source 860 MHz narrowband test circuit unless

L(PEP)PL(AV)Gp

(MHz) (W) (W) (dB) (%) (dBc) (dBc)

= 860; f2= 860.1 500 250 19 46 32 -



IMD3 IMD

shldr

[1]

CAUTION

[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

1.2 Features and benefits

 2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent

drain current I

 Peak envelope power load power = 500 W  Power gain = 19 dB  Drain efficiency = 46 %  Third order intermodulation distortion = 32 dBc

 DVB performance at 858 MHz, a drain-source voltage V

drain current I

 Average output power = 110 W  Power gain = 19 dB  Drain efficiency = 31 %

 Shoulder distance = 31 dBc (4.3 MHz from center frequency)  Integrated ESD protection  Advanced flange material for optimum thermal behavior and reliability

=1.3A:

of 50 V and a quiescent

Page 2

NXP Semiconductors

sym117

 Excellent ruggedness  High power gain  High efficiency  Designed for broadband operation (470 MHz to 860 MHz)  Excellent reliability  Internal input matching for high gain and optimum broadband operation  Easy power control  Compliant to Directive 2002/95/EC, regarding Restriction of Hazard ous Sub s tances

(RoHS)

1.3 Applications

 Communication transmitter applications in the UHF band  Industrial applications in the UHF band

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1drain1 2drain2 3 gate1 4 gate2 5 source

BLF888

UHF power LDMOS transistor

[1]

[1] Connected to flange.

3. Ordering information

Table 3. Ordering information

Type number Package

Name Description Version

BLF888 - flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT979A

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

stg

Product data sheet Rev. 5 — 21 January 2011 2 of 17

drain-source voltage - 104 V gate-source voltage 0.5 +11 V storage temperature 65 +150 C junction temperature - 200 C

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NXP Semiconductors

5. Thermal characteristics

BLF888

UHF power LDMOS transistor

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Unit

th(j-c)

[1] R

thermal resistance from junction to case T

is measured under RF conditions.

th(j-c)

case

=80C; P

L(AV)

=110W

[1]

0.24 K/W

6. Characteristics

Table 6. DC characteristics

=25C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

(BR)DSS

GS(th)

DSS

DSX

GSS

DS(on)

iss

oss

rss

drain-source breakdown voltage VGS=0V; ID= 2.7 mA gate-source threshold voltage VDS= 10 V; ID=270 mA drain leakage current VGS=0V; VDS=50V --2.8A drain cut-off current VGS=V gate leakage current VGS=10V; VDS= 0 V - - 280 nA forward transconductance VDS=10V; ID= 13.5 A drain-source on-state resistance VGS=V input capacitance VGS= 0 V; VDS=50V; f=1MHz output capacitance VGS= 0 V; VDS=50V; f=1MHz reverse transfer capacitance VGS= 0 V; VDS=50V; f=1MHz

[1]

104 - - V

[1]

1.4 1.9 2.4 V

+ 3.75 V; VDS=10V - 43 - A

GS(th)

[1]

-17-S

+ 3.75 V; ID=9.5A

GS(th)

[1]

- 105 - m

[2]

- 205 - pF

[2]

-65-pF

[2]

-2.2-pF

[1] ID is the drain current. [2] Capacitance values without internal matching.

Table 7. RF characteristics

Th=25C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

2-Tone, class AB

L(PEP)

L(AV)



drain-source voltage - 50 - V quiescent drain current total device - 1.3 - A peak envelope power load power 500 - - W average output power 250 - - W power gain 18 19 - dB drain efficiency 42 46 - %

IMD3 third-order intermodulation distortion - 32 28 dBc

DVB-T (8k OFDM)

V I P G

L(AV) p

drain-source voltage - 50 - V quiescent drain current total device - 1.3 - A average output power 110 - - W power gain 18 19 - dB

Product data sheet Rev. 5 — 21 January 2011 3 of 17

Page 4

NXP Semiconductors

001aaj274

VDS (V)

0604020

150

100

200

250

oss

(pF)

BLF888

UHF power LDMOS transistor

Table 7. RF characteristics

…continued

Th=25C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit



IMD

shldr

PAR peak-to-average ratio

[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency. [2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.

drain efficiency 28 31 - % intermodulation distortion shoulder

[1]

- 31 28 dBc

[2]

-8.3-dB

VGS = 0 V; f = 1 MHz.

Fig 1. Output capacitance as a function of drain-source voltage; typical values per

section; capacitance value without internal matching

6.1 Ruggedness in class-AB operation

The BLF888 is capable of withstanding a load mismatch corr esponding to VSWR = 10 : 1 through all phases under the following conditions: V power. Ruggedness is measured in the application circuit as described in Section 8

= 50 V; f = 860 MHz at rated

Product data sheet Rev. 5 — 21 January 2011 4 of 17

Page 5

NXP Semiconductors

PL (W)

0 400300100 200

001aak641

(dB)

(%)

PL (W)

0 400300100 200

001aak642

(dB)

IMD3 (dBc)

−40

−20

−50

−30

−10

−60

IMD3

7. Application information

7.1 Narrowband RF figures

7.1.1 2-Tone

BLF888

UHF power LDMOS transistor

VDS = 50 V; IDq= 1.3 A; measured in a common source narrowband 860 MHz test circuit.

Fig 2. 2-Tone power gain and drain efficiency as

function of load power; typical values

Fig 3. 2-Tone power gain and third order

VDS = 50 V; IDq= 1.3 A; measured in a common source narrowband 860 MHz test circuit.

intermodulation distortion as function of load power; typical values

Product data sheet Rev. 5 — 21 January 2011 5 of 17

Page 6

NXP Semiconductors

PL (W)

0 100 200 300 35025015050

001aak643

(dB)

IMD

shldr

(dBc)

−40

−20

−60

−30

−10

−50

IMD

shldr

PL (W)

0 100 200 300 35025015050

001aak644

PAR (dB)

(%)

−10

−50

−30

PAR

f (MHz)

400 900800600 700500

001aak645

(dB)

(%)

f (MHz)

400 900800600 700500

001aak646

(dB)

IMD3 (dBc)

−30

−40

−20

−10

−35

−45

−25

−15

−50

IMD3

7.1.2 DVB-T

BLF888

UHF power LDMOS transistor

VDS = 50 V; IDq= 1.3 A; measured in a common source narrowband 860 MHz test circuit.

Fig 4. DVB-T power gain and intermodulation

distortion shoulder as function of load power; typical values

7.2 Broadband RF figures

7.2.1 2-Tone

VDS = 50 V; IDq= 1.3 A; measured in a common source narrowband 860 MHz test circuit.

Fig 5. DVB-T peak-to-average ratio and drain

efficiency as function of load power; typical values

= 250 W; VDS = 50 V; IDq= 1.3 A; measured in a

L(AV)

common source broadband test circuit as described in

Section 8

Fig 6. 2-Tone power gain and drain efficiency as

function of frequency; typical values

Product data sheet Rev. 5 — 21 January 2011 6 of 17

= 250 W; VDS = 50 V; IDq= 1.3 A; measured in a

L(AV)

common source broadband test circuit as described in

Section 8

Fig 7. 2-Tone power gain and third order

intermodulation distortion as function of frequency; typical values

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NXP Semiconductors

f (MHz)

400 900800600 700500

001aak647

7.5

6.5

8.5

9.5

PAR (dB)

5.5

(%)

PAR

f (MHz)

400 900800600 700500

001aak648

(dB)

IMD

shldr

(dB)

−30

−40

−20

−10

−50

IMD

shldr

001aai086

gate

drain

7.2.2 DVB-T

BLF888

UHF power LDMOS transistor

= 110 W; VDS = 50 V; IDq= 1.3 A; measured in a

L(AV)

common source broadband test circuit as described in

Section 8

Fig 8. DVB-T peak-to-average ratio and drain

efficiency as function of frequency; typical values

Fig 9. DVB-T power gain and intermodulation

= 110 W; VDS = 50 V; IDq= 1.3 A; measured in a

L(AV)

common source broadband test circuit as described in

Section 8

distortion shoulder as a function of freq uency; typical values

7.3 Impedance information

Fig 10. Definition of transistor impedanc e

Table 8. Typical push-pull impedance

Simulated Z

f Z MHz  

300 1.018  j1.350 5.565 + j0.747 325 1.045  j1.022 5.435 + j0.752 350 1.076  j0.722 5.303 + j0.746 375 1.110  j0.444 5.167 + j0.730 400 1.148  j0.183 5.030 + j0.704 425 1.190 + j0.064 4.892 + j0.668 450 1.238 + j0.299 4.754 + j0.622 475 1.291 + j0.526 4.617 + j0.567

Product data sheet Rev. 5 — 21 January 2011 7 of 17

500 1.351 + j0.746 4.481 + j0.504

and ZL device impedance; impedance info at VDS = 50 V and P

= 600 W (DVB-T).

L(PEP)

Page 8

NXP Semiconductors

BLF888

UHF power LDMOS transistor

Table 8. Typical push-pull impedance

Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and P

f Z MHz  

525 1.417 + j0.961 4.346 + j0.432 550 1.492 + j1.171 4.214 + j0.353 575 1.577 + j1.378 4.084 + j0.266 600 1.672 + j1.582 3.958 + j0.173 625 1.779 + j1.783 3.834 + j0.074 650 1.901 + j1.983 3.713  j0.031 675 2.039 + j2.180 3.596  j0.142 700 2.196 + j2.373 3.482  j0.257 725 2.376 + j2.563 3.372  j0.377 750 2.581 + j2.745 3.266  j0.501 775 2.817 + j2.918 3.163  j0.628 800 3.087 + j3.076 3.064  j0.759 825 3.395 + j3.212 2.968  j0.893 850 3.746 + j3.317 2.876  j1.030 875 4.142 + j3.377 2.787  j1.170 900 4.583 + j3.374 2.701  j1.312 925 5.063 + j3.288 2.619  j1.455 950 5.566 + j3.094 2.540  j1.601 975 6.064 + j2.770 2.464  j1.749 1000 6.514 + j2.299 2.391  j1.898

…continued

L(PEP)

= 600 W (DVB-T).

Product data sheet Rev. 5 — 21 January 2011 8 of 17

Page 9

NXP Semiconductors

001aak649

Years

DS(DC)

(A)

0 2416842012

(1) (2) (3) (4) (5) (6)

(7) (8)

(9) (10) (11)

7.4 Reliability

BLF888

UHF power LDMOS transistor

8. Test information

Table 9. List of components

For test circuit, see Figure 12

Component Description Value Remarks

B1, B2 semi rigid coax 25 ; 49.5 mm EZ90-25-TP C1 multilayer ceramic chip capacitor 12 pF C2, C9, C10 multilayer ceramic chip capacitor 10 pF C3 multilayer ceramic chip capacitor 4.7 pF C4, C5, C6 multilayer ceramic ch ip capacitor 8.2 pF C7 multilayer ceramic chip capacitor 5.6 pF C8, C13, C14 multilayer ceramic chip capacitor 100 pF C1 1 , C12 multilayer ceramic chip capacitor 2 .0 pF

TTF (0.1 % failure fraction). The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %)  1 / .

= 100 C

(1) T

= 110 C

(2) T

(3) T

= 120 C

= 130 C

(4) T

= 140 C

(5) T

(6) T

= 150 C

= 160 C

(7) T

= 170 C

(8) T

(9) T

= 180 C

= 190 C

(10) T

= 200 C

(11) T

Fig 11. BLF888 electromigration (I

, Figure 13 and Figure 14.

DS(DC)

, total device)

[1] [1] [2] [1] [2] [1] [2]

Product data sheet Rev. 5 — 21 January 2011 9 of 17

Page 10

NXP Semiconductors

BLF888

UHF power LDMOS transistor

Table 9. List of components

…continued

For test circuit, see Figure 12, Figure 13 and Figure 14.

Component Description Value Remarks

C15, C16 multilayer ceramic chip capacitor 4.7 F, 50 V TDK C4532X7R1E475MT020U or

capacitor of same quality.

C17, C18 multilayer ceramic chip capacitor 100 pF

[2]

C19, C20 multilayer ceramic chip capacitor 10 F, 50 V TDK C570X7R1H106KT000N or

capacitor of same quality. C21, C22 electrolytic capacitor 470 F; 63 V C30, C31 multilayer ceramic chip capacitor 10 pF C32 multilayer ceramic chip capacitor 5.6 pF C33, C34, C35 multilayer ceramic chip capacitor 100 pF

[3] [3] [3]

C36, C37 multilayer ceramic chip capacitor 4.7 F TDK C4532X7R1E475MT020U or

capacitor of same quality.

[4]

L1 microstrip L2 microstrip L3, L32 microstrip L4 microstrip L5 microstrip L30 microstrip L31 microstrip L33 microstrip -

(W  L) 15 mm  13 mm

[4]

(W  L) 5 mm  26 mm

[4]

(W  L) 2 mm  49.5 mm

[4]

(W  L) 1.7 mm 3.5 mm

[4]

(W  L) 2 mm  9.5 mm

[4]

(W  L) 5 mm  13 mm

[4]

(W  L) 2 mm  11 mm

[4]

(W  L) 2 mm  3mm R1, R2 resistor 10  R3, R4 resistor 5.6  R5, R6 resistor 100  R7, R8 potentiometer 1 k

[1] American technical ceramics type 180R or capacitor of same quality. [2] American technical ceramics type 100B or capacitor of same quality. [3] American technical ceramics type 100A or capacitor of same quality. [4] Printed-Circuit Board (PCB): Taconic RF35; 

thickness copper plating = 35 m.

Product data sheet Rev. 5 — 21 January 2011 10 of 17

= 3.5 F/m; height = 0.76 mm; Cu (top/bottom metallization);

Page 11

Product data sheet Rev. 5 — 21 January 2011 11 of 17

001aak650

G1(test)

D1(test)

D2(test)

R3 C34

C33

L33

C32 C31

C30

C19

C20

C9 C15

50 Ω50 Ω

C21

C22

C13

C16C14

C2 C4C3C6

C11

C10C12

C17

C18

C36

G2(test)

R4 C35

C37

L32

L30

L31

xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx

xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx

NXP Semiconductors

See Table 9 for a list of components.

Fig 12. Class-AB common-source broadband amplifier; V

, V

D1(test)

D2(test)

, V

G1(test)

and V

are drain and gate test voltages

G2(test)

UHF power LDMOS transistor

BLF888

Page 12

NXP Semiconductors

001aak651

L33

L32

105 mm

L31

L30

L31

001aak652

G1(test)

D1(test)

D2(test)

G2(test)

C19

C17

C18

6.5 mm

C20

C34

C36

C37

C32

C31

C2 C4

19.5 mm 2 mm

C5 C6

C11

C21

C22

C21

C12

C13

C14

C15

C16

C10

C1 C3

C30

C33

50 Ω 50

9 mm

31.5 mm

C35

−

Fig 13. Printed-Circuit Board (PCB) for class-AB common source amplifier

BLF888

UHF power LDMOS transistor

See Table 9 for a list of components.

Product data sheet Rev. 5 — 21 January 2011 12 of 17

Fig 14. Component layout for class-AB common source amplifier

Page 13

NXP Semiconductors

References

Outline version

European projection

Issue date

IEC JEDEC JEITA

SOT979A

sot979a_po

Flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT979A

B C

w1 A B

w2 C

Unit

(1)

max nom

min

5.77

4.80

11.81

11.56

31.55

30.94

31.37

31.12

10.29

10.03

10.29

10.03

1.969

1.689

17.50

17.25

3.86

3.35

41.28

41.02

10.29

10.03

Dimensions

0.15

0.10

DD1EE

0.51

13.72

FHH

25.53

25.27

3.30

3.05

3.02

2.77

35.56

1U2

0.25

inches

max nom

min

0.227

0.189

0.465

0.455

1.242

1.218

1.235

1.225

0.405

0.395

0.405

0.395

0.078

0.067

0.689

0.679

0.152

0.132

1.625

1.615

0.405

0.395

0.006

0.004

0.020

0.25

0.010

0.540

1.005

0.995

0.130

0.120

0.119

0.109

1.400 0.010

0 5 10 mm

scale

Note

1. millimeter dimensions are derived from the original inch dimensions.

08-04-24 08-09-04

UHF power LDMOS transistor

9. Package outline

BLF888

Fig 15. Package outline SOT979A

Product data sheet Rev. 5 — 21 January 2011 13 of 17

Page 14

NXP Semiconductors

10. Abbreviations

Table 10. Abbreviations

Acronym Description

CCDF Complementary Cumulative Distribution Function DVB Digital Video Broadcast DVB-T Digital Video Broadcast - Terrestrial LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor OFDM Orthogonal Frequ ency Division Multiplexing PAR Peak-to-Average power Ratio RF Radio Frequency TTF Time To Failure UHF Ultra High Frequency VSWR Voltage Standing-Wave Ratio

BLF888

UHF power LDMOS transistor

11. Revision history

Table 11. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLF888 v.5 20110121 Product data sheet - BLF888 v.4 Modifications: BLF888 v.4 20100429 Product data sheet - BLF888 v.3 BLF888 v.3 20100211 Product data sheet - BLF888 v.2 BLF888 v.2 20091022 Preliminary data sheet - BLF888 v.1 BLF888 v.1 20081216 Objective data sheet - -

• Table 6 on page 3: in the conditions column of g

the symbol VGS has been changed to VDS.

Product data sheet Rev. 5 — 21 January 2011 14 of 17

Page 15

NXP Semiconductors

BLF888

UHF power LDMOS transistor

12. Legal information

12.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this docu ment may have change d since this d ocument was p ublished and may dif fe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

[1][2]

Product status

[3]

Definition

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

12.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconduct ors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.

NXP Semiconductors does not accept any liability related to any default , damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third part y customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell product s that is open for accept ance or the gr ant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

, unless otherwise

Product data sheet Rev. 5 — 21 January 2011 15 of 17

Page 16

NXP Semiconductors

BLF888

UHF power LDMOS transistor

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It i s neit her qua lif ied nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, custome r (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed produ ct claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.

12.4 Licenses

ICs with DVB-T or DVB-T2 functionality

Use of this product in any manner that complies with the DVB-T or the DVB-T2 standard may require licenses under applicable patents of the DVB-T respectively the DVB-T2 patent portfolio, which license is available from Sisvel S.p.A., Via Sestriere 100, 10060 None (TO), Italy, and under applicable patents of other parties.

12.5 Trademarks

Notice: All referenced brands, prod uct names, service names and trademarks are the property of their respective owners.

13. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Product data sheet Rev. 5 — 21 January 2011 16 of 17

Page 17

NXP Semiconductors

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6.1 Ruggedness in class-AB operation . . . . . . . . . 4

7 Application information. . . . . . . . . . . . . . . . . . . 5

7.1 Narrowband RF figures . . . . . . . . . . . . . . . . . . 5

7.1.1 2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

7.1.2 DVB-T. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

7.2 Broadband RF figures . . . . . . . . . . . . . . . . . . . 6

7.2.1 2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

7.2.2 DVB-T. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

7.3 Impedance information . . . . . . . . . . . . . . . . . . . 7

7.4 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 14

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 15

12.4 Licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

12.5 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16

13 Contact information. . . . . . . . . . . . . . . . . . . . . 16

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

BLF888

UHF power LDMOS transistor

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Date of release: 21 January 2011

Document identifier: BLF888