Philips blf548 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D091

BLF548

UHF push-pull power MOS
transistor

Product specification
Supersedes data of Oct 1992

2003 Sep 26

Philips Semiconductors Product specification

h

UHF push-pull power MOS transistor BLF548

FEATURES

• High power gain

• Easy power control

• Good thermal stability

• Gold metallization ensures

excellent reliability

• Designed for broadband operation.

DESCRIPTION

Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor designed for
communications transmitter
applications in the UHF frequency
range.

The transistor is encapsulated in a
4-lead, SOT262A2 balanced flange
package, with twoceramic caps. The
mounting flange provides the
common source connection for the
transistors.

PIN CONFIGURATION

12

MBB157

d

2

s

d

1

alfpage

g

2

g

1

55

Top view

34

MSB008

Fig.1 Simplified outline and symbol.

CAUTION

This product is supplied in anti-static packing to prevent damage caused by
electrostaticdischargeduringtransportandhandling.Forfurther information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.

PINNING - SOT262A2

PIN DESCRIPTION

1 drain 1
2 drain 2
3 gate 1
4 gate 2
5 source

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.

WARNING

QUICK REFERENCE DATA

RF performance at Th = 25 °C in a push-pull common source test circuit.

MODE OF OPERATION

f

(MHz)

V

(V)

DS

P

(W)

L

G

(dB)

p

η

D

(%)

CW, class-B 500 28 150 >10 >50

2003 Sep 26 2

Philips Semiconductors Product specification

UHF push-pull power MOS transistor BLF548

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per transistor section unless otherwise specified

V

DS

V

GS

I

D

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

R

th mb-h

drain-source voltage − 65 V
gate-source voltage −±20 V
drain current (DC) − 15 A
total power dissipation Tmb≤ 25 °C; total device;both sections

− 330 W

equally loaded
storage temperature −65 +150 °C
junction temperature − 200 °C

thermal resistance from junction to
mounting base

thermal resistance from mounting
base to heatsink

Tmb=25°C; P

= 330 W; total device;

tot

both sections equally loaded

total device; both sections equally

loaded

0.5 K/W

0.15 K/W

2

10

handbook, halfpage

I

D

(A)

(1)

10

1

110

(1) Current in this area may be limited by R
(2) Tmb=25°C.
Total device; both sections equally loaded.

Fig.2 DC SOAR.

(2)

VDS (V)

.

DSon

MRA997

Th (

MRA532

o

C)

400

handbook, halfpage

P

tot

(W)

350

300

250

200

150

100

50

2

10

0

0 20 40 60 80 100 120

(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.

(2)

(1)

Fig.3 Power derating curves.

2003 Sep 26 3

Philips Semiconductors Product specification

UHF push-pull power MOS transistor BLF548

CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Per transistor section

V

(BR)DSS

I

DSS

I

GSS

V

GSth

g

fs

R

DSon

I

DSX

C

is

C

os

C

rs

drain-source breakdown voltage VGS= 0; ID=40mA 65 −−V
drain-source leakage current VGS= 0; VDS=28V −−0.5 mA
gate-source leakage current VGS= ±20 V; VDS=0 −−1µA
gate-source threshold voltage ID= 160 mA; VDS=10V 2 − 4V
forward transconductance ID= 4.8 A; VDS= 10 V 2.4 3.5 − S
drain-source on-state resistance ID= 4.8 A; VGS=10V − 0.25 0.3 Ω
on-state drain current VGS= 15 V; VDS= 10 V 16 20 − A
input capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 105 − pF
output capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 90 − pF
feedback capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 25 − pF

VGS group indicator

LIMITS

GROUP

(V)

GROUP

MIN. MAX. MIN. MAX.

A 2.0 2.1 O 3.3 3.4
B 2.1 2.2 P 3.4 3.5
C 2.2 2.3 Q 3.5 3.6
D 2.3 2.4 R 3.6 3.7
E 2.4 2.5 S 3.7 3.8
F 2.5 2.6 T 3.8 3.9
G 2.6 2.7 U 3.9 4.0
H 2.7 2.8 V 4.0 4.1

J 2.8 2.9 W 4.1 4.2
K 2.9 3.0 X 4.2 4.3
L 3.0 3.1 Y 4.3 4.4

M 3.1 3.2 Z 4.4 4.5
N 3.2 3.3

LIMITS

(V)

2003 Sep 26 4

Philips Semiconductors Product specification

UHF push-pull power MOS transistor BLF548

handbook, halfpage

3

TC

(mV/K)

2

1

0

−1

−2

−3

−4

10

VDS=10V.

−2

−1

10

110

ID (A)

Fig.4 Temperature coefficient of gate-source

voltageasafunctionofdraincurrent;typical
values per section.

MRA524

25

handbook, halfpage

I

D

(A)

20

15

10

5

0

0 4 8 12 16

VDS= 10 V; Tj=25°C.

MRA529

VGS (V)

Fig.5 Drain current as a function of gate-source

voltage; typical values per section.

0.5

handbook, halfpage

R

DSon

(Ω)

0.4

0.3

0.2

0.1

0

0 40 80 120

ID = 4.8 A; VGS = 10 V.

Tj (

o

C)

Fig.6 Drain-source on-state resistance as a

function of junction temperature; typical
values per section.

MRA522

400

handbook, halfpage

C

(pF)

300

200

100

0

0 102030

C

os

C

is

MRA525

VDS (V)

Fig.7 Input and output capacitance as functions

of drain-source voltage; typical values per
section.

2003 Sep 26 5

Philips Semiconductors Product specification

UHF push-pull power MOS transistor BLF548

100

handbook, halfpage

C

rs

(pF)

80

60

40

20

0

0102030

MRA521

V

(V)

DS

Fig.8 Feedback capacitance as a function of

drain-source voltage; typical values per
section.

APPLICATION INFORMATION FOR CLASS-B OPERATION

Th = 25 °C; R

= 0.15 K/W, unless otherwise specified.

th mb-h

RF performance in a common source, class-B, push-pull test circuit.

MODE OF OPERATION

f

(MHz)

CW, class-B 500 28 2 x 160 150 >10

V

(V)

DS

I

DQ

(mA)

P

(W)

L

G

p

(dB)

η

(%)

D

>50

typ. 11

typ. 55

Ruggedness in class-B operation

The BLF548 is capable of withstanding a load mismatch corresponding to VSWR = 10: 1 through all phases under the
following conditions: V

= 28 V; f = 500 MHz at rated output power.

DS

2003 Sep 26 6

Philips Semiconductors Product specification

UHF push-pull power MOS transistor BLF548

20

handbook, halfpage

G

p

(dB)

16

12

8

4

0

0 50 100 150 200

Class-B operation; VDS= 28 V; IDQ=2×160 mA;
f = 500 MHz; Z

G

p

η

D

= 1.1 + j0.6 Ω (per section).

L

MRA527

PL (W)

Fig.9 Power gain and efficiency as functions of

load power; typical values.

100

80

60

40

20

0

η

(%)

handbook, halfpage

D

200

P

L

(W)

160

120

80

40

0

0102030

Class-B operation; VDS = 28 V; IDQ = 2 × 160 mA;
f = 500 MHz; Z

= 1.1 + j0.6 Ω (per section).

L

MRA531

P

(W)

IN

Fig.10 Load power as a function of input power;

typical values.

2003 Sep 26 7

Philips Semiconductors Product specification

UHF push-pull power MOS transistor BLF548

+V

D

50 Ω
input

C12

V

bias

C1

L1

L2

C3

L3

R1 R2

C7

L4

C5C4

R3

C8

C6

L10

C14

L6

C9

DUT

C18

L8

L13 L18

C19

C20

L12

C13

C21

L11R7

L20

C23

C22

L22

L23

L24

50 Ω

output

f = 500 MHz.

C2

V

bias

L5

C10

L7

R4

C11

R6R5

L9 L14 L19

L15

C15

C17

+V

R8

C16

D

L16 L17

L21

C24

MBC232

Fig.11 Test circuit for class-B operation.

agewidth

List of components class-B test circuit (see Fig.11)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C2 multilayer ceramic chip capacitor;

22 pF

note 1

C3 multilayer ceramic chip capacitor;

16 pF

note 1
C4 film dielectric trimmer 2 to 9 pF 2222 809 09005
C5 multilayer ceramic chip capacitor;

27 pF

note 2
C6, C21, C22 film dielectric trimmer 2 to 18 pF 2222 809 09006
C7, C10, C14, C15 multilayer ceramic chip capacitor;

390 pF

note 1
C8, C11, C12, C17 multilayer ceramic chip capacitor 100 nF 2222 852 47104
C9 multilayer ceramic chip capacitor;

note 3

2 × 56 pF
in series

2003 Sep 26 8

Philips Semiconductors Product specification

UHF push-pull power MOS transistor BLF548

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C13, C16 electrolytic capacitor 10 µF, 63 V 2222 030 38109
C18 multilayer ceramic chip capacitor;

note 2
C19 multilayer ceramic chip capacitor;

note 2
C20 multilayer ceramic chip capacitor;

note 2
C23, C24 multilayer ceramic chip capacitor;

note 1
L1, L3, L22, L24 stripline; note 4 34.5 Ω length 66.5 mm

L2, L23 semi-rigid cable; note 5 50 Ω length 66.5 mm

L4, L5 stripline; note 4 22.3 Ω length 35 mm

L6, L7 stripline; note 4 22.3 Ω length 10 mm

L8, L9 stripline; note 4 22.3 Ω length 5.5 mm

L10, L11, L16, L17 grade 3B Ferroxcube wideband RF

choke
L12, L15 1 turn enamelled 1.5 mm copper

wire

L13, L14 stripline; note 4 22.3 Ω length 15 mm

L18, L19 stripline; note 4 22.3 Ω length 36 mm

L20, L21 stripline; note 4 22.3 Ω length 8.5 mm

R1, R5 0.4 W metal film resistor 24.7 kΩ 2322 151 72473
R2, R6 10 turn potentiometer 5 kΩ
R3, R4 0.4 W metal film resistor 10.5 kΩ 2322 151 71053
R7, R8 1 W metal film resistor 10 Ω 2322 151 51009

18 pF

12 pF

8.2 pF

30 pF

width 4 mm

width 3.6 mm

width 7 mm

width 7 mm

width 7 mm

4312 020 36642

17 nH length 5 mm

int. dia. 9 mm
leads 2 × 5mm

width 7 mm

width 7 mm

width 7 mm

Notes

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

2. American Technical Ceramics (ATC) capacitor, type 175B or other capacitor of the same quality.

3. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.

4. The striplines are on a double copper-clad printed-circuit board, with PTFE fibre-glass dielectric (εr = 2.2),
thickness 0.79 mm.

5. Cables L2 and L23 are soldered to striplines L1 and L22 respectively.

2003 Sep 26 9

Philips Semiconductors Product specification

UHF push-pull power MOS transistor BLF548

handbook, full pagewidth

L1/L2

L3

handbook, full pagewidth

C2

C1

C3
C4

L18

L19

V

C13

C16

V

DS

C22

DS

C12

C23

L20

L21

L22/L23

C24

L24

MBC231 - 1

R2

L10
R7

C8
C7

R3

L4

C5
C6

L5

R4

L6
C9
L7

C10

C11

R6

C14

L13

L8

C18
C19

L9

L14

C15 C17

200 mm

L12

C20
C21

L15

L11

L16

R8
L17

strap

rivets rivets

strap

The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully
metallized to serve as a ground plane. Connections are made by means of copper straps and hollow rivets for a
direct contact between upper and lower sheets.

strap

strap

strap

strap

Fig.12 Component layout for 500 MHz class-B test circuit.

strap

strap

MBC230

70

mm

2003 Sep 26 10

Philips Semiconductors Product specification

UHF push-pull power MOS transistor BLF548

handbook, halfpage

1

Z

i

(Ω)

0

−1

−2

−3

−4

50 150 250 350 450 550

Class-B operation; VDS= 28 V; IDQ= 160 mA (per section);

= 150 W (total device).

P

L

r

i

x

i

MRA528

f (MHz)

Fig.13 Input impedance as a function of frequency

(series components); typical values per
section.

handbook, halfpage

6

Z

L

(Ω)

5

4

R

3

2

1

0

50 150 250 350 450 550

Class-B operation;VDS=28V;IDQ= 160 mA (per section);

= 150 W (total device).

P

L

L

X

L

MRA530

f (MHz)

Fig.14 Load impedance as a function of frequency

(series components); typical values per
section.

handbook, halfpage

Fig.15 Definition of MOS impedance.

30

handbook, halfpage

G

p

(dB)

25

20

15

10

Z

i

Z

MBA379

L

5

0

50 150 250 350 450 550

Class-B operation;VDS=28V;IDQ= 160 mA (per section);

= 150 W (total device).

P

L

MRA526

f (MHz)

Fig.16 Power gain as a function of frequency;

typical values per section.

2003 Sep 26 11

Philips Semiconductors Product specification

UHF push-pull power MOS transistor BLF548

BLF548 scattering parameters

VDS= 28 V; ID= 40 mA; note 1

f (MHz)

s

11

s

21

s

12

s

22

|s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ

5 0.99 −14.0 13.60 171.0 0.02 81.0 0.89 −12.8
10 0.98 −27.6 13.20 162.0 0.04 72.4 0.87 −25.3
20 0.93 −52.0 11.90 146.0 0.07 57.1 0.82 −48.0
30 0.88 −72.0 10.30 134.0 0.09 44.8 0.77 −66.6
40 0.84 −87.7 8.93 124.0 0.10 35.2 0.72 −81.3
50 0.81 −100.0 7.75 116.0 0.11 27.7 0.68 −93.0
60 0.79 −110.0 6.78 110.0 0.12 21.6 0.66 −102.0
70 0.77 −118.0 6.00 104.0 0.12 16.7 0.64 −109.0
80 0.76 −124.0 5.36 99.8 0.12 12.5 0.63 −115.0
90 0.75 −129.0 4.82 95.9 0.12 8.9 0.62 −120.0

100 0.75 −133.0 4.37 92.3 0.13 5.7 0.61 −124.0

125 0.74 −141.0 3.53 84.7 0.13 −1.1 0.61 −131.0
150 0.74 −147.0 2.94 78.3 0.13 −6.6 0.61 −137.0
175 0.74 −151.0 2.50 72.6 0.12 −11.5 0.62 −140.0
200 0.75 −154.0 2.16 67.5 0.12 −15.8 0.64 −143.0
250 0.77 −159.0 1.67 58.4 0.12 −23.3 0.67 −148.0
300 0.78 −163.0 1.33 50.4 0.11 −29.7 0.70 −151.0

350 0.80 −167.0 1.09 43.1 0.10 −35.3 0.73 −154.0

400 0.82 −169.0 0.91 36.6 0.10 −40.3 0.75 −157.0
450 0.84 −172.0 0.77 30.6 0.09 −44.7 0.78 −160.0
500 0.85 −175.0 0.66 25.1 0.08 −48.6 0.80 −162.0
600 0.89 −179.0 0.50 15.6 0.07 −55.2 0.84 −167.0
700 0.90 177.0 0.39 7.5 0.06 −60.4 0.88 −170.0
800 0.92 173.0 0.32 0.6 0.05 −64.3 0.90 −174.0
900 0.93 169.0 0.26 −5.4 0.04 −67.3 0.92 −177.0

1000 0.94 166.0 0.22 −10.8 0.04 −69.2 0.93 −179.0

Note

1. For more extensive s-parameters see internet:
http://www.semiconductors.philips.com/markets/communications/wirelesscommunications/broadcast

2003 Sep 26 12

Philips Semiconductors Product specification

UHF push-pull power MOS transistor BLF548

PACKAGE OUTLINE

Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT262A2

D

A

F

D

1

U

1

q

H

1

w

M M

2

C

12

U

H

2

5

A

e

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

5.85

5.58

c

0.16

0.10

0.006

0.004

Db

22.17

21.46

0.873

0.845

D

1

21.98

21.71

0.865

0.855

EE

e U

10.27

11.05

10.05

0.404

0.435

0.396

UNIT

mm

inches

A

5.39

4.62

0.212

0.182

0.230

0.220

43

b

0 5 10 mm

scale

F

1

10.29

10.03

0.405

0.396

1.78

1.52

0.070

0.060

21.08

19.56

0.830

0.770

H

w

3

M

H

1

17.02

16.51

0.670

0.650

B

C

p

w

1

p

Q

3.28

2.47

3.02

2.20

0.129

0.097

0.119

0.087

c

E

1

M M M

AB

Q

qw

U

1

2

9.91

34.17

27.94

33.90

1.345

1.335

9.65

0.390

0.380

E

w

1

w

3

2

0.250.25 0.51

0.0100.010 0.0201.100

OUTLINE

VERSION

SOT262A2

IEC JEDEC EIAJ

REFERENCES

2003 Sep 26 13

EUROPEAN

PROJECTION

ISSUE DATE

99-03-29

Philips Semiconductors Product specification

UHF push-pull power MOS transistor BLF548

DATA SHEET STATUS

LEVEL

DATA SHEET

STATUS

(1)

PRODUCT

STATUS

(2)(3)

DEFINITION

I Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

III Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

DEFINITIONS

DISCLAIMERS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratany other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.

Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2003 Sep 26 14

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [email protected].

© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Printed in The Netherlands 613524/04/pp15 Date of release: 2003 Sep 26 Document order number: 9397 750 11592

SCA75