Philips blf521 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D079

BLF521

UHF power MOS transistor

Product specification
Supersedes data of 1998 Jan 07

2003 Sep 02

Philips Semiconductors Product specification

UHF power MOS transistor BLF521

FEATURES

• High power gain

• Easy power control

• Gold metallization

• Good thermal stability

• Withstands full load mismatch

• Designed for broadband operation.

DESCRIPTION

Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for communications
transmitter applications in the UHF
frequency range.

The transistor is encapsulated in a
4-lead, SOT172D studless package,
with a ceramic cap. All leads are
isolated from the mounting base.

PINNING - SOT172D

PIN CONFIGURATION

ok, halfpage

2

Top view

1

3

g

MBB072

4

MSB007

d

s

Fig.1 Simplified outline and symbol.

CAUTION

This product is supplied in anti-static packing to prevent damage caused by
electrostaticdischargeduringtransportandhandling.Forfurtherinformation,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.

WARNING

PIN DESCRIPTION

1 source
2 gate
3 drain
4 source

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.

QUICK REFERENCE DATA

RF performance at T

MODE OF OPERATION

= 25 °C in a common source test circuit.

amb

f

(MHz)

V

(V)

DS

P

(W)

L

G

p

(dB)

(%)

CW, class-B 500 12.5 2 >10 >50

η

D

2003 Sep 02 2

Philips Semiconductors Product specification

UHF power MOS transistor BLF521

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GS

I

D

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-mb

R

th j-a

drain-source voltage − 40 V
gate-source voltage −±20 V
drain current (DC) − 1A
total power dissipation Tmb≤ 25 °C − 10 W
storage temperature −65 150 °C
junction temperature − 200 °C

thermal resistance from junction to mounting base 17.5 K/W
thermal resistance from junction to ambient; note1 75 K/W

Note

1. Mounted on printed-circuit board; see Fig.12.

handbook, halfpage

5

I

D

(A)

1

0.1
1 10 100

(1)

(2)

MRA989

VDS (V)

16

handbook, halfpage

P

tot

(W)

12

8

4

0

0 40 80 160

MDA486

(2)

(1)

120

Tmb ( °C)

(1) Current in this area may be limited by R
(2) Tmb=25°C.

DSon

.

Fig.2 DC SOAR.

2003 Sep 02 3

(1) Continuous operation.
(2) Short-time operation during mismatch.

Fig.3 Power derating curves.

Philips Semiconductors Product specification

UHF power MOS transistor BLF521

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

I

DSS

I

GSS

V

GSth

g

fs

R

DSon

I

DSX

C

is

C

os

C

rs

drain-source breakdown voltage VGS= 0; ID= 3 mA 40 −−V
drain-source leakage current VGS= 0; VDS= 12.5 V −−10 µA
gate-source leakage current VGS= ±20 V; VDS=0 −−1µA
gate-source threshold voltage ID= 3 mA; VDS=10V 2 − 4.5 V
forward transconductance ID= 0.3 A; VDS= 10 V 80 135 − mS
drain-source on-state resistance ID= 0.3 A; VGS=15V − 3.5 4 Ω
on-state drain current VGS= 15 V; VDS=10V − 1.3 − A
input capacitance VGS=0;VDS= 12.5 V; f = 1 MHz − 5.3 − pF
output capacitance VGS=0;VDS= 12.5 V; f = 1 MHz − 7.8 − pF
feedback capacitance VGS=0;VDS= 12.5 V; f = 1 MHz − 1.8 − pF

VGS group indicator

GROUP

A 2.0 2.1 O 3.3 3.4
B 2.1 2.2 P 3.4 3.5
C 2.2 2.3 Q 3.5 3.6
D 2.3 2.4 R 3.6 3.7
E 2.4 2.5 S 3.7 3.8
F 2.5 2.6 T 3.8 3.9
G 2.6 2.7 U 3.9 4.0
H 2.7 2.8 V 4.0 4.1

J 2.8 2.9 W 4.1 4.2
K 2.9 3.0 X 4.2 4.3
L 3.0 3.1 Y 4.3 4.4

M 3.1 3.2 Z 4.4 4.5
N 3.2 3.3

LIMITS

(V)

GROUP

LIMITS

(V)

MIN. MAX. MIN. MAX.

2003 Sep 02 4

Philips Semiconductors Product specification

UHF power MOS transistor BLF521

15

handbook, halfpage

T.C

(mV/K)

10

5

0

−5
1

VDS=10V.

10 10

2

ID (A)

Fig.4 Temperature coefficient of gate-source

voltageasafunctionofdraincurrent;typical
values.

MDA485

1600

handbook, halfpage

I

D

(mA)

1200

800

400

3

10

0

04 20

VDS=10V;Tj=25°C.

81216

MDA484

VGS (V)

Fig.5 Drain current as a function of gate-source

voltage; typical values.

120

MDA483

Tj (°C)

160

handbook, halfpage

5

R

DSon

(Ω)

4

3

2

1

0

04080

ID= 0.3 A; VGS=15V.

Fig.6 Drain-source on-state resistance as a

function of junction temperature; typical
values.

2003 Sep 02 5

30

handbook, halfpage

C

(pF)

20

10

0

0

VGS= 0; f = 1 MHz.

C

os

C

is

4

816

MDA482

12

V

(V)

DS

Fig.7 Input and output capacitance as functions

of drain-source voltage; typical values.

Philips Semiconductors Product specification

UHF power MOS transistor BLF521

handbook, halfpage

5

C

rs

(pF)

4

3

2

1

0

048

VGS= 0; f = 1 MHz.

12

VDS (V)

Fig.8 Feedback capacitance as a function of

drain-source voltage; typical values.

MDA481

16

APPLICATION INFORMATION FOR CLASS-B OPERATION

T

=25°C; RGS= 274 Ω, unless otherwise specified.

amb

RF performance in a common source class-B test circuit.

MODE OF OPERATION

f

(MHz)

CW, class-B 500 12.5 10 2 > 10

V

(V)

DS

I

DQ

(mA)

P

(W)

L

G

p

(dB)

η

(%)

D

> 50

typ. 13

typ. 60

Ruggedness in class-B operation

The BLF521 is capable of withstanding a load mismatch corresponding to VSWR = 50:1 through all phases under the
following conditions: V

= 15.5 V; f = 500 MHz at rated output power.

DS

2003 Sep 02 6

Philips Semiconductors Product specification

UHF power MOS transistor BLF521

20

handbook, halfpage

G

p

(dB)

16

12

8

4

0

0.5 1.5

Class-B operation; VDS= 12.5 V; IDQ=10mA;

= 9.5 + j12.8; f = 500 MHz.

Z

L

G

p

η

D

2.5 3.5

MDA480

PL (W)

Fig.9 Power gain and efficiency as functions of

load power; typical values.

100

η

(%)

80

60

40

20

0

D

handbook, halfpage

4

P

L

(W)

3

2

1

0

0 0.2 1.0

Class-B operation; VDS= 12.5 V; IDQ= 20 mA;

= 9.5 + j12.8; f = 175 MHz.

Z

L

0.4 0.6 0.8

MDA479

PIN (W)

Fig.10 Load power as a function of input power;

typical values.

handbook, full pagewidth

D.U.T.

R1

C7

R2

R3

R4 R5

f = 500 MHz.

50 Ω
input

L1 L2 L3

C1

C2

C3

C4

L4

C6

Fig.11 Test circuit for class-B operation.

2003 Sep 02 7

BLF521

C8C5

L5

C12

L8 L10L9

L6

R6

L7

C9

C10

+V

D

C11

C14C13

MDA475

C15

50 Ω

output

Philips Semiconductors Product specification

UHF power MOS transistor BLF521

List of components class-AB test circuit (see Fig.12)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C5, C8,
C15

C2, C13 film dielectric trimmer 2 to 9 pF 2222 809 09002
C3 multilayer ceramic chip capacitor; note 2 5.6 pF, 500 V
C4 film dielectric trimmer 2 to 18 pF 2222 809 09003
C6, C11 multilayer ceramic chip capacitor 2 × 100 nF in

C7, C9 multilayer ceramic chip capacitor 100 nF, 50 V 2222 852 47104
C10 electrolytic capacitor 10 µF, 63 V 2222 030 38109
C12 multilayer ceramic chip capacitor; note 2 9.1 pF, 50 V
C14 film dielectric trimmer 1.4to 5.5 pF 2222 809 09001
L1 stripline; note 3 83 Ω 20 × 2mm
L2 stripline; note 3 83 Ω 21 × 2mm
L3 stripline; note 3 83 Ω 19 × 2mm
L4, L5 stripline; note 3 67 Ω 12 × 3mm
L6 5 turns enamelled 0.5 mm copper wire 62 nH length 3.75 mm

L7 grade 3B Ferroxcube RF choke 4312 020 36642
L8 stripline; note 3 83 Ω 18.6 × 2mm
L9 stripline; note 3 83 Ω 31.6 × 2mm
L10 stripline; note 3 83 Ω 2 × 2mm
R1 0.4 W metal film resistor 274 Ω 2322 151 72741
R2 0.4 W metal film resistor 1.96 kΩ 2322 151 71962
R3 0.4 W metal film resistor 1 MΩ 2322 151 71005
R4 cermet potentiometer 5 kΩ
R5 0.4 W metal film resistor 7.5 kΩ 2322 151 77502
R6 1 W metal film resistor 10 Ω 2322 153 51009

multilayer ceramic chip capacitor; note 1 390 pF, 500 V

2222 852 47104

parallel, 50 V

int. dia. 3 mm
leads 2 × 4mm

Notes

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.

3. The striplines are on a double copper-clad printed-circuit board, with PTFE fibre-glass dielectric (εr= 2.2),
thickness 1.6 mm.

2003 Sep 02 8

Philips Semiconductors Product specification

UHF power MOS transistor BLF521

ndbook, full pagewidth

C1

handbook, full pagewidth

C11

C8

+V

DS

C9

C10

R6

L5

L7

L6

C12

L8

C13

L9

C15

L10

C14

MBA381

R4

R3

C5

R2

C6

C3

L1

C2

L2

C4

C7

L3

R1

L4

150 mm

rivets

strap

strap

rivets

mounting

screws

(6x)

The circuit and components are situated on one side of the printed-circuit board, the other side being fully
metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets
for a direct contact between upper and lower sheets.

Fig.12 Component layout for 500 MHz test circuit.

2003 Sep 02 9

rivets

strap

strap

MBA380

70

mm

Philips Semiconductors Product specification

UHF power MOS transistor BLF521

400

MDA478

f (MHz)

50

handbook, halfpage

Z

i

(Ω)

0

−50

−100

100

Class-B operation; VDS= 12.5 V; IDQ=10mA;

= 274 Ω;PL=2W.

R

GS

200

r

i

x

i

300 500

Fig.13 Input impedance as a function of frequency

(series components); typical values per
section.

400

MDA477

f (MHz)

50

handbook, halfpage

Z

L

(Ω)

40

30

R

L

20

10

0

100 200 300

Class-B operation; VDS= 12.5 V; IDQ= 10 mA;

= 274 Ω;PL=2W.

R

GS

X

L

Fig.14 Load impedance as a function of frequency

(series components); typical values.

500

handbook, halfpage

Fig.15 Definition of MOS impedance.

400

MDA476

f (MHz)

500

20

handbook, halfpage

G

p

(dB)

16

12

8

4

Z

i

Z

MBA379

L

0

100 200 300

Class-B operation; VDS= 12.5 V; IDQ= 10 mA;

= 274 Ω;PL=2W.

R

GS

Fig.16 Power gain as a function of frequency;

typical values.

2003 Sep 02 10

Philips Semiconductors Product specification

UHF power MOS transistor BLF521

BLF521 scattering parameters

VDS= 12.5 V; ID= 10 mA.; note 1

f (MHz)

s

11

s

21

s

12

s

22

|s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ

5 1.00 −1.6 4.51 178.5 0.01 88.5 0.98 −2.0
10 1.00 −3.2 4.51 177.0 0.01 87.2 0.98 −4.0
20 1.00 −6.4 4.50 173.9 0.02 84.5 0.98 −8.0
30 1.00 −9.6 4.48 170.9 0.03 81.7 0.98 −12.0
40 0.99 −12.8 4.45 167.9 0.04 79.0 0.97 −16.0
50 0.99 −16.0 4.43 164.9 0.05 76.2 0.97 −19.9
60 0.98 −19.1 4.39 161.9 0.06 73.5 0.97 −23.8
70 0.97 −22.1 4.34 158.9 0.07 70.9 0.96 −27.6
80 0.97 −25.1 4.28 156.1 0.08 68.3 0.96 −31.3
90 0.96 −28.0 4.22 153.3 0.08 65.8 0.95 −34.9

100 0.95 −30.9 4.16 150.5 0.09 63.3 0.94 −38.5
125 0.92 −37.9 4.00 144.0 0.11 57.5 0.93 −47.1
150 0.90 −44.3 3.83 137.6 0.13 51.8 0.91 −55.2
175 0.87 −50.4 3.64 131.8 0.14 46.7 0.89 −62.7
200 0.85 −56.0 3.46 126.5 0.15 42.2 0.88 −69.6
250 0.80 −66.2 3.12 116.4 0.17 33.4 0.85 −81.9
300 0.77 −75.1 2.81 108.0 0.18 26.4 0.82 −92.3
350 0.74 −82.9 2.54 100.1 0.19 19.8 0.81 −101.3
400 0.72 −89.7 2.31 93.5 0.19 14.4 0.79 −108.9
450 0.70 −95.9 2.10 87.1 0.19 9.5 0.79 −115.5
500 0.69 −101.5 1.93 81.4 0.19 4.9 0.78 −121.2
600 0.69 −111.3 1.64 71.2 0.19 −2.6 0.78 −130.7
700 0.69 −119.9 1.41 62.2 0.18 −8.7 0.77 −138.5
800 0.69 −127.9 1.23 54.3 0.17 −13.6 0.78 −145.2
900 0.70 −135.1 1.08 47.3 0.15 −17.7 0.78 −151.4

1000 0.72 −142.0 0.97 40.9 0.14 −21.1 0.79 −156.9

Note

1. For more extensive s-parameters see internet:
http://www.semiconductors.philips.com/markets/communications/wirelesscommunication/broadcast

2003 Sep 02 11

Philips Semiconductors Product specification

UHF power MOS transistor BLF521

PACKAGE OUTLINE

Studless ceramic package; 4 leads SOT172D

D

A

Q

D

1

H
b

c

4

b

1

H

1

2

0 5 10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

inches

A

3.71

2.89

0.146

0.114

3.31

3.04

0.13

0.12

b

0.89

0.63

0.035

0.025

c

1

0.16

0.10

0.006

0.004

Db

5.20

4.95

0.205

0.195

D

5.33

5.08

0.210

0.200

H

1

26.17

24.63

1.03

0.97

Q

1.15

0.88

0.045

0.035

3

OUTLINE
VERSION

SOT172D

IEC JEDEC EIAJ

REFERENCES

2003 Sep 02 12

EUROPEAN

PROJECTION

ISSUE DATE

97-06-28

Philips Semiconductors Product specification

UHF power MOS transistor BLF521

DATA SHEET STATUS

LEVEL

DATA SHEET

STATUS

(1)

PRODUCT

STATUS

(2)(3)

DEFINITION

I Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

III Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

DEFINITIONS

DISCLAIMERS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.

Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to resultin personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2003 Sep 02 13

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [email protected].

© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 613524/05/pp14 Date of release:2003 Sep 02 Document order number: 9397 750 11587

SCA75