Philips blf573_blf573s Datasheet

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Page 1

BLF573; BLF573S

HF / VHF power LDMOS transistor

Rev. 3 — 8 July 2010 Product data sheet

1. Product profile

1.1 General description

A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.

Table 1. Production test information

Mode of operation f V

CW 225 50 300 27.2 70

CAUTION

(MHz) (V) (W) (dB) (%)

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

1.2 Features and benefits

 Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an

of 900 mA:

 Average output power = 300 W  Power gain = 27.2 dB

 Efficiency = 70 %  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (HF and VHF band)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazard ou s Subs tances

(RoHS)

1.3 Applications

 Industrial, scientific and medical applications  Broadcast transmitter applications

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NXP Semiconductors

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

BLF573 (SOT502A)

1drain 2gate 3source

BLF573S (SOT502B)

1drain 2gate 3source

BLF573; BLF573S

HF / VHF power LDMOS transistor

sym11

[1]

[1] Connected to flange.

3. Ordering information

Table 3. Ordering information

Type number Package

BLF573 - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A BLF573S - earless flanged LDMOST ceramic package, 2 leads SOT502B

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

stg

drain-source voltage - 110 V gate-source voltage −0.5 +11 V drain current - 42 A storage temperature −65 +150 °C junction temperature - 225 °C

Name Description Version

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Unit

th(j-c)

thermal resistance from

=80°C; PL=300W

case

junction to case

[1] R

Product data sheet Rev. 3 — 8 July 2010 2 of 16

is measured under RF conditions.

th(j-c)

[1]

0.21 K/W

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NXP Semiconductors

6. Characteristics

Table 6. DC characteristics

Tj = 25 °C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

(BR)DSS

GS(th)

GSq

DSS

DSX

GSS

DS(on)

iss

oss

BLF573; BLF573S

HF / VHF power LDMOS transistor

drain-source breakdown voltage VGS=0V; ID=3.75mA 110 - - V gate-source threshold voltage VDS=10 V; ID= 375 mA 1.25 1.7 2.25 V gate-source quiescent voltage VDS=50 V; ID= 900 mA 1.45 1.95 2.45 V drain leakage current VGS=0V; VDS=50V - - 4.2 μA drain cut-off current VGS=V

=10V

GS(th)

+3.75 V;

gate leakage current VGS=11V; VDS= 0 V - - 420 nA forward transconductance VDS=10V; ID= 18.75 A - 20 - S drain-source on-state resistance VGS=V

GS(th)

+ 3.75 V;

ID= 12.49 A

feedback capacitance VGS=0V; VDS=50V;

f=1MHz

input capacitance VGS=0V; VDS=50V;

f=1MHz

output capacitance VGS=0V; VDS=50V;

f=1MHz

44 56 - A

-0.09-Ω

-2.3-pF

- 300 - pF

- 103 - pF

Table 7. RF characteristics

Mode of operation: CW; f = 225 MHz; RF performance at V

=50V; IDq=900 mA; T

case

= 25 °C;

unless otherwise specified; in a class-AB production test circuit.

Symbol Parameter Conditions Min Typ Max Unit

G RL

power gain PL = 300 W 26 27.2 28.4 dB input return loss PL = 300 W 10 13 - dB

drain efficiency PL = 300 W 67 70 - %

Product data sheet Rev. 3 — 8 July 2010 3 of 16

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NXP Semiconductors

001aaj141

Fig 1. Output capacitance as a fun ction of drain-source voltage; capacitance value

800

oss

(pF)

600

400

200

0504020 3010

VGS = 0 V; f = 1 MHz.

without internal matching

BLF573; BLF573S

HF / VHF power LDMOS transistor

VDS (V)

6.1 Ruggedness in class-AB operation

The BLF573 and BLF573S are capable o f withsta nding a load mismatch corresponding to VSWR = 13 : 1 through all phases under the following conditions: V I

=900mA; PL= 300 W; f = 225 MHz.

7. Application information

7.1 Impedance information

Table 8. Typical impedance

Measured ZS and ZL test circuit impedances.

f Z MHz Ω Ω

225 0.7 + j2.0 1.95 + j2.0

=50V;

drain

gate

001aaf05

Fig 2. Definition of transistor impedanc e

Product data sheet Rev. 3 — 8 July 2010 4 of 16

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NXP Semiconductors

001aaj142

7.2 Reliability

Years

BLF573; BLF573S

HF / VHF power LDMOS transistor

(1) (2) (3) (4) (5) (6)

0 20168124

(7) (8) (9) (10)

(11)

TTF (0.1 % failure fraction).

= 100 °C

(1) T

= 110 °C

(2) T

= 120 °C

(3) T

= 130 °C

(4) T

= 140 °C

(5) T

= 150 °C

(6) T

= 160 °C

(7) T

= 170 °C

(8) T

= 180 °C

(9) T

= 190 °C

(10) T

= 200 °C

(11) T

Fig 3. BLF573 and BLF573S electromigration (ID, total device)

(A)

Product data sheet Rev. 3 — 8 July 2010 5 of 16

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NXP Semiconductors

001aaj612

001aaj613

8. Test information

8.1 RF Performance

The following figures are measured in a class-AB production test circuit.

8.1.1 1-Tone CW

BLF573; BLF573S

HF / VHF power LDMOS transistor

(dB)

0 400300100 200

PL (W)

(%)

VDS = 50 V; IDq= 900 mA; f = 225 MHz. VDS = 50 V; f = 225 MHz.

Fig 4. Power gain and drain efficiency as functions

of load power; typical values

(dB)

0 400300100 200

= 500 mA

(1) I

= 700 mA

(2) I

= 900 mA

(3) I

= 1100 mA

(4) I

= 1300 mA

(5) I

= 1500 mA

(6) I

= 1700 mA

(7) I

(7) (6) (5)

(1) (2) (3) (4)

PL (W)

Fig 5. Power gain as function of load power; typical

values

Product data sheet Rev. 3 — 8 July 2010 6 of 16

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NXP Semiconductors

BLF573; BLF573S

HF / VHF power LDMOS transistor

(dBm)

24 343228 3026

Ideal P

(1)

VDS = 50 V; IDq= 900 mA; f = 225 MHz. (1) P (2) P

= 55.2 dBm (330 W)

L(1dB)

= 55.8 dBm (380 W)

L(3dB)

Fig 6. Load power as function of input power; typical values

001aaj614

(2)

Pi (dBm)

Product data sheet Rev. 3 — 8 July 2010 7 of 16

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NXP Semiconductors

8.1.2 2-Tone CW

BLF573; BLF573S

HF / VHF power LDMOS transistor

001aaj615

L(PEP)

(W)

(%)

(dB)

0 500400200 300100

VDS = 50 V; IDq= 900 mA; f1 = 224.95 MHz;

= 225.05 MHz.

Fig 7. Power gain and drain efficiency as functions

of peak envelope load power; typical values

001aaj616

L(PEP)

(W)

IMD3 (dBc)

−20

−40

−60

−80

(1) I (2) I (3) I (4) I (5) I (6) I (7) I (8) I

(1) (2)

(8) (7) (6)

0 500400200 300100

= 50 V; f1 = 224.95 MHz; f2= 225.05 MHz.

= 500 mA

= 700 mA

= 900 mA

= 1100 mA

= 1300 mA

= 1500 mA

= 1700 mA

= 1800 mA

(3) (4) (5)

Fig 8. Third order intermodulation distortion as a

function of peak envelope load power; typical values

8.2 Test circuit

Table 9. List of components

For production test circuit, see Figure 9 Printed-Circuit Board (PCB): Rogers 5880; thickness copper plating = 35

Component Description Value Remarks

B1 ferrite SMD bead 100 Ω; 100 MHz Ferroxcube BDS3/3/8.9-4S2 or equivalent C1, C18 multilayer ceramic chip capacitor 100 pF C2 multilayer ceramic chip capacitor 39 pF C3, C4 multilayer ceramic chip capacitor 180 pF C5, C6, C7 multilayer ceramic chip capacitor 220 pF C8, C20 multilayer ceramic chip capacitor 1 nF C9 multilayer ceramic chip capacitor 4.7 μF TDK C4532X7R1E475MT020U or equivalent C10 multilayer ceramic chip capacitor 30 pF C11, C12, C13 multilayer ceramic chip capacitor 51 pF C14 multilayer ceramic chip capacitor 43 pF

Product data sheet Rev. 3 — 8 July 2010 8 of 16

and Figure 10.

= 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization);

[1] [1] [1] [1] [1]

[1] [1] [1]

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NXP Semiconductors

BLF573; BLF573S

HF / VHF power LDMOS transistor

Table 9. List of components

…continued

For production test circuit, see Figure 9 and Figure 10. Printed-Circuit Board (PCB): Rogers 5880;

= 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization);

thickness copper plating = 35μm.

Component Description Value Remarks

C15 multilayer ceramic chip capacitor 33 pF C16 multilayer ceramic chip capacitor 36 pF C17 multilayer ceramic chip capacitor 16 pF

[1] [1] [1]

C19 electrolytic capacitor 220 μF; 63 V L1 2 turns enamel led copper wire D = 3 mm;

d=1mm; length = 2 mm; leads = 2 × 6mm

L2 4 turns enamel led copper wire D = 2 mm;

d=1mm; length = 13 mm;

leads = 2 × 5mm L3 stripline - (L × W) 96 mm × 3mm L4, L5 stripline - (L × W) 15 mm × 8mm L6 stripline - (L × W) 105 mm × 6mm L7 stripline - (L × W) 3 mm × 6mm L8 stripline - (L × W) 12 mm × 6mm R1 metal film resistor 100 Ω; 0.6 W

[1] American Technical Ceramics type 100B or capacitor of same quality.

input 50 Ω

L5L4

C5 C6

Fig 9. Class-AB common-source prod uc tio n tes t ci rc u it

C19

C20

C13 C14

C10

C11 C12

C15

C16

C17

C18

output

50 Ω

001aaj14

Product data sheet Rev. 3 — 8 July 2010 9 of 16

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NXP Semiconductors

C9 C8

Fig 10. Component layout for class-AB production test circuit

C6C5

BLF573; BLF573S

HF / VHF power LDMOS transistor

C19

C20

C13

C14

C11 C12

C10

C15

C18

C17

C16

001aaj14

Product data sheet Rev. 3 — 8 July 2010 10 of 16

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NXP Semiconductors

BLF573; BLF573S

HF / VHF power LDMOS transistor

9. Package outline

Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502

M M

0 5 10 mm

scale

M M M

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

inches

4.72

3.43

0.186

0.135

OUTLINE VERSION

SOT502A

12.83

12.57

0.505

0.495

0.15

0.08

0.006

0.003

IEC JEDEC JEITA

20.02

19.61

0.788

0.772

19.96

19.66

0.786

0.774

9.50

9.53

9.30

9.25

0.374

0.375

0.366

0.364

REFERENCES

0.045

0.035

1.14

0.89

19.94

18.92

0.785

0.745

5.33

4.32

0.210

0.170

3.38

3.12

0.133

0.123

1.70

1.45

0.067

0.057

34.16

33.91

1.345

1.335

EUROPEAN

PROJECTION

9.91

9.65

0.390

0.380

0.25 0.5127.94

0.01 0.021.100

ISSUE DATE

99-12-28 03-01-10

Fig 11. Package outline SOT502A

Product data sheet Rev. 3 — 8 July 2010 11 of 16

Page 12

NXP Semiconductors

BLF573; BLF573S

HF / VHF power LDMOS transistor

Earless flanged LDMOST ceramic package; 2 leads SOT502

0 5 10 mm

scale

M M

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

inches

4.72

3.43

0.186

0.135

OUTLINE

VERSION

SOT502B

12.83

12.57

0.505

0.495

20.02

19.61

0.788

0.772

19.96

19.66

0.786

0.774

0.15

0.08

0.006

0.003

IEC JEDEC JEITA

9.53

9.50

9.25

9.30

0.374

0.375

0.366

0.364

REFERENCES

0.045

0.035

1.14

0.89

19.94

18.92

0.785

0.745

5.33

4.32

0.210

0.170

1.70

1.45

0.067

0.057

20.70

20.45

0.815

0.805

9.91

9.65

0.390

0.380

0.25

0.010

EUROPEAN

PROJECTION

ISSUE DATE

03-01-10 07-05-09

Fig 12. Package outline SOT502B

Product data sheet Rev. 3 — 8 July 2010 12 of 16

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NXP Semiconductors

10. Abbreviations

Table 10. Abbreviations

Acronym Description

CW Continuous Wave EDGE Enhanced Data rates for GSM Evolution GSM Global System for Mobile communications HF High Frequency LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor RF Radio Frequency SMD Surface Mount Device TTF Time To Failure VHF Very High Frequency VSWR Voltage Standing-Wave Ratio

BLF573; BLF573S

HF / VHF power LDMOS transistor

11. Revision history

Table 11. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLF573_BLF573S v.3 20100708 Product data sheet - BLF573S v.2 Modifications:

BLF573S v.2 20090217 Product data sheet - BLF573S v.1 BLF573S v.1 20081208 Preliminary data sheet - -

• The document now describes both the eared and earless version of this product:

BLF573 and BLF573S respectively.

Product data sheet Rev. 3 — 8 July 2010 13 of 16

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NXP Semiconductors

BLF573; BLF573S

HF / VHF power LDMOS transistor

12. Legal information

12.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development . Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Producti on This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this docu ment may have changed si nce this docum ent was pub lished and may dif fer in case of multiple devices. The latest product statu s

information is available on the Internet at URL http://www.nxp.com.

[1][2]

Product status

[3]

Definition

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied u pon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

12.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

In no event shall NXP Semiconductors be lia ble for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonabl y be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.

NXP Semiconductors does not accept any liability related to any default , damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third part y customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell product s that is ope n for accept ance or the gr ant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

, unless otherwise

Product data sheet Rev. 3 — 8 July 2010 14 of 16

Page 15

NXP Semiconductors

BLF573; BLF573S

HF / VHF power LDMOS transistor

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It i s neither qua lif ied nor test ed in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equ ipment or applications.

In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, da mages or failed produ ct cl aims resulting from custome r design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.

12.4 Trademarks

Notice: All referenced brands, prod uct names, service names and trad emarks are the property of their respective owners.

13. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Product data sheet Rev. 3 — 8 July 2010 15 of 16

Page 16

NXP Semiconductors

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . 2

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6.1 Ruggedness in class-AB operation . . . . . . . . . 4

7 Application information. . . . . . . . . . . . . . . . . . . 4

7.1 Impedance information. . . . . . . . . . . . . . . . . . . 4

7.2 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6

8.1 RF Performance. . . . . . . . . . . . . . . . . . . . . . . . 6

8.1.1 1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

8.1.2 2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

8.2 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 13

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15

13 Contact information. . . . . . . . . . . . . . . . . . . . . 15

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

BLF573; BLF573S

HF / VHF power LDMOS transistor

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Document identifier: BLF573_BLF573S

Date of release: 8 July 2010