Philips blf4g20ls-110b Datasheet

Download

Page 1

BLF4G20LS-110B

UHF power LDMOS transistor

Rev. 01 — 10 January 2006 Product data sheet

1. Product proﬁle

1.1 General description

110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Table 1: Typical performance

f = 1930 MHz to 1990 MHz; T production test circuit; typical values

Mode of operation V

CW 28 100 13.4 49 - - GSM EDGE 28 48 (AV) 13.8 38.5 −61

=25°C; IDq= 650 mA; unless otherwise speciﬁed; in a class-AB

case

(V)

(W)

(dB)

(%)

ACPR (dBc)

[1]

400

ACPR (dBc)

[2]

−74

600

EVM (%)

2.1

rms

CAUTION

[1] ACPR [2] ACPR

at 30 kHz resolution bandwidth.

400

at 30 kHz resolution bandwidth.

600

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

1.2 Features

■ Typical GSM EDGE performance at a frequency of 1930 MHz and 1990 MHz, a

supply voltage of 28 V and an IDq of 650 mA:

◆ Load power = 48 W (AV)

◆ Gain = 13.8 dB (typ)

◆ Efﬁciency = 38.5 % (typ)

◆ ACPR

◆ EVM

■ Easy power control

■ Excellent ruggedness

■ High efﬁciency

■ Excellent thermal stability

■ Designed for broadband operation (1800 MHz to 2000 MHz)

■ Internally matched for ease of use

= −61 dBc (typ)

400

= −74 dBc (typ)

600

= 2.1 % (typ)

rms

Page 2

Philips Semiconductors

1.3 Applications

■ RF power ampliﬁers for GSM, GSM EDGE and CDMA base stations and multicarrier

applications in the 1800 MHz to 2000 MHz frequency range.

2. Pinning information

Table 2: Pinning

Pin Description Simpliﬁed outline Symbol

1 drain 2 gate 3 source

[1] Connected to ﬂange

3. Ordering information

BLF4G20LS-110B

UHF power LDMOS transistor

[1]

sym039

Table 3: Ordering information

Type number Package

BLF4G20LS-110B - earless ﬂanged LDMOST ceramic package; 2 leads SOT502B

4. Limiting values

Table 4: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

stg

drain-source voltage - 65 V gate-source voltage −0.5 +15 V drain current - 12 A storage temperature −65 +150 °C junction temperature - 200 °C

5. Thermal characteristics

Table 5: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-case)

thermal resistance from junction to case

Name Description Version

=80°C

case

= 40 W - 0.62 0.71 K/W

= 100 W - 0.52 0.61 K/W

Product data sheet Rev. 01 — 10 January 2006 2 of 12

Page 3

Philips Semiconductors

6. Characteristics

Table 6: Characteristics

Tj=25°C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

(BR)DSS

GS(th)

GSq

DSS

DSX

GSS

DS(on)

BLF4G20LS-110B

UHF power LDMOS transistor

drain-source breakdown voltage VGS=0V; ID= 0.9 mA 65 - - V gate-source threshold voltage VDS= 10 V; ID= 180 mA 2.5 3.1 3.5 V gate-source quiescent voltage VDS= 28 V; ID= 900 mA 2.7 3.2 3.7 V drain leakage current VGS=0V; VDS=28V - - 3 µA drain cut-off current VGS=V

=10V

gate leakage current VGS= ±15 V; VDS= 0 V - - 300 nA forward transconductance VDS=10V; ID=10A - 9.0 - S drain-source on-state resistance VGS=V

=6A

feedback capacitance VGS=0V; VDS=28V;

f=1MHz

GS(th)

+6 V;

27 30 - A

-90-mΩ

- 2.5 - pF

7. Application information

Table 7: Application information

Mode of operation: GSM EDGE; f = 1930 MHz and 1990 MHz; RF performance at VDS=28V; I

= 650 mA; T

Symbol Parameter Conditions Min Typ Max Unit

IRL input return loss P

ACPR

400

ACPR

600

EVM

rms

EVM

7.1 Ruggedness in class-AB operation

The BLF4G20LS-110B is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS=28V; IDq= 650 mA; PL= 110 W (CW); f = 1990 MHz.

case

power gain P

drain efﬁciency P adjacent channel power ratio (400 kHz) P adjacent channel power ratio (600 kHz) P rms EDGE signal distortion error P peak EDGE signal distortion error P

=25°C; unless otherwise speciﬁed; in a class-AB production test circuit.

= 48 W 13 13.8 - dB

L(AV)

=48W - −10 −6.5 dB

L(AV)

= 48 W 36 38.5 - %

L(AV)

=48W - −61 −58 dBc

L(AV)

=48W - −74 −71 dBc

L(AV)

= 48 W - 2.1 3.3 %

L(AV)

= 48 W - 7.0 10 %

L(AV)

Product data sheet Rev. 01 — 10 January 2006 3 of 12

Page 4

Philips Semiconductors

BLF4G20LS-110B

UHF power LDMOS transistor

(dB)

11 20

0 16012040 80

VDS= 28 V; IDq= 650 mA; T

case

001aac387

PL (W)

=25°C;

(%)

f = 1990 MHz

Fig 1. One-tone CW power gain and drain efﬁciency

as functions of load power; typical values

IMD

(dBc)

−20

001aac389

IMD3

=25°C;

001aac388

(W)

L(AV)

(%)

(dB)

0 1008040 6020

VDS=28V; IDq= 650 mA; T

case

f = 1990 MHz

Fig 2. Two-tone CW power gain and drain efﬁciency

as functions of average load power; typical values

IMD3 (dBc)

-20

001aac390

=25°C;

IMD5 IMD7

L(AV)

(W)

-40

-60

-80 0 1008040 6020

VDS=28V; T

(1) IDq= 550 mA

1 2 3 4

=25°C; f = 1990 MHz

case

L(AV)

(W)

−40

−60

−80

0 1008040 6020

VDS= 28 V; IDq= 650 mA; T f = 1990 MHz

case

(2) IDq= 650 mA (3) IDq= 750 mA (4) IDq= 850 mA

Fig 3. Intermodulation distortion as a function of

average load power; typical values

Fig 4. Third order intermodulation distortion as a

function of average load power; typical values

Product data sheet Rev. 01 — 10 January 2006 4 of 12

Page 5

Philips Semiconductors

BLF4G20LS-110B

UHF power LDMOS transistor

(dB)

0806020 40

VDS= 28 V; IDq= 650 mA; T

case

L(AV)

=25°C;

001aac391

(W)

5015

(%)

f = 1990 MHz

Fig 5. GSM EDGE power gain and drain efﬁciency as

functions of average load power; typical values

EVM

001aac393

EVM

(%)

L(AV)

=25°C;

001aac392

(W)

−50

ACPR

(dBc)

−60

ACPR

−70

ACPR

−80

−90

0806020 40

VDS=28V; IDq= 650 mA; T

400

600

case

f = 1990 MHz

Fig 6. GSM EDGE ACPR at 400 kHz and at 600 kHz as

a function of average load power; typical values

−56

ACPR

(dBc)

−60

001aac394

EVM

(%)

EVM

rms

0806020 40

VDS= 28 V; IDq= 650 mA; T

case

L(AV)

=25°C;

(W)

f = 1990 MHz

Fig 7. GSM EDGE rms EVM and peak EVM as

functions of average load power; typical values

−64 ACPR

400

−68 1

EVM

rms

−72

0504020 3010

VDS=28V; IDq= 650 mA; T

case

ηD (%)

=25°C;

f = 1990 MHz

Fig 8. GSM EDGE ACPR at 400 kHz and rms EVM as

functions of drain efﬁciency; typical values

Product data sheet Rev. 01 — 10 January 2006 5 of 12

Page 6

Philips Semiconductors

8. Test information

BLF4G20LS-110B

UHF power LDMOS transistor

C11

C3 C4

C2 C6

input 50 Ω

+ V

See Table 8 for list of components.

Fig 9. Test circuit for operation at 1990 MHz

R1 C4

12.0 mm C1

C8 C9 C10

C5 C7

12.5 mm

W1 C10

C11

output

50 Ω

001aad664

17.6 mm

15.2 mm

BLF4G20 − 110B Input −PCS− Rev 2 BLF4G20 − 110B Output −PCS− Rev 2

001aac395

The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with

εr= 3.5 and thickness = 0.76 mm.

See Table 8 for list of components.

Fig 10. Component layout for 1990 MHz test circuit

Product data sheet Rev. 01 — 10 January 2006 6 of 12

Page 7

Philips Semiconductors

Table 8: List of components (see Figure 10).

Component Description Value Dimensions Catalogue number

C1 multilayer ceramic chip

C2, C4, C8 multilayer ceramic chip

C3, C10 tantalum capacitor 10 µF C5 multilayer ceramic chip

C6 multilayer ceramic chip

C7 multilayer ceramic chip

C9 multilayer ceramic chip

C11 Philips electrolytic

R1 Philips chip resistor 5.6 Ω 0603 W1 hand made wire 5 mm

capacitor

BLF4G20LS-110B

UHF power LDMOS transistor

[1]

0.1 pF

[1]

11 pF

[1]

0.5 pF

[1]

8.2 pF

[1]

0.2 pF

1 µF 1812X7R105KL2AB

220 µF; 35 V

[1] American Technical Ceramics type 100B or capacitor of same quality.

Product data sheet Rev. 01 — 10 January 2006 7 of 12

Page 8

Philips Semiconductors

BLF4G20LS-110B

UHF power LDMOS transistor

9. Package outline

Earless flanged LDMOST ceramic package; 2 leads SOT502B

M M

0 5 10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

inches

4.72

3.43

0.186

0.135

OUTLINE

VERSION

SOT502B

12.83

12.57

0.505

0.495

20.02

19.61

0.788

0.772

19.96

19.66

0.786

0.774

0.15

0.08

0.006

0.003

IEC JEDEC JEITA

9.53

9.50

9.25

9.30

0.374

0.375

0.366

0.364

REFERENCES

0.045

0.035

1.14

0.89

19.94

18.92

0.785

0.745

5.33

4.32

0.210

0.170

1.70

1.45

0.067

0.057

20.70

20.45

0.815

0.805

9.91

9.65

0.390

0.380

0.25

0.010

EUROPEAN

PROJECTION

ISSUE DATE

99-12-28 03-01-10

Fig 11. Package outline SOT502B

Product data sheet Rev. 01 — 10 January 2006 8 of 12

Page 9

Philips Semiconductors

10. Abbreviations

Table 9: Abbreviations

Acronym Description

ACPR Adjacent Channel Power Ratio CDMA Code Division Multiple Access CW Continuous Wave EDGE Enhanced Data rates for GSM Evolution EVM Error Vector Magnitude GSM Global System for Mobile communications I

LDMOS Laterally Diffused Metal Oxide Semiconductor RF Radio Frequency VSWR Voltage Standing Wave Ratio

BLF4G20LS-110B

UHF power LDMOS transistor

quiescent drain current

Product data sheet Rev. 01 — 10 January 2006 9 of 12

Page 10

Philips Semiconductors

BLF4G20LS-110B

UHF power LDMOS transistor

11. Revision history

Table 10: Revision history

Document ID Release date Data sheet status Change notice Doc. number Supersedes

BLF4G20LS-110B_1 20060110 Product data sheet - 9397 750 14548 -

Product data sheet Rev. 01 — 10 January 2006 10 of 12

Page 11

Philips Semiconductors

12. Data sheet status

BLF4G20LS-110B

UHF power LDMOS transistor

Level Data sheet status

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

II Preliminary data Qualiﬁcation This data sheet containsdata from thepreliminary speciﬁcation.Supplementary data will bepublished

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

13. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes norepresentation or warrantythat suchapplications will be suitablefor the speciﬁed use without further testing or modiﬁcation.

[2] [3]

Deﬁnition

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

at a laterdate. Philips Semiconductors reserves theright tochange the speciﬁcation without notice,in order to improve the design and supply the best possible product.

right to make changesat any time in order to improve the design, manufacturing andsupply. Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes norepresentations or warrantiesthat theseproducts are free frompatent, copyright, ormask work right infringement, unlessotherwise speciﬁed.

15. Trademarks

14. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors

Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners.

16. Contact information

For additional information, please visit: http://www.semiconductors.philips.com For sales ofﬁce addresses, send an email to: [email protected]

Product data sheet Rev. 01 — 10 January 2006 11 of 12

Page 12

Philips Semiconductors

17. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Application information. . . . . . . . . . . . . . . . . . . 3

7.1 Ruggedness in class-AB operation. . . . . . . . . . 3

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 9

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

12 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 11

13 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

14 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

16 Contact information . . . . . . . . . . . . . . . . . . . . 11

BLF4G20LS-110B

UHF power LDMOS transistor

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Published in The Netherlands

Date of release: 10 January 2006

Document number: 9397 750 14548