Philips blf4g20ls-130 Datasheet

BLF4G20LS-130

UHF power LDMOS transistor

Rev. 01 — 1 June 2007 Product data sheet

1. Product profile

1.1 General description

130 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.

Table 1. Typical performance

T

= 25°C; IDq = 900 mA; unless otherwise specified; in a class-AB production test circuit.

case

Mode of operation f V

(MHz) (V) (W) (W) (dB) (%) (dBc) (dBc) (%) (dBc)

CW 1930 to 1990 28 130 - 14.5 50 - - - ­GSM EDGE 1930 to 1990 28 - 60 14.8 36 −62
2-tone 1930 to 1990 28 - 65 14.6 38.5 - - - −30

DS

P

L

P

L(AV)Gp

η

ACPR

D

[1]

400

ACPR

[1]

−73

600

EVM

rms

2.1 -

IMD3

[1] ACPR

CAUTION

and ACPR

400

at 30 kHz resolution bandwidth.

600

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.

1.2 Features

n Typical GSMEDGE performance at frequencies of 1990 MHz, a supply voltageof 28 V

and an IDq of 900 mA:

u Average output power = 60 W
u Power gain = 14.8 dB
u Efficiency = 36 %
u ACPR
u ACPR

u EVM
n Easy power control
n Excellent ruggedness
n High efficiency
n Excellent thermal stability
n Designed for broadband operation (1800 MHz to 2000 MHz)
n Internally matched for ease of use

400
600

= 2.1 %

rms

= −62 dBc
= −73 dBc

NXP Semiconductors

1.3 Applications

n RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multi carrier

applications in the 1800 MHz to 2000 MHz frequency range.

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Symbol

1 drain
2 gate
3 source

[1] Connected to flange

3. Ordering information

BLF4G20LS-130

UHF power LDMOS transistor

1

[1]

3

2

2

sym112

1

3

Table 3. Ordering information

Type number Package

BLF4G20LS-130 - earless flanged LDMOST ceramic package; 2 leads SOT502B

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

GS

I

D

T

stg

T

j

Name Description Version

drain-source voltage - 65 V
gate-source voltage −0.5 +15 V
drain current - 15 A
storage temperature −65 +150 °C
junction temperature - 200 °C

BLF4G20LS-130_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 1 June 2007 2 of 11

NXP Semiconductors

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Max Unit

R

th(j-case)

thermal resistance from junction
to case

6. Characteristics

Table 6. Characteristics

Tj = 25°C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V

(BR)DSS

V

GS(th)

V

GSq

I

DSS

I

DSX

I

GSS

g

fs

R

DS(on)

C

rs

drain-source breakdown
voltage

gate-source threshold voltage VDS= 10 V; ID= 230 mA 2.5 2.9 3.5 V
gate-source quiescent voltage VDS= 28 V; ID= 900 mA 2.65 3.15 3.65 V
drain leakage current VGS=0V; VDS=28V - - 5 µA
drain cut-off current VGS=V

gate leakage current VGS= 15 V; VDS= 0 V - - 420 nA
forward transconductance VDS=10V; ID= 7.5 A - 11 - S
drain-source on-state

resistance
feedback capacitance VGS=0V; VDS=28V;

BLF4G20LS-130

UHF power LDMOS transistor

T

=80°C;

case

=50W

P

L

VGS=0V; ID= 2.1 mA 65 - - V

+6 V;

DS

= 7.5 A

D

GS(th)

=10V

GS(th)

+ 6 V;

V

VGS=V
I

f= 1MHz

0.49 0.58 K/W

35 42 - A

- 0.065 - Ω

-3-pF

7. Application information

Table 7. Application information

Mode of operation: 2-tone (200 kHz tone spacing); f1= 1930 MHz; f2= 1990 MHz; VDS=28V;
I

= 900 mA; T

Dq

Symbol Parameter Conditions Min Typ Max Unit

G
RL

η

p

in

D

power gain P
input return loss P
drain efficiency P

IMD3 third order intermodulation

distortion
IMD5 fifth order intermodulation distortion P
IMD7 seventh order intermodulation

distortion

7.1 Ruggedness in class-AB operation

The BLF4G20LS-130 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS=28V;
IDq= 900 mA; PL = 130 W (CW); f = 1990 MHz.

BLF4G20LS-130_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 1 June 2007 3 of 11

=25°C; unless otherwise specified.

case

L(PEP)
L(PEP)
L(PEP)

P

L(PEP)

L(PEP)

P

L(PEP)

= 130 W 13 14.6 - dB
= 130 W - −10 −7dB
= 130 W 34.5 38.5 - %
= 130 W - −30 −27 dBc

= 130 W - −39.5 −35.5 dBc
= 130 W - −58.5 −54 dBc

NXP Semiconductors

7.2 One-tone CW

BLF4G20LS-130

UHF power LDMOS transistor

16

G

p

(dB)

14

12

10

0 16012040 80

VDS = 28 V; IDq = 900 mA; T

G

p

η

D

= 25 °C; f = 1990 MHz.

case

001aag526

PL (W)

60

η

D

(%)

40

20

0

Fig 1. One-tone CW power gain and drain efficiency as functions of load power;

typical values

BLF4G20LS-130_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 1 June 2007 4 of 11

NXP Semiconductors

7.3 Two-tone CW

BLF4G20LS-130

UHF power LDMOS transistor

16

G

p

(dB)

15

14

13

12

11

0 1008040 6020

VDS = 28 V; IDq = 900 mA; T

001aag527

G

p

η

D

PL (W)

= 25 °C;

case

50

η

D

(%)

40

30

20

10

0

f = 1990 MHz.

Fig 2. Two-tone CW power gain and drain efficiency

as functions of load power; typical values

0

IMD3
(dBc)

−20

(1)
(2)

−40

P

= 25 °C;

001aag528

IMD3

IMD5

IMD7

(W)

L(AV)

0

IMD

(dBc)

−20

−40

−60

−80

0 1008040 6020

VDS = 28 V; IDq = 900 mA; T

case

f = 1990 MHz.

Fig 3. Intermodulation distortion as a function of

average load power; typical values

001aag529

(3)
(4)

P

(W)

L(AV)

VDS = 28 V; T

= 25 °C; f = 1990 MHz.

case

−60

−80

0 1008040 6020

(1) IDq = 800 mA.
(2) IDq = 900 mA.
(3) IDq = 1000 mA.
(4) IDq = 1100 mA.

Fig 4. Third order intermodulation distortion as function of average load power; typical values

BLF4G20LS-130_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 1 June 2007 5 of 11

NXP Semiconductors

7.4 GSM EDGE

BLF4G20LS-130

UHF power LDMOS transistor

16

G

p

(dB)

15

14

13

12

11

0 1008040 6020

VDS = 28 V; IDq = 900 mA; T

001aag530

G

p

η

D

PL (W)

= 25 °C;

case

50

η

D

(%)

40

30

20

10

0

f = 1990 MHz.

Fig 5. GSM EDGE power gain and drain efficiency as

functions of load power; typical values

16

EVM

(%)

12

001aag532

EVM

M

−50

ACPR

(dBc)

−60

−70

−80

0 1008040 6020

VDS = 28 V; IDq = 900 mA; T

ACPR

ACPR

400

600

case

001aag531

PL (W)

= 25 °C;

f = 1990 MHz.

Fig 6. GSM EDGE ACPR at 400 kHz and at 600 kHz as

functions of load power; typical values

−54

ACPR

(dBc)

−58

001aag533

5

EVM
(%)

4

−62

8

−66

EVM

4

0

0 1008040 6020

VDS= 28 V; IDq= 850 mA; T

case

=25°C;

f = 960 MHz.

Fig 7. GSM EDGE rms EVM and peak EVM as

functions of load power; typical values

BLF4G20LS-130_1 © NXP B.V. 2007. All rights reserved.

rms

PL (W)

−70

−74

0604020

VDS=28V; IDq= 850 mA; T
f = 960 MHz.

Fig 8. GSM EDGE ACPR and rms EVM as functions of

drain efficiency; typical values

ACPR

EVM

rms

400

case

ηD (%)

=25°C;

3

2

1

0

Product data sheet Rev. 01 — 1 June 2007 6 of 11

NXP Semiconductors

8. Test information

BLF4G20LS-130

UHF power LDMOS transistor

C10

VDD

C2

C7

R1

C3

W1

C9

C1

C4

BLF4G20LS-130

Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) (εr = 3.5); thickness = 0.76 mm.
See Table 8 for list of components.

input - PCS rev. 1

C5

BLF4G20LS-130

output - PCS rev. 1

Fig 9. Component layout for 1930 MHz to 1990 MHz production test circuit

Table 8. List of components (see Figure 9)

Component Description Value Dimensions Remarks

C1, C3, C5, C7 chip capacitor 11 pF

[1]

C2, C9 tantalum capacitor 10 µF
C4 chip capacitor 0.8 pF
C6 chip capacitor 0.1 pF
C8 American Technical Ceramics

1 µF 1812X7R105KL2AB

[1]
[1]

(ATC) chip capacitor
C10 Philips electrolytic capacitor 220 µF; 35 V
R1 Philips chip resistor 5.1Ω 0603
W1 hand made wire 5 mm

C6

001aag534

[1] American Technical Ceramics type 100B or capacitor of same quality.

BLF4G20LS-130_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 1 June 2007 7 of 11

NXP Semiconductors

BLF4G20LS-130

UHF power LDMOS transistor

9. Package outline

Earless flanged LDMOST ceramic package; 2 leads SOT502B

D

A

F

3

D

1

U

1

L

H

U

2

1

D

c

E

1

E

2

b

w

M M

D

2

0 5 10 mm

scale

Q

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

inches

A

4.72

3.43

0.186

0.135

OUTLINE
VERSION

SOT502B

12.83

12.57

0.505

0.495

c

0.15

0.08

0.006

0.003

IEC JEDEC JEITA

Db

20.02

19.61

0.788

0.772

D

1

19.96

19.66

0.786

0.774

EE

9.53

9.50

9.25

9.30

0.375

0.374

0.364

0.366

REFERENCES

H

F

1

19.94

1.14

18.92

0.89

0.785

0.045

0.745

0.035

L

5.33

4.32

0.210

0.170

Q

1.70

1.45

0.067

0.057

U

1

20.70

20.45

0.815

0.805

U

9.91

9.65

0.390

0.380

2

w

2

0.25

0.010

EUROPEAN

PROJECTION

ISSUE DATE

03-01-10
07-05-09

Fig 10. Package outline SOT502B

BLF4G20LS-130_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 1 June 2007 8 of 11

NXP Semiconductors

10. Abbreviations

Table 9. Abbreviations

Acronym Description

ACPR Adjacent Channel Power Ratio
CDMA Code Division Multiple Access
CW Continuous Wave
EDGE Enhanced Data rates for GSM Evolution
EVM Error Vector Magnitude
GSM Global System for Mobile communications
LDMOS Laterally Diffused Metal Oxide Semiconductor
LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor
RF Radio Frequency
RMS Root Mean Square
VSWR Voltage Standing Wave Ratio

BLF4G20LS-130

UHF power LDMOS transistor

11. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLF4G20LS-130_1 20070601 Product data sheet - -

BLF4G20LS-130_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 1 June 2007 9 of 11

NXP Semiconductors

12. Legal information

12.1 Data sheet status

BLF4G20LS-130

UHF power LDMOS transistor

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product statusof device(s) describedin this document may have changedsince this document was published and may differ incase of multipledevices. The latestproduct status

information is available on the Internet at URL

[1][2]

Product status

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information includedhereinand shall have noliability for the consequencesof
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with thesameproduct type number(s) and title.A short data sheet is intended
for quickreference only and should not be relied upon to contain detailedand
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors doesnotgive any representations or
warranties, expressedor implied, as to the accuracy or completenessofsuch
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedesandreplacesall information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or

[3]

http://www.nxp.com.

Definition

malfunction ofaNXP Semiconductors product canreasonably be expectedto
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute MaximumRatingsSystemof IEC 60134) may cause permanent
damage to thedevice. Limiting values are stressratingsonly and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.

12.4 Trademarks

Notice: Allreferenced brands, productnames,service names and trademarks
are the property of their respective owners.

13. Contact information

For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]

BLF4G20LS-130_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 1 June 2007 10 of 11

NXP Semiconductors

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Application information. . . . . . . . . . . . . . . . . . . 3

7.1 Ruggedness in class-AB operation. . . . . . . . . . 3

7.2 One-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4

7.3 Two-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 5

7.4 GSM EDGE . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 9

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

13 Contact information. . . . . . . . . . . . . . . . . . . . . 10

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

BLF4G20LS-130

UHF power LDMOS transistor

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2007. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

Document identifier: BLF4G20LS-130_1

Date of release: 1 June 2007