Philips blf574 Datasheet

BLF574

HF / VHF power LDMOS transistor

Rev. 02 — 24 February 2009 Product data sheet

1. Product profile

1.1 General description

A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial
applications in the HF to 500 MHz band.

Table 1. Application information

Mode of operation f V

CW 225 50 500 26.5 70

CAUTION

DS

(MHz) (V) (W) (dB) (%)

108 50 600 27.5 73

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.

P

L

G

p

η

D

1.2 Features

n Typical CW performance at frequency of 225 MHz, asupply voltage of 50 V and an I

of 1000 mA:

u Average output power = 500 W
u Power gain = 26.5 dB

u Efficiency = 70 %
n Easy power control
n Integrated ESD protection
n Excellent ruggedness
n High efficiency
n Excellent thermal stability
n Designed for broadband operation (10 MHz to 500 MHz)
n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

n Industrial, scientific and medical applications
n Broadcast transmitter applications

Dq

NXP Semiconductors

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 drain1
2 drain2
3 gate1
4 gate2
5 source

[1] Connected to flange.

3. Ordering information

Table 3. Ordering information

Type number Package

BLF574 - flanged balanced LDMOST ceramic package;

BLF574

HF / VHF power LDMOS transistor

3
4

1

5

2

sym117

SOT539A

12

5

43

[1]

Name Description Version

2 mounting holes; 4 leads

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

GS

I

D

T

stg

T

j

drain-source voltage - 110 V
gate-source voltage −0.5 +11 V
drain current - 56 A
storage temperature −65 +150 °C
junction temperature - 225 °C

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Unit

R

th(j-c)

[1] R

thermal resistance from
junction to case

is measured under RF conditions.

th(j-c)

T

=80°C; PL= 400 W 0.23 K/W

case

BLF574_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 24 February 2009 2 of 18

NXP Semiconductors

6. Characteristics

Table 6. DC characteristics

Tj = 25°C; per section unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V

(BR)DSS

V

GS(th)

V

GSq

I

DSS

I

DSX

I

GSS

g

fs

R

DS(on)

C

rs

C

iss

C

oss

BLF574

HF / VHF power LDMOS transistor

drain-source breakdown voltage VGS=0V; ID= 2.5 mA 110 - - V
gate-source threshold voltage VDS= 10 V; ID= 250 mA 1.25 1.7 2.25 V
gate-source quiescent voltage VDS= 50 V; ID= 500 mA 1.35 1.85 2.35 V
drain leakage current VGS=0V; VDS=50V - - 2.8 µA
drain cut-off current VGS=V

V

=10V

DS

gate leakage current VGS=11V; VDS= 0 V - - 280 nA
forward transconductance VDS=10V; ID= 12.5 A - 17 - S
drain-source on-state resistance VGS=V

I

= 8.33 A

D

feedback capacitance VGS=0V; VDS=50V;

f=1MHz

input capacitance VGS=0V; VDS=50V;

f=1MHz

output capacitance VGS=0V; VDS=50V;

f=1MHz

GS(th)

GS(th)

+ 3.75 V;

+ 3.75 V;

29 37.5 - A

- 0.14 - Ω

- 1.5 - pF

- 204 - pF

-72-pF

Table 7. RF characteristics

Mode of operation: CW; f = 225 MHz;RF performanceat VDS=50V;IDq= 1000 mA fortotaldevice;
T

=25°C; unless otherwise specified; in a class-AB production test circuit.

case

Symbol Parameter Conditions Min Typ Max Unit

G
RL

η

p

D

power gain PL = 400 W 25 26.5 28 dB
input return loss PL = 400 W 13 20 - dB

in

drain efficiency PL = 400 W 66 70 - %

BLF574_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 24 February 2009 3 of 18

NXP Semiconductors

BLF574

HF / VHF power LDMOS transistor

500

C

oss

(pF)

400

300

200

100

0

VGS = 0 V; f = 1 MHz.

0504020 3010

001aaj126

VDS (V)

Fig 1. Output capacitance as a function of drain-source voltage; typical values per

section

6.1 Ruggedness in class-AB operation

The BLF574 is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1
through all phases under the following conditions: VDS= 50 V; IDq= 1000 mA;
PL= 400 W; f = 225 MHz.

BLF574_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 24 February 2009 4 of 18

NXP Semiconductors

7. Application information

7.1 RF performance

RF performance in a 500 W application circuit at 225 MHz.

7.1.1 1-Tone CW

BLF574

HF / VHF power LDMOS transistor

P

L(PEP)

001aaj127

(W)

80

η

D

(%)

60

40

20

0

30

G

p

(dB)

28

26

24

22

0 600400200

η

D

G

p

VDS = 50 V; IDq= 1000 mA; f = 225 MHz. VDS = 50 V; f = 225 MHz.

Fig 2. Powergainanddrain efficiency as functions of

load power; typical values

001aaj128

PL (W)

G

(dB)

30

p

28

26

24

22

0 500400200 300100

(7)
(6)
(5)

(4)
(3)
(2)
(1)

(1) IDq = 400 mA
(2) IDq = 600 mA
(3) IDq = 800 mA
(4) IDq = 1000 mA
(5) IDq = 1200 mA
(6) IDq = 1400 mA
(7) IDq = 1800 mA

Fig 3. Power gain as function of load power; typical

values

BLF574_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 24 February 2009 5 of 18

NXP Semiconductors

BLF574

HF / VHF power LDMOS transistor

G

(dB)

001aaj129

(1)

L

P

L

Ps (dBm)

P

L

(dBm)

60

58

56

54

52

50

24 343228 3026

Ideal P

VDS = 50 V; IDq= 1000 mA; f = 225 MHz.

(1) P

= 57.32 dBm (540 W)

L(1dB)

Fig 4. Load power as function of source power; typical values

7.1.2 2-Tone CW

30

p

28

001aaj130

η

D

80

η

D

(%)

60

IMD3
(dBc)

−20

0

(1)
(2)
(3)

001aaj131

G

P

L(PEP)

p

40

20

0

(W)

−40

−60

−80

0 800600200 400

(4)
(5)

P

(W)

L(PEP)

VDS = 50 V; f1 = 224.95 MHz; f2= 225.05 MHz.

(1) IDq = 600 mA

26

24

22

0 800400200 600

VDS = 50 V; IDq= 1000 mA; f1 = 224.95 MHz;
f2= 225.05 MHz.

(2) IDq = 800 mA
(3) IDq = 1000 mA
(4) IDq = 1200 mA
(5) IDq = 1400 mA

Fig 5. Powergainanddrain efficiency as functions of

peak envelope load power; typical values

Fig 6. Third order intermodulation distortion as a

function of peak envelope load power; typical
values

BLF574_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 24 February 2009 6 of 18

NXP Semiconductors

7.1.3 Application circuit

Table 8. List of components

For application circuit, see Figure 7.
Printed-Circuit Board (PCB): Rogers 5880;
metallization); thickness copper plating = 35

Component Description Value Remarks

C1, C2,
C23, C24

C3 multilayer ceramic chip capacitor 24 pF
C4, C5 multilayer ceramic chip capacitor 39 pF
C6, C9 multilayer ceramic chip capacitor 4.7 µF TDK4532X7R1E475Mt020U
C7, C8,

C10, C11
C12, C16 electrolytic capacitor 220 µF; 63 V
C13, C15 multilayer ceramic chip capacitor 62 pF
C14 multilayer ceramic chip capacitor 15 pF
C17, C19 multilayer ceramic chip capacitor 47 pF
C18 multilayer ceramic chip capacitor 33 pF
C20, C22 multilayer ceramic chip capacitor 10 pF
C21 multilayer ceramic chip capacitor 18 pF
L1, L2,

L3, L4
L5, L6 stripline - (L × W) 125 mm × 7mm
L7, L8,

L9, L10
L11, L12 stripline - (L × W) 132 mm × 7mm
R1, R2 metal film resistor 10 Ω; 0.6 W
R3, R4 metal film resistor 3 Ω; 0.6 W
T1, T2,

T3, T4

BLF574

HF / VHF power LDMOS transistor

ε

= 2.2 F/m; height = 0.79 mm; Cu (top/bottom

r

µ

m.

multilayer ceramic chip capacitor 100 pF

multilayer ceramic chip capacitor 1 nF

3 turns 1 mm copper wire D = 3 mm;

length = 3 mm

stripline - (L × W) 8 mm × 15 mm

semi rigid coax 50 Ω; 120 mm EZ-141-AL-TP-M17

[1]

[1]
[1]

[1]

[1]
[1]
[1]
[1]
[1]
[1]

[1] American Technical Ceramics type 100B or capacitor of same quality.

BLF574_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 24 February 2009 7 of 18

NXP Semiconductors

T1 C6

C1

C2

C4 C5C3

L6

L5

T2

Fig 7. Component layout for class-AB application circuit

C7

R1

L8

L7

R2

C8
C9

C10

C11

L2

L9

L10

L3

R3

C12

C13

C14

C15

C16

BLF574

HF / VHF power LDMOS transistor

L1

+

C17

C19

C20
C21

C22

L11

L12

C18

+

R4
L4

T3

C23

C24

T4

001aaj132

BLF574_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 24 February 2009 8 of 18

NXP Semiconductors

7.2 Reliability

BLF574

HF / VHF power LDMOS transistor

5

10

Years

4

10

3

10

2

10

10

1

0 20168124

(7) (8) (9) (10) (11)

(1) (2) (3) (4) (5) (6)

TTF (0.1 % failure fraction).
(1) Tj = 100 °C
(2) Tj = 110 °C
(3) Tj = 120 °C
(4) Tj = 130 °C
(5) Tj = 140 °C
(6) Tj = 150 °C
(7) Tj = 160 °C
(8) Tj = 170 °C
(9) Tj = 180 °C

(10) Tj = 190 °C
(11) Tj = 200 °C

Fig 8. BLF574 electromigration (ID, total device)

I

(A)

dc

001aaj133

BLF574_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 24 February 2009 9 of 18

NXP Semiconductors

8. Test information

8.1 Impedance information

Table 9. Typical impedance

Simulated ZS and ZL test circuit impedances.

f Z
MHz Ω Ω

225 3.2 + j2.5 7.5 + j4.0

BLF574

HF / VHF power LDMOS transistor

S

drain

Z

L

gate

Z

S

001aaf059

Z

L

Fig 9. Definition of transistor impedance

BLF574_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 24 February 2009 10 of 18

NXP Semiconductors

8.2 RF performance

The following figures are measured in a class-AB production test circuit.

8.2.1 1-Tone CW

BLF574

HF / VHF power LDMOS transistor

001aaj134

D

p

PL (W)

80

η

D

(%)

60

40

20

0

G

(dB)

30

p

28

26

24

22

η

G

0 500400200 300100

VDS = 50 V; IDq= 1000 mA; f = 225 MHz. VDS = 50 V; f = 225 MHz.

Fig 10. Powergainand drain efficiency as functions of

load power; typical values

001aaj135

PL (W)

G

(dB)

30

p

28

26

24

22

0 500400200 300100

(7)
(6)
(5)

(4)
(3)
(2)
(1)

(1) IDq = 400 mA
(2) IDq = 600 mA
(3) IDq = 800 mA
(4) IDq = 1000 mA
(5) IDq = 1200 mA
(6) IDq = 1400 mA
(7) IDq = 1800 mA

Fig 11. Power gain as function of load power; typical

values

BLF574_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 24 February 2009 11 of 18

NXP Semiconductors

BLF574

HF / VHF power LDMOS transistor

G

(dB)

001aaj136

L

(1)

L

Ps (dBm)

P

L

(dBm)

60

58

56

54

52

50

24 343228 3026

ideal P

P

VDS = 50 V; IDq= 1000 mA; f = 225 MHz.
(1) P

= 56.43 dBm (440 W)

L(1dB)

Fig 12. Load power as function of source power; typical values

8.2.2 2-Tone CW

30

p

28

001aaj137

η

D

80

η

D

(%)

60

IMD3
(dBc)

−20

0

(1)
(2)
(3)

001aaj138

G

26

24

22

0 600400200 500300100

p

P

L(PEP)

VDS = 50 V; IDq= 1000 mA; f1 = 224.95 MHz;
f2= 225.05 MHz.

(W)

40

20

0

−40

−60

−80

0 600400200 500300100

(4)
(5)

P

(W)

L(PEP)

VDS = 50 V; f1 = 224.95 MHz; f2= 225.05 MHz.
(1) IDq = 600 mA
(2) IDq = 800 mA
(3) IDq = 1000 mA
(4) IDq = 1200 mA
(5) IDq = 1400 mA

Fig 13. Powergainand drain efficiency as functions of

peak envelope load power; typical values

Fig 14. Third order intermodulation distortion as a

function of peak envelope load power; typical

values

BLF574_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 24 February 2009 12 of 18

NXP Semiconductors

8.2.3 Test circuit

Table 10. List of components

For production test circuit, see Figure 15 and Figure 16.
Printed-Circuit Board (PCB): Rogers 5880;
metallization); thickness copper plating = 35

Component Description Value Remarks

C1, C2,
C20, C21

C3 multilayer ceramic chip capacitor 24 pF
C4, C5 multilayer ceramic chip capacitor 39 pF
C6, C7,

C10, C11
C8, C9 multilayer ceramic chip capacitor 4.7 µF
C12, C13 electrolytic capacitor 220 µF; 63 V
C14, C15 multilayer ceramic chip capacitor 47 pF
C16 multilayer ceramic chip capacitor 33 pF
C17 multilayer ceramic chip capacitor 18 pF
C18, C19 multilayer ceramic chip capacitor 10 pF
C22 multilayer ceramic chip capacitor 15 pF
C23, C24 multilayer ceramic chip capacitor 62 pF
L1, L2,

L3, L4
L5, L6 stripline - (L × W) 125 mm × 7mm
L7, L8,

L9, L10
L11, L12 stripline - (L × W) 132 mm × 7mm
R1, R2 metal film resistor 10 Ω; 0.6 W
R3, R4 metal film resistor 3 Ω; 0.6 W
T1, T2,

T3, T4

BLF574

HF / VHF power LDMOS transistor

ε

= 2.2 F/m; height = 0.79 mm; Cu (top/bottom

r

µ

m.

multilayer ceramic chip capacitor 100 pF

multilayer ceramic chip capacitor 1 nF

3 turns 1 mm copper wire D = 3 mm;

length = 2 mm

stripline - (L × W) 8 mm × 15 mm

semi rigid coax 50 Ω; 120 mm EZ-141-AL-TP-M17

[1]

[1]
[1]
[1]

[1]

TDK4532X7R1E475Mt020U

[1]
[1]
[1]
[1]
[1]
[1]

[1] American Technical Ceramics type 100B or capacitor of same quality.

BLF574_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 24 February 2009 13 of 18

NXP Semiconductors

BLF574

HF / VHF power LDMOS transistor

V

DD

C12

V

GG

C8

R3

L3

C7

R2

T1

C1

input
50 Ω

T2

C3

C2

C4 C5 C22

L6L5L8

C6

C9

V

L7

R1

L4

GG

Fig 15. Class-AB common-source production test circuit

C11

L1

L11
L12

C14

C16 C17

C15

C23

L9

L10

C24

L2

C10

L4

C13

V

DD

C18

C19

C20

C21

T3

T4

001aaj139

output

50 Ω

L3

R3

T1 C8

C1

11 mm

C2

C4 C5C3

37 mm

T2

L1

11 mm

L2

C11

C10

C12

C15

C16

3 mm

C14

C18
C17

5 mm

C19

C23

C22

C24

R4

C13

L4

C7

R2

R1
C6
C9

T3

C20

C21

T4

001aaj140

Fig 16. Component layout for class-AB production test circuit

BLF574_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 24 February 2009 14 of 18

NXP Semiconductors

BLF574

HF / VHF power LDMOS transistor

9. Package outline

Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A

D

A

D

1

U

1

q

H

1

w

M M

2

F

B

C

C

c

12

H

U

2

L

A

e

43

b

0 5 10 mm

scale

p

5

w

M

3

w

M M M

1

AB

E

1

Q

E

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

inches

A

5.33

3.96

0.210

0.156

OUTLINE
VERSION

SOT539A

11.81

11.56

0.465

0.455

c

0.15

0.08

0.006

0.003

D

Db

1

31.52

31.55

30.96

30.94

1.242

1.241

1.218

1.219

IEC JEDEC EIAJ

EE

e U

9.50

13.72

0.540

9.53

9.30

9.27

0.375

0.374

0.365

0.366

REFERENCES

F

1

1.75

1.50

0.069

0.059

H

17.12

16.10

0.674

0.634

H

25.53

25.27

1.005

0.995

p

L

1

3.30

3.73

3.05

2.72

0.130

0.147

0.120

0.107

qw

Q

2.31

2.01

0.091

0.079

U

41.28

35.56

41.02

1.625

1.615

EUROPEAN

PROJECTION

1

2

10.29

10.03

0.405

0.395

w

1

ISSUE DATE

99-12-28
00-03-03

w

3

2

0.250.25 0.51

0.0100.010 0.0201.400

Fig 17. Package outline SOT539A

BLF574_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 24 February 2009 15 of 18

NXP Semiconductors

10. Abbreviations

Table 11. Abbreviations

Acronym Description

CW Continuous Wave
EDGE Enhanced Data rates for GSM Evolution
GSM Global System for Mobile communications
HF High Frequency
LDMOS Laterally Diffused Metal-Oxide Semiconductor
LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor
RF Radio Frequency
TTF Time To Failure
VHF Very High Frequency
VSWR Voltage Standing-Wave Ratio

11. Revision history

BLF574

HF / VHF power LDMOS transistor

Table 12. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLF574_2 20090224 Product data sheet - BLF574_1
Modifications:
BLF574_1 20081208 Preliminary data sheet - -

• Data sheet status updated from Preliminary to Product

BLF574_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 24 February 2009 16 of 18

NXP Semiconductors

12. Legal information

12.1 Data sheet status

BLF574

HF / VHF power LDMOS transistor

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product statusof device(s) describedin this documentmay have changed since this documentwas published andmay differin case of multiple devices. Thelatest product status

information is available on the Internet at URL

[1][2]

Product status

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information includedhereinand shall havenoliability for the consequencesof
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with thesameproduct type number(s) andtitle.A short data sheet isintended
for quickreference only and should not be relied upon tocontaindetailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors doesnotgive any representations or
warranties, expressedor implied, as to the accuracy orcompletenessof such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedesandreplaces all information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental

[3]

http://www.nxp.com.

Definition

damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute MaximumRatingsSystem of IEC 60134) may cause permanent
damage to thedevice. Limiting values arestressratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights,patents
or other industrial or intellectual property rights.

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.

12.4 Trademarks

Notice: Allreferenced brands, productnames,service names and trademarks
are the property of their respective owners.

13. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

BLF574_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 24 February 2009 17 of 18

NXP Semiconductors

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6.1 Ruggedness in class-AB operation. . . . . . . . . . 4

7 Application information. . . . . . . . . . . . . . . . . . . 5

7.1 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 5

7.1.1 1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

7.1.2 2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

7.1.3 Application circuit . . . . . . . . . . . . . . . . . . . . . . . 7

7.2 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . 10

8.1 Impedance information . . . . . . . . . . . . . . . . . . 10

8.2 RF performance . . . . . . . . . . . . . . . . . . . . . . . 11

8.2.1 1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

8.2.2 2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

8.2.3 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 16

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 16

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 17

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17

13 Contact information. . . . . . . . . . . . . . . . . . . . . 17

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

BLF574

HF / VHF power LDMOS transistor

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2009. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

Date of release: 24 February 2009

Document identifier: BLF574_2