Philips blf544 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D076

BLF544

UHF power MOS transistor

Product specification
Supersedes data of 1998 Jan 21

2003 Sep 18

Philips Semiconductors Product specification

UHF power MOS transistor BLF544

FEATURES

PINNING - SOT171A

• High power gain

• Easy power control

• Good thermal stability

• Gold metallization ensures excellent reliability

• Designed for broadband operation.

APPLICATIONS

• Communication transmitters in the UHF frequency
range.

DESCRIPTION

handbook, halfpage

N-channel enhancement mode vertical D-MOS power
transistor encapsulated in a 6-lead, SOT171A flange
packagewithaceramiccap.Allleadsareisolatedfromthe
flange.
A marking code showing gate-source voltage (VGS)
information is provided for matched pair applications.

QUICK REFERENCE DATA

RF performance at Th=25°C in a common source class-B circuit.

PIN DESCRIPTION

1 source
2 source
3 gate
4 drain
5 source
6 source

6

g

12345

Top view

MAM390

Fig.1 Simplified outline and symbol.

d
s

MODE OF OPERATION

f

(MHz)

V

(V)

DS

P

(W)

L

G

(dB)

p

η

D

(%)

CW, class-B 500 28 20 >11 >50
CW, class-B 960 28 20 typ. 7 typ. 50

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

2003 Sep 18 2

Philips Semiconductors Product specification

UHF power MOS transistor BLF544

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GS

I

D

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-mb

R

th mb-h

drain-source voltage − 65 V
gate-source voltage −±20 V
drain current (DC) − 3.5 A
total power dissipation Tmb≤ 25 °C − 48 W
storage temperature −65 +150 °C
junction temperature − 200 °C

thermal resistance from junction to mounting base 3.7 K/W
thermal resistance from mounting base to heatsink 0.4 K/W

10

handbook, halfpage

I

D

(A)

(1)

1

−1

10

11010

(1) Current is this area may be limited by R
(2) Tmb=25°C.

Fig.2 DC SOAR.

(2)

VDS (V)

DSon.

MRA992

2

60

handbook, halfpage

P

tot

(W)

40

20

0

0

(1) Short-time operation during mismatch.
(2) Continuous operation.

40 80

Fig.3 Power derating curves.

MBK442

(1)

(2)

Th ( °C)

160

120

2003 Sep 18 3

Philips Semiconductors Product specification

UHF power MOS transistor BLF544

CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

I

DSS

I

GSS

V

GSth

∆V

GSth

g

fs

R

DSon

I

DSX

C

is

C

os

C

rs

drain-source breakdown voltage VGS= 0; ID=10mA 65 −− V
drain-source leakage current VGS= 0; VDS=28V −−1mA
gate-source leakage current VGS= ±20 V; VDS=0 −−1 µA
gate-source threshold voltage ID= 40 mA; VDS=10V 1 − 4V
gate-source voltage difference of

ID= 40 mA; VDS=10V −−100 mV

matched pairs
forward transconductance ID= 1.2 A; VDS= 10 V 600 900 − mS
drain-source on-state resistance ID= 1.2 A; VGS=10V − 0.85 1.25 Ω
on-state drain current VGS= 15 V; VDS=10V − 4.8 − A
input capacitance VGS= 0; VDS=28V; f=1MHz − 32 − pF
output capacitance VGS= 0; VDS=28V; f=1MHz − 24 − pF
feedback capacitance VGS= 0; VDS=28V; f=1MHz − 6.4 − pF

VGS group indicator

GROUP

A 2.0 2.1 O 3.3 3.4
B 2.1 2.2 P 3.4 3.5
C 2.2 2.3 Q 3.5 3.6
D 2.3 2.4 R 3.6 3.7
E 2.4 2.5 S 3.7 3.8
F 2.5 2.6 T 3.8 3.9
G 2.6 2.7 U 3.9 4.0
H 2.7 2.8 V 4.0 4.1

J 2.8 2.9 W 4.1 4.2
K 2.9 3.0 X 4.2 4.3
L 3.0 3.1 Y 4.3 4.4

M 3.1 3.2 Z 4.4 4.5
N 3.2 3.3

LIMITS

(V)

GROUP

LIMITS

(V)

MIN. MAX. MIN. MAX.

2003 Sep 18 4

Philips Semiconductors Product specification

UHF power MOS transistor BLF544

handbook, halfpage

4

T.C

(mV/K)

2

0

−2

−4

−2

10

VDS=10V.

−1

10

110

ID (A)

Fig.4 Temperature coefficient of gate-source

voltageasafunctionofdrain current; typical
values.

MDA504

handbook, halfpage

6

I

D

(A)

4

2

0

0

VDS=10V;Tj=25°C.

5

10 20

MDA505

15

V

(V)

GS

Fig.5 Drain current as a function of gate-source

voltage; typical values.

handbook, halfpage

2

R

DSon

(Ω)

1.6

1.2

0.8

0.4

0

050

ID= 1.2 A; VGS=10V.

100 150

Tj (°C)

Fig.6 Drain-source on-state resistance as a

function of junction temperature; typical
values.

MDA506

100

handbook, halfpage

C

(pF)

80

60

40

20

0

010

VGS= 0; f = 1 MHz.

20 30

MDA507

C

is

C

os

V

(V)

DS

Fig.7 Input and output capacitance as functions

of drain-source voltage; typical values.

2003 Sep 18 5

Philips Semiconductors Product specification

UHF power MOS transistor BLF544

40

handbook, halfpage

C

rs

(pF)

30

20

10

0

0102030

VGS= 0; f = 1 MHz.

VDS (V)

Fig.8 Feedback capacitance as a function of

drain-source voltage; typical values.

MDA508

APPLICATION INFORMATION

Th=25°C; R

= 0.4 K/W unless otherwise specified.

th mb-h

RF performance in a common source class-B circuit.

MODE OF OPERATION

f

(MHz)

CW, class-B 500 28 40 20 >11

V

(V)

DS

I

DQ

(mA)

P

(W)

L

G

p

(dB)

η

(%)

D

>50

typ. 14

typ. 60
CW, class-B 960 28 40 20 typ. 7 typ. 50
CW, class-B 960 24 40 15 typ. 7 typ. 50

Ruggedness in class-B operation

The BLF544 is capable of withstanding a full load mismatch corresponding to VSWR = 50 : 1 through all phases under
the following conditions: V

= 28 V; f = 500 MHz at rated output power.

DS

2003 Sep 18 6

Philips Semiconductors Product specification

UHF power MOS transistor BLF544

26

MDA512

PL (W)

20

handbook, halfpage

G

p

(dB)

16

12

8

4

0

10 30

Class-B operation; VDS= 28 V; IDQ=40mA;

= 4.3 + j6.3 Ω; f = 500 MHz.

Z

L

14 18

G

p

η

D

22

Fig.9 Power gain and efficiency as functions of

load power; typical values.

80

η

(%)

60

40

30

D

handbook, halfpage

P

L

(W)

20

10

0

0

Class-B operation; VDS= 28 V; IDQ=40mA;

= 4.3 + j6.3 Ω; f = 500 MHz.

Z

L

1

23

MDA513

PIN (W)

Fig.10 Load power as a function of input power;

typical values.

handbook, full pagewidth

50 Ω
input

f = 500 MHz.

C1

C14

D.U.T.

R4

R1

R2

L3L2

C10

C8C2
L4

C9

C4

L1

C3

C5

C6

C7

R3

L5

BLF544

L6

R5 L7

L8

C11

C12

C13

+V

D

L9

C15 C16

C17

MDA502

50 Ω

output

Fig.11 Test circuit for class-B operation.

2003 Sep 18 7

Philips Semiconductors Product specification

UHF power MOS transistor BLF544

List of components (see Figs 11 and 12).

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C6, C11, C17 multilayer ceramic chip capacitor;

note 1

C2 multilayer ceramic chip capacitor;

note 2
C3, C5 film dielectric trimmer 2 to 9 pF 2222 809 09002
C4 multilayer ceramic chip capacitor;

note 2
C7 multilayer ceramic chip capacitor 2 × 100 nF in

C8, C9 multilayer ceramic chip capacitor;

note 2
C10, C12 multilayer ceramic chip capacitor 100 nF; 50 V 2222 852 47104
C13 electrolytic capacitor 4.7 µF; 63 V 2222 030 38478
C14 multilayer ceramic chip capacitor;

note 1
C15, C16 film dielectric trimmer 2 to 18 pF 2222 809 09003
L1 stripline note 3 50 Ω 9.5 × 2.5 mm
L2 stripline note 3 50 Ω 34.5 × 2.5 mm
L3 stripline note 3 50 Ω 17.5 × 2.5 mm
L4, L5 stripline note 3 42 Ω 3 × 3mm
L6 4 turns enamelled 0.8 mm copper

wire

L7 grade 3B Ferroxcube RF choke 4312 020 36642
L8 stripline note 3 50 Ω 22 × 2.5 mm
L9 stripline note 3 50 Ω 39.5 × 2.5 mm
R1, R2 0.4 W metal film resistor 1 kΩ 2322 151 11002
R3 10 turns cermet potentiometer 50 kΩ
R4 0.4 W metal film resistor 140 kΩ 2322 151 11404
R5 1 W metal film resistor 10 Ω 2322 153 51009

390 pF; 500 V

16 pF; 50 V

27 pF; 50 V

2222 852 47104

parallel; 50 V
39 pF

20 pF; 500 V

31 nH length 7.5 mm

int. dia. 3 mm
leads 2 × 5mm

Notes

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.

3. The striplines are on a double copper-clad printed circuit board, with glass microfibre reinforced PTFE (εr= 2.2);
thickness1⁄32inch.

2003 Sep 18 8

Philips Semiconductors Product specification

UHF power MOS transistor BLF544

handbook, full pagewidth

mounting screw

straps

C2

C1

L1 L2 L3

C3

straps

straps

R3

C7

R2

C10 C6

R1

C4

C8

C9

C5

150

L4

L5

rivets

+V

C13

C11

L6

L8 L9

C15

R5

L7

D

C12

C14

straps

70

mounting screw

C17

C16

Dimensions in mm.

The circuit and components are situated on one side of the printed circuit board, the other side being fully
metallized, toserve as a groundplane. Earth connections aremadeby means ofcopperstraps and hollowrivets
for a direct contact between upper and lower sheets.

Fig.12 Component layout for 500 MHz class-B test circuit.

2003 Sep 18 9

MDA501

Philips Semiconductors Product specification

UHF power MOS transistor BLF544

handbook, full pagewidth

50 Ω
input

f = 960 MHz.

C1

C13 C15 C17

D.U.T.

R1

C8C2

L4

L3L2

C9

C7

C4

L1

C3

C5

C6

R2 R3

L5

BLF544

L6

R4 L7

C10

+V

C11

C12

L8

D

L9 L10

C16C14 C18

MDA503

C19

50 Ω

output

Fig.13 Test circuit for class-B operation.

2003 Sep 18 10

Philips Semiconductors Product specification

UHF power MOS transistor BLF544

List of components (see Figs 12 and 13)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1 multilayer ceramic chip capacitor;

note 1

C2 multilayer ceramic chip capacitor;

note 2
C3, C5, C16, C18 film dielectric trimmer 1.4 to 5.5 pF 2222 809 09001
C4 multilayer ceramic chip capacitor;

note 2
C6 multilayer ceramic chip capacitor 10 nF; 50 V 2222 852 47103
C7, C11 multilayer ceramic chip capacitor;

note 1
C8, C9, C15, C17 multilayer ceramic chip capacitor;

note 2
C10 multilayer ceramic chip capacitor 100 nF; 50 V 2222 852 47104
C12 electrolytic capacitor 4.7 µF; 63 V 2222 030 38478
C13 multilayer ceramic chip capacitor;

note 2
C14 multilayer ceramic chip capacitor;

note 2
C19 multilayer ceramic chip capacitor;

note 1
L1, L8 stripline; note 3 50 Ω 6 × 2.5 mm
L2 stripline; note 3 50 Ω 38 × 2.5 mm
L3 stripline; note 3 50 Ω 17.5 × 2.5 mm
L4, L5 stripline; note 3 42 Ω 3 × 3mm
L6 2 turns enamelled 1 mm copper

wire

L7 grade 3B Ferroxcube RF choke 4312 020 36642
L9 stripline; note 3 50 Ω 21 × 2.5 mm
L10 stripline; note 3 50 Ω 34.5 × 2.5 mm
R1 0.4 W metal film resistor 15 kΩ 2322 151 11473
R2 10 turns potentiometer 50 kΩ
R3 0.4 W metal film resistor 140 kΩ 2322 151 11404
R4 0.4 W metal film resistor 10 Ω 2322 153 51009

68 pF; 500 V

1.6 pF; 50 V

1 pF; 50 V

56 µF; 500 V

6.8 µF; 50 V

16 pF; 50 V

18 pF; 50 V

62 pF; 500 V

16 nH length 3.4 mm

int. dia. 3 mm
leads 2 × 5mm

Notes

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.

3. The striplines are on a double copper-clad printed-circuit board with glass microfibre reinforced PTFE (εr= 2.2);
thickness1⁄32 inch.

2003 Sep 18 11

Philips Semiconductors Product specification

UHF power MOS transistor BLF544

handbook, halfpage

5

Z

i

(Ω)

0

−5

−10

−15

0

Class-B operation; VDS= 28 V; IDQ= 40 mA; PL=20W.

r

i

x

i

200 400 600

MDA509

f (MHz)

Fig.14 Input impedance as a function of frequency

(series components); typical values.

20

handbook, halfpage

Z

L

(Ω)

15

10

5

0

0

Class-B operation; VDS= 28 V; IDQ= 40 mA; PL=20W.

R

L

X

L

200 400 600

MDA510

f (MHz)

Fig.15 Load impedance as a function of frequency

(series components); typical values.

Optimum input and load impedances

30

handbook, halfpage

G

p

(dB)

20

10

0

0

Class-B operation; VDS= 28 V; IDQ= 40 mA; PL=20W.

200

400 600

f (MHz)

Fig.16 Power gain as a function of frequency;

typical values.

MDA511

Optimum input impedance: 1.2 + j4.8 Ω.
Optimum load impedance: 2.6 − j3.1 Ω.
Conditions: class-B operation; VDS=24V;
IDQ= 40 mA; f = 960 MHz; PL= 15 W; typical values.

2003 Sep 18 12

Philips Semiconductors Product specification

UHF power MOS transistor BLF544

BLF544 scattering parameters

VDS= 28 V; ID= 40 mA; note 1

f (MHz)

s

11

s

21

s

12

s

22

|s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ

5 0.99 −14.0 13.60 171.0 0.02 81.0 0.89 −12.8
10 0.98 −27.6 13.20 162.0 0.04 72.4 0.87 −25.3
20 0.93 −52.0 11.90 146.0 0.07 57.1 0.82 −48.0
30 0.88 −72.0 10.30 134.0 0.09 44.8 0.77 −66.6
40 0.84 −87.7 8.93 124.0 0.10 35.2 0.72 −81.3
50 0.81 −100.0 7.75 116.0 0.11 27.7 0.68 −93.0
60 0.79 −110.0 6.78 110.0 0.12 21.6 0.66 −102.0
70 0.77 −118.0 6.00 104.0 0.12 16.7 0.64 −109.0
80 0.76 −124.0 5.36 99.8 0.12 12.5 0.63 −115.0
90 0.75 −129.0 4.82 95.9 0.12 8.9 0.62 −120.0

100 0.75 −133.0 4.37 92.3 0.13 5.7 0.61 −124.0
125 0.74 −141.0 3.53 84.7 0.13 −1.1 0.61 −131.0
150 0.74 −147.0 2.94 78.3 0.13 −6.6 0.61 −137.0
175 0.74 −151.0 2.50 72.6 0.12 −11.5 0.62 −140.0
200 0.75 −154.0 2.16 67.5 0.12 −15.8 0.64 −143.0
250 0.77 −159.0 1.67 58.4 0.12 −23.3 0.67 −148.0
300 0.78 −163.0 1.33 50.4 0.11 −29.7 0.70 −151.0

350 0.80 −167.0 1.09 43.1 0.10 −35.3 0.73 −154.0

400 0.82 −169.0 0.91 36.6 0.10 −40.3 0.75 −157.0
450 0.84 −172.0 0.77 30.6 0.09 −44.7 0.78 −160.0
500 0.85 −175.0 0.66 25.1 0.08 −48.6 0.80 −162.0
600 0.89 −179.0 0.50 15.6 0.07 −55.2 0.84 −167.0
700 0.90 177.0 0.39 7.5 0.06 −60.4 0.88 −170.0
800 0.92 173.0 0.32 0.6 0.05 −64.3 0.90 −174.0
900 0.93 169.0 0.26 −5.4 0.04 −67.3 0.92 −177.0

1000 0.94 166.0 0.22 −10.8 0.04 −69.2 0.93 −179.0

Note

1. For more extensive s-parameters see internet:
http://www.semiconductors.philips.com/markets/communications/wirelesscommunication/broadcast.

2003 Sep 18 13

Philips Semiconductors Product specification

UHF power MOS transistor BLF544

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 6 leads SOT171A

D

A

F

D

1

U

1

q

H

1

b

2

H

U

2

Db

9.25

9.04

0.364

0.356

1

D

1

9.27

9.02

0.365

0.355

5.95

5.74

0.234

0.226

A

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

inches

A

6.81

6.07

0.268

0.239

3.18

2.92

0.125

0.115

b

1

2.13

1.88

0.084

0.074

c

0.16

0.07

0.006

0.003

6

345

b

1

e

0 5 10 mm

E

E

1

5.97

5.72

0.235

0.225

e

3.58

0.140

scale

0.120

0.100

C

w

M M

C

2

p

w

M

3

F

H

11.31

3.05

10.54

2.54

0.445

0.415

B

w

M M M

1

H

1

9.27

9.01

0.365

0.355

AB

p

3.43

3.17

0.135

0.125

c

E

1

E

Q

qw

18.42

U

1

24.90

24.63

0.980

0.970

Q

4.32

4.11

0.170

0.162

w

U

1

2

5.97

5.72

0.235

0.225

2

0.250.25 0.51

0.0100.010 0.0200.725

w

3

OUTLINE
VERSION

SOT171A 99-03-29

IEC JEDEC EIAJ

REFERENCES

EUROPEAN

PROJECTION

2003 Sep 18 14

ISSUE DATE

Philips Semiconductors Product specification

UHF power MOS transistor BLF544

DATA SHEET STATUS

LEVEL

DATA SHEET

STATUS

(1)

PRODUCT

STATUS

(2)(3)

DEFINITION

I Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

III Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

DEFINITIONS

DISCLAIMERS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplications will be
suitable for the specified use without further testing or
modification.

Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingthese products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2003 Sep 18 15

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [email protected].

© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
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Printed in The Netherlands 613524/03/pp16 Date of release: 2003 Sep 18 Document order number: 9397 750 11589

SCA75