Philips blf4g10-160 Datasheet

BLF4G10-160

UHF power LDMOS transistor

Rev. 01 — 22 June 2007 Product data sheet

1. Product profile

1.1 General description

160 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.

Table 1. Typical performance

RF performance at T

Mode of operation f VDSPLP

CW 894 28 200 - 19.0 59 - - - - - ­2-tone 894 28 - 80 19.7 42.5 - - - - - −29
GSM EDGE 894 28 - 80 19.7 41.5 −61
CDMA 881.5 28 - 40 19.0 29.5 - - −45

= 25°C in a common source class-AB test circuit.

case

L(AV)GpηD

(MHz) (V) (W) (W) (dB) (%) (dBc) (dBc) (dBc) (dBc) (%) (dBc)

ACPR

ACPR

400

[1]

−72

ACPR

600

[1]

- - 3.0 -

ACPR

750

[2]

−64

[2]

EVM

1980

rms

--

IMD3

[1] ACPR
[2] Test signal: IS-95, with PAR =9.9 dB at 0.01 % probability.

CAUTION

and ACPR

400

at 30 kHz resolution bandwidth.

600

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.

1.2 Features

n Typical GSM EDGE performance at f = 894 MHz, VDS = 28 V and IDq = 900 mA:

u Average output power = 80 W
u Gain = 19.7 dB
u Efficiency = 41.5 %
u ACPR
u ACPR

u EVM
n Easy power control
n Excellent ruggedness
n High efficiency
n Excellent thermal stability
n Designed for broadband operation (800 MHz to 1000 MHz)
n Internally matched for ease of use

400
600

= 3.0 %

rms

= −61 dBc
= −72 dBc

NXP Semiconductors

1.3 Applications

n RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multi carrier

applications in the 800 MHz to 1000 MHz frequency range.

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Symbol

1 drain
2 gate
3 source

[1] Connected to flange

3. Ordering information

BLF4G10-160

UHF power LDMOS transistor

1

[1]

2

3

2

sym112

1

3

Table 3. Ordering information

Type number Package

BLF4G10-160 - flanged LDMOST ceramic package; 2 mounting holes; 2

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

GS

I

D

T

stg

T

j

drain-source voltage - 65 V
gate-source voltage −0.5 +15 V
drain current - 15 A
storage temperature −65 +150 °C
junction temperature - 200 °C

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Max Unit

R

th(j-case)

thermal resistance from junction
to case

Name Description Version

SOT502A

leads

T
P

case
L

=80°C;

=50W

0.55 0.64 K/W

BLF4G10-160_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 22 June 2007 2 of 14

NXP Semiconductors

6. Characteristics

Table 6. Characteristics

Tj = 25°C; unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V

(BR)DSS

V

GS(th)

V

GSq

I

DSS

I

DSX

I

GSS

g

fs

R

DS(on)

C

rs

BLF4G10-160

UHF power LDMOS transistor

drain-source breakdown
voltage

gate-source threshold voltage VDS= 10 V; ID= 230 mA 2.5 2.9 3.5 V
gate-source quiescent voltage VDS= 28 V; ID= 900 mA 2.65 3.15 3.65 V
drain leakage current VGS=0V; VDS=28V - - 5 µA
drain cut-off current VGS=V

gate leakage current VGS= 15 V; VDS= 0 V - - 420 nA
forward transconductance VDS=10V; ID= 7.5 A - 11 - S
drain-source on-state

resistance
feedback capacitance VGS=0V; VDS=28V;

VGS=0V; ID= 2.1 mA 65 - - V

V

=10V

DS

VGS=V
I

= 7.5 A

D

GS(th)

GS(th)

+6 V;

+ 6 V;

35 42 - A

- 0.065 - Ω

- 3.0 - pF

f=1MHz

7. Application information

Table 7. Application information

Mode of operation: 2-tone; f1= 894 MHz; f2= 894.2 MHz; RF performance at VDS=28V;
I

= 900 mA; T

Dq

Symbol Parameter Conditions Min Typ Max Unit

G

p

RL

in

η

D

IMD3 third order intermodulation distortion P
IMD5 fifth order intermodulation distortion P
IMD7 seventh order intermodulation distortion P

7.1 Ruggedness in class-AB operation

The BLF4G10-160 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS=28V;
IDq= 900 mA; PL = 160 W (CW); f = 894 MHz.

case

power gain P
input return loss P
drain efficiency P

=25°C; unless otherwise specified; in a class-AB test circuit.

= 160 W 18.5 19.7 - dB

L(PEP)

= 160 W - −10 −6dB

L(PEP)

= 160 W 40 42.5 - %

L(PEP)

= 160 W - −29 −26 dBc

L(PEP)

= 160 W - −38 −35 dBc

L(PEP)

= 160 W - −57 −53 dBc

L(PEP)

BLF4G10-160_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 22 June 2007 3 of 14

NXP Semiconductors

BLF4G10-160

UHF power LDMOS transistor

PL (W)

=25°C;

001aag546

60

η

D

(%)

40

20

0

21

G

p

(dB)

19

17

15

0 24016080

G

p

η

D

VDS= 28 V; IDq= 900 mA; T

case

f = 894 MHz.

Fig 1. One-tone CW power gain and drain efficiency

as functions of load power; typical values

0

IMD

(dBc)

−20

001aag548

IMD3

P

L(AV)

=25°C;

001aag547

(W)

60

η

(%)

40

20

0

22

G

p

(dB)

G

20

18

16

0 1208040

p

η

D

VDS=28V; IDq= 900 mA; T

case

f = 894 MHz.

Fig 2. Two-tone power gain and drain efficiency as

functions of average load power; typical values

0

IMD3
(dBc)

−20

001aag549

D

P

L(AV)

IMD5

IMD7

(W)

−40

−60

−80

0 1208040

VDS= 28 V; IDq= 900 mA; T

case

=25°C;

f = 894 MHz.

Fig 3. Intermodulation distortion a function of

average load power; typical values

−40

−60

−80

0 1208040

VDS=28V; T

1
2

3
4

=25°C; f = 894 MHz.

case

P

L(AV)

(W)

(1) IDq = 800 mA.
(2) IDq = 900 mA.
(3) IDq = 1000 mA.
(4) IDq = 1100 mA.

Fig 4. IMD3 as a function of average load power;

typical values

BLF4G10-160_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 22 June 2007 4 of 14

NXP Semiconductors

BLF4G10-160

UHF power LDMOS transistor

21

G

p

(dB)

20

19

18

17

16

G

p

η

D

0 1008040 6020

VDS= 28 V; IDq= 900 mA; T

case

P

=25°C;

001aag550

L(AV)

(W)

50

η

D

(%)

40

30

20

10

0

f = 894 MHz.

Fig 5. GSM EDGE power gain and drain efficiency as

functions of average load power; typical values

16

EVM

(%)

12

001aag552

P

=25°C;

001aag551

(W)

L(AV)

−50

ACPR

(dBc)

−60

−70

−80

0 1008040 6020

VDS=28V; IDq= 900 mA; T

ACPR

ACPR

400

600

case

f = 894 MHz.

Fig 6. GSM EDGE ACPR at 400 kHz and at 600 kHz as

a function of average load power; typical values

−56

ACPR

(dBc)

−60
ACPR

400

001aag553

4

EVM

(%)

3

8

4

0

0 1008040 6020

VDS= 28 V; IDq= 900 mA; T

EVM

EVM

case

M

rms

=25°C;

P

L(AV)

(W)

f = 894 MHz.

Fig 7. GSM EDGE rms EVM and peak EVM as

functions of average load power; typical values

−64

−68

−72

0604020

EVM

rms

VDS=28V; IDq= 900 mA; T

case

ηD (%)

=25°C;

2

1

0

f = 894 MHz.

Fig 8. GSM EDGE ACPR and rms EVM as functions of

drain efficiency; typical values

BLF4G10-160_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 22 June 2007 5 of 14

NXP Semiconductors

BLF4G10-160

UHF power LDMOS transistor

001aag554

P

L(AV)

(dBm)

G

(dB)

20

p

19

18

17

16

28 484436 4032

G

p

η

D

VDS= 28 V; IDq= 1100 mA; f = 881.5 MHz.
Test signal: IS-95 with PAR = 9.9 dB at 0.01 %
probability.

Fig 9. CDMA power gain and drain efficiency as

functions of average loadpower; typical values,
measured in a CDMA demo test circuit

40

η

D

(%)

30

20

10

0

G

(dB)

20

p

19

18

17

16

28 484436 4032

1

2
3

001aag555

P

L(AV)

(dBm)

VDS=28V; IDq= 1100 mA.
(1) f = 869 MHz.
(2) f = 881.5 MHz.
(3) f = 894 MHz.

Fig 10. CDMA power gain as a function of average load

power at various frequencies; typical values,

measured in a CDMA demo test circuit

001aag556

P

L(AV)

(dBm)

VDS= 28 V; IDq= 1100 mA; T

−35

ACPR

(dBc)

−45

−55

−65

−75

28 484436 4032

=25°C; f = 881.5 MHz.

case

ACPR

ACPR

750

1980

Fig 11. CDMA ACPR at 750 kHz and at 1980 kHz as functions of average load power;typical values, measured in a

CDMA demo test circuit

BLF4G10-160_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 22 June 2007 6 of 14

NXP Semiconductors

8. Test information

V

bias

BLF4G10-160

UHF power LDMOS transistor

V

DD

C6

R1

C5

L6L5

C10

C9C8C7

L3

RF in RF out

C1

L2L1

C2

L4

See Table8 for a list of components

Fig 12. Circuit schematic for 894 MHz production test circuit

+V

bias

L5

L1 L2

C1

C6

R1

C5

L3 L4 L7 L8

C2

L7

L6

L8

C7 C8 C9

C4

L9

C3

V

DD

C3

L10

001aag557

C10

L10

L9

C4

BLF4G10-160

Input-Rev1

BLF4G10-160

Output-Rev1

001aag558

The striplines are on a double copper-clad Rogers 6006 Printed-Circuit Board (PCB) with εr= 6.15 and
thickness = 0.635 mm.

See Table8 for a list of components.

Fig 13. Component layout for 894 MHz production test circuit

BLF4G10-160_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 22 June 2007 7 of 14

NXP Semiconductors

Table 8. List of components (see Figure 12 and Figure 13).

Component Description Value Remarks

C1, C4, C6, C7 multilayer ceramic chip

C2 multilayer ceramic chip

C3 multilayer ceramic chip

C5, C9 tantalum capacitor 10 µF
C8 ceramic capacitor 1 µF 1812X7R105KL2AB
C10 electrolytic capacitor 220 µF
L1 stripline ­L2 stripline ­L3 tapered stripline -

L4 stripline ­L5 stripline ­L6 stripline ­L7 stripline ­L8 tapered stripline -

L9 stripline ­L10 stripline ­R1 SMD resistor 5.1 Ω

capacitor

capacitor

capacitor

68 pF

1.5 pF

1.4 pF

BLF4G10-160

UHF power LDMOS transistor

[1]

[1]

[1]

[2]

(W × L) 0.914 mm × 10.160 mm

[2]

(W × L) 0.914 mm × 24.384 mm

[2]

(W1 × W2 × L)

0.914 mm × 19.812 mm × 11.024 mm

[2]

(W × L) 19.812 mm × 21.438 mm

[2]

(W × L) 0.914 mm × 42.342 mm

[2]

(W × L) 1.524 mm × 42.418 mm

[2]

(W × L) 17.221 mm × 22.479 mm

[2]

(W1 × W2 × L)

17.221 mm × 0.914 mm × 20.625 mm

[2]

(W × L) 0.914 mm × 19.126 mm

[2]

(W × L) 0.914 mm × 6.858 mm

[1] American Technical Ceramics type 100B or capacitor of same quality.
[2] The striplines are on a double copper-clad Rogers 6006 Printed-Circuit Board (PCB) with εr= 6.15 and

thickness = 0.635 mm.

BLF4G10-160_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 22 June 2007 8 of 14

NXP Semiconductors

V

(12 V - 28 V)

bias

Fig 14. Circuit schematic for 869 MHz to 894 MHz CDMA demo test circuit

Q1

C3

C4

R6

R9R10 R7

Q2

RF in RF out

R2

R1

C1

R3

R4

R5

R8

C5

L2L1

C6

L6L5

C7

L3

L4

Q3

C2

See Table9 for a list of components

BLF4G10-160

UHF power LDMOS transistor

VDD(28 V)

C11

C10C9C8

L7

L8

C12

L9

L10

001aag559

(12 V - 28 V)

bias

R9 Q2

R10

C6

L5

C7

L3 L4 L7 L8

C2

Q3

BLF4G10-160

CDMA in

L6

BLF4G10-160

CDMA out

R1

R2

R3

L1 L2

C1

Q1

C3

C4

R6

R5

R7

R4

R8

C5

The other side is unetched and serves as a ground plane.
See Table9 for a list of components.

Fig 15. Component layout for 869 MHz to 894 MHz CDMA demo test circuit

VDD(28 V)V

C8 C9 C10

C11

L10

L9

C12

001aag560

BLF4G10-160_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 22 June 2007 9 of 14

NXP Semiconductors

Table 9. List of components (see Figure 14 and Figure 15).

Component Description Value Remarks

C1, C6, C8 multilayer ceramic chip

C2, C7 multilayer ceramic chip

C3, C4 ceramic capacitor 100 nF
C5, C10 tantalum capacitor 10 µF
C9 ceramic capacitor 1 µF
C11 electrolytic capacitor 2200 µF
C12 multilayer ceramic chip

L1 stripline ­L2 stripline ­L3 tapered stripline -

L4 stripline ­L5 stripline ­L6 stripline ­L7 stripline ­L8 tapered stripline -

L9 stripline ­L10 stripline ­R1, R2 SMD resistor 430 Ω
R3 SMD resistor 300 Ω
R4 potentiometer 200 Ω
R5 SMD resistor 2 kΩ
R6 SMD resistor 1.1 kΩ
R7 SMD resistor 11 kΩ
R8 SMD resistor 5.1 Ω
R9 SMD resistor 5.1 kΩ
R10 SMD resistor 910 Ω
Q1 voltage regulator - 78L08
Q2 transistor - 2N2222
Q3 BLF4G10-160 -

capacitor

capacitor

capacitor

68 pF

1.3 pF

18 pF

BLF4G10-160

UHF power LDMOS transistor

[1]

[1]

[1]

[2]

(W × L) 0.914 mm × 10.160 mm

[2]

(W × L) 0.914 mm × 24.384 mm

[2]

(W1 × W2 × L)

0.914 mm × 19.812 mm × 11.024 mm

[2]

(W × L) 19.812 mm × 21.438 mm

[2]

(W × L) 0.914 mm × 42.342 mm

[2]

(W × L) 1.524 mm × 42.418 mm

[2]

(W × L) 17.221 mm × 22.479 mm

[2]

(W1 × W2 × L)

17.221 mm × 0.914 mm × 20.625 mm

[2]

(W × L) 0.914 mm × 19.126 mm

[2]

(W × L) 0.914 mm × 6.858 mm

[1] American Technical Ceramics type 100B or capacitor of same quality.
[2] The striplines are on a double copper-clad Rogers 6006 Printed-Circuit Board (PCB) with εr= 6.15 and

thickness = 0.635 mm.

BLF4G10-160_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 22 June 2007 10 of 14

NXP Semiconductors

BLF4G10-160

UHF power LDMOS transistor

9. Package outline

Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A

D

A

3

D

1

U

1

q

1

H

U

2

A

2

b

w

M M

C

2

0 5 10 mm

scale

F

B

C

L

p

w

M M M

AB

1

c

E

1

Q

E

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

inches

A

4.72

3.43

0.186

0.135

OUTLINE
VERSION

SOT502A

12.83

12.57

0.505

0.495

c

0.15

0.08

0.006

0.003

IEC JEDEC JEITA

Db

20.02

19.61

0.788

0.772

D

19.96

19.66

0.786

0.774

1

0.374

0.366

EE

1

9.53

9.50

9.25

9.30

0.375

0.364

REFERENCES

F

1.14

0.89

0.045

0.035

H

19.94

18.92

0.785

0.745

L

5.33

4.32

0.210

0.170

p

3.38

3.12

0.133

0.123

qw

Q

1.70

1.45

0.067

0.057

PROJECTION

U

U

1

9.91

34.16

9.65

33.91

0.390

1.345

0.380

1.335

EUROPEAN

w

2

0.25 0.5127.94

0.01 0.021.100

2

1

ISSUE DATE

99-12-28
03-01-10

Fig 16. Package outline SOT502A

BLF4G10-160_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 22 June 2007 11 of 14

NXP Semiconductors

10. Abbreviations

Table 10. Abbreviations

Acronym Description

CDMA Code Division Multiple Access
CW Continuous Waveform
EDGE Enhanced Data GSM Environment
EVM Error Vector Magnitude
GSM Global System for Mobile communications
IS-95 CDMA Interim Standard 95
LDMOS Laterally Diffused Metal Oxide Semiconductor
LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor
PAR Peak-to-Average power Ratio
RF Radio Frequency
RMS Root Mean Square
SMD Surface-Mount Device
VSWR Voltage Standing-Wave Ratio

BLF4G10-160

UHF power LDMOS transistor

11. Revision history

Table 11. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLF4G10-160_1 20070622 Product data sheet - -

BLF4G10-160_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 22 June 2007 12 of 14

NXP Semiconductors

12. Legal information

12.1 Data sheet status

BLF4G10-160

UHF power LDMOS transistor

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document mayhave changed since this document was published and may differ in case of multiple devices.The latest product status

information is available on the Internet at URL

[1][2]

Product status

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall haveno liability for the consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title.Ashort data sheet is intended
for quick referenceonly and should not be relied upon to containdetailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or
warranties, expressedor implied,as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informationsupplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or

[3]

http://www.nxp.com.

Definition

malfunction of a NXP Semiconductorsproductcanreasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134)maycause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyanceor implicationof any license under any copyrights, patents
or other industrial or intellectual property rights.

12.4 Trademarks

Notice: All referencedbrands, product names, service names and trademarks
are the property of their respective owners.

13. Contact information

For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]

BLF4G10-160_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 22 June 2007 13 of 14

NXP Semiconductors

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Application information. . . . . . . . . . . . . . . . . . . 3

7.1 Ruggedness in class-AB operation. . . . . . . . . . 3

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 12

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13 Contact information. . . . . . . . . . . . . . . . . . . . . 13

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

BLF4G10-160

UHF power LDMOS transistor

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2007. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

Date of release: 22 June 2007

Document identifier: BLF4G10-160_1