Philips blf871 Datasheet

BLF871

UHF power LDMOS transistor

Rev. 01 — 18 December 2008 Objective data sheet

1. Product profile

1.1 General description

A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The
excellent ruggedness and broadband performance of this device makes it ideal for digital
transmitter applications.

Table 1. Typical performance

RF performance at VDS = 40 V in a common-source 860 MHz test circuit.

Mode of operation f PLP

CW, class AB 860 100 - - 21 60 - ­2-tone, class AB f
DVB-T (8k OFDM) 858 - - 24 22 33 −34

L(PEP)PL(AV)Gp

(MHz) (W) (W) (W) (dB) (%) (dBc) (dB)

= 860; f2= 860.1 - 100 - 21 48 −33 -

1

ηDIMD3 PAR

[1]

8.35

[2]

CAUTION

[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[2] PAR (of output signal) at 0.01 % probability on CCDF; PARof input signal = 9.5 dB at 0.01 % probability on

CCDF.

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.

1.2 Features

n 2-tone performance at 860 MHz, a drain-source voltage VDS of 40 V and a quiescent

drain current IDq= 0.5 A:

u Peak envelope power load power = 100 W
u Power gain = 21 dB
u Drain efficiency = 48 %
u Third order intermodulation distortion = −33 dBc

n DVB performance at 858 MHz, a drain-source voltage VDS of 40 V and a quiescent

drain current IDq= 0.5 A:

u Average output power = 24 W
u Power gain = 22 dB
u Drain efficiency = 33 %
u Third order intermodulation distortion = −34 dBc (4.3 MHz from center frequency)

NXP Semiconductors

n Integrated ESD protection
n Excellent ruggedness
n High power gain
n High efficiency
n Excellent reliability
n Easy power control
n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

n Communication transmitter applications in the UHF band
n Industrial applications in the UHF band

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 drain
2 gate
3 source

BLF871

UHF power LDMOS transistor

2

sym112

1

3

1

[1]

2

3

[1] Connected to flange.

3. Ordering information

Table 3. Ordering information

Type number Package

BLF871 - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

GS

T

stg

T

j

Name Description Version

drain-source voltage - 89 V
gate-source voltage −0.5 +13 V
storage temperature −65 +150 °C
junction temperature - 200 °C

BLF871_1 © NXP B.V. 2008. All rights reserved.

Objective data sheet Rev. 01 — 18 December 2008 2 of 18

NXP Semiconductors

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Unit

R

th(j-c)

[1] R

thermal resistance from junction to case T

is measured under RF conditions.

th(j-c)

6. Characteristics

Table 6. Characteristics

Tj=25°C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V

(BR)DSS

V

GS(th)

I

DSS

I

DSX

I

GSS

g

fs

R

DS(on)

C

iss

C

oss

C

rss

drain-source breakdown voltage VGS=0V; ID= 1.12 mA
gate-source threshold voltage VDS= 10 V; ID= 112 mA
drain leakage current VGS=0V; VDS=40V - - 1.2 µA
drain cut-off current VGS=V

gate leakage current VGS= 10 V; VDS= 0 V - - 100 nA
forward transconductance VGS= 10 V; ID= <tbd>
drain-source on-state resistance VGS=V

input capacitance VGS= 0 V; VDS=40V;

output capacitance VGS= 0 V; VDS=40V;

reverse transfer capacitance VGS= 0 V; VDS=40V;

DS

=8A

D

GSth

=10V

GSth

V

I

f=1MHz

f=1MHz

f=1MHz

BLF871

UHF power LDMOS transistor

case

P

L(AV)

+ 3.75 V;

+ 3.75 V;

=80°C;

=50W

[1]
[1]

[1]
[1]

[1]

89 - 105 V

1.3 - 2.2 V

-20- A

- <tbd> - S

- <tbd> - mΩ

-95- pF

-30- pF

-1 - pF

0.95 K/W

[1] ID is the drain current.

BLF871_1 © NXP B.V. 2008. All rights reserved.

Objective data sheet Rev. 01 — 18 December 2008 3 of 18

NXP Semiconductors

BLF871

UHF power LDMOS transistor

VGS = 0 V; f = 1 MHz.

Fig 1. Output capacitance as a function of drain-source voltage; typical values

7. Application information

Table 7. RF performance in a common-source narrowband 860 MHz test circuit

Th=25°C unless otherwise specified.

Mode of operation f VDSI

2-tone, class AB f
DVB-T (8k OFDM) 858 40 0.5 - 24 > 19 > 30 < −31

160

C

oss

(pF)

120

80

40

0

0604020

Dq

P

001aaj276

VDS (V)

L(PEP)PL(AV)GpηD

IMD3 PAR

(MHz) (V) (A) (W) (W) (dB) (%) (dBc) (dB)

= 860; f2= 860.1 40 0.5 50 - > 19 > 45 < −30 -

1

[1]

> 8

[2]

[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[2] PAR (of output signal) at 0.01 % probability on CCDF; PARof input signal = 9.5 dB at 0.01 % probability on

CCDF.

BLF871_1 © NXP B.V. 2008. All rights reserved.

Objective data sheet Rev. 01 — 18 December 2008 4 of 18

NXP Semiconductors

7.1 Narrowband RF figures

7.1.1 CW

BLF871

UHF power LDMOS transistor

G

(dB)

24

G

p

(dB)

22

20

18

16

0 18012060

G

p

η

D

001aaj277

PL (W)

80

η

D

(%)

60

40

20

0

VDS = 40V; IDq= 0.5 A; measured in a common source narrowband 860 MHz test circuit.

Fig 2. CW power gain and drain efficiency as a function of load power; typical values

7.1.2 2-Tone

25

p

23

G

p

001aaj278

80

η

D

(%)

60

0

IMD3
(dBc)

−20

001aaj279

η

21

19

17

0 1208040

VDS = 40V; IDq= 0.5 A; measured in a common source
narrowband 860 MHz test circuit.

D

P

L(AV)

(W)

40

−40

20

0

−60
0 1208040

(1)
(2)

P

(W)

L(AV)

VDS = 40V; IDq= 0.5 A; measured in a common source

narrowband 860 MHz test circuit.
(1) Low frequency component
(2) High frequency component

Fig 3. 2-Tone power gain and drain efficiency as

functions of average load power; typical
values

BLF871_1 © NXP B.V. 2008. All rights reserved.

Fig 4. 2-Tone third order intermodulation distortion

as a function of average load power; typical

values

Objective data sheet Rev. 01 — 18 December 2008 5 of 18

NXP Semiconductors

7.1.3 DVB-T

BLF871

UHF power LDMOS transistor

24

G

p

(dB)

22

20

18

0604020

001aaj280

G

p

η

D

P

L(AV)

60

40

20

0

(W)

VDS = 40V; IDq= 0.5 A; measured in a common source
narrowband 860 MHz test circuit.

Fig 5. DVB-T power gain and drain efficiency as

functions of average load power; typical
values

η

(%)

P

L(AV)

001aaj281

(W)

−15

D

IMD

(dBc)

−25

−35

−45

−55

0604020

(1)
(2)

VDS = 40V; IDq= 0.5 A; measured in a common source

narrowband 860 MHz test circuit.
(1) Low frequency component
(2) High frequency component

Fig 6. DVB-T third order intermodulation distortion

as a function of average load power; typical

values

BLF871_1 © NXP B.V. 2008. All rights reserved.

Objective data sheet Rev. 01 — 18 December 2008 6 of 18

NXP Semiconductors

7.2 Broadband RF figures

7.2.1 2-Tone

BLF871

UHF power LDMOS transistor

22

G

p

(dB)

20

18

16

14

400 900800600 700500

(2)
(1)

G

p

(2)

η

D

(1)

001aaj282

f (MHz)

70

η

(dB)

60

50

40

30

IDq= 0.5 A; measured in a common source broadband

test circuit as described in Section 8.
(1) VDS = 40 V; P
(2) VDS = 42 V; P

L(AV)
L(AV)

= 45 W
= 50 W

Fig 7. 2-Tone power gain and drain efficiency as a

function of frequency; typical values

0

D

IMD3
(dBc)

−20

−40

−60

(2)
(1)

400 900800600 700500

001aaj283

f (MHz)

IDq= 0.5 A; measured in a common source broadband

test circuit as described in Section 8.
(1) VDS = 40 V; P
(2) VDS = 42 V; P

L(AV)
L(AV)

= 45 W
= 50 W

Fig 8. 2-Tone third order intermodulation distortion

as a function of frequency; typical values

BLF871_1 © NXP B.V. 2008. All rights reserved.

Objective data sheet Rev. 01 — 18 December 2008 7 of 18

NXP Semiconductors

7.2.2 DVB-T

BLF871

UHF power LDMOS transistor

22

G

p

(dB)

20

18

16

400 900800600 700500

001aaj284

(2)
(1)

G

p

(1)

η

D

(2)

f (MHz)

50

40

30

20

IDq= 0.5 A; measured in a common source broadband

test circuit as described in Section 8.
(1) VDS = 40 V; P
(2) VDS = 42 V; P

L(AV)
L(AV)

= 22 W
= 24 W

Fig 9. DVB-T power gain and drain efficiency as

functions of frequency; typical values

9

PAR

(dB)

8

η

(%)

0

D

IMD3
(dBc)

−20

−40

−60

(2)
(1)

400 900800600 700500

001aaj285

f (MHz)

IDq= 0.5 A; measured in a common source broadband

test circuit as described in Section 8.
(1) VDS = 40 V; P
(2) VDS = 42 V; P

L(AV)
L(AV)

= 22 W
= 24 W

Fig 10. DVB-T third order intermodulation distortion

as a function of frequency; typical values

001aaj286

(1)
(2)

7

6

5

400 900800600 700500

(3)
(4)

f (MHz)

IDq= 0.5 A; measured in a common source broadband test circuit as described in Section 8.

PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.
(1) PAR at 0.01 % probability on the CCDF; VDS = 40 V; P
(2) PAR at 0.01 % probability on the CCDF; VDS = 42 V; P
(3) PAR at 0.1 % probability on the CCDF; VDS = 40 V; P
(4) PAR at 0.1 % probability on the CCDF; VDS = 42 V; P

L(AV)

L(AV)
L(AV)
L(AV)

= 22 W

= 24 W
= 22 W
= 24 W

Fig 11. DVB-T PAR at 0.1 % and at 0.01 % probability on the CCDF as function of frequency; typical values

BLF871_1 © NXP B.V. 2008. All rights reserved.

Objective data sheet Rev. 01 — 18 December 2008 8 of 18

NXP Semiconductors

7.3 Ruggedness in class-AB operation

The BLF871 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1
through all phases under the following conditions: VDS= 42 V; f = 860 MHz at rated
power.

7.4 Impedance information

Fig 12. Definition of transistor impedance

Table 8. Typical impedance

Simulated Zi and ZL device impedance; impedance info at VDS = 42 V.

f Z
MHz Ω Ω

300 0.977 − j3.327 5.506 + j1.774
325 0.977 − j2.983 5.366 + j1.858
350 0.978 − j2.681 5.223 + j1.930
375 0.979 − j2.414 5.078 + j1.990
400 0.979 − j2.174 4.932 + j2.040
425 0.980 − j1.956 4.786 + j2.079
450 0.981 − j1.758 4.640 + j2.108
475 0.982 − j1.576 4.495 + j2.128
500 0.982 − j1.407 4.352 + j2.138
525 0.983 − j1.250 4.212 + j2.140
550 0.984 − j1.103 4.074 + j2.135
575 0.985 − j0.964 3.940 + j2.122
600 0.986 − j0.834 3.809 + j2.102
625 0.987 − j0.709 3.682 + j2.077
650 0.988 − j0.591 3.558 + j2.045
675 0.990 − j0.478 3.438 + j2.009
700 0.991 − j0.370 3.323 + j1.968
725 0.992 − j0.266 3.211 + j1.923
750 0.993 − j0.165 3.103 + j1.874
775 0.995 − j0.068 3.000 + j1.822
800 0.996 + j0.026 2.900 + j1.766
825 0.997 + j0.117 2.804 + j1.708
850 0.999 + j0.206 2.711 + j1.648
875 1.000 + j0.292 2.623 + j1.586
900 1.002 + j0.376 2.538 + j1.521

BLF871

UHF power LDMOS transistor

Z

L

drain

gate

Z

i

001aai086

i

Z

L

BLF871_1 © NXP B.V. 2008. All rights reserved.

Objective data sheet Rev. 01 — 18 December 2008 9 of 18

NXP Semiconductors

BLF871

UHF power LDMOS transistor

Table 8. Typical impedance

…continued

Simulated Zi and ZL device impedance; impedance info at VDS = 42 V.

f Z

i

MHz Ω Ω

925 1.004 + j0.459 2.456 + j2.455
950 1.005 + j0.540 2.378 + j2.388
975 1.007 + j0.619 2.303 + j2.320
1000 1.009 + j0.696 2.230 + j2.250

7.5 Reliability

5

10

Years

4

10

3

10

2

10

(1) (2) (3) (4) (5) (6)

Z

L

001aaj287

10

(7) (8) (9) (10) (11)

1

0 642

TTF (0.1 % failure fraction).

The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) × 1 / δ.
(1) Tj = 100 °C
(2) Tj = 110 °C
(3) Tj = 120 °C
(4) Tj = 130 °C
(5) Tj = 140 °C
(6) Tj = 150 °C
(7) Tj = 160 °C
(8) Tj = 170 °C
(9) Tj = 180 °C

(10) Tj = 190 °C
(11) Tj = 200 °C

Fig 13. BLF871 electromigration (I

DS(DC)

I

(A)

DS(DC)

)

BLF871_1 © NXP B.V. 2008. All rights reserved.

Objective data sheet Rev. 01 — 18 December 2008 10 of 18

NXP Semiconductors

BLF871

UHF power LDMOS transistor

8. Test information

Table 9. List of components

For test circuit, see Figure 14, Figure 15 and Figure 16.

Component Description Value Remarks

C1, C2 multilayer ceramic chip capacitor 5.1 pF
C3, C4 multilayer ceramic chip capacitor 10 pF
C5 multilayer ceramic chip capacitor 6.8 pF
C6 multilayer ceramic chip capacitor 4.7 pF
C7 multilayer ceramic chip capacitor 2.7 pF
C8, C9, C10, C25,

multilayer ceramic chip capacitor 100 pF

C26
C11, C27 multilayer ceramic chip capacitor 10 µF TDK C570X7R1H106KT000N or

C12 electrolytic capacitor 470 µF; 63 V
C20 multilayer ceramic chip capacitor 10 pF
C21 multilayer ceramic chip capacitor 8.2 pF
C22 trimmer 0.6 pF to 4.5 pF Tekelec
C23 multilayer ceramic chip capacitor 6.8 pF
C24 multilayer ceramic chip capacitor 3.9 pF
L1 stripline ­L2 stripline ­L3 stripline ­L4 stripline ­L5 stripline ­L6 stripline ­L7 stripline ­L20 stripline ­L21 stripline ­L22 stripline ­L23 stripline ­R1 resistor 100 Ω
R2 resistor 10 kΩ

[1]
[2]
[1]
[1]
[1]
[1]

capacitor of same quality.

[3]
[3]

[3]
[3]
[4]

(W × L) 7 mm × 15 mm

[4]

(W × L) 2.4 mm × 9mm

[4]

(W × L) 2.4 mm × 10 mm

[4]

(W × L) 2.4 mm × 25 mm

[4]

(W × L) 2.4 mm × 10 mm

[4]

(W × L) 2.0 mm × 20 mm

[4]

(W × L) 2.0 mm × 21 mm

[4]

(W × L) 7 mm × 12 mm

[4]

(W × L) 2.4 mm × 13 mm

[4]

(W × L) 2.4 mm × 31 mm

[4]

(W × L) 2.4 mm × 5mm

[1] American technical ceramics type 100B or capacitor of same quality.
[2] American technical ceramics type 180R or capacitor of same quality.
[3] American technical ceramics type 100A or capacitor of same quality.
[4] Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization);

thickness copper plating = 35 µm.

BLF871_1 © NXP B.V. 2008. All rights reserved.

Objective data sheet Rev. 01 — 18 December 2008 11 of 18

BLF871_1 © NXP B.V. 2008. All rights reserved.

Objective data sheet Rev. 01 — 18 December 2008 12 of 18

xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx
xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx
xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx

V

GG

R2

C27

C11 C12

V

DD

NXP Semiconductors

L23

C25 C850 Ω 50 Ω

C23 C22C24 C21

See Table 9 for a list of components.

Fig 14. Class-AB common-source broadband amplifier

C26

C20

C9

R1

L20 L1 L2 L3 L4 L5L21L22

L6

C1

C2

L7

C10

C3

C4 C5 C6 C7

001aaj288

UHF power LDMOS transistor

BLF871

NXP Semiconductors

BLF871

UHF power LDMOS transistor

76.2 mm

40 mm 40 mm

001aaj289

Fig 15. Printed-Circuit Board (PCB) for class-AB common source amplifier

BLF871_1 © NXP B.V. 2008. All rights reserved.

Objective data sheet Rev. 01 — 18 December 2008 13 of 18

NXP Semiconductors

BLF871

UHF power LDMOS transistor

C25

L23

C24

L23

C26

L21

C23

R2

C27

L6

R1

C20

C22

L20 L1 L2

C21

L7

C9

C1

C2

C10

C11

C12

C3

C4

C5

C8

L3

L5

C6

C7

L4

001aaj290

See Table 9 for a list of components.

Fig 16. Component layout for class-AB common source amplifier

BLF871_1 © NXP B.V. 2008. All rights reserved.

Objective data sheet Rev. 01 — 18 December 2008 14 of 18

NXP Semiconductors

9. Package outline

BLF871

UHF power LDMOS transistor

Flanged LDMOST ceramic package; 2 mounting holes; 2 leads

D

A

3

D

1

U

1

q

1

H

U

2

A

C

p

F

B

w

M M M

1

AB

SOT467C

c

E

1

E

2

U

1

0.235

0.225

EUROPEAN

PROJECTION

U

5.97

5.72

Q

2

w

w

2

1

0.25

0.51

0.010 0.020

ISSUE DATE

99-12-06
99-12-28

w

M M

scale

18.54

17.02

0.73

0.67

C

2

3.43

3.18

0.135

0.125

b

0 5 10 mm

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

mm

inch

OUTLINE
VERSION

SOT467C

A

4.67

3.94

0.184

0.155

b

5.59

5.33

0.220

0.210

cD

0.15

0.10

0.006

0.004

IEC JEDEC EIAJ

9.25

9.04

0.364

0.356

D

9.27

9.02

0.365

0.355

E

5.92

5.77

0.233

0.227

E

1

1.65

5.97

1.40

5.72

0.065

0.235

0.055

0.225

REFERENCES

1

FH p q

UNIT

Q

2.21

1.96

0.087

0.077

14.27

0.562

20.45

20.19

0.805

0.795

Fig 17. Package outline SOT467C

BLF871_1 © NXP B.V. 2008. All rights reserved.

Objective data sheet Rev. 01 — 18 December 2008 15 of 18

NXP Semiconductors

10. Abbreviations

Table 10. Abbreviations

Acronym Description

CW Continuous Wave
CCDF Complementary Cumulative Distribution Function
DVB Digital Video Broadcast
DVB-T Digital Video Broadcast - Terrestrial
ESD ElectroStatic Discharge
HF High Frequency
IMD3 Third order InterModulation Distortion
LDMOS Laterally Diffused Metal-Oxide Semiconductor
LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor
OFDM Orthogonal Frequency Division Multiplexing
PAR Peak-to-Average power Ratio
PEP Peak Envelope Power
RF Radio Frequency
TTF Time To Failure
UHF Ultra High Frequency
VSWR Voltage Standing-Wave Ratio

BLF871

UHF power LDMOS transistor

11. Revision history

Table 11. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLF871_1 20081218 Objective data sheet - -

BLF871_1 © NXP B.V. 2008. All rights reserved.

Objective data sheet Rev. 01 — 18 December 2008 16 of 18

NXP Semiconductors

12. Legal information

12.1 Data sheet status

BLF871

UHF power LDMOS transistor

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices.The latest product status

information is available on the Internet at URL

[1][2]

Product status

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title.A short data sheet is intended
for quickreference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or

[3]

http://www.nxp.com.

Definition

malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device.Limiting values are stress ratingsonly and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.

12.4 Trademarks

Notice: Allreferenced brands, productnames, service names and trademarks
are the property of their respective owners.

13. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

BLF871_1 © NXP B.V. 2008. All rights reserved.

Objective data sheet Rev. 01 — 18 December 2008 17 of 18

NXP Semiconductors

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Application information. . . . . . . . . . . . . . . . . . . 4

7.1 Narrowband RF figures. . . . . . . . . . . . . . . . . . . 5

7.1.1 CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

7.1.2 2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

7.1.3 DVB-T. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

7.2 Broadband RF figures. . . . . . . . . . . . . . . . . . . . 7

7.2.1 2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

7.2.2 DVB-T. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

7.3 Ruggedness in class-AB operation. . . . . . . . . . 9

7.4 Impedance information. . . . . . . . . . . . . . . . . . . 9

7.5 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . 11

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 16

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 16

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 17

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17

13 Contact information. . . . . . . . . . . . . . . . . . . . . 17

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

BLF871

UHF power LDMOS transistor

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2008. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

Date of release: 18 December 2008

Document identifier: BLF871_1