Philips blf3g22-30 Datasheet

BLF3G22-30

UHF power LDMOS transistor

Rev. 01 — 21 June 2007 Product data sheet

1. Product profile

1.1 General description

30 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz

Table 1. Typical class-AB RF performance

IDq = 450 mA; Th = 25°C in a common source test circuit.

Mode of operation f

2-tone 2170 2170.1 28 450 36 - 14 34 −24 - ­2-carrier W-CDMA

[1] 3GPP test model 1; 64 channels with 66 % clippings
[2] Measured within 10 kHz bandwidth

[1]

1

(MHz) (MHz) (V) (mA) (W) (W) (dB) (%) (dBc) (dBc) (dBc)

2115 2165 28 450 - 6 15 21 - −42

f

2

V

DSIDq

P

L(PEP)PL(AV)Gp

η

IMD ACPR IMD3

D

[2]

−38

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.

1.2 Features

n Excellent back off linearity
n Typical 2-carrier W-CDMA performance at a supply voltageof 28 V and IDqof 450 mA:

u Average output power=6W
u Gain=15dB
u Efficiency = 21 %
u ACPR = −42 dBc (at 3.84 MHz)

u IMD3 = −38 dBc
n Easy power control
n Excellent ruggedness
n High power gain
n Excellent thermal stability
n Designed for broadband operation (2000 MHz to 2200 MHz)
n Internally matched for ease of use
n ESD protection

NXP Semiconductors

1.3 Applications

n RF power amplifiers for W-CDMA base stations and multicarrier applications in the

2000 MHz to 2200 MHz frequency range

n Broadcast drivers

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Symbol

1 drain
2 gate
3 source

[1] Connected to flange

BLF3G22-30

UHF power LDMOS transistor

2

sym112

1

3

1

[1]

3

2

3. Ordering information

Table 3. Ordering information

Type number Package

BLF3G22-30 - flanged ceramic package; 2 mounting holes; 2 leads SOT608A

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

GS

I

D

T

stg

T

j

drain-source voltage - 65 V
gate-source voltage - ±15 V
drain current - 12 A
storage temperature −65 +150 °C
junction temperature - 200 °C

Name Description Version

BLF3G22-30_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 21 June 2007 2 of 13

NXP Semiconductors

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Unit

R

th(j-case)

[1] Thermal resistance is determined under specified RF operating conditions

thermal resistance from junction to case Th = 25 °C

6. Characteristics

Table 6. Characteristics

Tj = 25°C unless otherwise specified

Symbol Parameter Conditions Min Typ Max Unit

V

(BR)DSS

V

GS(th)

I

DSS

I

DSX

I

GSS

g

fs

R

DS(on)

C

rs

drain-source breakdown voltage VGS=0V; ID= 0.7 mA 65 - - V
gate-source threshold voltage VDS= 10 V; ID= 70 mA 2.0 - 3.0 V
drain leakage current VGS=0V; VDS=26V - - 1.5 µA
drain cut-off current VGS=V

gate leakage current VGS= ±15 V; VDS= 0 V - - 150 nA
forward transconductance VDS=10V; ID= 3.5 A - 3 - S
drain-source on-state resistance VGS=V

feedback capacitance VGS=0V; VDS=26V;

DS

= 2.5 A

D

GS(th)

=10V

GS(th)

V

I

f=1MHz

BLF3G22-30

UHF power LDMOS transistor

[1]

+9 V;

+6 V;

9- - A

- 0.3 - Ω

- 1.7 - pF

1.85 K/W

7. Application information

Table 7. Application information

Symbol Parameter Conditions Min Typ Max Unit

Mode of operation: Two-tone CW (100 kHz tone spacing); f = 2170 MHz; I

G

p

RL

in

η

D

IMD3 third order intermodulation

Mode of operation: Two-tone W-CDMA; 3GPP test model 1; 1 - 64 DPCH with 66 % clipping;

= 2115 MHz; f2= 2165 MHz; IDq = 450 mA

f

1

G

p

RL

in

η

D

IMD3 third order intermodulation

ACPR adjacent channel power ratio P

[1] Measured within 10 kHz bandwidth.

power gain P
input return loss P
drain efficiency P

distortion

power gain P
input return loss P
drain efficiency P

distortion

= 450 mA

Dq

=30W - 14 - dB

L(PEP)

=30W - −15 - dB

L(PEP)

=30W - 33 - %

L(PEP)

P
P

P

=30W - −24 - dBc

L(PEP)

< 6 W - < −50 - dBc

L(PEP)

= 6 W 13 15 - dB

L(AV)

=6W - −10 −8dB

L(AV)

= 6 W 18 21 - %

L(AV)

=6W - −38 −35 dBc

L(AV)

L(AV)

=6W

[1]

- −42 −38 dBc

BLF3G22-30_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 21 June 2007 3 of 13

NXP Semiconductors

7.1 Ruggedness in class-AB operation

The BLF3G22-30 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS=28V;
IDq= 450 mA; PL= 30 W (CW); f = 2170 MHz.

7.2 One-tone

BLF3G22-30

UHF power LDMOS transistor

VDS = 28 V; IDq= 450 mA; Th = 25 °C; f1= 2170 MHz; f2 = 2170.1 MHz

Fig 1. Power gain and drain efficiency as functions of average load power; typical values

7.3 Two-tone

G

(dB)

G

(dB)

20

p

16

12

8

4

0

−1

10

20

p

16

G

p

η

D

G

p

001aag535

101

P

L(AV)

001aag536

(W)

50

η

D

(%)

40

30

20

10

0

2

10

50

η

D

(%)

40

(W)

30

20

10

0

2

10

12

8

4

0

−1

10

η

D

101

P

L(PEP)

VDS = 28 V; IDq= 450 mA; Th = 25 °C; f1= 2170 MHz; f2 = 2170.1 MHz

Fig 2. Power gain and drain efficiency as functions of peak envelope load power; typical

values

BLF3G22-30_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 21 June 2007 4 of 13

NXP Semiconductors

BLF3G22-30

UHF power LDMOS transistor

001aag541

2

101

P

L(PEP)

(W)

10

IMD

(dBc)

−30

−60

−90

0

IMD3

IMD5

IMD7

−1

10

VDS = 28 V; IDq= 450 mA; Th = 25 °C;
f1= 2170 MHz; f2 = 2170.1 MHz

Fig 3. Intermodulation distortion as function of peak

envelope load power; typical values

001aag542

2

101

P

L(PEP)

(W)

10

IMD3
(dBc)

−30

−60

−90

0

(1)
(2)

(3)

−1

10

VDS = 28 V; Th = 25 °C; f1= 2170 MHz;

f2= 2170.1 MHz
(1) IDq = 400 mA
(2) IDq = 450 mA
(3) IDq = 500 mA

Fig 4. IMD3 as function of peak envelope load power;

typical values

BLF3G22-30_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 21 June 2007 5 of 13

NXP Semiconductors

7.4 Two-carrier W-CDMA

Input signals: 3GPP W-CDMA, test model 1, 1-64 DPCH with 66 % clipping;
peak-to-average power ratio: 8.5 dB at 0.01 % probability on CCDF;
channel spacing = 10 MHz; bandwidth = 3.84 MHz.

BLF3G22-30

UHF power LDMOS transistor

20

G

p

(dB)

16

12

8

4

0

26 423830 34

001aag537

G

p

η

D

P

L(AV)

(W)

50

η

D

(%)

40

30

20

10

0

VDS= 28 V; IDq= 450 mA; Th=25°C;
f1= 2115 MHz; f2= 2165 MHz

Fig 5. Power gain and drain efficiency as functions of

average load power; typical values

7.5 Input impedance and load impedances measured under CW conditions

0

IMD3,
ACPR

(dBc)

−20

−40

−60

26 423830 34

IMD3

ACPR

001aag538

P

L(AV)

(W)

VDS=28V; IDq= 450 mA; Th=25°C;
f1= 2115 MHz; f2= 2165 MHz

Fig 6. IMD3 and ACPR as functions of average load

power; typical values.

12

Z

i

(Ω)

8

4

0

2 2.22.152.05 2.1

001aag539

R

i

X

i

f (GHz)

VDS = 28 V; IDq = 450 mA; PL = 30 W; Th≤ 25 °CV

Fig 7. Input impedance as function of frequency

(series components); typical values

BLF3G22-30_1 © NXP B.V. 2007. All rights reserved.

8

Z

L

(Ω)

4

0

−4

−8

2 2.22.152.05 2.1

= 28 V; IDq = 450 mA; PL = 30 W; Th≤ 25 °C

DS

R

L

X

L

Fig 8. Load impedance as function of frequency

(series components); typical values

001aag540

f (GHz)

Product data sheet Rev. 01 — 21 June 2007 6 of 13

NXP Semiconductors

8. Test information

BLF3G22-30

UHF power LDMOS transistor

V

Gate

R1

input
50 Ω

L2

Fig 9. Class-AB test circuit

C7C8 C6

C3

C4

L1

L11

L6

L3

C1

L4 L5

C5

C2

L7 L8 L9 L10

C9

L12

C13 C17 C14 C19 C20

C11

output
50 Ω

C12

C10

C18 C15

C16

mld944

V

DD

BLF3G22-30_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 21 June 2007 7 of 13

NXP Semiconductors

BLF3G22-30

UHF power LDMOS transistor

40 mm

40 mm

BLF3G22-30 testjig input BLF3G22-30 testjig output

R1

C6C8C7

C13

C17

C14

L1

60

mm

C20

C19

C3
C4

BLF3G22-30 testjig input

C5

C1

C2

BLF3G22-30 testjig output

Dimensions in mm.
The components are situated on one side of the copper-clad Printed-Circuit Board (PCB) with

Teflon dielectric (εr = 2.2); thickness = 0.79 mm.
The other side is unetched and serves as a ground plane.
See Table 8 for list of components.

Fig 10. Component layout for 2.17 GHz class-AB test circuit

C18

C16

C15

C10C9

C11
C12

001aag543

BLF3G22-30_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 21 June 2007 8 of 13

NXP Semiconductors

BLF3G22-30

UHF power LDMOS transistor

Table 8. List of components (see Figure 9 and Figure 10)

Component Description Value Dimensions Catalogue No.

C1, C2, C9,
C10

C3, C4, C11,
C12

C5 multilayer ceramic chip capacitor
C6, C7, C13,

C14, C15, C16
C8 tantalum capacitor 10 µF
C17, C18 multilayer ceramic chip capacitor 1.5 µF TDK C3225X7R1H155M
C19 multilayer ceramic chip capacitor
C20 electrolytic capacitor 100 µF; 63 V
L1 handmade; enamelled 1 mm copper

L2 stripline
L3 stripline
L4 stripline
L5 stripline
L6 stripline
L7 stripline
L8 stripline
L9 stripline
L10 stripline
L11, L12 stripline

Tekelec variable capacitor; type 37271 0.6 pF to 4.5 pF

[1]

[1]
[1]

[2]

6.8 pF

2.2 pF
12 pF

1 nF

multilayer ceramic chip capacitor

multilayer ceramic chip capacitor

- 2 loops;

wire

[3]

50 Ω 12 mm × 2.4 mm

[3]

43 Ω 18 mm × 3 mm

[3]

29 Ω 4 mm × 5 mm

[3]

10 Ω 5 mm × 18.4 mm

[3]

56 Ω 34.4 mm × 2 mm

[3]

9 Ω 10 mm × 20 mm

[3]

29 Ω 4 mm × 5 mm

[3]

41 Ω 20 mm × 3.2 mm

[3]

50 Ω 5 mm × 2.4 mm

[3]

17 Ω 24.5 mm × 10 mm

4 mm in diameter

[1] American Technical Ceramics type 100A or capacitor of same quality.
[2] American Technical Ceramics type 100B or capacitor of same quality.
[3] The striplines are on a double copper-clad Printed-Circuit Board (PCB) with Teflon dielectric (εr = 2.2); thickness = 0.79 mm.

BLF3G22-30_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 21 June 2007 9 of 13

NXP Semiconductors

BLF3G22-30

UHF power LDMOS transistor

9. Package outline

Flanged ceramic package; 2 mounting holes; 2 leads SOT608A

D

A

3

D

1

F

U

1

q

B

C

1

H

U

2

A

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

inches

A

4.62

3.76

0.182

0.148

7.24

6.99

0.285

0.275

c

0.15

0.10

0.006

0.004

Db

10.21

10.01

0.402

0.394

D

10.29

10.03

0.405

0.395

1

10.21

10.01

0.402

0.394

2

b

EE

1

10.29

10.03

0.405

0.395

w

M M

2

0 5 10 mm

scale

H

F

15.75

1.14

14.73

0.89

0.620

0.045

0.580

0.035

p

C

p

3.30

2.92

0.130

0.115

c

E

1

w

M M M

AB

1

Q

qw

Q

1.70

1.35

0.067

0.053

U

20.45

20.19

0.805

0.795

1

U

2

9.91

9.65

0.390

0.380

w

2

1

0.25 0.5115.24

0.010 0.0200.600

E

OUTLINE
VERSION

SOT608A

REFERENCES

IEC JEDEC EIAJ

EUROPEAN

PROJECTION

ISSUE DATE

01-02-22
02-02-11

Fig 11. Package outline SOT608A

BLF3G22-30_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 21 June 2007 10 of 13

NXP Semiconductors

10. Abbreviations

Table 9. Abbreviations

Acronym Description

3GPP Third Generation Partnership Project
CCDF Complementary Cumulative Distribution Function
CW Continuous Wave
DPCH Dedicated Physical CHannel
LDMOS Laterally Diffused Metal Oxide Semiconductor
RF Radio Frequency
UHF Ultra High Frequency
VSWR Voltage Standing Wave Ratio
W-CDMA Wideband Code Division Multiple Access

11. Revision history

BLF3G22-30

UHF power LDMOS transistor

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLF3G22-30_1 20070621 Product data sheet - -

BLF3G22-30_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 21 June 2007 11 of 13

NXP Semiconductors

12. Legal information

12.1 Data sheet status

BLF3G22-30

UHF power LDMOS transistor

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The productstatus of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL

[1][2]

Product status

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or

[3]

http://www.nxp.com.

Definition

malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.

12.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.

13. Contact information

For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]

BLF3G22-30_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 21 June 2007 12 of 13

NXP Semiconductors

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Application information. . . . . . . . . . . . . . . . . . . 3

7.1 Ruggedness in class-AB operation. . . . . . . . . . 4

7.2 One-tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

7.3 Two-tone . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

7.4 Two-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . 6

7.5 Input impedance and load impedances

measured under CW conditions . . . . . . . . . . . . 6

8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13 Contact information. . . . . . . . . . . . . . . . . . . . . 12

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

BLF3G22-30

UHF power LDMOS transistor

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2007. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

Date of release: 21 June 2007

Document identifier: BLF3G22-30_1