Philips blf871_blf871s Datasheet

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Page 1

BLF871; BLF871S

UHF power LDMOS transistor

Rev. 04 — 19 November 2009 Product data sheet

1. Product profile

1.1 General description

A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.

Table 1. Typical performance

RF performance at VDS = 40 V in a common-source 860 MHz test circuit.

Mode of operation f PLP

CW, class AB 860 100 - - 21 60 - 2-tone, class AB f1 = 860; f2 = 860.1 - 100 - 21 47 −35 DVB-T (8k OFDM) 858 - - 24 22 33 −34

to 1 GHz. The

L(PEP)PL(AV)Gp

(MHz) (W) (W) (W) (dB) (%) (dBc) (dB)

IMD3 PAR

[1]

8.3

[2]

CAUTION

[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency. [2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on

CCDF.

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

1.2 Features

 2-tone performance at 860 MHz, a drain-source voltage VDS of 40 V and a quiescent

drain current I

 Peak envelope power load power = 100 W  Power gain = 21 dB  Drain efficiency = 47 %  Third order intermodulation distortion = −35 dBc

 DVB performance at 858 MHz, a drain-source voltage VDS of 40 V and a quiescent

drain current I

 Average output power = 24 W  Power gain = 22 dB  Drain efficiency = 33 %  Third order intermodulation distortion = −34 dBc (4.3 MHz from center frequency)

= 0.5 A:

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NXP Semiconductors

 Integrated ESD protection  Excellent ruggedness  High power gain  High efficiency  Excellent reliability  Easy power control  Compliant to Directive 2002/95/EC, regarding Restriction of Hazard ou s Subs tances

(RoHS)

1.3 Applications

 Communication transmitter applications in the UHF band  Industrial applications in the UHF band

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

BLF871 (SOT467C)

1 drain 2 gate 3 source

BLF871; BLF871S

UHF power LDMOS transistor

[1]

sym11

BLF871S (SOT467B)

1 drain 2 gate 3 source

[1] Connected to flange.

3. Ordering information

Table 3. Ordering information

Type number Package

BLF871 - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C BLF871S - earless LDMOST ceramic package; 2 leads SOT467B

[1]

sym11

Name Description Version

Product data sheet Rev. 04 — 19 November 2009 2 of 19

Page 3

NXP Semiconductors

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

stg

drain-source voltage - 89 V gate-source voltage −0.5 +13 V storage temperature −65 +150 °C junction temperature - 200 °C

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Unit

th(j-c)

[1] R

thermal resistance from junction to case T

is measured under RF conditions.

th(j-c)

BLF871; BLF871S

UHF power LDMOS transistor

[1]

0.95 K/W

case L(AV)

= 80 °C;

= 50 W

6. Characteristics

Table 6. Characteristics

Tj = 25 °C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

(BR)DSS

GS(th)

DSS

DSX

GSS

DS(on)

iss

oss

rss

[1] ID is the drain current.

drain-source breakdown voltage VGS = 0 V; ID = 1.12 mA gate-source threshold voltage VDS = 10 V; ID = 112 mA

[1]

89 - 105.5 V

[1]

1.4 - 2.4 V drain leakage current VGS = 0 V; VDS = 40 V - - 1.4 μA drain cut-off current VGS = V

GS(th)

+ 3.75 V;

16.7 20 - A

VDS = 10 V gate leakage current VGS = 10 V; VDS = 0 V - - 140 nA drain-source on-state resistance VGS = V

GS(th)

+ 3.75 V;

[1]

- 210 - mΩ

ID = 3.7 A input capacitance VGS = 0 V; VDS = 40 V;

= 1 MHz

f output capacitance VGS = 0 V; VDS = 40 V;

= 1 MHz

reverse transfer capacitance VGS = 0 V; VDS = 40 V;

= 1 MHz

- 95 - pF

- 30 - pF

- 1 - pF

Product data sheet Rev. 04 — 19 November 2009 3 of 19

Page 4

NXP Semiconductors

BLF871; BLF871S

UHF power LDMOS transistor

VGS = 0 V; f = 1 MHz.

Fig 1. Output capacitanc e as a function of drain-source voltage; typical values

7. Application information

Table 7. RF performance in a common-source narrowband 860 MHz test circuit

Th = 25 °C unless otherwise specified.

Mode of operation f VDSIDqP

2-tone, class AB f1 = 860;

DVB-T (8k OFDM) 858 40 0.5 - 24 > 19 > 30 < −31

160

oss

(pF)

120

0604020

L(PEP)PL(AV)Gp

001aaj276

VDS (V)

IMD3 PAR

(MHz) (V) (A) (W) (W) (dB) (%) (dBc) (dB)

40 0.5 100 - > 19 > 44 < −30 -

= 860.1

[1]

> 7.8

[2]

[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency. [2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on

CCDF.

Product data sheet Rev. 04 — 19 November 2009 4 of 19

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NXP Semiconductors

001aaj278

001aaj279

7.1 Narrowband RF figures

7.1.1 CW

BLF871; BLF871S

UHF power LDMOS transistor

(dB)

0 18012060

001aaj277

PL (W)

(%)

VDS = 40 V; IDq = 0.5 A; measured in a common source narrowband 860 MHz test circuit.

Fig 2. CW power gain and drain efficien cy as a function of load power; typical values

7.1.2 2-Tone

(%)

IMD3 (dBc)

−20

0 1208040

VDS = 40 V; IDq = 0.5 A; measured in a common source narrowband 860

MHz test circuit.

L(AV)

(W)

−40

−60 0 1208040

(1) (2)

(W)

L(AV)

VDS = 40 V; IDq = 0.5 A; measured in a common source narrowband 860

MHz test circuit. (1) Low frequency component (2) High frequency component

Fig 3. 2-Tone power gain and drain efficiency as

functions of average load power; typical values

Fig 4. 2-Tone third order intermodulation distortion

as a function of average load power; typical values

Product data sheet Rev. 04 — 19 November 2009 5 of 19

Page 6

NXP Semiconductors

7.1.3 DVB-T

BLF871; BLF871S

UHF power LDMOS transistor

L(AV)

001aaj280

(W)

(dB)

0604020

VDS = 40 V; IDq = 0.5 A; measured in a common source narrowband 860

MHz test circuit.

Fig 5. DVB-T power gain and drain efficiency as

functions of average load power; typical values

(%)

L(AV)

001aaj281

(W)

−15

IMD3 (dBc)

−25

−35

−45

−55

0604020

(1)

(2)

VDS = 40 V; IDq = 0.5 A; measured in a common source narrowband 860

MHz test circuit. (1) Low frequency component (2) High frequency component

Fig 6. DVB-T third order intermodulation distortion

as a function of average load power; typical values

Product data sheet Rev. 04 — 19 November 2009 6 of 19

Page 7

NXP Semiconductors

7.2 Broadband RF figures

7.2.1 2-Tone

BLF871; BLF871S

UHF power LDMOS transistor

(dB)

400 900800600 700500

(2) (1)

(2)

(1)

001aaj282

f (MHz)

(dB)

IDq = 0.5 A; measured in a common source broadband

test circuit as described in (1) VDS = 40 V; P (2) VDS = 42 V; P

L(AV) L(AV)

= 45 W = 50 W

Section 8.

Fig 7. 2-Tone power gain and drain efficiency as a

function of frequency; typical values

IMD3 (dBc)

−20

−40

−60

(2) (1)

400 900800600 700500

001aaj283

f (MHz)

IDq = 0.5 A; measured in a common source broadband

test circuit as described in (1) VDS = 40 V; P (2) VDS = 42 V; P

L(AV) L(AV)

= 45 W = 50 W

Section 8.

Fig 8. 2-Tone third order intermodulation distortion

as a function of frequency; typical values

Product data sheet Rev. 04 — 19 November 2009 7 of 19

Page 8

NXP Semiconductors

7.2.2 DVB-T

BLF871; BLF871S

UHF power LDMOS transistor

(dB)

400 900800600 700500

(2) (1)

(1)

(2)

001aaj284

f (MHz)

IDq = 0.5 A; measured in a common source broadband

test circuit as described in (1) VDS = 40 V; P (2) VDS = 42 V; P

L(AV) L(AV)

= 22 W = 24 W

Section 8.

Fig 9. DVB-T power gain and drain efficiency as

functions of frequency; typical values

PA R

(dB)

(%)

IMD3 (dBc)

−20

−40

−60

(2) (1)

400 900800600 700500

001aaj285

f (MHz)

IDq = 0.5 A; measured in a common source broadband

test circuit as described in (1) VDS = 40 V; P (2) VDS = 42 V; P

L(AV) L(AV)

= 22 W = 24 W

Section 8.

Fig 10. DVB-T third order intermodulation distortion

as a function of frequency; typical values

001aaj286

(1) (2)

400 900800600 700500

(3) (4)

f (MHz)

IDq = 0.5 A; measured in a common source broadband test circuit as described in Section 8.

PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. (1) PAR at 0.01 % probability on the CCDF; VDS = 40 V; P (2) PAR at 0.01 % probability on the CCDF; VDS = 42 V; P (3) PAR at 0.1 % probability on the CCDF; VDS = 40 V; P (4) PAR at 0.1 % probability on the CCDF; VDS = 42 V; P

L(AV)

L(AV) L(AV) L(AV)

= 22 W

= 24 W = 22 W = 24 W

Fig 11. DVB-T PAR at 0.1 % and at 0.01 % probability on the CCDF as function of frequency; typical values

Product data sheet Rev. 04 — 19 November 2009 8 of 19

Page 9

NXP Semiconductors

7.3 Ruggedness in class-AB operation

The BLF871 and BLF871S are capable o f withsta nding a load mismatch corresponding to VSWR f

= 860 MHz at rated power.

7.4 Impedance information

Fig 12. Definition of transistor impedanc e

Table 8. Typical impedance

Simulated Zi and ZL device impedance; impedance info at VDS = 42 V.

f Z (MHz) (Ω) (Ω)

300 0.977 − j3.327 5.506 + j1.774 325 0.977 − j2.983 5.366 + j1.858 350 0.978 − j2.681 5.223 + j1.930 375 0.979 − j2.414 5.078 + j1.990 400 0.979 − j2.174 4.932 + j2.040 425 0.980 − j1.956 4.786 + j2.079 450 0.981 − j1.758 4.640 + j2.108 475 0.982 − j1.576 4.495 + j2.128 500 0.982 − j1.407 4.352 + j2.138 525 0.983 − j1.250 4.212 + j2.140 550 0.984 − j1.103 4.074 + j2.135 575 0.985 − j0.964 3.940 + j2.122 600 0.986 − j0.834 3.809 + j2.102 625 0.987 − j0.709 3.682 + j2.077 650 0.988 − j0.591 3.558 + j2.045 675 0.990 − j0.478 3.438 + j2.009 700 0.991 − j0.370 3.323 + j1.968 725 0.992 − j0.266 3.211 + j1.923 750 0.993 − j0.165 3.103 + j1.874 775 0.995 − j0.068 3.000 + j1.822 800 0.996 + j0.026 2.900 + j1.766 825 0.997 + j0.117 2.804 + j1.708 850 0.999 + j0.206 2.711 + j1.648 875 1.000 + j0.292 2.623 + j1.586 900 1.002 + j0.376 2.538 + j1.521

BLF871; BLF871S

UHF power LDMOS transistor

= 10 : 1 through all phases under the following conditions: VDS = 42 V;

drain

gate

001aai08

Product data sheet Rev. 04 — 19 November 2009 9 of 19

Page 10

NXP Semiconductors

Table 8. Typical impedance …continued

Simulated Zi and ZL device impedance; impedance info at VDS = 42 V.

f Z (MHz) (Ω) (Ω)

925 1.004 + j0.459 2.456 + j2.455 950 1.005 + j0.540 2.378 + j2.388 975 1.007 + j0.619 2.303 + j2.320 1000 1.009 + j0.696 2.230 + j2.250

7.5 Reliability

BLF871; BLF871S

UHF power LDMOS transistor

Years

(7) (8) (9) (10) (11)

0 642

TTF (0.1 % failure fraction).

The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) × 1 / δ. (1) Tj = 100 °C (2) Tj = 110 °C (3) Tj = 120 °C (4) Tj = 130 °C (5) Tj = 140 °C (6) Tj = 150 °C (7) Tj = 160 °C (8) Tj = 170 °C (9) Tj = 180 °C

(10) Tj = 190 °C

(11) Tj = 200 °C

Fig 13. Electromigration (I

DS(DC)

(1) (2) (3) (4) (5) (6)

)

DS(DC)

001aaj287

(A)

Product data sheet Rev. 04 — 19 November 2009 10 of 19

Page 11

NXP Semiconductors

8. Test information

BLF871; BLF871S

UHF power LDMOS transistor

Table 9. List of components

For test circuit, see Figure 14, Figure 15 and Figure 16.

Component Description Value Remarks

C1, C2 multilayer ceramic chip capacitor 5.1 pF C3, C4 multilayer ceramic chip capacitor 10 pF C5 multilayer ceramic chip capacitor 6.8 pF C6 multilayer ceramic chip capacitor 4.7 pF C7 multilayer ceramic chip capacitor 2.7 pF C8, C9, C10, C25,

multilayer ceramic chip capacitor 100 pF

[1] [2] [1] [1] [1] [1]

C26 C11, C27 multilayer ceramic chip capacitor 10 μF TDK C570X7R1H106KT000N or

capacitor of same quality. C12 electrolytic capacitor 470 μF; 63 V C20 multilayer ceramic chip capacitor 10 pF C21 multilayer ceramic chip capacitor 8.2 pF

[3] [3]

C22 trimmer 0.6 pF to 4.5 pF Tekelec C23 multilayer ceramic chip capacitor 6.8 pF C24 multilayer ceramic chip capacitor 3.9 pF L1 stripline L2 stripline L3 stripline L4 stripline L5 stripline L6 stripline L7 stripline L20 stripline L21 stripline L22 stripline L23 stripline -

[3] [3] [4]

(W × L) 7 mm × 15 mm

[4]

(W × L) 2.4 mm × 9 mm

[4]

(W × L) 2.4 mm × 10 mm

[4]

(W × L) 2.4 mm × 25 mm

[4]

(W × L) 2.4 mm × 10 mm

[4]

(W × L) 2.0 mm × 20 mm

[4]

(W × L) 2.0 mm × 21 mm

[4]

(W × L) 7 mm × 12 mm

[4]

(W × L) 2.4 mm × 13 mm

[4]

(W × L) 2.4 mm × 31 mm

[4]

(W × L) 2.4 mm × 5 mm R1 resistor 100 Ω R2 resistor 10 kΩ

[1] American technical ceramics type 100B or capacitor of same quality. [2] American technical ceramics type 180R or capacitor of same quality. [3] American technical ceramics type 100A or capacitor of same quality. [4] Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization);

thickness

Product data sheet Rev. 04 — 19 November 2009 11 of 19

copper plating = 35 μm.

Page 12

Product data sheet Rev. 04 — 19 November 2009 12 of 19

xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx

xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx

C27

C11 C12

NXP Semiconductors

C26

C20

L23

C25 C8

50 Ω 50 Ω

C23 C22C24 C21

L20 L1 L2 L3 L4 L5L21L22

C10

C5 C6 C7

001aaj28

BLF871; BLF871S

UHF power LDMOS transistor

See Table 9 for a list of components.

Fig 14. Class-AB common-source broadband amplifier

Page 13

NXP Semiconductors

BLF871; BLF871S

UHF power LDMOS transistor

76.2 mm

40 mm 40 mm

001aaj289

Fig 15. Printed-Circuit Board (PCB) for class-AB common source amplifier

Product data sheet Rev. 04 — 19 November 2009 13 of 19

Page 14

NXP Semiconductors

BLF871; BLF871S

UHF power LDMOS transistor

C25

L23

C24

L23

C26

L21

C23

C27

C20

C22

L20 L1 L2

C21

C10

C11

C12

001aaj29

See Table 9 for a list of components.

Fig 16. Component layout for class-AB common source amplifier

Product data sheet Rev. 04 — 19 November 2009 14 of 19

Page 15

NXP Semiconductors

9. Package outline

BLF871; BLF871S

UHF power LDMOS transistor

Flanged LDMOST ceramic package; 2 mounting holes; 2 leads

M M M

SOT467

5.97

5.72

0.235

0.225

EUROPEAN

PROJECTION

0.25

0.51

0.010 0.020

ISSUE DATE

99-12-06 99-12-28

M M

scale

18.54

17.02

0.73

0.67

3.43

3.18

0.135

0.125

0 5 10 mm

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

inch

OUTLINE

VERSION

SOT467C

4.67

3.94

0.184

0.155

5.59

5.33

0.220

0.210

0.15

0.10

0.006

0.004

IEC JEDEC EIAJ

9.25

9.04

0.364

0.356

9.27

9.02

0.365

0.355

5.92

5.77

0.233

0.227

1.65

5.97

1.40

5.72

0.065

0.235

0.055

0.225

REFERENCES

FH p q

UNIT

2.21

1.96

0.087

0.077

14.27

0.562

20.45

20.19

0.805

0.795

Fig 17. Package outline SOT467C

Product data sheet Rev. 04 — 19 November 2009 15 of 19

Page 16

NXP Semiconductors

BLF871; BLF871S

UHF power LDMOS transistor

arless LDMOST ceramic package; 2 leads SOT467

0 5 10 mm

Dimensions

(1)

max nom

min

max nom

min

4.67

3.94

0.184

0.155

5.59

5.33

0.22

0.21

DD1EE1F

9.25

9.27

9.02

0.365

0.355

5.92

5.77

0.233

0.227

0.235

0.225

0.15

9.04

0.10

0.006

0.364

0.004

0.356

IEC JEDEC JEITA

5.97

1.65

5.72

1.40

0.065

0.055

References

Unit

inches

Note

1. millimeter dimensions are derived from the original inch dimensions.

Outline version

SOT467B

scale

HL Q

18.29

2.92

2.21

17.27

2.16

1.96

0.115

0.085

0.087

0.077

0.72

0.68

U1U

9.78

9.53

0.385

0.375

5.97

5.72

0.235

0.225

0.25

0.01

sot467b_po

European projection

Issue date

08-12-09 09-10-27

Fig 18. Package outline SOT467B

Product data sheet Rev. 04 — 19 November 2009 16 of 19

Page 17

NXP Semiconductors

10. Abbreviations

Table 10. Abbreviations

Acronym Description

CW Continuous Wave CCDF Complementary Cumulative Distribution Function DVB Digital Video Broadcast DVB-T Digital Video Broadcast - Terrestrial ESD ElectroStatic Discharge HF High Frequency IMD3 Third order InterModulation Distortion LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor OFDM Orthogonal Frequency Divisi on Multiplexing PAR Peak-to-Average power Ratio PEP Peak Envelope Power RF Radio Frequency TTF Time To Failure UHF Ultra High Frequency VSWR Voltage Standing-Wave Ratio

BLF871; BLF871S

UHF power LDMOS transistor

11. Revision history

Table 11. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLF871_BLF871S_4 20091119 Product data sheet - BLF871_3 Modifications: • This document now describes both the BLF871 and the BLF871S. BLF871_3 20090921 Product data sheet - BLF871_2 BLF871_2 20090305 Preliminary data sheet - BLF871_1 BLF871_1 20081218 Objective data sheet - -

Product data sheet Rev. 04 — 19 November 2009 17 of 19

Page 18

NXP Semiconductors

BLF871; BLF871S

UHF power LDMOS transistor

12. Legal information

12.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this docu ment may have changed si nce this d ocument was pub lished and may dif fer in case of multiple devices. The latest product st atus

information is available on the Internet at URL http://www.nxp.com.

[1][2]

Product status

[3]

Definition

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied u pon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconduct ors does not give any repr esentatio ns or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell product s that is ope n for accept ance or the gr ant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

60134) may cause permanent

12.4 Trademarks

Notice: All referenced brands, prod uct names, service names and trad emarks are the property of their respective owners.

13. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Product data sheet Rev. 04 — 19 November 2009 18 of 19

Page 19

NXP Semiconductors

14. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Application information. . . . . . . . . . . . . . . . . . . 4

7.1 Narrowband RF figures . . . . . . . . . . . . . . . . . . 5

7.1.1 CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

7.1.2 2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

7.1.3 DVB-T. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

7.2 Broadband RF figures . . . . . . . . . . . . . . . . . . . 7

7.2.1 2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

7.2.2 DVB-T. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

7.3 Ruggedness in class-AB operation . . . . . . . . . 9

7.4 Impedance information. . . . . . . . . . . . . . . . . . . 9

7.5 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . 11

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 17

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 17

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 18

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 18

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18

13 Contact information. . . . . . . . . . . . . . . . . . . . . 18

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

BLF871; BLF871S

UHF power LDMOS transistor

Please be aware that important notices concerning this do cument and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Date of release: 19 November 2009

Document identifier: BLF871_BLF871S_4