Philips blf571 Datasheet

BLF571

HF / VHF power LDMOS transistor

Rev. 02 — 24 February 2009 Product data sheet

1. Product profile

1.1 General description

A 20 W LDMOS RF transistor for broadcast applications and industrial applications in the
HF and VHF band.

Table 1. Production test performance

Mode of operation f V

CW 225 50 20 27.5 70

CAUTION

DS

(MHz) (V) (W) (dB) (%)

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.

P

L

G

p

η

D

1.2 Features

n Typical CW performance at frequencyof225 MHz, a supply voltage of 50 V and an I

of 50 mA:

u Average output power = 20 W
u Power gain = 27.5 dB

u Efficiency = 70 %
n Easy power control
n Integrated ESD protection
n Excellent ruggedness
n High efficiency
n Excellent thermal stability
n Designed for broadband operation (10 MHz to 500 MHz)
n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

n Industrial, scientific and medical applications
n Broadcast transmitter applications

Dq

NXP Semiconductors

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 drain
2 gate
3 source

[1] Connected to flange.

3. Ordering information

Table 3. Ordering information

Type number Package

BLF571 - flanged LDMOST ceramic package; 2 mounting holes;

BLF571

HF / VHF power LDMOS transistor

1

[1]

2

3

Name Description Version

2 leads

1

2

3

sym112

SOT467C

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

GS

I

D

T

stg

T

j

drain-source voltage - 110 V
gate-source voltage −0.5 +11 V
drain current - 3.6 A
storage temperature −65 +150 °C
junction temperature - 225 °C

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Unit

R

th(j-c)

thermal resistance from junction to case T

=80°C; PL= 20 W 2.9 K/W

case

BLF571_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 24 February 2009 2 of 13

NXP Semiconductors

6. Characteristics

Table 6. DC characteristics

Tj = 25°C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V

(BR)DSS

V

GS(th)

V

GSq

I

DSS

I

DSX

I

GSS

g

fs

R

DS(on)

C

rs

C

iss

C

oss

BLF571

HF / VHF power LDMOS transistor

drain-source breakdown
voltage

gate-source threshold voltage VDS= 10 V; ID= 25 mA 1.25 1.7 2.25 V
gate-source quiescent voltage VDS= 50 V; ID= 50 mA 1.25 1.75 2.25 V
drain leakage current VGS=0V; VDS=50V - - 1.4 µA
drain cut-off current VGS=V

gate leakage current VGS= 11 V; VDS= 0 V - - 140 nA
forward transconductance VDS=10V; ID= 1.25 A - 1.8 - S
drain-source on-state

resistance
feedback capacitance VGS=0V; VDS=50V;

input capacitance VGS=0V; VDS=50V;

output capacitance VGS=0V; VDS=50V;

VGS=0V; ID= 0.25 mA 110 - - V

V

=10V

DS

VGS=V
I

= 833 mA

D

GS(th)

GS(th)

+ 3.75 V;

+ 3.75 V;

3.0 3.6 - A

- 1.34 - Ω

- 0.18 - pF

f=1MHz

- 22.9 - pF

f=1MHz

- 9.64 - pF

f=1MHz

Table 7. RF characteristics

Mode of operation: CW; f = 225 MHz; RF performance at VDS= 50 V; IDq= 50 mA; T

case

=25°C;

unless otherwise specified; in a class-AB production test circuit.

Symbol Parameter Conditions Min Typ Max Unit

G
RL

η

p

in

D

power gain PL = 20 W 25.5 27.5 29.5 dB
input return loss PL = 20 W 10 13 - dB
drain efficiency PL = 20 W 67 70 - %

BLF571_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 24 February 2009 3 of 13

NXP Semiconductors

BLF571

HF / VHF power LDMOS transistor

50

C

oss

(pF)

40

30

20

10

0

VGS = 0 V; f = 1 MHz.

0504020 3010

001aaj172

VDS (V)

Fig 1. Output capacitance as a function of drain-source voltage; capacitance value

without internal matching

6.1 Ruggedness in class-AB operation

The BLF571 is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1
through all phases under the following conditions: VDS= 50 V; IDq= 50 mA; PL= 20 W;
f = 225 MHz.

7. Application information

7.1 Impedance information

Table 8. Typical impedance

Simulated ZS and ZL test circuit impedances.

f Z
MHz Ω Ω

225 9.7 + j31.5 31.7 + j29.3

Fig 2. Definition of transistor impedance

S

drain

Z

L

gate

Z

S

001aaf059

Z

L

BLF571_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 24 February 2009 4 of 13

NXP Semiconductors

7.2 Reliability

BLF571

HF / VHF power LDMOS transistor

5

10

Years

4

10

3

10

2

10

10

(7) (8) (9) (10) (11)

1

0 1.61.20.80.4

TTF (0.1 % failure fraction).
(1) Tj = 100 °C
(2) Tj = 110 °C
(3) Tj = 120 °C
(4) Tj = 130 °C
(5) Tj = 140 °C
(6) Tj = 150 °C
(7) Tj = 160 °C
(8) Tj = 170 °C
(9) Tj = 180 °C

(10) Tj = 190 °C
(11) Tj = 200 °C

Fig 3. BLF571 electromigration

(1) (2) (3) (4) (5) (6)

I

DS(DC)

001aaj173

(A)

BLF571_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 24 February 2009 5 of 13

NXP Semiconductors

8. Test information

8.1 RF performance

The following figures are measured in a class-AB production test circuit.

8.1.1 1-Tone CW

BLF571

HF / VHF power LDMOS transistor

G

(dB)

30

p

28

26

24

22

0302010 25155

001aaj174

G

p

η

D

PL (W)

80

η

D

(%)

60

40

20

0

VDS = 50 V; IDq= 50 mA; f = 225 MHz. VDS = 50 V; f = 225 MHz.

Fig 4. Power gain and drain efficiency as function of

load power; typical values

001aaj175

PL (W)

G

(dB)

30

p

28

26

24

22

0302010 25155

(5)
(4)
(3)
(2)
(1)

(1) IDq = 20 mA
(2) IDq = 40 mA
(3) IDq = 50 mA
(4) IDq = 60 mA
(5) IDq = 80 mA

Fig 5. Powergain as a function of load power; typical

values

BLF571_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 24 February 2009 6 of 13

NXP Semiconductors

BLF571

HF / VHF power LDMOS transistor

VDS = 50 V; IDq= 50 mA; f = 225 MHz.

(1) P

L(1dB)

(2) P

L(3dB)

Fig 6. Load power as function of input power; typical values

8.1.2 2-Tone CW

50

P

L

(dBm)

48

46

44

42

40

13 211915 17

= 43.3 dBm (21.4 W)
= 44 dBm (25.1 W)

001aaj176

ideal P

L

(2)

P

(1)

L

Pi (dBm)

P

L(PEP)

001aaj177

(W)

80

η

D

(%)

60

40

20

0

30

G

p

(dB)

28

26

24

22

0302010

G

p

η

D

VDS = 50 V; IDq= 50 mA; f1 = 224.95 MHz;
f2= 225.05 MHz.

Fig 7. Power gain and drain efficiency as function of

peak envelope load power; typical values

P

L(PEP)

001aaj178

(W)

0

IMD3
(dBc)

−20

−40

−60

0302010

(1)
(2)
(3)
(4)
(5)

VDS = 50 V; f1 = 224.95 MHz; f2= 225.05 MHz.
(1) IDq = 20 mA
(2) IDq = 40 mA
(3) IDq = 50 mA
(4) IDq = 60 mA
(5) IDq = 80 mA

Fig 8. Third order intermodulation distortion as a

function of peak envelope load power; typical

values

BLF571_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 24 February 2009 7 of 13

NXP Semiconductors

BLF571

HF / VHF power LDMOS transistor

8.2 Test circuit

Table 9. List of components

All capacitors should be soldered vertically. For test circuit, see Figure 9 and Figure 10.

Component Description Value Remarks

C1, C3, C4,

multilayer ceramic chip capacitor 100 pF

C5, C14
C2 multilayer ceramic chip capacitor 39 pF
C6 multilayer ceramic chip capacitor 68 pF
C7, C9 multilayer ceramic chip capacitor 1 nF
C8 multilayer ceramic chip capacitor 4.7 µF TDK C4532X7R1E475MT020U or equivalent
C10 multilayer ceramic chip capacitor 8.2 pF
C11 electrolytic capacitor 220 µF
C12 multilayer ceramic chip capacitor 33 pF
C13 multilayer ceramic chip capacitor 15 pF
L1 1 turn enamelled copper wire D = 5.5 mm;

d=1mm;
length=1mm

L2 2 turns enamelled copper wire D = 3.5 mm;

d=1mm;
length=3mm

L3 5 turns enamelled copper wire D=6mm;

d=1mm;
length=5mm

L4 3.3 turns enamelled copper wire D=3mm;

d=1mm;
length=4mm

L5 3 turns enamelled copper wire D=3mm;

d=1mm;

length=3mm
L6 stripline ­L7, L8, L10,

stripline ­L11, L17, L19,
L20

L9 stripline ­L12, L15 stripline ­L13, L14 stripline ­L16 stripline ­L18 stripline ­L21 stripline ­R1 metal film resistor 1000 Ω; 0.6 W

[1]

[1]
[1]
[1]

[1]

[1]
[1]

[2]

(L × W) 16.5 mm × 2.4 mm

[2]

(L × W) 3.0 mm × 5.0 mm

[2]

(L × W) 43.0 mm × 2.4 mm

[2]

(L × W) 3.5 mm × 2.4 mm

[2]

(L × W) 8.0 mm × 8.0 mm

[2]

(L × W) 3.0 mm × 5.9 mm

[2]

(L × W) 27.0 mm × 2.4 mm

[2]

(L × W) 28.5 mm × 2.4 mm

[1] American Technical Ceramics type 100B or capacitor of same quality.
[2] Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization);

thickness copper plating = 35 µm.

BLF571_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 24 February 2009 8 of 13

NXP Semiconductors

BLF571

HF / VHF power LDMOS transistor

V

V

GG

C8

DD

C11

C7

R1

input

L11

50 Ω

C1

L8L7

L1 L9 L18 L21L6

C4C3C2 C12 C13C10

L10

L2

L13

L12

C6C5

Fig 9. Class-AB common-source production test circuit

C8

C7

R1

C1

L1

5.5 mm 6.5 mm 5 mm3 mm

9 mm

L2

L14

L15

L3

C10

C9

output

L17L16

L4

C11

C9

L3

L4

C12C6C5C4C2 C3

L20L19

L5

L5

C13

C14

001aaj179

C14

50 Ω

NXP BLF571 225 MHz INPUT PCB REV1 NXP BLF571 225 MHz OUTPUT PCB REV2

001aaj180

Fig 10. Component layout for class-AB production test circuit

BLF571_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 24 February 2009 9 of 13

NXP Semiconductors

9. Package outline

BLF571

HF / VHF power LDMOS transistor

Flanged LDMOST ceramic package; 2 mounting holes; 2 leads

D

A

3

D

1

U

1

q

1

H

U

2

A

C

p

F

B

w

M M M

1

AB

SOT467C

c

E

1

E

2

U

1

5.97

5.72

0.235

0.225

EUROPEAN

PROJECTION

Q

U

2

w

w

2

1

0.25

0.51

0.010 0.020

ISSUE DATE

99-12-06
99-12-28

w

M M

scale

18.54

17.02

0.73

0.67

C

2

3.43

3.18

0.135

0.125

b

0 5 10 mm

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

mm

inch

OUTLINE
VERSION

SOT467C

A

4.67

3.94

0.184

0.155

b

5.59

5.33

0.220

0.210

cD

0.15

0.10

0.006

0.004

IEC JEDEC EIAJ

9.25

9.04

0.364

0.356

D

9.27

9.02

0.365

0.355

E

5.92

5.77

0.233

0.227

E

1

1.65

5.97

1.40

5.72

0.065

0.235

0.055

0.225

REFERENCES

1

FH p q

UNIT

Q

2.21

1.96

0.087

0.077

14.27

0.562

20.45

20.19

0.805

0.795

Fig 11. Package outline SOT467C

BLF571_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 24 February 2009 10 of 13

NXP Semiconductors

10. Abbreviations

Table 10. Abbreviations

Acronym Description

CW Continuous Wave
EDGE Enhanced Data rates for GSM Evolution
GSM Global System for Mobile communications
HF High Frequency
LDMOS Laterally Diffused Metal-Oxide Semiconductor
LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor
RF Radio Frequency
TTF Time To Failure
VHF Very High Frequency
VSWR Voltage Standing-Wave Ratio

11. Revision history

BLF571

HF / VHF power LDMOS transistor

Table 11. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLF571_2 20090224 Product data sheet - BLF571_1
Modifications:
BLF571_1 20081211 Preliminary data sheet - -

• Data sheet status updated from Preliminary to Product

BLF571_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 24 February 2009 11 of 13

NXP Semiconductors

12. Legal information

12.1 Data sheet status

BLF571

HF / VHF power LDMOS transistor

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product statusof device(s) described inthis document mayhave changed since this document waspublished and maydiffer incase of multipledevices. The latestproduct status

information is available on the Internet at URL

[1][2]

Product status

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information includedhereinand shall havenoliability for the consequencesof
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with thesameproduct type number(s) andtitle.A short data sheet isintended
for quickreference only and should not be relied upon to containdetailedand
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors doesnotgive any representations or
warranties, expressedor implied, as to the accuracy orcompletenessof such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedesandreplaces all information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental

[3]

http://www.nxp.com.

Definition

damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute MaximumRatingsSystem of IEC 60134) may cause permanent
damage to thedevice. Limiting values are stressratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.

12.4 Trademarks

Notice: Allreferenced brands, productnames, service names and trademarks
are the property of their respective owners.

13. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

BLF571_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 24 February 2009 12 of 13

NXP Semiconductors

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6.1 Ruggedness in class-AB operation. . . . . . . . . . 4

7 Application information. . . . . . . . . . . . . . . . . . . 4

7.1 Impedance information. . . . . . . . . . . . . . . . . . . 4

7.2 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6

8.1 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 6

8.1.1 1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

8.1.2 2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

8.2 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13 Contact information. . . . . . . . . . . . . . . . . . . . . 12

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

BLF571

HF / VHF power LDMOS transistor

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2009. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

Date of release: 24 February 2009

Document identifier: BLF571_2