Philips blf6g10s-45 Datasheet

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BLF6G10S-45

Power LDMOS transistor

Rev. 03 — 20 January 2010 Product data sheet

1. Product profile

1.1 General description

45 W LDMOS power transistor for base station applications at frequ en cies fr om 700 MHz to 1000 MHz.

Table 1. Typical performance

RF performance at T

Mode of operation f V

2-carrier W-CDMA 920 to 960 28 1.0 23 8 −48.5

[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR= 7.5 dB at 0.01 % probability on CCDF per carrier; carrier

spacing5MHz.

= 25 °C in a common source class-AB production test circuit.

case

(MHz) (V) (W) (dB) (%) (dBc)

L(AV)

ACPR

[1]

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

1.2 Features

 Typica l 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a

supply voltage of 28 V and an I

 Average output power = 1.0 W  Gain = 23 dB  Efficiency = 8 %

 ACPR = −48.5 dBc  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (700 MHz to 1000 MHz)  Internally matched for ease of use  Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances

(RoHS)

of 350 mA:

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NXP Semiconductors

1.3 Applications

 RF power amplifiers for W-CDMA base stations and multi carrier applications in the

700 MHz to 1000 MHz frequency range.

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Symbol

1drain 2gate 3source

[1] Connected to flange.

3. Ordering information

BLF6G10S-45

Power LDMOS transistor

[1]

sym11

Table 3. Ordering information

Type number Package

BLF6G10S-45 - ceramic earless flanged package; 2 leads SOT608B

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

stg

drain-source voltage - 65 V gate-source voltage −0.5 +13 V drain current - 13 A storage temperature −65 +150 °C junction temperature - 225 °C

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Unit

th(j-case)

thermal resistance from junction to case

Name Description Version

case

=80°C;

1.7 K/W

PL= 12.5 W

Product data sheet Rev. 03 — 20 January 2010 2 of 10

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NXP Semiconductors

6. Characteristics

Table 6. Characteristics

Tj = 25 °C per section; unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

(BR)DSS

GS(th)

GSq

DSS

DSX

GSS

DS(on)

BLF6G10S-45

Power LDMOS transistor

drain-source breakdown voltage

gate-source threshold voltage VDS=10 V; ID=72mA 1.35 1.9 2.35 V gate-source quiescent voltage VDS=28 V; ID= 430 mA 1.7 2.15 2.7 V drain leakage current VGS=0V; VDS=28V--1.4μA drain cut-off current VGS=V

gate leakage current VGS=11V; VDS= 0 V - - 140 nA forward transconductance VDS=10V; ID=3.6A - 5 - S drain-source on-state

resistance

VGS=0V; ID=0.5mA65--V

=10V

VGS=V

GS(th)

+3.75 V;

+ 3.75 V;

-12.5-A

-0.2-Ω

ID=2.52A

7. Application information

Table 7. Application information

Mode of operation: 2-carrier W-CDMA; PAR7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f RF performance at V class-AB production test circuit.

Symbol Parameter Conditions Min Typ Max Unit

ACPR adjacent channel power ratio P

7.1 Ruggedness in class-AB operation

The BLF6G10S-45 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: V I

power gain P input return loss P drain efficiency P

=350mA; PL = 35 W (CW); f = 960 MHz.

= 922.5 MHz; f2= 927.5 MHz; f3= 952.5 MHz; f4= 957.5 MHz;

=28V; IDq= 350 mA; T

=25 °C; unless otherwise specified; in a

case

= 1.0 W 21.8 23 24.5 dB

L(AV)

= 1.0 W 5.5 9 - dB

L(AV)

= 1.0 W 7 8 - %

L(AV)

= 1.0 W - −48.5 −45.5 dBc

L(AV)

=28V;

Product data sheet Rev. 03 — 20 January 2010 3 of 10

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NXP Semiconductors

001aaf991

BLF6G10S-45

Power LDMOS transistor

(dB)

0504020 3010

PL (W)

(%)

VDS=28V; IDq= 350 mA; f = 960 MHz.

Fig 1. One-tone CW power gain and drain effici ency as functions of load power; typical values

(dB)

001aaf992

(%)

IMD

(dBc)

IMD3

IMD5

−30

IMD7

001aaf993

0806020 40

L(PEP)

−5

(W)

VDS=28V; IDq= 350 mA; f1= 960 MHz; f

= 960.1 MHz.

Fig 2. Two-tone CW power gain and drain efficiency

as functions of peak envelope load power; typical values

−60

−90

0806020 40

=28V; IDq= 350 mA; f1= 960 MHz;

= 960.1 MHz.

L(PEP)

(W)

Fig 3. Intermodulation distortion as a function of

peak envelope load power; typical values

Product data sheet Rev. 03 — 20 January 2010 4 of 10

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NXP Semiconductors

BLF6G10S-45

Power LDMOS transistor

(1) (2)

L(AV)

001aaf994

(dBm)

(dB)

20 363224 28

(1)

(2)

VDS=28V; IDq= 350 mA; f1= 952.5 MHz; f

= 957.5 MHz; carrier spacing 5 MHz.

(1) f = 955 MHz. (2) f = 925 MHz.

Fig 4. 2-carrier W-CDMA power gain and drain

efficiency as functions of average load power; typical values

(%)

L(AV)

001aaf997

(dBm)

−40

ACPR

(dBc)

−45

−50

−55

−60

20 363224 28

=28V; IDq= 350 mA; carrier spacing 5 MHz.

(1)

(2)

(1) f = 955 MHz. (2) f = 925 MHz.

Fig 5. 2-carrier W-CDMA adjacent channel power

ratio as function of average load power; typical values

8. Test information

input 50 Ω

Fig 6. Test circuit for operation at 900 MHz

C11

C12

C13 C14

C6 C5

C15 C16C10

001aaf995

output

50 Ω

Product data sheet Rev. 03 — 20 January 2010 5 of 10

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NXP Semiconductors

BLF6G10S-45

Power LDMOS transistor

−

C15

C16

BLF6G10S-45

OUTPUTBOARD TP

001aaf99

C10

C11

C2 C3

C12 C13

C14

BLF6G10S-45

INPUTBOARD

The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr=3.5 and thickness = 0.76 mm.

See Table 8 for list of components.

Fig 7. Component layout for 920 MHz and 960 MHz test circuit for 2-carrier W-CDMA

Table 8. List of components (see Figure 6

and Figure 7).

All capacitors should be soldered vertically.

Component Description Value Remarks

C1 multilayer ceramic chip capacitor 3.0 pF C2 multilayer ceramic chip capacitor 1 pF C3 multilayer ceramic chip capacitor 6.2 pF C4 multilayer ceramic chip capacitor 1.8 pF C5 multilayer ceramic chip capacitor 1.0 pF C6 multilayer ceramic chip capacitor 6.8 pF C7 multilayer ceramic chip capacitor 6.8 pF C8, C11, C14 multilayer ceramic chip capacitor 68 pF C9, C10, C12, C13 multilayer ceramic chip capacitor 330 nF;

[1] [1] [1] [1] [1] [1] [1] [1] [2]

50 V

C15 multilayer ceramic chip capacitor 4.5 μF;

[2]

50 V C16 Electrolytic capacitor 220 μF F1 Ferrite SMD bead - Ferroxcube BDS3/3/8.9-4S2

or equivalent Q3 BLF6G10S-45 R1 SMD resistor 4.7 Ω;

0.1 W

R2 SMD resistor 6.8 Ω;

0.1 W

[1] American Technical Ceramics type 100B or capacitor of same quality. [2] TDK or capacitor of same quality.

Product data sheet Rev. 03 — 20 January 2010 6 of 10

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NXP Semiconductors

BLF6G10S-45

Power LDMOS transistor

9. Package outline

eramic earless flanged package; 2 leads

SOT608

DIMENSIONS (mm dimensions are derived from the original inch dimensions)

UNIT A

4.62

3.76

0.182

inch

0.148

7.24

6.99

0.285

0.275

c D

0.15

0.10

0.006

0.004

10.21

10.01

0.402

0.394

D1E E

10.29

10.21

10.03

10.01

0.405

0.402

0.395

0.394

10.29

10.03

0.405

0.395

w1A

0 5 mm

scale

F H

1.14

15.75

0.89

14.73

0.045

0.620

0.035

0.580

Q U1U

1.70

1.45

0.067

0.057

10.24

9.98

0.403

0.393

10.24

9.98

0.403

0.393

0.51

0.020

OUTLINE VERSION

SOT608B

IEC JEDEC JEITA

REFERENCES

EUROPEAN

PROJECTION

ISSUE DATE

06-12-06 09-08-26

Fig 8. Package outline SOT608B

Product data sheet Rev. 03 — 20 January 2010 7 of 10

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NXP Semiconductors

10. Abbreviations

Table 9. Abbreviations

Acronym Description

3GPP 3rd Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Waveform DPCH Dedicated Physical CHannel LDMOS Laterally Diffused Metal Oxide Semiconductor PAR Peak-to-Average power Ratio PDPCH transmission Power of the Dedi cated Physical CHannel RF Radio Frequency SMD Surface-Mount Device VSWR Voltage Standing-Wave Ratio W-CDMA Wideband Code Division Multiple Access

BLF6G10S-45

Power LDMOS transistor

11. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLF6G10S-45_3 20100120 Product data sheet - BLF6G10S-45_2 Modifications:

BLF6G10S-45_2 20090210 Product data sheet - BLF6G10S-45_1 BLF6G10S-45_1 20070223 Preliminary data sheet - -

• Section 1.1 “General description” lower frequency range extended to 700 MHz from 800 MHz.

• Section 1.2 “Features” lower frequency range extended to 700 MHz from 800 MHz.

• Section 1.3 “Applications” lower frequency range extended to 700 MHz from 800 MHz.

• Section 12 “Legal information” export control disclaimer added.

Product data sheet Rev. 03 — 20 January 2010 8 of 10

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NXP Semiconductors

BLF6G10S-45

Power LDMOS transistor

12. Legal information

12.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this docu ment may have changed si nce this docum ent was pub lished and may dif fer in case of multiple devices. The latest product statu s

information is available on the Internet at URL http://www.nxp.com.

[1][2]

Product status

[3]

Definition

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied u pon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconduct ors does not give any repr esentatio ns or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonabl y be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

, including those pertaining to warranty,

12.4 Trademarks

Notice: All referenced brands, prod uct names, service names and trad emarks are the property of their respective owners.

13. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Product data sheet Rev. 03 — 20 January 2010 9 of 10

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NXP Semiconductors

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . 2

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Application information. . . . . . . . . . . . . . . . . . . 3

7.1 Ruggedness in class-AB operation . . . . . . . . . 3

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 5

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 8

11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

13 Contact information. . . . . . . . . . . . . . . . . . . . . . 9

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

BLF6G10S-45

Power LDMOS transistor

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Date of release: 20 January 2010

Document identifier: BLF6G10S-45_3