Philips blf573s Datasheet

BLF573S

HF / VHF power LDMOS transistor

Rev. 02 — 17 February 2009 Product data sheet

1. Product profile

1.1 General description

A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific
and medical applications in the HF to 500 MHz band.

Table 1. Production test information

Mode of operation f V

CW 225 50 300 27.2 70

CAUTION

DS

(MHz) (V) (W) (dB) (%)

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.

P

L

G

p

η

D

1.2 Features

n Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an

IDqof 900 mA:

u Average output power = 300 W
u Power gain = 27.2 dB

u Efficiency = 70 %
n Easy power control
n Integrated ESD protection
n Excellent ruggedness
n High efficiency
n Excellent thermal stability
n Designed for broadband operation (HF and VHF band)
n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

n Industrial, scientific and medical applications
n Broadcast transmitter applications

NXP Semiconductors

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 drain
2 gate
3 source

[1] Connected to flange.

3. Ordering information

Table 3. Ordering information

Type number Package

BLF573S - earless flanged LDMOST ceramic package, 2 leads SOT502B

BLF573S

HF / VHF power LDMOS transistor

1

[1]

3

2

Name Description Version

2

sym112

1

3

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

GS

I

D

T

stg

T

j

drain-source voltage - 110 V
gate-source voltage −0.5 +11 V
drain current - 42 A
storage temperature −65 +150 °C
junction temperature - 225 °C

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Unit

R

th(j-c)

[1] R

thermal resistance from
junction to case

is measured under RF conditions.

th(j-c)

T

=80°C; PL= 300 W

case

[1]

0.21 K/W

BLF573S_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 17 February 2009 2 of 14

NXP Semiconductors

6. Characteristics

Table 6. DC characteristics

Tj = 25°C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V

(BR)DSS

V

GS(th)

V

GSq

I

DSS

I

DSX

I

GSS

g

fs

R

DS(on)

C

rs

C

iss

C

oss

BLF573S

HF / VHF power LDMOS transistor

drain-source breakdown voltage VGS=0V; ID= 3.75 mA 110 - - V
gate-source threshold voltage VDS= 10 V; ID= 375 mA 1.25 1.7 2.25 V
gate-source quiescent voltage VDS= 50 V; ID= 900 mA 1.45 1.95 2.45 V
drain leakage current VGS=0V; VDS= 50 V - - 4.2 µA
drain cut-off current VGS=V

V

=10V

DS

gate leakage current VGS=11V; VDS= 0 V - - 420 nA
forward transconductance VDS= 10 V; ID= 18.75 A - 20 - S
drain-source on-state

resistance

VGS=V
I

= 12.49 A

D

feedback capacitance VGS=0V; VDS=50V;

f=1MHz

input capacitance VGS=0V; VDS=50V;

f=1MHz

output capacitance VGS=0V; VDS=50V;

f=1MHz

GS(th)

GS(th)

+ 3.75 V;

+ 3.75 V;

44 56 - A

- 0.09 - Ω

- 2.3 - pF

- 300 - pF

- 103 - pF

Table 7. RF characteristics

Mode of operation: CW; f = 225 MHz; RF performance at VDS= 50 V; IDq= 900 mA; T

case

=25°C;

unless otherwise specified; in a class-AB production test circuit.

Symbol Parameter Conditions Min Typ Max Unit

G
RL

η

p

D

power gain PL = 300 W 26 27.2 28.4 dB
input return loss PL = 300 W 10 13 - dB

in

drain efficiency PL = 300 W 67 70 - %

BLF573S_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 17 February 2009 3 of 14

NXP Semiconductors

BLF573S

HF / VHF power LDMOS transistor

800

C

oss

(pF)

600

400

200

0

VGS = 0 V; f = 1 MHz.

0504020 3010

001aaj141

VDS (V)

Fig 1. Output capacitance as a function of drain-source voltage; capacitance value

without internal matching

6.1 Ruggedness in class-AB operation

The BLF573S is capable of withstanding a load mismatch corresponding to
VSWR = 13 : 1 through all phases under the following conditions: VDS=50V;
IDq= 900 mA; PL= 300 W; f = 225 MHz.

7. Application information

7.1 Impedance information

Table 8. Typical impedance

Measured ZS and ZL test circuit impedances.

f Z
MHz Ω Ω

225 0.7 + j2.0 1.95 + j2.0

Fig 2. Definition of transistor impedance

S

drain

Z

L

gate

Z

S

001aaf059

Z

L

BLF573S_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 17 February 2009 4 of 14

NXP Semiconductors

7.2 Reliability

BLF573S

HF / VHF power LDMOS transistor

5

10

Years

4

10

3

10

2

10

10

1

0 20168124

(1) (2) (3) (4) (5) (6)

(7) (8) (9) (10)

(11)

TTF (0.1 % failure fraction).
(1) Tj = 100 °C
(2) Tj = 110 °C
(3) Tj = 120 °C
(4) Tj = 130 °C
(5) Tj = 140 °C
(6) Tj = 150 °C
(7) Tj = 160 °C
(8) Tj = 170 °C
(9) Tj = 180 °C

(10) Tj = 190 °C
(11) Tj = 200 °C

Fig 3. BLF573S electromigration (ID, total device)

I

(A)

dc

001aaj142

BLF573S_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 17 February 2009 5 of 14

NXP Semiconductors

8. Test information

8.1 RF Performance

The following figures are measured in a class-AB production test circuit.

8.1.1 1-Tone CW

BLF573S

HF / VHF power LDMOS transistor

30

G

p

(dB)

28

26

24

22

G

p

η

D

0 400300100 200

001aaj612

PL (W)

80

η

D

(%)

60

40

20

0

VDS = 50 V; IDq= 900 mA; f = 225 MHz. VDS = 50 V; f = 225 MHz.

Fig 4. Powergainanddrainefficiencyasfunctionsof

load power; typical values

30

G

p

(dB)

28

26

24

22

0 400300100 200

(7)
(6)
(5)

(1)
(2)
(3)
(4)

001aaj613

PL (W)

(1) IDq = 500 mA
(2) IDq = 700 mA
(3) IDq = 900 mA
(4) IDq = 1100 mA
(5) IDq = 1300 mA
(6) IDq = 1500 mA
(7) IDq = 1700 mA

Fig 5. Power gain as function of load power; typical

values

BLF573S_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 17 February 2009 6 of 14

NXP Semiconductors

BLF573S

HF / VHF power LDMOS transistor

60

P

L

(dBm)

58

56

54

52

50

24 343228 3026

Ideal P

(1)

L

P

L

VDS = 50 V; IDq= 900 mA; f = 225 MHz.
(1) P
(2) P

= 55.2 dBm (330 W)

L(1dB)

= 55.8 dBm (380 W)

L(3dB)

Fig 6. Load power as function of input power; typical values

001aaj614

(2)

Pi (dBm)

BLF573S_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 17 February 2009 7 of 14

NXP Semiconductors

8.1.2 2-Tone CW

BLF573S

HF / VHF power LDMOS transistor

001aaj615

P

L(PEP)

(W)

80

η

D

(%)

60

40

20

0

G

(dB)

30

p

28

26

24

22

0 500400200 300100

G

p

η

D

VDS = 50 V; IDq= 900 mA; f1 = 224.95 MHz;

f2= 225.05 MHz.

Fig 7. Powergainanddrainefficiencyasfunctionsof

peak envelope load power; typical values

001aaj616

P

L(PEP)

(W)

IMD3
(dBc)

−20

−40

−60

−80

0

0 500400200 300100

(1)
(2)

(8)
(7)
(6)

(3)
(4)
(5)

VDS = 50 V; f1 = 224.95 MHz; f2= 225.05 MHz.
(1) IDq = 500 mA
(2) IDq = 700 mA
(3) IDq = 900 mA
(4) IDq = 1100 mA
(5) IDq = 1300 mA
(6) IDq = 1500 mA
(7) IDq = 1700 mA
(8) IDq = 1800 mA

Fig 8. Third order intermodulation distortion as a

function of peak envelope load power; typical

values

8.2 Test circuit

Table 9. List of components

For production test circuit, see Figure 9 and Figure 10.
Printed-Circuit Board (PCB): Rogers 5880;
thickness copper plating = 35

µ

m.

Component Description Value Remarks

B1 ferrite SMD bead 100 Ω; 100 MHz Ferroxcube BDS3/3/8.9-4S2 or equivalent
C1, C18 multilayer ceramic chip capacitor 100 pF
C2 multilayer ceramic chip capacitor 39 pF
C3, C4 multilayer ceramic chip capacitor 180 pF
C5, C6, C7 multilayer ceramic chip capacitor 220 pF
C8, C20 multilayer ceramic chip capacitor 1 nF
C9 multilayer ceramic chip capacitor 4.7 µF TDK C4532X7R1E475MT020U or equivalent
C10 multilayer ceramic chip capacitor 30 pF
C11, C12, C13 multilayer ceramic chip capacitor 51 pF
C14 multilayer ceramic chip capacitor 43 pF

BLF573S_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 17 February 2009 8 of 14

ε

= 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization);

r

[1]
[1]
[1]
[1]
[1]

[1]
[1]
[1]

NXP Semiconductors

BLF573S

HF / VHF power LDMOS transistor

Table 9. List of components

…continued

For production test circuit, see Figure 9 and Figure 10.
Printed-Circuit Board (PCB): Rogers 5880;
thickness copper plating = 35

µ

m.

ε

= 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization);

r

Component Description Value Remarks

C15 multilayer ceramic chip capacitor 33 pF
C16 multilayer ceramic chip capacitor 36 pF
C17 multilayer ceramic chip capacitor 16 pF

[1]
[1]
[1]

C19 electrolytic capacitor 220 µF; 63 V
L1 2 turns enamelled copper wire D = 3 mm;

d = 1 mm;
length = 2 mm;
leads = 2 × 6mm

L2 4 turns enamelled copper wire D = 2 mm;

d = 1 mm;
length = 13 mm;

leads = 2 × 5mm
L3 stripline - (L × W) 96 mm × 3mm
L4, L5 stripline - (L × W) 15 mm × 8mm
L6 stripline - (L × W) 105 mm × 6mm
L7 stripline - (L × W)3mm× 6mm
L8 stripline - (L × W) 12 mm × 6mm
R1 metal film resistor 100 Ω; 0.6 W

[1] American Technical Ceramics type 100B or capacitor of same quality.

V

DD

V

GG

C9

C8

R1 L1

input
50 Ω

C1

L3

C2

C7

C3

L5L4

C4

C5 C6

Fig 9. Class-AB common-source production test circuit

C19

B1

C20

C13 C14

L6

C10

C11 C12

C15

L2

C16

C17

C18

001aaj148

output

50 Ω

L7

L8

BLF573S_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 17 February 2009 9 of 14

NXP Semiconductors

C9
C8

C3

C1

C2

C4

Fig 10. Component layout for class-AB production test circuit

C7

R1

C6C5

BLF573S

HF / VHF power LDMOS transistor

B1

C19

C20

C13

L1

C10

C14

C11 C12

C15

L2

C18

C17

C16

001aaj149

BLF573S_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 17 February 2009 10 of 14

NXP Semiconductors

BLF573S

HF / VHF power LDMOS transistor

9. Package outline

Earless flanged LDMOST ceramic package; 2 leads SOT502B

D

A

F

3

D

1

U

1

L

H

U

2

1

D

c

E

1

E

2

b

w

M M

D

2

0 5 10 mm

scale

Q

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

inches

A

4.72

3.43

0.186

0.135

OUTLINE
VERSION

SOT502B

12.83

12.57

0.505

0.495

c

0.15

0.08

0.006

0.003

IEC JEDEC JEITA

Db

20.02

19.61

0.788

0.772

D

19.96

19.66

0.786

0.774

1

0.374

0.366

EE

1

9.53

9.50

9.25

9.30

0.375

0.364

REFERENCES

F

1.14

0.89

0.045

0.035

H

19.94

18.92

0.785

0.745

L

5.33

4.32

0.210

0.170

Q

1.70

1.45

0.067

0.057

U

20.70

20.45

0.815

0.805

U

w

2

1

9.91

9.65

0.390

0.380

2

0.25

0.010

EUROPEAN

PROJECTION

ISSUE DATE

03-01-10
07-05-09

Fig 11. Package outline SOT502B

BLF573S_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 17 February 2009 11 of 14

NXP Semiconductors

10. Abbreviations

Table 10. Abbreviations

Acronym Description

CW Continuous Wave
EDGE Enhanced Data rates for GSM Evolution
GSM Global System for Mobile communications
HF High Frequency
LDMOS Laterally Diffused Metal-Oxide Semiconductor
LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor
RF Radio Frequency
SMD Surface Mount Device
TTF Time To Failure
VHF Very High Frequency
VSWR Voltage Standing-Wave Ratio

BLF573S

HF / VHF power LDMOS transistor

11. Revision history

Table 11. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLF573S_2 20090217 Product data sheet - BLF573S_1
Modifications:

BLF573S_1 20081208 Preliminary data sheet - -

• Table 1 on page 1: changed the value for G

p

• Section 1.2 on page 1: changed the value for G

• Table 7 on page 3: changed the values for G

p

• Section 8.1 on page 6: changed the graphs

p

BLF573S_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 17 February 2009 12 of 14

NXP Semiconductors

12. Legal information

12.1 Data sheet status

BLF573S

HF / VHF power LDMOS transistor

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s)described in thisdocument mayhave changed since this documentwas published andmay differin case of multiple devices. The latestproduct status

information is available on the Internet at URL

[1][2]

Product status

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information includedherein and shall have no liabilityfor the consequencesof
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with thesame product type number(s)and title. Ashort data sheetis intended
for quickreference only and shouldnotbe relied upon to containdetailedand
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXPSemiconductors does not give anyrepresentations or
warranties, expressed or implied, as tothe accuracy or completeness ofsuch
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right tomake
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. Thisdocumentsupersedes and replaces all informationsuppliedprior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental

[3]

http://www.nxp.com.

Definition

damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute MaximumRatings System of IEC 60134)may cause permanent
damage tothedevice. Limiting valuesare stress ratings onlyand operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions ofcommercialsale, as published
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of anylicense under any copyrights, patents
or other industrial or intellectual property rights.

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.

12.4 Trademarks

Notice: Allreferenced brands,productnames, service namesand trademarks
are the property of their respective owners.

13. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

BLF573S_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 17 February 2009 13 of 14

NXP Semiconductors

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6.1 Ruggedness in class-AB operation. . . . . . . . . . 4

7 Application information. . . . . . . . . . . . . . . . . . . 4

7.1 Impedance information . . . . . . . . . . . . . . . . . . . 4

7.2 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6

8.1 RF Performance . . . . . . . . . . . . . . . . . . . . . . . . 6

8.1.1 1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

8.1.2 2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

8.2 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 12

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13 Contact information. . . . . . . . . . . . . . . . . . . . . 13

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

BLF573S

HF / VHF power LDMOS transistor

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2009. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

Date of release: 17 February 2009

Document identifier: BLF573S_2