Philips blf404 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D175

BLF404

UHF power MOS transistor

Product specification
Supersedes data of 1998 Jan 29

2003 Sep 26

Philips Semiconductors Product specification

UHF power MOS transistor BLF404

FEATURES

• High power gain

• Easy power control

• Gold metallization

• Good thermal stability

• Withstands full load mismatch

• Designed for broadband operation.

APPLICATIONS

• Communication transmittersin the VHF/UHF range with
a nominal supply voltage of 12.5 V.

DESCRIPTION

Silicon N-channel enhancement mode vertical D-MOS
powertransistor inan 8-leadSOT409ASMD packagewith
a ceramic cap.

PINNING - SOT409A

PIN DESCRIPTION

1, 8 source
2, 3 gate
4, 5 source
6, 7 drain

halfpage

85

14

Top view

Fig.1 Simplified outline and symbol.

MBK150

d

g

MBB072

s

QUICK REFERENCE DATA

RF performance at Tmb≤ 60 °C in a common source test circuit.

MODE OF OPERATION

f

(MHz)

V

(V)

DS

P

(W)

L

G

(dB)

p

η

D

(%)

CW class-AB 500 12.5 4 ≥10 ≥50

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.

2003 Sep 26 2

Philips Semiconductors Product specification

UHF power MOS transistor BLF404

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GS

I

D

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

drain-source voltage − 40 V
gate-source voltage −±20 V
drain current (DC) − 1.5 A
total power dissipation Tmb≤ 85 °C − 8.3 W
storage temperature −65 +150 °C
junction temperature − 200 °C

thermal resistance from junction to mounting base Tmb≤ 85 °C, P

= 8.3 W 12.1 K/W

tot

10

handbook, halfpage

I

D

(A)

1

−1

10

11010

(1) Current in this area may be limited by R
(2) Tmb=85°C.

Fig.2 DC SOAR.

(2)(1)

V

(V)

DS

.

DSon

MGM522

2

2003 Sep 26 3

Philips Semiconductors Product specification

UHF power MOS transistor BLF404

CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GSth

I

DSS

I

GSS

I

DSX

R

DSon

g

fs

C

is

C

os

C

rs

drain-source breakdown voltage VGS= 0; ID= 5 mA 40 −−V
gate-source threshold voltage ID= 50 mA; VDS=10V 2 − 4.5 V
drain-source leakage current VGS= 0; VDS= 12.5 V −−0.5 mA
gate-source leakage current VGS= ±20 V; VDS=0 −−1µA
on-state drain current VGS= 15 V; VDS=10V − 2.3 − A
drain-source on-state resistance ID= 0.7 A; VGS=15V − 1.8 2.7 Ω
forward transconductance ID= 0.7 A; VDS= 10 V 200 270 − mS
input capacitance VGS= 0; VDS= 12.5 V; f = 1 MHz − 14 − pF
output capacitance VGS= 0; VDS= 12.5 V; f = 1 MHz − 17 − pF
feedback capacitance VGS= 0; VDS= 12.5 V; f = 1 MHz − 3 − pF

VGS group indicator

GROUP

LIMITS

(V)

GROUP

LIMITS

(V)

MIN. MAX. MIN. MAX.

A 2.0 2.1 O 3.3 3.4
B 2.1 2.2 P 3.4 3.5
C 2.2 2.3 Q 3.5 3.6
D 2.3 2.4 R 3.6 3.7
E 2.4 2.5 S 3.7 3.8
F 2.5 2.6 T 3.8 3.9
G 2.6 2.7 U 3.9 4.0
H 2.7 2.8 V 4.0 4.1

J 2.8 2.9 W 4.1 4.2
K 2.9 3.0 X 4.2 4.3
L 3.0 3.1 Y 4.3 4.4

M 3.1 3.2 Z 4.4 4.5
N 3.2 3.3

2003 Sep 26 4

Philips Semiconductors Product specification

UHF power MOS transistor BLF404

25

handbook, halfpage

T.C.

(mV/K)

15

5

−5
10 10

VDS=10V.

2

3

10

ID(mA)

Fig.3 Temperature coefficient of gate-source

voltageas afunctionof drain current;typical
values.

MRA254

handbook, halfpage

4

10

3

I

D

(A)

2

1

0

0

VDS= 10 V; Tj=25°C.

4 8 12 16 20

MRA249

VGS (V)

Fig.4 Drain current as a function of gate-source

voltage; typical values.

handbook, halfpage

5

R

DSon

(Ω)

4

3

2

1

0

0 50 100

ID= 0.7 A; VGS=15V.

Tj (

Fig.5 Drain-source on-state resistance as a

function of junction temperature; typical
values.

MRA253

o

C)

150

V

DS

MRA246

(V)

50

handbook, halfpage

C

(pF)

40

30

20

10

0

0

VGS= 0; f = 1 MHz; Tj=25°C.

C

os

C

is

4 8 12 16

Fig.6 Input and output capacitance as functions

of drain-source voltage; typical values.

2003 Sep 26 5

Philips Semiconductors Product specification

UHF power MOS transistor BLF404

10

handbook, halfpage

C

rs

(pF)

8

6

4

2

0

0481216

VGS= 0; f = 1 MHz; Tj=25°C.

MRA256

VDS (V)

Fig.7 Feedback capacitance as a function of

drain-source voltage; typical values.

APPLICATION INFORMATION

RF performance at Tmb≤ 60 °C in a common source test circuit with the devicesoldered on a printed-circuit board with
through metallized holes.

MODE OF OPERATION

f

(MHz)

V

(V)

DS

I

DQ

(A)

P

(W)

L

G

p

(dB)

η

(%)

D

CW, class-AB 500 12.5 50 4 ≥10 ≥50

typ. 11.5 typ. 55

Ruggedness in class-AB operation

The BLF404 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: f = 500 MHz; V

= 12.5 V; PL= 4 W; Tmb≤ 60 °C.

DS

2003 Sep 26 6

Philips Semiconductors Product specification

UHF power MOS transistor BLF404

η

PL (W)

MGM520

D

G

p

20

handbook, halfpage

G

p

(dB)

16

12

8

4

0

0246

CW, class-AB operation; f = 500 MHz; VDS= 12.5 V;

= 50 mA; Tmb≤ 60 °C.

I

DQ

Fig.8 Powergain anddrainefficiencyas functions

of load power; typical values.

100

(%)

80

60

40

20

0

η

D

handbook, halfpage

6

P

L

(W)

4

2

0

0

CW, class-AB operation; f = 500 MHz; VDS= 12.5 V;

= 50 mA; Tmb≤ 60 °C.

I

DQ

200 400

MGM521

PD (mW)

600

Fig.9 Load power as a function of drive power;

typical values.

C2

+V

D

R4

L2

R5

DUT

C8

handbook, full pagewidth

input
50 Ω

L5

C4

C5

C6

R3

R1R6R2

L6 L7

L3

C7

Fig.10 Test circuit for class-AB operation at f = 500 MHz.

2003 Sep 26 7

L1

C1

C3

C10

L8

L4

L9

C11

C9

L10 L11

C13C12

output

50 Ω

MGM523

Philips Semiconductors Product specification

UHF power MOS transistor BLF404

List of components; see Figs 10 and 11.

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1 electrolytic capacitor 4.7 µF, 10 V
C2, C3 multilayer ceramic chip capacitor 47 nF
C4 multilayer ceramic chip capacitor; note 1 18 pF
C5, C10 multilayer ceramic chip capacitor; note 1 180 pF
C6, C11 multilayer ceramic chip capacitor; note 1 270 pF
C7 multilayer ceramic chip capacitor; note 1 22 pF
C8 multilayer ceramic chip capacitor; note 1 8.2 pF
C9 multilayer ceramic chip capacitor; note 1 2.7 pF
C12 multilayer ceramic chip capacitor; note 1 1.2 pF
C13 multilayer ceramic chip capacitor; note 1 12 pF
L1 2 turns 1 mm enamelled copper wire on

a grade 4B1 Ferroxcube core

L2 3 turns 1 mm enamelled copper wire int. dia. = 4.6 mm

L3 bifilar coil lead dia. = 0.8 mm
L4 bifilar coil lead dia. = 1 mm
L5 stripline; note 2 50 Ω 8.8 × 2.38 mm
L6 stripline; note 2 50 Ω 5.8 × 2.38 mm
L7 stripline; note 2 50 Ω 6.8 × 2.38 mm
L8 stripline; note 2 50 Ω 3.76 × 2.38 mm
L9 stripline; note 2 50 Ω 5.8 × 2.38 mm
L10 stripline; note 2 50 Ω 4.48 × 2.38 mm
L11 stripline; note 2 50 Ω 3.13 × 2.38 mm
R1, R2 SMD resistor 3.9 kΩ
R3 metal film resistor 1 kΩ, 0.25 W
R4 metal film resistor 22 Ω, 0.25 W
R5 metal film resistor 10 kΩ, 0.25 W
R6 potentiometer 10 kΩ

ext. dia. = 4.2 mm
int. dia.=2mm
length = 6 mm

leads = 2 x 5 mm

Notes

1. American Technical Ceramics type 100A or capacitor of same quality.

2. The striplines are on a double copper-clad printed-circuit board, with DUROID dielectric (εr= 2.2);
thickness 0.79 mm, thickness of the copper sheet 2 x 35 µm.

2003 Sep 26 8

Philips Semiconductors Product specification

UHF power MOS transistor BLF404

handbook, full pagewidth

56

31

2

1

3

R6

R1
R2

R3

C2

R5

C5

L5

C6

C4

L3

L6 L8L7 L9 L10

C7

C8

BLF404

+V

D

C1

L1

R4

C3

L2

C9

C10

C11

C12

L11

C13

L4

MGM524

Dimensions in mm.

The components are situated on one side of the copper-clad printed-circuit board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.

Fig.11 Component layout for 500 MHz class-AB test circuit.

2003 Sep 26 9

Philips Semiconductors Product specification

UHF power MOS transistor BLF404

x

i

r

i

f (MHz)

MGM517

handbook, halfpage

8

r

i

(Ω)

6

4

2

0

0 200 400 600

CW, class-AB operation; VDS= 12.5 V; ID=50mA;

= 4 W; Tmb≤ 60 °C.

P

L

Fig.12 Input impedance as a function of frequency

(series components); typical values.

0

x

(Ω)

−20

−40

−60

−80

f (MHz)

MGM518

R

L

X

L

16

handbook, halfpage

i

Z

L

(Ω)

12

8

4

0

0 200 400 600

CW, class-AB operation; VDS= 12.5 V; ID=50mA;

= 4 W; Tmb≤ 60 °C.

P

L

Fig.13 Load impedance as a function of frequency

(series components); typical values.

30

handbook, halfpage

G

p

(dB)

20

10

0

0 200 400 600

CW, class-AB operation; VDS= 12.5 V; IDQ=50mA;

= 4 W; Tmb≤ 60 °C.

P

L

f (MHz)

Fig.14 Power gain as a function of frequency

(series components); typical values.

MGM519

2003 Sep 26 10

Philips Semiconductors Product specification

UHF power MOS transistor BLF404

MOUNTING RECOMMENDATIONS

Both the metallized ground plate and the device leads contribute to the heat flow. It is recommended that the transistor
be mounted on a grounded metallized area of the printed-circuit board. This area should be of maximum 0.8 mm
thickness and include at least 12 x 0.5 diameter through metallized holes filled with solder.

A thermal resistanceR

th(mb-h)

on the printed-circuit board.

handbook, full pagewidth

of 5 K/W canbe achieved if heatsink compound is applied when the transistor is mounted

1.87 (2×)

3.607.38

0.60 (4×)

0.80 (2×)

0.50 (12×)

1.00 (8×)

4.60

Dimensions in mm.

Fig.15 Reflow soldering footprint for SOT409A.

2003 Sep 26 11

1.00 (9×)

MGK390

Philips Semiconductors Product specification

UHF power MOS transistor BLF404

BLF404 scattering parameters

VDS= 12.5 V; ID= 50 mA; note 1.

f (MHz)

s

11

s

21

s

12

s

22

|s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ

5 1.00 −5.2 12.97 176.0 0.01 86.0 0.96 −6.0
10 0.99 −10.1 12.89 171.9 0.02 82.2 0.96 −12.0
20 0.98 −20.6 12.61 164.1 0.03 74.8 0.95 −23.5
30 0.96 −30.4 12.18 156.6 0.05 67.6 0.93 −34.7
40 0.93 −39.6 11.62 149.6 0.06 60.9 0.91 −45.1
50 0.89 −48.0 11.00 143.2 0.07 54.8 0.89 −54.7
60 0.86 −55.8 10.37 137.4 0.08 49.4 0.87 −63.5
70 0.83 −62.9 9.74 132.2 0.09 44.4 0.85 −71.4
80 0.80 −69.4 9.15 127.5 0.10 40.1 0.83 −78.5
90 0.78 −75.3 8.60 123.2 0.10 36.2 0.82 −84.8

100 0.75 −80.7 8.08 119.3 0.10 32.7 0.80 −90.5
125 0.71 −92.2 6.96 110.7 0.11 25.1 0.77 −102.6
150 0.68 −101.4 6.03 103.9 0.12 19.1 0.76 −111.9
175 0.66 −108.9 5.30 98.3 0.12 14.4 0.74 −119.2
200 0.64 −115.2 4.73 93.2 0.12 10.2 0.74 −125.1
250 0.63 −124.9 3.81 84.5 0.12 3.5 0.73 −134.1
300 0.64 −132.5 3.19 77.4 0.12 −1.8 0.74 −140.5

350 0.64 −138.6 2.70 71.2 0.11 −6.1 0.74 −145.3

400 0.66 −143.8 2.34 65.7 0.11 −9.7 0.75 −149.1
450 0.67 −148.4 2.03 60.5 0.10 −12.5 0.76 −152.4
500 0.69 −152.6 1.80 56.0 0.09 −15.1 0.78 −155.2
600 0.72 −160.2 1.44 47.7 0.08 −18.2 0.80 −159.9
700 0.75 −167.1 1.18 40.4 0.07 −18.6 0.82 −163.9
800 0.78 −173.6 0.99 34.4 0.05 −15.0 0.84 −167.5
900 0.81 −179.8 0.84 29.2 0.04 -6.0 0.86 −170.7

1000 0.83 174.3 0.73 25.1 0.04 9.9 0.88 −173.6

Note

1. For more extensive s-parameters see internet:
http://www.semiconductors.philips.com/markets/communications/wirelesscommunications/broadcast

2003 Sep 26 12

Philips Semiconductors Product specification

UHF power MOS transistor BLF404

PACKAGE OUTLINE

Ceramic surface mounted package; 8 leads SOT409A

D

A

D

2

H

1

85

H

14

e

b

0 2.5 5 mm

B

w

B

2

w

1

scale

c

L

E

2

A

α

Q

1

E

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT cbDE

mm

inches

A

2.36

2.06

0.093

0.081

OUTLINE
VERSION

SOT409A

0.58

0.43

0.023

0.017

D

2

0.23

5.94

5.03

0.234

0.198

5.16

5.00

0.203

0.197

0.194

0.158

0.18

0.009

0.007

IEC JEDEC EIAJ

E

4.93

4.14

4.01

3.99

0.163

0.157

REFERENCES

2

1.27

0.050

e

HH

7.47

7.26

0.294

0.286

2003 Sep 26 13

1

4.39

4.24

0.173

0.167

LQ

1.02

0.10

0.51

0.00

0.040

0.004

0.020

0.000

1

0.25

0.010

PROJECTION

w

w

1

0.25

0.010

EUROPEAN

2

α

7°
0°

7°
0°

ISSUE DATE

98-01-27

Philips Semiconductors Product specification

UHF power MOS transistor BLF404

DATA SHEET STATUS

LEVEL

DATA SHEET

STATUS

(1)

PRODUCT

STATUS

(2)(3)

DEFINITION

I Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

III Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For datasheets describingmultiple type numbers,the highest-levelproduct status determinesthe datasheet status.

DEFINITIONS

DISCLAIMERS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting valuesdefinition Limiting values givenare in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese orat any otherconditions abovethosegiven inthe
Characteristics sectionsof the specification isnot implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation orwarranty thatsuchapplications willbe
suitable for the specified use without further testing or
modification.

Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury.Philips
Semiconductorscustomers usingor sellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance. When theproduct isin fullproduction
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2003 Sep 26 14

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [email protected].

© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in thisdocument does not form partof any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 613524/04/pp15 Date of release: 2003 Sep26 Document order number: 9397 75011603

SCA75