Philips blf872_1 Datasheet

BLF872

UHF power LDMOS transistor

Rev. 01 — 20 February 2006 Product data sheet

1. Product proﬁle

1.1 General description

A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 250 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

1.2 Features

■ Typical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a

quiescent drain current IDq = 2 × 0.9 A:

◆ Peak envelope power load power P

◆ Gain Gp=15dB

◆ Drain efﬁciency ηD=43%

◆ Third order intermodulation distortion IMD3 = −28 dBc

■ Typical DVB performance at 858 MHz, a drain-source voltage VDS of 32 V and a

quiescent drain current IDq = 2 × 0.9 A:

◆ Average output power P

◆ Gain Gp=15dB

◆ Drain efﬁciency ηD=30%

◆ Third order intermodulation distortion IMD3 = −28 dBc (4.3 MHz from center

frequency)

■ Advanced ﬂange material for optimum thermal behavior and reliability

■ Excellent ruggedness

■ High power gain

■ Designed for broadband operation (UHF band)

■ Excellent reliability

■ Internal input and output matching for high gain and optimum broadband operation

■ Source on underside eliminates DC isolators, reducing common-mode inductance

■ Easy power control

L(AV)

=70W

L(PEP)

= 300 W

Philips Semiconductors

1.3 Applications

■ Communication transmitter applications in the UHF band

■ Industrial applications in the UHF band

1.4 Quick reference data

Table 1: Quick reference data

Typical RF performance at VDS = 32 V and Th=25°C in a common-source narrowband 860 MHz test circuit.

Mode of operation f

CW, class AB 860 300 - - 14 55 2-tone, class AB f

PAL BG 860 (ch69) 300 (peak sync.) DVB-T (8K OFDM) 858 - - 70 15 30 −28

[1] Th is the heatsink temperature. [2] Black video signal, sync expansion: input sync = 33 %; output sync ≥ 27 %. [3] Measured dBc at 4.3 MHz from center frequency.

BLF872

UHF power LDMOS transistor

[1]

(MHz)

= 860;

1

f

= 860.1

2

P

L

(W)

- 300 - 15 42 −28

P (W)

[2]

- - 15 42 -

L(PEP)

P

L(AV)

(W)

G

p

(dB)

η

D

(%)

IMD3 (dBc)

[3]

2. Pinning information

Table 2: Pinning

Description Pin Simpliﬁed outline

drain 1 1 drain 2 2 gate 1 3 gate 2 4 source 5

[1] Connected to ﬂange.

3. Ordering information

Table 3: Ordering information

Type number Package

BLF872 - ﬂangedLDMOST ceramic package; 2 mounting holes; 4

12

5

[1]

43

Name Description Version

SOT800-1

leads

Product data sheet Rev. 01 — 20 February 2006 2 of 16

Philips Semiconductors

BLF872

UHF power LDMOS transistor

4. Limiting values

Table 4: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

GS

T

stg

T

j

drain-source voltage - 65 V gate-source voltage - ±13 V storage temperature −65 +150 °C junction temperature - 200 °C

5. Thermal characteristics

Table 5: Thermal characteristics

Symbol Parameter Conditions Typ Unit

R R

th(j-c) th(j-h)

thermal resistance from junction to case Th=25°C thermal resistance from junction to heatsink Th=25°C

[1]

0.32 K/W

[1] [2]

0.4 K/W

[1] Th is the heatsink temperature. [2] R

is dependent on the applied thermal compound and clamping/mounting of the device.

th(j-h)

6. Characteristics

Table 6: Characteristics

Tj=25°C unless otherwise speciﬁed.

Symbol Parameter Conditions

V

(BR)DSS

V

GSth

I

DSS

I

DSX

I

GSS

g

fs

R

DSon

C

iss

C

oss

C

rss

[1] ID is the drain current. [2] Capacitance values without internal matching.

drain-source breakdown voltage VGS=0V; ID=5mA 65 - - V gate-source threshold voltage VDS= 20 V; ID= 250 mA 5.2 - 6.2 V drain leakage current VGS=0V; VDS=32V - - 2.2 µA drain cut-off current VGS=V

GSth

gate leakage current VGS=10V; VDS=0V - - 40 nA forward transconductance VGS=20V; ID=16A - 10 - S drain-source on-state resistance VGS=V

GSth

input capacitance VGS= 0 V; VDS=32V; f=1MHz output capacitance VGS= 0 V; VDS=32V; f=1MHz reverse transfer capacitance VGS= 0 V; VDS=32V; f=1MHz

[1]

Min Typ Max Unit

+ 6 V; VDS=10V - 41 - A

+ 6 V; ID=9A - 80 - mΩ

[2]

- 200 - pF

[2]

-70-pF

[2]

- 2.5 - pF

Product data sheet Rev. 01 — 20 February 2006 3 of 16

Philips Semiconductors

BLF872

UHF power LDMOS transistor

200

C

oss

(pF)

150

100

50

0

0504020 3010

VGS = 0 V; f = 1 MHz.

Fig 1. Output capacitance C

as a function of drain-source voltage VDS; typical values

oss

001aad743

VDS (V)

per section; capacitance value without internal matching

7. Application information

Table 7: RF performance in a common-source 860 MHz narrowband test circuit

Th=25°C unless otherwise speciﬁed.

Mode of operation f V

(MHz) (V) (A) (W) (W) (dB) (%) (dBc) (dB)

2-tone, class AB f

= 860;

1

f

= 860.1

2

DVB-T (8K OFDM) 858 32 2 × 0.9 - 70 > 14 > 26 ≤−25 -

[1]

DS

I

Dq

P

L(PEP)

P

L(AV)

G

p

η

D

IMD3 ∆G

32 2 × 0.9 300 - > 14 > 40 ≤−25 ≤ 1

p

[1] Sync. compression: input sync. ≥ 33 %, output sync. 27 %.

Product data sheet Rev. 01 — 20 February 2006 4 of 16

Philips Semiconductors

BLF872

UHF power LDMOS transistor

16

G

p

(dB)

14

12

10

0 400300100 200

G

p

η

D

η

add

001aad744

PL (W)

VDS = 32 V; f = 860 MHz; IDq = 2 × 0.9 A; Th = 25 °C.

Fig 2. CW power gain Gp, drain efﬁciency ηD and power added efﬁciency η

typical values

001aad745

0

−20

IMD

(dBc)

G

(dB)

16

p

14

G

(dB)

16

p

14

G

IMD3

p

60

η

, η

D

add

(%)

40

20

0

as a function of output power PL;

add

001aad746

G

p

η

D

η

add

60

η

, η

D

add

(%)

40

12

10

0 250200100 15050

IMD5

P

L(AV)

VDS = 32 V; f1 = 860 MHz; f2 = 860.1 MHz; IDq=2× 0.9 A; Th = 25 °C.

Fig 3. 2-tone power gain Gp and intermodulation

distortion IMD as a function of average output power P

; typical values

L(AV)

(W)

−40

−60

12

10

0 250200100 15050

VDS = 32 V; f1 = 860 MHz; f2 = 860.1 MHz; IDq=2× 0.9 A; Th = 25 °C.

Fig 4. 2-tone power gain G

power added efﬁciency η average output power P

20

0

P

(W)

L(AV)

, drain efﬁciency ηD and

p

as a function of

add

; typical values

L(AV)

Product data sheet Rev. 01 — 20 February 2006 5 of 16

Philips Semiconductors

BLF872

UHF power LDMOS transistor

20

G

p

(dB)

16

12

8

4

0

0 16012040 80

G

IMD3

001aad748

p

HI

LO

P

L(AV)

0

−10

−20

−30

−40

−50

(W)

IMD at ±4.3 MHz from frequency center. VDS= 32 V; f = 858 MHz; IDq=2× 0.9 A; Th=25°C.

Fig 5. DVB-T (8K OFDM) power gain Gp and third

order intermodulation distortion (high-frequency component IMD3 low-frequency component IMD3 function of average output power P

LO

and

HI

) as a

L(AV)

; typical

values

IMD

(dBc)

20

G

p

(dB)

16

12

8

4

0

0 16012040 80

G

p

η

add

η

D

Fig 6. DVB-T (8K OFDM) power gain G

efﬁciency η

and power added efﬁciency η

D

as a function of average output power P typical values

001aad747

P

L(AV)

, drain

p

(W)

50

, η

η

D

(%)

40

30

20

10

0

L(AV)

add

;

Product data sheet Rev. 01 — 20 February 2006 6 of 16

Philips Semiconductors

7.1 Broadband operation data

Measured in a common-source broadband (470 MHz to 860 MHz) test circuit.

BLF872

UHF power LDMOS transistor

300

P

(W)

200

100

0

400 900800600 700500

P

o(sync)M

P

L(AV)

001aad749

f (MHz)

VDS = 32 V; IDq = 2 × 0.9 A; Th = 25 °C. Black video signal, sync expansion:

input sync = 33 %; output sync ≥ 27 %.

Fig 7. Analog TV (black video signal) peak sync

output power P power P

as a function of frequency f

L(AV)

and average output

o(sync)M

20

G

p

(dB)

15

10

5

0

400 900800600 700500

001aad750

G

p

η

D

f (MHz)

80

η

D

(%)

60

40

20

0

VDS = 32 V; IDq = 2 × 0.9 A; Th = 25 °C. Black video signal, sync expansion:

input sync = 33 %; output sync ≥ 27 %.

Fig 8. Analog TV (black video signal) power gain G

and drain efﬁciency ηD as a function of frequency f

p

7.2 Ruggedness in class-AB operation

The BLF872 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS= 32 V; f = 860 MHz at rated power.

Measured in a common-source broadband (470 MHz to 860 MHz) test circuit.

Product data sheet Rev. 01 — 20 February 2006 7 of 16

Philips Semiconductors

7.3 Reliability

BLF872

UHF power LDMOS transistor

7

10

Years

6

10

5

10

4

10

3

10

2

10

0 20168124

TTF; 0.1 % failure fraction; best estimate values. (1) Tj = 100 °C (2) Tj = 110 °C (3) Tj = 120 °C (4) Tj = 130 °C (5) Tj = 140 °C (6) Tj = 150 °C (7) Tj = 160 °C (8) Tj = 170 °C (9) Tj = 180 °C

(10) Tj = 190 °C (11) Tj = 200 °C

(11)(10)(9)(8)(7)

Fig 9. BLF872 electromigration (ID, total device)

001aad751

(6)(5)(4)(3)(2)(1)

ID (A)

8. Test information

Table 8: List of components

For test circuit, see Figure 10, 11 and 12.

Component Description Value Remarks

B1, B2 balun semi rigid coax 25 Ω EZ90-25-TP C1 multilayer ceramic chip capacitor 12 pF C2 multilayer ceramic chip capacitor 10 pF C3, C5 multilayer ceramic chip capacitor 5.6 pF C4 multilayer ceramic chip capacitor 6.8 pF C6, C7 multilayer ceramic chip capacitor 2.0 pF C8 multilayer ceramic chip capacitor 18 pF C9, C10 multilayer ceramic chip capacitor 0.5 pF C11, C12 multilayer ceramic chip capacitor 100 pF C13, C14 multilayer ceramic chip capacitor 100 pF

Product data sheet Rev. 01 — 20 February 2006 8 of 16

[1] [1] [1] [1] [2] [1] [2] [1] [2]

Philips Semiconductors

BLF872

UHF power LDMOS transistor

Table 8: List of components

…continued

For test circuit, see Figure 10, 11 and 12.

Component Description Value Remarks

C15, C16 ceramic capacitor 15 nF C17, C18 electrolytic capacitor 470 µF C20 multilayer ceramic chip capacitor 13 pF

[3]

C21 tekelec trimmer 0.6 pF to 4.5 pF C22 multilayer ceramic chip capacitor 3.9 pF C23 multilayer ceramic chip capacitor 10 pF C24, C32 multilayer ceramic chip capacitor 3.0 pF C25 multilayer ceramic chip capacitor 30 pF C26, C27 multilayer ceramic chip capacitor 100 pF

[3] [3] [3] [3] [3]

C28, C29 ceramic capacitor 15 nF C30, C31 electrolytic capacitor 10 µF

[4]

L1 stripline L2 stripline L3 stripline L4 stripline L5 stripline L6 stripline L10 stripline L11 stripline L12 stripline L13 stripline

(W × L) 24 mm × 13.1 mm

[4]

(W × L) 10 mm × 17.7 mm

[4]

(W × L) 5 mm × 16.5 mm

[4]

(W × L) 2.4 mm × 15 mm

[4]

(W × L) 3.5 mm × 43 mm

[4]

(W × L) 2 mm × 43.3 mm

[4]

(W × L) 24 mm × 10 mm

[4]

(W × L) 10 mm × 15 mm

[4]

(W × L) 3 mm × 31.5 mm

[4]

(W × L) 2 mm × 43.3 mm R1 resistor 5.6 Ω R2 resistor 5.6 Ω R3 resistor 100 Ω R4 resistor 100 Ω R5 potentiometer 2 kΩ R6 potentiometer 2 kΩ

[1] American technical ceramics type 180R or capacitor of same quality. [2] American technical ceramics type 100B or capacitor of same quality. [3] American technical ceramics type 100A or capacitor of same quality. [4] PCB: Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 µm.

Product data sheet Rev. 01 — 20 February 2006 9 of 16

Product data sheet Rev. 01 — 20 February 2006 10 of 16

xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx

+V

G1(test)

C30

L5

C9

Philips Semiconductors

C28

50 Ω

C29

C31

+V

R5

R3

R1

C25

R2

R4

R6

G2(test)

C26

C27

L13

L10

L11

C24

L12

C23

B2

L12

C32

C22

L11

C20C21

L10

L1

L2

C1

C2 C3 C4 C5

L2

L1

L5

C10

C13 C15 C17

+V

D1(test)

L3

C6

C7

L6

B1

L6

C11

C12

50 Ω

L4

C8

+V

D2(test)

C16 C18C14

UHF power LDMOS transistor

001aad752

BLF872

Fig 10. Class-AB common-source broadband test circuit; V

D1(test)

, V

D2(test)

, V

G1(test)

and V

are drain and gate test voltages

G2(test)

Product data sheet Rev. 01 — 20 February 2006 11 of 16

xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx

80 mm

Philips Semiconductors

95 mm

Fig 11. Printed-circuit board for class-AB broadband test circuit

95 mm

001aad753

UHF power LDMOS transistor

BLF872

Product data sheet Rev. 01 — 20 February 2006 12 of 16

xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx

Philips Semiconductors

C28

C29

C25

C26

C27

+ +

32 mm

C30

R3

R1

R2

L13

C24 C32

L13

R4

C31

+V

R5

B2

broadband

BLF872 input

R6

+V

G1(test)

L12

G2(test)

10 mm

+V

C6 C7

C14

C13

C11

C12

C15

C16

+V

D1(test)

D2(test)

strip (+32 V supply)

L4

B1

C17

+

C8

C18

+

001aad833

UHF power LDMOS transistor

L5

15 mm

13.1 mm

L10

L11

C21

C20

BLF872

L10

C22C23

L11

15 mm

L1

C1

C2

1.5 mm

L1

L5

C9

L6

L2

L3

C5C4C3

L3

L2

3.5 mm

L6

C10

32 mm

Fig 12. Component layout for class-AB broadband test circuit

BLF872

Philips Semiconductors

9. Package outline

BLF872

UHF power LDMOS transistor

Flanged LDMOST ceramic package; 2 mounting holes; 4 leads

D

A

y

D

1

U

1

q

12

HLU

2

SOT800-1

F

B

c

E

P

C

w1 A

M MBM

E

1

5

34

A

e

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

30.5

29.9

1.201

1.177

D

31.1

30.9

1.224

1.216

1

UNIT A Dbc

10.55

10.45

0.415

0.411

0.15

0.10

0.006

0.004

IEC JEDEC JEITA

6.6

mm 0.050.25 0.2538.512.7

6.2

0.260

inches 0.0020.01 0.011.516

0.244

OUTLINE VERSION

SOT800-1

14.6

14.4

0.575

0.567

E

e

1

15.3

15.1

0.602

0.5

0.594

REFERENCES

b

0 5 10 mm

scale

F

HL

22.8

2.26

21.8

2.00

0.898

0.089

0.079

0.858

0.146

0.130

3.7

3.3

M M

w2 C

pQE

3.56

3.49

0.140

0.137

3.4

3.1

0.134

0.122

U

1

44.5

44.2

0.606

1.752

0.591

1.740

EUROPEAN

PROJECTION

U

15.4

15.0

2

Q

w

2

1

ISSUE DATE

05-06-02 05-06-07

yq

Fig 13. Package outline SOT800-1

Product data sheet Rev. 01 — 20 February 2006 13 of 16

Philips Semiconductors

10. Abbreviations

Table 9: Abbreviations

Acronym Description

CDMA Code Division Multiple Access CW Continuous Wave DVB Digital Video Broadcast EDGE Enhanced Data rates for GSM Evolution ESR Equivalent Series Resistance EVM Error Vector Magnitude GSM Global System for Mobile communications IMD InterModulation Distortion LDMOS Laterally Diffused Metal Oxide Semiconductor OFDM Orthogonal Frequency Division Multiplexing PCB Printed-Circuit Board PEP Peak Envelope Power RF Radio Frequency SMD Surface Mount Device TTF Time To Failure VSWR Voltage Standing Wave Ratio

BLF872

UHF power LDMOS transistor

11. Revision history

Table 10: Revision history

Document ID Release date Data sheet status Change notice Doc. number Supersedes

BLF872_1 20060220 Product data sheet - - -

Product data sheet Rev. 01 — 20 February 2006 14 of 16

Philips Semiconductors

12. Data sheet status

BLF872

UHF power LDMOS transistor

Level Data sheet status

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

II Preliminary data Qualiﬁcation This data sheet contains datafrom the preliminary speciﬁcation. Supplementary data will be published

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

13. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation.

[2] [3]

Deﬁnition

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice,in order to improve the design and supply the best possible product.

right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representationsor warranties thatthese products are free from patent, copyright, or mask work right infringement, unless otherwise speciﬁed.

15. Trademarks

14. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors

Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners.

16. Contact information

For additional information, please visit: http://www.semiconductors.philips.com For sales ofﬁce addresses, send an email to: [email protected]

Product data sheet Rev. 01 — 20 February 2006 15 of 16

Philips Semiconductors

17. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Application information. . . . . . . . . . . . . . . . . . . 4

7.1 Broadband operation data . . . . . . . . . . . . . . . . 7

7.2 Ruggedness in class-AB operation. . . . . . . . . . 7

7.3 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 14

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14

12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 15

13 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

14 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

16 Contact information . . . . . . . . . . . . . . . . . . . . 15

BLF872

UHF power LDMOS transistor

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Published in The Netherlands

Date of release: 20 February 2006

Document number: BLF872_1