Philips blf647 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D392

BLF647

UHF power LDMOS transistor

Product specification
Supersedes data of 2001 Aug 02

2001 Nov 27

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF647

FEATURES

• High power gain

• Easy power control

• Excellent ruggedness

• Source on underside eliminates DC isolators, reducing

common mode inductance

• Designed for broadband operation (HF to 800 MHz)

• Internal input damping for excellent stability over the

whole frequency range.

APPLICATIONS

• Communication transmitter applications in the
HF to 800 MHz frequency range.

DESCRIPTION

Silicon N-channel enhancement mode lateral D-MOS
push-pull transistor in a SOT540A package with ceramic
cap. The common source is connected to the mounting
flange.

PINNING - SOT540A

PIN DESCRIPTION

1 drain 1
2 drain 2
3 gate 1
4 gate 2
5 source, connected to flange

12

Top view

Fig.1 Simplified outline.

5

43

MBK777

QUICK REFERENCE DATA

RF performance at Th=25°C in a common source test circuit.

MODE OF

OPERATION

f

(MHz)

V

(V)

DS

P

(W)

L

G

(dB)

p

η

D

(%)

d

im

(dBc)

CW, class-AB 600 28 120 >14.5 >55 −
2-tone,

class-AB

f

= 600; f2= 600.1 28 120 (PEP) >14.5 >40 ≤−26

1

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GS

I

D

P

tot

T

stg

T

j

drain-source voltage − 65 V
gate-source voltage −±15 V
drain current (DC) − 18 A
total power dissipation Tmb≤ 25 °C − 290 W
storage temperature −65 +150 °C
junction temperature − 200 °C

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

2001 Nov 27 2

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF647

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

R

th mb-h

thermal resistance from junction to mounting base Tmb=25°C; P
thermal resistance from mounting base to heatsink 0.2 K/W

CHARACTERISTICS

Tj=25°C per section unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GSth

I

DSS

I

DSX

I

GSS

g

fs

R

DSon

C

iss

drain-source breakdown voltage VGS= 0; ID= 1.4 mA 65 −−V
gate-source threshold voltage VDS= 20 V; ID= 140 mA 4 − 5.5 V
drain-source leakage current VGS= 0; VDS=28V −−1.2 µA
drain cut-off current VGS=V

+9V; VDS=10V 18 −−A

GSth

gate leakage current VGS= ±15 V; VDS=0 −−25 nA
forward transconductance VDS= 20 V; ID=4A − 4 − S
drain-source on-state resistance VGS=V

+9V; ID=4A − 160 − mΩ

GSth

input capacitance VGS=0;VDS= 28 V; f = 1 MHz;

note 1

C

oss

C

rss

output capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 43 − pF
feedback capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 6 − pF

= 290 W 0.6 K/W

tot

− 80 − pF

Note

1. Capacitance values of the die only.

100

handbook, halfpage

C

oss

(pF)

80

60

40

20

0

03010 40 50

VGS= 0; f= 1 MHz; Tj=25°C.

20

Fig.2 Output capacitance as a function of

drain-source voltage; typical values per
section.

MGW546

VDS (V)

2001 Nov 27 3

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF647

APPLICATION INFORMATION

RF performance in a common source class-AB circuit. Th=25°C; R

= 0.2 K/W, unless otherwise specified.

th mb-h

MODE OF OPERATION

f

(MHz)

V

(V)

DS

P

(W)

L

G

p

(dB)

η

(%)

D

d

im

(dBc)

CW, class-AB 600 28 120 >14.5 >55 −
2-tone, class-AB f

= 600; f2= 600.1 28 120 (PEP) >14.5 >40 ≤−26

1

CW, class-AB 800 32 150 typ. 12.5 typ. 60 −
2-tone, class-AB f

= 800; f2= 800.1 32 150 (PEP) typ. 13 typ. 45 typ. −30

1

Ruggedness in class-AB operation

The BLF647 is capable of withstanding a loadmismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: V

= 28 V; f = 100 MHz at rated load power.

DS

The BLF647 is capable of withstanding abrupt source or load mismatch errors under the nominal power conditions.

Impedances (per section)
At f = 600 MHz, P

= 120 W, VDS= 28 V and IDQ= 1 A: Zin= 1.0 + j2.0 Ω and ZL= 2.7 + j0.7 Ω.

L

At f = 800 MHz, PL= 150 W, VDS= 32 V and IDQ= 1 A: Zin= 1.0 + j3.8 Ω and ZL= 1.8 + j0.7 Ω.

2001 Nov 27 4

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF647

Application at 600 MHz

20

handbook, halfpage

G

p

(dB)

15

10

5

0

0 10050 150 200

Th=25°C; VDS= 28 V; IDQ=1A.
2-tone: f1= 600 MHz (−6 dB); f2= 600.1 MHz (−6 dB)
measured in 600 MHz test circuit.

G

p

η

D

PL (PEP) (W)

MGW540

Fig.3 Powergain anddrainefficiency asfunctions

of peak envelope load power; typical
values.

80

60

40

20

0

η

(%)

handbook, halfpage

D

0

d

im

(dBc)

−20
d

3

−40

−60

−80

0 10050 150 200

Th=25°C; VDS= 28 V; IDQ=1A.
2-tone: f1= 600 MHz (−6 dB); f2= 600.1 MHz (−6 dB)
measured in 600 MHz test circuit.

d

5

PL (PEP) (W)

MGW541

Fig.4 Intermodulation distortion as a function of

peak envelopeoutput power;typical values.

20

handbook, halfpage

G

p

(dB)

15

10

5

0

0 10050 150 200

Th=25°C; VDS= 28 V; IDQ= 1 A; CW, class-AB; f = 600 MHz;
measured in 600 MHz test circuit.

G

p

η

D

MGW542

PL (W)

80

60

40

20

0

η

(%)

D

Fig.5 Powergain anddrainefficiency asfunctions

of load power; typical values.

2001 Nov 27 5

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2001 Nov 27 6

3

C7

R2

L15

L3

50 Ω
input

B1

C1

C2

L1

C3

C5

L2

L4

+

V

R1

bias

C9

R3

C8

C6

TR1

L16

handbook, full pagewidth

L5

L7

C11

C10

L6

C12

L8

8

C13

L10

L9

C14

L11

B2

L12

+

V

D

C20

L14 R4

C18

C15

C19

L13

C16

C17

50 Ω

output

MGW539

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF647

Dimensions in mm.

Fig.6 Class-AB common source 600 MHz test circuit.

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF647

List of components class-AB 600 MHz test circuit (see Figs 6 and 7)

COMPONENT DESCRIPTION VALUE DIMENSIONS

C1, C2 multilayer ceramic chip capacitor; note 1 30 pF
C3 multilayer ceramic chip capacitor; note 1 8.2 pF
C5 multilayer ceramic chip capacitor; note 1 16 pF
C6 Tekelec trimmer 0.6 to 7.5 pF
C7, C8 multilayer ceramic chip capacitor; note 1 100 pF
C9 electrolytic capacitor 10 µF
C10 multilayer ceramic chip capacitor; note 2 2 pF
C11, C12 multilayer ceramic chip capacitor; note 2 10 pF
C13 multilayer ceramic chip capacitor; note 2 8.2 pF
C14 multilayer ceramic chip capacitor; note 2 1.5 pF
C15, C16, C17 multilayer ceramic chip capacitor; note 2 100 pF
C18 SMD capacitor 1 µF 2222 595 16754
C19 electrolytic capacitor 470 µF
C20 electrolytic capacitor 100 µF
L1, L2 semi rigid coax UT70-25 Z = 25 Ω±1.5 Ω 30.6 mm
L3, L4 stripline; note 3 15 × 10 mm
L5, L6 stripline; note 3 5.5 × 15 mm
L7, L8 stripline; note 3 10 × 10 mm
L9, L10 stripline; note 3 15 × 5mm
L11, L12 stripline; note 3 48.5 × 2.4 mm
L13 stripline; note 3 10 × 2.4 mm
L14 ferrite
L15, L16 Coilcraft SMD coil 1008CS-102XKBC 1 µH
B1 semi rigid coax (lambda/2) Z = 50 Ω±1.5 Ω lambda/2
B2 semi rigid coax balun UT70-25 Z = 25 Ω±1.5 Ω 48.5 mm
R1 resistor 1 kΩ
R2, R3 resistor 100 Ω
R4 resistor 3,3 Ω

CATALOGUE

No.

Notes

1. American Technical Ceramics type 100A or capacitor of same quality.

2. American Technical Ceramics type 180R or capacitor of same quality.

3. The striplines are on a double copper-clad printed-circuit board: Rogers 5880 (εr= 2.2); thickness 0.79 mm.

2001 Nov 27 7

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF647

handbook, full pagewidth

B1

+V

bias

C1

C2

D

C18

C15

R4

C16

C19

95

80

C20

C17

95

R1

C9

L1

L2

C7

C8

R3

C3

R2

C6

L15

BLF647

C5

3

L16

C10

C11

C12

+V

L14

B2

C13

C14

8

Dimensions in mm.
The components are situated onone side of the Rogers5880printed-circuit board, the other sideis unetched and serves asa ground plane.

Earth connections from the component side to the ground plane are made by through metallization.

Fig.7 Printed-circuit board and component layout for class-AB 600 MHz test circuit.

2001 Nov 27 8

MGW547

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF647

Application at 800 MHz

20

handbook, halfpage

G

p

(dB)

15

10

5

0

0 100 200 300

Th=25°C; VDS= 32 V; IDQ=1A.
2-tone: f1= 800 MHz (−6 dB); f2= 800.1 MHz (−6 dB)
measured in 800 MHz test circuit.

G

p

η

D

MGW543

PL (PEP) (W)

Fig.8 Powergain anddrainefficiency asfunctions

of peak envelope load power; typical
values.

80

60

40

20

0

η

(%)

handbook, halfpage

D

0

d

im

(dBc)

−20

−40

−60

−80

0 100 200 300

Th=25°C; VDS= 32 V; IDQ=1A.
2-tone: f1= 800 MHz (−6 dB); f2= 800.1 MHz (−6 dB)
measured in 800 MHz test circuit.

MGW544

d

3

d

5

PL (PEP) (W)

Fig.9 Intermodulation distortion as a function of

peak envelopeoutput power;typical values.

20

handbook, halfpage

G

p

(dB)

15

10

5

0

Th=25°C; VDS= 32 V; IDQ= 1 A; CW, class-AB; f = 800 MHz;
measured in 800 MHz test circuit.

G

p

η

D

0 10050 150 200

MGW545

PL (W)

80

60

40

20

0

η

(%)

D

Fig.10 Power gainanddrain efficiencyasfunctions

of load power; typical values.

2001 Nov 27 9

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o

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2001 Nov 27 10

50 Ω
input

B1

C1

C2

3

C7

R2

L15

L3

L1

C5

L2

L4

+

V

R1

bias

C9

R3

C8

C6

TR1

L16

k, full pagewidth

3

L5

C10

C11

L6

L7

L8

C12

C13

+

V

D

C20

8

L9

C14

L10

L11

B2

L12

L14 R4

C18

C15

C19

C17

L13

C16

50 Ω

output

MGW538

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF647

Dimensions in mm.

Fig.11 Class-AB common source 800 MHz test circuit.

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF647

List of components class-AB 800 MHz test circuit (see Figs 11 and 12)

COMPONENT DESCRIPTION VALUE DIMENSIONS

C1, C2 multilayer ceramic chip capacitor; note 1 30 pF
C5 multilayer ceramic chip capacitor; note 1 10 pF
C6 tekelec trimmer 0.6 to 7.5 pF
C7, C8 multilayer ceramic chip capacitor; note 1 100 pF
C9 electrolytic capacitor 10 µF
C10, C11 multilayer ceramic chip capacitor; note 2 8.2 pF
C12, C13 multilayer ceramic chip capacitor; note 2 10 pF
C14 multilayer ceramic chip capacitor; note 2 4.7 pF
C15, C16 multilayer ceramic chip capacitor; note 2 100 pF
C17 multilayer ceramic chip capacitor; note 2 20 pF
C18 SMD capacitor 1 µF 2222 595 16754
C19 electrolytic capacitor 470 µF
C20 electrolytic capacitor 100 µF
L1, L2 semi rigid coax UT70-25 Z = 25 Ω±1.5 Ω 30.6 mm
L3, L4 stripline; note 3 15 × 10 mm
L5, L6 stripline; note 3 5.5 × 15 mm
L7, L8 stripline; note 3 10 × 10 mm
L9, L10 stripline; note 3 15 × 5mm
L11, L12 stripline; note 3 48.5 × 2.4 mm
L13 stripline; note 3 10 × 2.4 mm
L14 ferrite
L15, L16 Coilcraft SMD coil 1008CS-102XKBC 1 µH
B1 semi rigid coax (lambda/2) Z = 50 Ω±1.5 Ω lambda/2
B2 semi rigid coax balun UT70-25 Z = 25 Ω±1.5 Ω 48.5 mm
R1 resistor 1 kΩ
R2, R3 resistor 100 Ω
R4 resistor 3,3 Ω

CATALOGUE

No.

Notes

1. American Technical Ceramics type 100A or capacitor of same quality.

2. American Technical Ceramics type 180R or capacitor of same quality.

3. The striplines are on a double copper-clad printed-circuit board: Rogers 5880 (ε

2001 Nov 27 11

= 2.2); thickness 0.79 mm.

r

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF647

handbook, full pagewidth

B1

+V

bias

C1

C2

95

R1

C9

L1

L2

C7

C8

R3

R2

C6

L15

BLF647

C5

3

L16

C11

C10

C13

C12

3

+V

L14

B2

C14

8

95

80

R4

C16

C19

C20

C17

D

C18

C15

Dimensions in mm.
The components are situated onone side of the Rogers5880printed-circuit board, the other sideis unetched and serves asa ground plane.

Earth connections from the component side to the ground plane are made by through metallization.

Fig.12 Printed-circuit board and component layout for class-AB 800 MHz test circuit.

2001 Nov 27 12

MGW548

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF647

PACKAGE OUTLINE

Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT540A

D

A

F

D

1

U

1

q

H

1

w

M M

2

C

C

12

H

U

2

5

A

e

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

8.51

8.26

0.335

0.325

c

0.15

0.10

0.006

0.004

Db

22.05

21.64

0.868

0.852

D

22.05

21.64

0.868

0.852

e U

1

10.26

10.21

10.06

0.404

0.402

0.396

UNIT

mm

inches

A

5.77

5.00

0.227

0.197

43

b

0 5 10 mm

EE

1

10.31

10.01

0.406

0.394

w

M

3

scale

F

1.78

1.52

0.070

0.060

H

15.75

14.73

0.620

0.580

H

1

18.72

18.47

0.737

0.727

B

p

w

1

p

3.38

3.12

0.133

0.123

M MM

AB

qw

Q

2.72

27.94

2.46

0.107

0.097

U

1

34.16

33.91

1.345

1.335

E

1

9.91

9.65

0.390

0.380

c

E

Q

w

2

1

2

0.250.25 0.51

0.0100.010 0.0201.100

w

3

OUTLINE

VERSION

SOT540A

IEC JEDEC EIAJ

REFERENCES

2001 Nov 27 13

EUROPEAN

PROJECTION

ISSUE DATE

99-08-27
99-12-28

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF647

DATA SHEET STATUS

PRODUCT

DATA SHEET STATUS

Objective data Development This data sheet contains data from the objective specification for product

Preliminary data Qualification This data sheet contains data from the preliminary specification.

Product data Production This data sheet contains data from the product specification. Philips

(1)

STATUS

(2)

DEFINITIONS

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting valuesdefinition  Limitingvalues givenare in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese orat anyother conditionsabovethose givenin the
Characteristics sectionsof the specification isnot implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation orwarrantythat suchapplications willbe
suitable for the specified use without further testing or
modification.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably beexpected toresult inpersonal injury.Philips
Semiconductorscustomers usingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuse ofany oftheseproducts, conveysno licenceortitle
under any patent, copyright, or mask work right to these
products,and makesno representationsor warrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.

2001 Nov 27 14

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF647

NOTES

2001 Nov 27 15

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [email protected].

© Koninklijke Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document doesnot formpart of any quotation or contract, isbelieved tobe accurate and reliable and may bechanged
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 613524/03/pp16 Date of release: 2001 Nov 27 Document order number: 9397 75008838

SCA73