Philips blf546 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D092

BLF546

UHF push-pull power MOS
transistor

Product specification
Supersedes data of 1998 Jan 09

2003 Sep 22

Philips Semiconductors Product specification

UHF push-pull power MOS transistor BLF546

FEATURES

• High power gain

• Easy power control

• Good thermal stability

• Gold metallization ensures

excellent reliability

• Designed for broadband operation.

DESCRIPTION

Silicon N-channel enhancement
mode vertical D-MOS push-pull
transistor designed for
communications transmitter
applications in the UHF frequency
range.

The transistor is encapsulated in a
4-lead, SOT268A balanced flange
package, with twoceramic caps. The
mounting flange provides the
common source connection for the
transistors.

PIN CONFIGURATION

handbook, halfpage

1

2

Top view

4

g

5

3

g

d

s

d

MAM395

Fig.1 Simplified outline and symbol.

CAUTION

This product is supplied in anti-static packing to prevent damage caused by
electrostaticdischargeduringtransportandhandling.Forfurther information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.

PINNING - SOT268A

WARNING

PIN DESCRIPTION

1 drain 1
2 gate 1
3 gate 2
4 drain 2
5 source

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.

QUICK REFERENCE DATA

RF performance at Th=25°C in a push-pull common source test circuit.

MODE OF OPERATION

f

(MHz)

V

(V)

DS

P

(W)

L

G

(dB)

p

(%)

CW, class-B 500 28 80 >11 >50

η

D

2003 Sep 22 2

Philips Semiconductors Product specification

UHF push-pull power MOS transistor BLF546

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per transistor section (unless otherwise specified)

V

DS

V

GS

I

D

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

R

th mb-h

drain-source voltage − 65 V
gate-source voltage −±20 V
drain current (DC) − 9A
total power dissipation Tmb≤ 25 °C; total device;

− 145 W

both sections equally loaded
storage temperature −65 150 °C
junction temperature − 200 °C

thermal resistance from junction to
mounting base

thermal resistance from mounting
base to heatsink

total device;

both sections equally loaded

total device;

both sections equally loaded

1.2 K/W

0.25 K/W

2

10

handbook, halfpage

I

D

(A)

10

1

(1) Current in this area may be limited by R
(2) Tmb=25°C.
Total device; both sections equally loaded.

(1)

110

Fig.2 DC SOAR.

MRA995

(2)

2

VDS (V)

.

DSon

10

200

handbook, halfpage

P

tot

(W)

160

(2)

120

(1)

80

40

0

0

(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.

40 80

120

MDA519

Th (°C)

160

Fig.3 Power derating curves.

2003 Sep 22 3

Philips Semiconductors Product specification

UHF push-pull power MOS transistor BLF546

CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Per section

V

(BR)DSS

I

DSS

I

GSS

V

GSth

g

fs

R

DSon

I

DSX

C

is

C

os

C

rs

drain-source breakdown voltage VGS= 0; ID= 20 mA 65 −−V
drain-source leakage current VGS= 0; VDS= 28 V −−2mA
gate-source leakage current VGS= ±20 V; VDS=0 −−1µA
gate-source threshold voltage ID= 80 mA; VDS= 10 V 1 − 4V
forward transconductance ID= 2.4 A; VDS= 10 V 1.2 1.7 − S
drain-source on-state resistance ID= 2.4 A; VGS= 10 V − 0.4 0.6 Ω
on-state drain current VGS= 15 V; VDS= 10 V − 10 − A
input capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 60 − pF
output capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 46 − pF
feedback capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 15 − pF

VGS group indicator

GROUP

A 2.0 2.1 O 3.3 3.4
B 2.1 2.2 P 3.4 3.5
C 2.2 2.3 Q 3.5 3.6
D 2.3 2.4 R 3.6 3.7
E 2.4 2.5 S 3.7 3.8

F 2.5 2.6 T 3.8 3.9
G 2.6 2.7 U 3.9 4.0
H 2.7 2.8 V 4.0 4.1

J 2.8 2.9 W 4.1 4.2
K 2.9 3.0 X 4.2 4.3

L 3.0 3.1 Y 4.3 4.4
M 3.1 3.2 Z 4.4 4.5
N 3.2 3.3

LIMITS

(V)

GROUP

LIMITS

(V)

MIN. MAX. MIN. MAX.

2003 Sep 22 4

Philips Semiconductors Product specification

UHF push-pull power MOS transistor BLF546

12

handbook, halfpage

T.C.

(mV/K)

8

4

0

−4

−2

10

VDS=10V.

−1

10

110

ID (A)

Fig.4 Temperature coefficient of gate-source

voltageasafunctionofdraincurrent;typical
values per section.

MDA520

12

handbook, halfpage

I

D

(A)

8

4

0

0

VDS= 10 V; Tj=25°C.

4

816

MDA521

12

V

(V)

GS

Fig.5 Drain current as a function of gate-source

voltage; typical values per section.

0.8

handbook, halfpage

R

DSon

(Ω)

0.6

0.4

0.2

0

0 40 80 160

ID= 2.4 A; VGS=10V.

120

Fig.6 Drain-source on-state resistance as a

function of junction temperature; typical
values per section.

MDA522

Tj (°C)

C

is

C

os

30

V

DS

MDA523

(V)

250

handbook, halfpage

C

(pF)

200

150

100

50

0

110

VGS= 0; f = 1 MHz.

20 40

Fig.7 Input and output capacitance as functions

of drain-source voltage; typical values per
section.

2003 Sep 22 5

Philips Semiconductors Product specification

UHF push-pull power MOS transistor BLF546

30

V

DS

MDA524

(V)

40

80

handbook, halfpage

C

rs

(pF)

60

40

20

0

01020

VGS= 0; f = 1 MHz.

Fig.8 Feedback capacitance as a function of

drain-source voltage; typical values per
section.

APPLICATION INFORMATION FOR CLASS-B OPERATION

Th=25°C; R

= 0.25 K/W, unless otherwise specified.

th mb-h

RF performance in a common source, class-B, push-pull circuit.

MODE OF OPERATION

f

(MHz)

CW, class-B 500 28 2 × 80 80 >11

V

(V)

DS

I

DQ

(mA)

P

(W)

L

G

p

(dB)

η

(%)

D

>50

typ. 13

typ. 60

Ruggedness in class-B operation

The BLF546 is capable of withstanding a full load mismatch corresponding to VSWR = 10 through all phases under the
following conditions: V

= 28 V; f = 500 MHz at rated output power.

DS

2003 Sep 22 6

Philips Semiconductors Product specification

UHF push-pull power MOS transistor BLF546

100

MDA525

PL (W)

25

handbook, halfpage

G

p

(dB)

20

15

10

5

0

Class-B operation; VDS= 28 V; IDQ=2×80 mA;

= 2.3 + j2.7 Ω(per section); f = 500 MHz.

Z

L

G

p

η

C

40 60 80

Fig.9 Power gain and efficiency as functions of

load power; typical values.

120

100

η

(%)

80

60

40

20

0

12

MDA526

PIN (W)

120

C

handbook, halfpage

P

L

(W)

80

40

0

0

Class-B operation; VDS= 28 V; IDQ=2×80 mA;

= 2.3 + j2.7 Ω(per section); f = 500 MHz.

Z

L

4

816

Fig.10 Load power as a function of input power;

typical values.

2003 Sep 22 7

Philips Semiconductors Product specification

UHF push-pull power MOS transistor BLF546

handbook, full pagewidth

50 Ω

input

L1L3C1

L2

V

BIAS

L4 L6 L8 L10 L12

C1

L5 L7 L9 L11 L13

V

BIAS

R1

C3

C4 C5 C6 C9

R5 R6

C7

C10

R2

R3

R4

C8

C11

R7 L20

D.U.T.

BLF546

R8 L21

+V

D

C12

C13

C14

L16

L14 L18 L22 L26

C18

C19 C20 C21 C22

L15 L19 L23 L25

L17

C15

C17

C16

L24

MDA530

C23

C24

L28

L27

50 Ω

output

f = 500 MHz.

+V

D

Fig.11 Test circuit for class-B operation.

List of components (see Fig.11)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C2 multilayer ceramic chip capacitor;

33 pF, 500 V

note 1

C3 multilayer ceramic chip capacitor;

11 pF, 500 V

note 1
C4, C6, C21, C22 film dielectric trimmer 2 to 9 pF 2222 809 09005
C5 multilayer ceramic chip capacitor;

12 pF, 500 V

note 2
C7, C10, C14, C15 multilayer ceramic chip capacitor;

390 pF, 500 V

note 1
C8, C11, C12, C17 multilayer ceramic chip capacitor 100 nF, 50 V 2222 852 47104
C9 multilayer ceramic chip capacitor;

39 pF, 500 V

note 2
C13, C16 electrolytic capacitor 4.7 µF, 63 V 2222 030 38478

2003 Sep 22 8

Philips Semiconductors Product specification

UHF push-pull power MOS transistor BLF546

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C18, C19 multilayer ceramic chip capacitor;

note 2
C20 multilayer ceramic chip capacitor;

note 2
C23, C24 multilayer ceramic chip capacitor;

note 1
L1, L3, L26, L28 stripline; note 3 50 Ω 55.6 × 2.4 mm
L2 semi-rigid cable; note 4 50 Ω ext. dia. 2 mm

L4, L5 stripline; note 3 42 Ω 12 × 3mm
L6, L7 stripline; note 3 42 Ω 26.5 × 3mm
L8, L9 stripline; note 3 42 Ω 5.5 × 3mm
L10, L11 stripline; note 3 42 Ω 6 × 3mm
L12, L13 stripline; note 3 42 Ω 3 × 3 mm
L14, L15 stripline; note 3 42 Ω 7 × 3 mm
L16, L17 3 turns enamelled 1 mm copper wire 15.6 nH length 8.5 mm

L18, L19 stripline; note 3 42 Ω 12 × 3mm
L20, L21 grade 3B Ferroxcube RF choke 4312 020 36642
L22, L23 stripline; note 3 42 Ω 20 × 3mm
L24, L25 stripline; note 3 42 Ω 14 × 3mm
L27 semi-rigid cable; note 5 50 Ω ext. dia. 2 mm

R1, R5 0.4 W metal film resistor 11.5 kΩ 2322 151 71153
R2, R6 10 turns cermet potentiometer 50 kΩ
R3, R4 0.4 W metal film resistor 10 kΩ 2322 151 71003
R7, R8 1 W metal film resistor 10 Ω 2322 153 51009

18 pF, 500 V

15 pF, 500 V

15 pF, 500 V

ext. conductor
length 55.6 mm

int. dia. 5.4 mm
leads 2 × 5mm

ext. conductor
length 55.6 mm

Notes

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

2. American Technical Ceramics (ATC) capacitor, type 175B or other capacitor of the same quality.

3. The striplines are on a double copper-clad printed circuit board, with glass microfibre reinforced PTFE (εr= 2.2);
thickness1⁄32inch.

4. Semi-rigid cable L2 is soldered on to stripline L3.

5. Semi-rigid cable L27 is soldered on to stripline L28.

2003 Sep 22 9

Philips Semiconductors Product specification

UHF push-pull power MOS transistor BLF546

200

handbook, full pagewidth

straps straps

V

D

C15

L18

C19

L19

L16

L17

C12

L20

R7

C20

C21

R8

L21

C17

V

L22
L23

D

C13

C16

C22

L24
L25

C23

C24

L26

R2

L2

L3 L27

C1

L4

C3 C4 C5

L5

C2

L1

L6
L7

C7 C8 C14

R3

L8

L10

L12 L14

C6

C9C18

L15

L13

L11

L9

R4

C10 C11

R6

85

L28

MDA518

Dimensions in mm.
The circuit and components are situated on one side of the printed circuit board, the other side being fully

metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets
for a direct contact between upper and lower sheets.

Fig.12 Component layout for 500 MHz test circuit.

2003 Sep 22 10

Philips Semiconductors Product specification

UHF push-pull power MOS transistor BLF546

handbook, halfpage

2

Z

i

(Ω)

0

−2

−4

−6

−8

0 200

Class-B operation; VDS= 28 V; IDQ=2×80 mA; PL=80W.

r

i

x

i

400 600

MDA527

f (MHz)

Fig.13 Input impedance as a function of frequency

(series components); typical values per
section.

10

handbook, halfpage

Z

L

(Ω)

8

R

6

4

2

0

0 200

Class-B operation; VDS= 28 V; IDQ=2×80 mA; PL=80W.

L

X

L

400 600

MDA528

f (MHz)

Fig.14 Load impedance as a function of frequency

(series components); typical values per
section.

30

handbook, halfpage

G

p

(dB)

20

10

0

0

Class-B operation; VDS= 28 V; IDQ=2×80 mA; PL=80W.

200

400 600

f (MHz)

Fig.15 Power gain as a function of frequency;

typical values per section.

MDA529

2003 Sep 22 11

Philips Semiconductors Product specification

UHF push-pull power MOS transistor BLF546

PACKAGE OUTLINE

Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT268A

D

A

F

5

U

1

q

H

1

1

U2H

A

2

b

e

w

M M

2

4

3

w

M

3

B

C

C

P

w

M M M

AB

1

c

E

Q

0 5 10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

inches

A

4.91

4.19

0.193

0.165

OUTLINE
VERSION

SOT268A

1.66

1.39

0.065

0.055

c

Db

EU

12.96

12.44

0.510

0.490

6.48

6.22

0.255

0.245

0.254

0.13

0.07

0.005

0.003

IEC JEDEC EIAJ

F

e

17.02

2.04

6.45

16.00

1.77

0.670

0.080

0.630

0.070

REFERENCES

H

H

1

8.23

7.72

0.135

0.324

0.125

0.304

2003 Sep 22 12

p

3.43

3.17

Q

2.67

2.41

0.105

0.095

qw

U

1

24.90

18.42

24.63

0.980

0.970

PROJECTION

w

1

2

6.61

6.35

0.260

0.250

EUROPEAN

w

3

2

0.250.25 0.51

0.0100.010 0.0200.725

ISSUE DATE

99-03-29

Philips Semiconductors Product specification

UHF push-pull power MOS transistor BLF546

DATA SHEET STATUS

LEVEL

DATA SHEET

STATUS

(1)

PRODUCT

STATUS

(2)(3)

DEFINITION

I Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

III Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. Fordatasheets describing multiple type numbers, the highest-level product status determines the data sheet status.

DEFINITIONS

DISCLAIMERS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratany other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.

Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2003 Sep 22 13

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [email protected].

© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 613524/03/pp14 Date of release: 2003 Sep 22 Document order number: 9397 750 11591

SCA75