Philips blf578 Datasheet

BLF578

Power LDMOS transistor

Rev. 02 — 4 February 2010 Product data sheet

1. Product profile

1.1 General description

A 1200 W LDMOS power transistor for broadcast applications and industrial applications
in the HF to 500 MHz band.

Table 1. Application information

Mode of operation f V

CW 108 50 1000 26 75
pulsed RF 225 50 1200 24 71

CAUTION

DS

(MHz) (V) (W) (dB) (%)

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.

P

L

G

p

η

D

1.2 Features

 Typi cal pulse d per formance a t fr equen cy of 225 MHz, a supply volt a ge of 50 V and an

I

of 40 mA, a tp of 100 μs with δ of 20 %:

Dq

 Output power = 1200 W
 Power gain = 24 dB

 Efficiency = 71 %
 Easy power control
 Integrated ESD protection
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (10 MHz to 500 MHz)
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazard ou s Subs tances

(RoHS)

1.3 Applications

 Industrial, scientific and medical applications
 Broadcast transmitter applications

NXP Semiconductors

7

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 drain1
2 drain2
3 gate1
4 gate2
5 source

[1] Connected to flange.

3. Ordering information

Table 3. Ordering information

Type number Package

BLF578 - flanged balanced LDMOST ceramic package;

BLF578

Power LDMOS transistor

3

4

1

5

2

sym11

SOT539A

12

5

43

[1]

Name Description Version

2 mounting holes; 4 leads

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

GS

I

D

T

stg

T

j

drain-source voltage - 110 V
gate-source voltage −0.5 +11 V
drain current - 88 A
storage temperature −65 +150 °C
junction temperature - 225 °C

BLF578_2 © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 02 — 4 February 2010 2 of 14

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5. Thermal characteristics

BLF578

Power LDMOS transistor

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Unit

R
Z

th(j-c)

th(j-c)

thermal resistance from junction to case Tj = 150 °C
transient thermal impedance from junction to case Tj = 150 °C; tp = 100 μs; δ = 20 %

[1] Tj is the junction temperature.
[2] R

is measured under RF conditions.

th(j-c)

[3] See Figure 1.

0.18

Z

th(j-c)

(K/W)

0.12

0.06

0

−7

10

(7)

(6)

(5)

(4)

−6

10

(3)

(2)

(1)

−5

10

−4

10

−3

−2

−1

10

[1][2]

0.14 K/W

[3]

0.04 K/W

001aak924

110

tp (s)

1010

(1) δ = 1 %
(2) δ = 2 %
(3) δ = 5 %
(4) δ = 10 %
(5) δ = 20 %
(6) δ = 50 %
(7) δ = 100 % (DC)

Fig 1. Transient thermal impedance from junction to case as function of pulse duration

6. Characteristics

Table 6. DC characteristics

Tj = 25 °C; per section unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V

(BR)DSS

V

GS(th)

V

GSq

I

DSS

BLF578_2 © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 02 — 4 February 2010 3 of 14

drain-source breakdown

VGS = 0 V; ID = 2.5 mA 110 - - V

voltage
gate-source threshold voltage VDS = 10 V; ID = 500 mA 1.25 1.7 2.25 V
gate-source quiescent voltage VDS = 50 V; ID = 20 mA 0.8 1.3 1.8 V
drain leakage current VGS = 0 V; VDS = 50 V - - 2.8 μA

NXP Semiconductors

001aaj113

Table 6. DC characteristics …continued

Tj = 25 °C; per section unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

I

DSX

I

GSS

R

DS(on)

C

rs

C

iss

C

oss

Table 7. RF characteristics

Mode of operation: pulsed RF; tp = 100 μs; δ = 20 %; f = 225 MHz; RF performance at VDS = 50 V;
IDq = 40 mA; T

Symbol Parameter Conditions Min Typ Max Unit

G

p

RL

η

D

Power LDMOS transistor

drain cut-off current VGS = V

VDS = 10 V
gate leakage current VGS = 11 V; VDS = 0 V - - 280 nA
drain-source on-state

resistance

VGS = V

ID = 16.66 A
feedback capacitance VGS = 0 V; VDS = 50 V;

= 1 MHz

f
input capacitance VGS = 0 V; VDS = 50 V;

f

= 1 MHz

output capacitance VGS = 0 V; VDS = 50 V;

f = 1 MHz

= 25 °C; unless otherwise specified; in a class-AB production test circuit.

case

power gain PL = 1200 W 23 24 25.4 dB
input return loss PL = 1200 W 14 17.5 - dB

in

drain efficiency PL = 1200 W 68 71 - %

GS(th)

GS(th)

+ 3.75 V;

+ 3.75 V;

58 70 - A

- 0.07 - Ω

- 3 - pF

- 403 - pF

- 138 - pF

BLF578

900

C

oss

(pF)

750

600

450

300

150

0

05020 30 4010

VGS = 0 V; f = 1 MHz.

Fig 2. Output capacitance as a function of drain-source voltage; typical values per

section

6.1 Ruggedness in class-AB operation

VDS (V)

The BLF578 is capable of withstanding a load misma tch corr esponding to VSWR = 13 : 1
through all phases under the following conditions: V
pulsed; f

BLF578_2 © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 02 — 4 February 2010 4 of 14

= 225 MHz.

= 50 V; IDq = 40 mA; PL = 1200 W

DS

NXP Semiconductors

7. Application information

7.1 Reliability

BLF578

Power LDMOS transistor

5

10

Years

4

10

3

10

2

10

10

1

0 20168124

(7) (8) (9) (10) (11)

(1) (2) (3) (4) (5) (6)

TTF (0.1 % failure fraction).
The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) × 1/ δ.

(1) Tj = 100 °C
(2) Tj = 110 °C
(3) Tj = 120 °C
(4) Tj = 130 °C
(5) Tj = 140 °C
(6) Tj = 150 °C
(7) Tj = 160 °C
(8) Tj = 170 °C

(9) Tj = 180 °C
(10) Tj = 190 °C
(11) Tj = 200 °C

Fig 3. BLF578 electromigration (ID, total device)

(A)

I

dc

001aaj114

BLF578_2 © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 02 — 4 February 2010 5 of 14

NXP Semiconductors

9

001aak926

001aak927

8. Test information

8.1 Impedance information

Table 8. Typical impedance

Simulated ZS and ZL test circuit impedances.

f Z
MHz Ω Ω

225 3.2 + j2.6 3.7 − j0.2

BLF578

Power LDMOS transistor

S

drain

Z

L

gate

Z

S

001aaf05

Z

L

26

G

p

(dB)

24

22

20

18

100 16001300700 1000400

Fig 4. Definition of transistor impedance

8.2 RF performance

The following figures are measured in a class-AB production test circuit.

8.2.1 1-Tone CW pulsed

G

p

η

D

PL (W)

80

η

D

(%)

60

40

20

0

65

P

L

(dBm)

64

63

62

61

60

59

58

34 403836

ideal P

(1)

L

P

L

Ps (dBm)

(2)

VDS = 50 V; IDq = 40 mA; f = 225 MHz; tp = 100 μs;

δ

= 20 %.

Fig 5. Power gain and drain efficiency as function of

Fig 6. Load Power as function of source power;

load power; typical values

BLF578_2 © NXP B.V. 2010. All rights reserved.

VDS = 50 V; IDq = 40 mA; f = 225 MHz; tp = 100 μs;

δ

= 20 %.
(1) P
(2) P

= 61.0 dBm (1260 W)

L(1dB)

= 61.4 dBm (1400 W)

L(3dB)

typical values

Product data sheet Rev. 02 — 4 February 2010 6 of 14

NXP Semiconductors

001aak928

001aak929

BLF578

Power LDMOS transistor

26

G

p

(dB)

24

22

20

18

100 16001300700 1000400

(4)
(3)
(2)
(1)

PL (W)

VDS = 50 V; f = 225 MHz; tp = 100 μs; δ = 20 %.
(1) IDq = 0 mA
(2) IDq = 40 mA
(3) IDq = 80 mA
(4) IDq = 160 mA

Fig 7. Power gain as a function of load power;

values

typical

80

η

D

(%)

60

40

20

0

100 16001300700 1000400

(1)
(2)
(3)
(4)

PL (W)

VDS = 50 V; f = 225 MHz; tp = 100 μs; δ = 20 %.
(1) IDq = 0 mA
(2) IDq = 40 mA
(3) IDq = 80 mA
(4) IDq = 160 mA

Fig 8. Drain efficiency as a function of load power;

typical values

(4)

001aak931

(5)

PL (W)

26

G

p

(dB)

24

22

(3)

20

18

100 16001300700 1000400

IDq = 40 mA; f = 225 MHz; tp = 100 μs; δ = 20 %.

(2)

(1)

(1) VDS = 30 V
(2) VDS = 35 V
(3) VDS = 40 V
(4) VDS = 45 V
(5) VDS = 50 V

Fig 9. Power gain as a function of load power;

typical values

80

η

D

(%)

60

40

20

0

100 16001300700 1000400

(3)

(2)

(1)

001aak933

(4) (5)

PL (W)

IDq = 40 mA; f = 225 MHz; tp = 100 μs; δ = 20 %.
(1) VDS = 30 V
(2) VDS = 35 V
(3) VDS = 40 V
(4) VDS = 45 V
(5) VDS = 50 V

Fig 10. Drain efficiency as a function of load power;

typical values

BLF578_2 © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 02 — 4 February 2010 7 of 14

NXP Semiconductors

3

4

8.3 Test circuit

BLF578

Power LDMOS transistor

V

GG

C1

C11

R3

L6

L7

R4

C12

input
50 Ω

C2

R1

C7

C5

L3

C6

R2

C3

C4

V

GG

C9

C8

T1

C10

L4

L5

See Table 9 for a list of components.

Fig 11. Class-AB common-source production tes t ci rc u it

V

DD

C25

C28

R5 L1

L12

R6 L2

V

DD

C24

C23

C27

C26

output

50 Ω

001aaj12

C20

T2

C21

C22

C13

C19

C17

C14

C15

L10

L11

C16

C18

L8

L9

C1
C2

R1

C5 C6

R2

C3

C4

C7

C9

C10

C8

T1

C11

R3

R4

C12

See Table 9 for a list of components.

Fig 12. Component layout for class-AB production test circuit

C13

C14

C15

C17 C19

C16 C18 C20

T2

C21

C22

C23

C25

C28
L1

R5

C24

R6

L2

C27

C26

001aaj12

BLF578_2 © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 02 — 4 February 2010 8 of 14

NXP Semiconductors

BLF578

Power LDMOS transistor

Table 9. List of components

For production test circuit, see Figure 11 and Figure 12.
Printed-Circuit Board (PCB): Rogers 5880;
thickness

copper plating = 35 μm.

ε

= 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization);

r

Component Description Value Remarks

C1, C2, C11, C12 multilayer ceramic chip capacitor 4.7 μF TDK4532X7R1E475Mt020U
C2, C3, C27, C28 multilayer ceramic chip capacitor 100 nF Murata X7R 250 V
C5, C7, C8, C21, C22 multilayer ceramic chip capacitor 1 nF
C6 multilayer ceramic chip capacitor 30 pF
C9, C10, C13, C15 multilayer ceramic chip capacitor 62 pF
C14 multilayer ceramic chip capacitor 36 pF
C16, C17 multilayer ceramic chip capacitor 24 pF
C18 multilayer ceramic chip capacitor 30 pF
C19 multilayer ceramic chip capacitor 27 pF
C20 multilayer ceramic chip capacitor 9.1 pF
C23 multilayer ceramic chip capacitor 13 pF
C24 multilayer ceramic chip capacitor 16 pF

[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]

C25, C26 electrolytic capacitor 220 μF; 63 V
L1, L2 3 turns 1 mm copper wire D = 2 mm; length = 3 mm
L3, L12 stripline - (L × W) 15 mm × 2.4 mm
L4, L5, L10, L11 stripline - (L × W) 47 mm × 10 mm
L6, L7, L8, L9 stripline - (L × W) 8 mm × 15 mm
R1, R2 metal film resistor 2 Ω; 0.6 W
R3, R4 metal film resistor 20 Ω; 0.6 W
R5, R6 metal film resistor 1 Ω; 0.6 W
T1, T2 semi rigid coax 50 Ω; 58 mm EZ-141-AL-TP-M17

[1] American Technical Ceramics type 100B or capacitor of same quality.

BLF578_2 © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 02 — 4 February 2010 9 of 14

NXP Semiconductors

F

A

BLF578

Power LDMOS transistor

9. Package outline

langed balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539

D

A

D

1

U

1

q

H

1

w

M M

2

F

B

C

C

c

12

H

U

2

L

A

e

43

b

0 5 10 mm

scale

p

5

w

M

3

w

M M M

1

AB

E

1

Q

E

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

11.81

11.56

0.465

0.455

c

Db

31.55

0.18

30.94

0.10

1.242

0.007

1.218

0.004

IEC JEDEC EIAJ

e U

13.72

0.540

EE

9.53

9.50

9.27

9.30

0.375

0.374

0.365

0.366

REFERENCES

D

1

31.52

30.96

1.241

1.219

F

1

1.75

1.50

0.069

0.059

H

17.12

16.10

0.674

0.634

H

1

25.53

25.27

1.005

0.995

L

3.48

2.97

0.137

0.117

p

3.30

3.05

0.130

0.120

qw

Q

2.26

2.01

0.089

0.079

U

41.28

35.56

41.02

1.625

1.615

EUROPEAN

PROJECTION

1

10.29

10.03

0.405

0.395

2

w

1

ISSUE DATE

00-03-03
10-02-02

w

3

2

0.250.25 0.51

0.0100.010 0.0201.400

A

UNIT

4.7

mm

4.2

0.185

inches

0.165

Note

1. millimeter dimensions are derived from the original inch dimensions.

2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.

OUTLINE
VERSION

SOT539A

Fig 13. Package outline SOT539A

BLF578_2 © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 02 — 4 February 2010 10 of 14

NXP Semiconductors

10. Abbreviations

Table 10. Abbreviations

Acronym Description

CW Continuous Wave
EDGE Enhanced Data rates for GSM Evolution
GSM Global System for Mobile communications
HF High Frequency
LDMOS Laterally Diffused Metal-Oxide Semiconductor
LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor
RF Radio Frequency
TTF Time To Failure
VSWR Voltage Standing-Wave Ratio

11. Revision history

BLF578

Power LDMOS transistor

Table 11. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLF578_2 20100204 Product data sheet - BLF578_1
Modifications: • Table 1 on page 1: added information for CW performance.

• Section 1 on page 1: changed typical value of η

• Table 4 on page 2: changed maximum value of I

• Table 5 on page 3: changed value of R

th(j-c)

• Table 5 on page 3: added information about Z

.

D

.

D

.

.

th(j-c)

• Figure 1 on page 3: added figure.

• Table 6 on page 3: added values vor V

• Table 6 on page 3: changed typical value of I

GSq

.

.

DSX

• Table 7 on page 4: changed some values.

• Section 8.2.1 on page 6: changed some graphs.

BLF578_1 20081211 Objective data sheet - -

BLF578_2 © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 02 — 4 February 2010 11 of 14

NXP Semiconductors

BLF578

Power LDMOS transistor

12. Legal information

12.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this docu ment may have changed si nce this docum ent was pub lished and may dif fer in case of multiple devices. The latest product statu s

information is available on the Internet at URL

[1][2]

Product status

http://www.nxp.com.

[3]

Definition

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied u pon to co nt ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.

12.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.

In no event shall NXP Semiconductors be lia ble for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonabl y be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

NXP Semiconductors does not accept any liability related to any default ,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
customer(s) (hereinafter both referred t o as “Application”). It is customer’s
sole responsibility to check whether the NXP Semiconductors product is
suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and the
product. NXP Semiconductors does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell product s that is ope n for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.

Non-automotive qualified products — Unless the data sheet of an NXP
Semiconductors product expressly states that the product is automotive
qualified, the product is not suitable for automotive use. It is neither qualified
nor tested in accordance with automoti ve t esting or app licat ion requi rements.
NXP Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and st andards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the

http://www.nxp.com/profile/terms, unless otherwise

60134) will cause permanent

BLF578_2 © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 02 — 4 February 2010 12 of 14

NXP Semiconductors

BLF578

Power LDMOS transistor

product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed produ ct claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.

12.4 Trademarks

Notice: All referenced brands, prod uct names, service names and trad emarks
are the property of their respective owners.

13. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

BLF578_2 © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 02 — 4 February 2010 13 of 14

NXP Semiconductors

14. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6.1 Ruggedness in class-AB operation . . . . . . . . . 4

7 Application information. . . . . . . . . . . . . . . . . . . 5

7.1 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6

8.1 Impedance information . . . . . . . . . . . . . . . . . . . 6

8.2 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 6

8.2.1 1-Tone CW pulsed . . . . . . . . . . . . . . . . . . . . . . 6

8.3 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13 Contact information. . . . . . . . . . . . . . . . . . . . . 13

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

BLF578

Power LDMOS transistor

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2010. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

Date of release: 4 February 2010

Document identifier: BLF578_2