Philips blf3g21-6 Datasheet

BLF3G21-6

UHF power LDMOS transistor

Rev. 01 — 25 June 2008 Product data sheet

1. Product profile

1.1 General description

6 W LDMOS power transistor for base station applications at frequencies from
HF to 2200 MHz

Table 1. Typical class-AB RF performance

IDq = 90 mA; Th = 25°C in a common source test circuit.

Mode of operation f P

CW 2000 7 12.5 43 - 7
Two-tone 2000 6 15.5 39 −32 -

G

L

(MHz) (W) (dB) (%) (dB) (W)

< 2 15.8 - < −50 -

p

η

D

IMD3 P

L(1dB)

CAUTION

Table 2. Typical class-A RF performance

IDq = 200 mA; Th = 25°C in a modified PHS test fixture.

Mode of operation f P

(MHz) (W) (dB) (%) (dBc)

PHS 1880 to 1920 2 16 20 −75

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.

L(AV)

G

p

1.2 Features

n Excellent back-off linearity
n Typical PHS performance at a supply voltage of 26 V and IDq of 200 mA:

u Average output power=2W
u Power gain = 16 dB
u Efficiency = 20 %

u ACPR
n Easy power control
n Excellent ruggedness
n High power gain
n Excellent thermal stability
n Designed for broadband operation (HF to 2200 MHz)

600k

= −75 dBc

η

ACPR

D

600k

NXP Semiconductors

n No internal matching for broadband operation
n ESD protection

1.3 Applications

n RF power amplifiers for GSM, PHS, EDGE, CDMA and W-CDMA base stations and

multicarrier applications in the HF to 2200 MHz frequency range

n Broadcast drivers

2. Pinning information

Table 3. Pinning

Pin Description Simplified outline Graphic symbol

1 drain
2 gate
3 source

BLF3G21-6

UHF power LDMOS transistor

2

sym112

1

3

1

[1]

3

2

[1] Connected to flange.

3. Ordering information

Table 4. Ordering information

Type number Package

BLF3G21-6 - ceramic surface-mounted package; 2 leads SOT538A

4. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

GS

I

D

T

stg

T

j

drain-source voltage - 65 V
gate-source voltage −0.5 ±13 V
drain current - 2.3 A
storage temperature −65 +200 °C
junction temperature - 200 °C

Name Description Version

BLF3G21-6_1 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 01 — 25 June 2008 2 of 12

NXP Semiconductors

5. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Typ Unit

R

th(j-c)

[1] Thermal resistance is determined under specified RF operating conditions.

thermal resistance from junction to case Th = 25 °C; P

6. Characteristics

Table 7. Characteristics

Tj = 25°C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V

(BR)DSS

V

GS(th)

I

DSS

I

DSX

I

GSS

g

fs

R

DS(on)

C

rs

drain-source breakdown voltage VGS=0V; ID= 0.13 mA 65 - - V
gate-source threshold voltage VDS= 10 V; ID= 13 mA 2.0 2.6 3.0 V
drain leakage current VGS=0V; VDS=28V - - 1 µA
drain cut-off current VGS=V

gate leakage current VGS= ±15 V; VDS= 0 V - - 140 nA
forward transconductance VDS= 10 V; ID= 0.5 A - 0.6 - S
drain-source on-state resistance VGS=V
feedback capacitance VGS=0V; VDS=28V;

DS

GS(th)

=10V

GS(th)

V

f=1MHz

BLF3G21-6

UHF power LDMOS transistor

=15W

L(AV)

+6 V;

1.85 2.3 - A

+9V;ID= 0.5 A - 1.6 2.07 Ω

- 0.3 - pF

[1]

10 K/W

7. Application information

Table 8. Application information

VDS = 26 V; Th = 25°C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Mode of operation: Two-tone CW (100 kHz tone spacing); f = 2000 MHz; I

G

p

RL

in

η

D

IMD3 third order intermodulation

Mode of operation: one-tone CW; f = 2000 MHz; I

G

p

η

D

Mode of operation: PHS; f = 1900 MHz; I

G

p

η

D

ACPR

600k

power gain P
input return loss P
drain efficiency P

distortion

power gain PL=P
drain efficiency PL=P

power gain P
drain efficiency P
adjacent channel power

ratio (600 kHz)

Dq

= 6 W 14 15.5 - dB

L(PEP)

=6W - −7 −3dB

L(PEP)

=6W 35 39 - %

L(PEP)

P
P

Dq

P

=6W - −32 −29 dBc

L(PEP)

< 2 W - < −50 - dBc

L(PEP)

= 90 mA

Dq

= 7 W - 12.5 - dB

L(1dB)

= 7 W - 43 - %

L(1dB)

= 200 mA

= 2 W - 16 - dB

L(AV)

=2W - 20 - %

L(AV)

=2W - −75 - dBc

L(AV)

= 90 mA

BLF3G21-6_1 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 01 — 25 June 2008 3 of 12

NXP Semiconductors

7.1 Ruggedness in class-AB operation

The BLF3G21-6 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS=26V;
f = 2200 MHz at rated load power.

BLF3G21-6

UHF power LDMOS transistor

P

L(CW)

001aai224

(W)

10110

G

(dB)

15

p

13

11

9

7

5

−2

10

−1

VDS = 26 V; IDq= 90 mA; Th = 25 °C; f = 2000 MHz. VDS = 26 V; IDq= 90 mA; Th = 25 °C; f = 2000 MHz.

Fig 1. Power gain as a function of CW load power;

typical values

G

(dB)

18

p

16

G

p

14

001aai226

60

η

D

(%)

50

40

50

η

d

(%)

40

30

20

10

0

−2

10

−1

P

L(CW)

Fig 2. Drain efficiency as a function of

CW load power; typical values

0

IMD

(dBc)

−20

001aai225

(W)

001aai227

10110

12

10

η

D

8

6

−1

10

P

L(PEP)

(W)

VDS = 26 V; IDq = 90 mA; Th ≤ 25 °C; f1= 2000 MHz;
f2= 2000.1 MHz.

Fig 3. Two-tone power gain and drain efficiency as

function of peak envelope load power;
typical values

BLF3G21-6_1 © NXP B.V. 2008. All rights reserved.

30

20

10

0

101

−40

−60

−80

IMD3
IMD5

IMD7

−1

10

P

L(PEP)

(W)

101

VDS = 26 V; IDq = 90 mA; Th ≤ 25 °C; f1= 2000 MHz;
f2= 2000.1 MHz.

Fig 4. Two-tone intermodulation distortion as a

function of peak envelope load power;
typical values

Product data sheet Rev. 01 — 25 June 2008 4 of 12

NXP Semiconductors

BLF3G21-6

UHF power LDMOS transistor

−10

ACPR

(dB)

−50

−90

−130

−ACPR

192 kHz BW

−ACPR

900k

192 kHz BW

−ACPR

600k

192 kHz BW

−110.5−0.5 0

192 kHz
channel BW

at

300k

at

at

+ACPR

192 kHz BW

001aai228

at

300k

+ACPR

900k

192 kHz BW

+ACPR

600k

192 kHz BW

∆f (MHz)

at

at

VDS = 26 V; IDq = 200 mA; Th≤ 25 °C; fc= 1900 MHz;
P

= 2 W.

L(AV)

Fig 5. ACPR performance under PHS conditions,

measured in application board.

001aai230

Z

(Ω)

10

i

9

8

7

X

i

25

C

(pF)

20

15

10

5

0

Fig 6. C

11

Z

L

(Ω)

9

7

0403010 20

, C

iss

rss

and C

as function of drain supply

oss

voltage; typical values.

001aai229

C

iss

C

oss

C

rss

V

(V)

DS

001aai231

X

L

6

5

4

1.8 21.951.85 1.9

R

i

f (GHz)

5

3

1.8 21.951.85 1.9

R

L

f (GHz)

VDS = 26 V; IDq = 90 mA; PL = 45 W; Th≤ 25 °C. VDS = 26 V; IDq = 90 mA; PL = 45 W; Th≤ 25 °C.

Fig 7. Input impedance as a function of frequency

(series components); typical values

BLF3G21-6_1 © NXP B.V. 2008. All rights reserved.

Fig 8. Load impedance as a function of frequency

(series components); typical values

Product data sheet Rev. 01 — 25 June 2008 5 of 12

NXP Semiconductors

8. Test information

BLF3G21-6

UHF power LDMOS transistor

V

GG

C17

R2

R1

output

50 Ω

C1

L3

C2

L4

L5

L6

C3 C4 C5 C8 C9 C10

Fig 9. Class-AB test circuit for 2 GHz

C20 C21 C16 C18 C19

C6 C7

L7

L8

L2

L1

C12 C13 C14 C15

C11

L10

L9

L11

V

DD

output

50 Ω

001aai232

BLF3G21-6_1 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 01 — 25 June 2008 6 of 12

NXP Semiconductors

BLF3G21-6

UHF power LDMOS transistor

C15
C14
C13
C12

C8

C19

C16

L2

L1

C11

C10C9

54

mm

C17 C18

R2

C20
C21

C1

C3

C2

R1

C5

C4

C7

C6

52 mm

001aai233

Dimensions in mm.
The components are situated on one side of the copper-clad Printed-Circuit Board (PCB) with

Teflon dielectric (εr = 2.2); thickness = 0.51 mm.
The other side is unetched and serves as a ground plane.
See Table 9 for list of components.

Fig 10. Component layout for 2 GHz class-AB test circuit

BLF3G21-6_1 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 01 — 25 June 2008 7 of 12

NXP Semiconductors

UHF power LDMOS transistor

Table 9. List of components (see Figure 9 and Figure 10)

Component Description Value Remarks

[1]

C1, C2, C11 multilayer ceramic chip capacitor
C4, C10 Tekelec variable capacitor; type 37281 0.4 pF to 2.5 pF
C6 multilayer ceramic chip capacitor
C7 multilayer ceramic chip capacitor
C8 multilayer ceramic chip capacitor
C9 Tekelec variable capacitor; type 37281 0.6 pF to 4.5 pF
C12 multilayer ceramic chip capacitor
C13 multilayer ceramic chip capacitor
C14 multilayer ceramic chip capacitor
C15 multilayer ceramic chip capacitor 100 nF
C16 electrolytic capacitor 100 µF; 63 V
C17, C18 tantalum SMD capacitor 10 µF; 35 V
C19 multilayer ceramic chip capacitor
C20 multilayer ceramic chip capacitor
C21 multilayer ceramic chip capacitor
L1, L2 3 turns enamelled copper wire

L3 stripline
L3 stripline
L4 stripline
L5 stripline
L6 stripline
L7, L8 stripline
L9 stripline
L10, L11 stripline
R1 SMD resistor 470 Ω
R2 SMD resistor 1 kΩ

6.8 pF

[1]

2.7 pF

[1]

2.0 pF

[1]

0.2 nF

[1]

10 pF

[1]

51 pF

[1]

120 pF

[2]

1 nF

[1]

22 pF

[1]

560 pF

[3]

D=2mm;
d = 0.8 mm;
length = 3 mm

[3]

50 Ω (L × W) 3.5 mm × 1.5 mm

[3]

34.3 Ω (L × W) 1.0 mm × 1.5 mm

[3]

50 Ω (L × W) 11.0 mm × 0.8 mm

[3]

34.3 Ω (L × W) 8.0 mm × 3.0 mm

[3]

23.6 Ω (L × W) 1.5 mm × 1.0 mm

[3]

5.6 Ω (L × W) 14.4 mm × 3.0 mm

[3]

3.5 Ω (L × W) 3.5 mm × 1.5 mm

[3]

31.9 Ω (L × W) 12.0 mm × 1.9 mm

BLF3G21-6

[1] American Technical Ceramics type 100A or capacitor of same quality.
[2] American Technical Ceramics type 100B or capacitor of same quality.
[3] The striplines are on a double copper-clad Printed-Circuit Board (PCB) with Rogers 5880 dielectric (εr = 2.2); thickness = 0.51 mm.

BLF3G21-6_1 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 01 — 25 June 2008 8 of 12

NXP Semiconductors

BLF3G21-6

UHF power LDMOS transistor

9. Package outline

Ceramic surface-mounted package; 2 leads SOT538A

D

A

3

D

1

D

2

1

z1 (4×)

H

2

b

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

mm

A

2.95

2.29

0.116

0.090

1.35

1.19

0.053

0.047

0.23

0.18

0.009

0.007

5.16

5.00

0.203

0.197

D1D

4.65

4.50

0.183

0.177

5.16

5.00

0.203

0.197

UNIT cbD

inches

w

M M

1

0 2.5 5 mm

E

2

4.14

3.99

0.163

0.157

B

E

3.63

3.48

0.143

0.137

z4 (4×)z2 (4×)

B

scale

HLQ α

E

1

2

7.49

4.14

7.24

3.99

0.295

0.163

0.285

0.157

2.03

1.27

0.080

0.050

A

E2E

0.10

0.00

0.004

0.000

1

z3 (4×)

L

w

0.25

0.010

c

E

α

Q

z

z

z

z

1

0.58

0.43

0.023

0.017

2

1

0.97

0.25

0.81

0.18

0.038

0.010

0.032

0.007

4

3

0.51

7°

0.00

0°

0.020

7°

0.000

0°

OUTLINE
VERSION

SOT538A

REFERENCES

IEC JEDEC JEITA

EUROPEAN

PROJECTION

ISSUE DATE

02-08-20
06-03-16

Fig 11. Package outline SOT538A

BLF3G21-6_1 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 01 — 25 June 2008 9 of 12

NXP Semiconductors

10. Abbreviations

Table 10. Abbreviations

Acronym Description

CDMA Code Division Multiple Access
EDGE Enhanced Data rates for GSM Evolution
GSM Global System for Mobile communications
HF High Frequency
LDMOS Laterally Diffused Metal-Oxide Semiconductor
PHS Personal Handy-phone System
RF Radio Frequency
SMD Surface Mount Device
UHF Ultra High Frequency
VSWR Voltage Standing-Wave Ratio
W-CDMA Wideband Code Division Multiple Access

BLF3G21-6

UHF power LDMOS transistor

11. Revision history

Table 11. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLF3G21-6_1 20080625 Product data sheet - -

BLF3G21-6_1 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 01 — 25 June 2008 10 of 12

NXP Semiconductors

12. Legal information

12.1 Data sheet status

BLF3G21-6

UHF power LDMOS transistor

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s)described in thisdocument may have changed sincethis document waspublished andmay differ in case of multiple devices. Thelatest product status

information is available on the Internet at URL

[1][2]

Product status

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information includedherein and shall haveno liability forthe consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with thesameproduct type number(s)and title. A short datasheet is intended
for quickreference only and should notberelied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXPSemiconductorsdoes not give anyrepresentationsor
warranties, expressed or implied, as totheaccuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This documentsupersedes and replaces all information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or

[3]

http://www.nxp.com.

Definition

malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute MaximumRatings System of IEC 60134) maycause permanent
damage tothedevice. Limiting valuesare stress ratings only andoperation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, aspublished
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any licenseunderany copyrights, patents
or other industrial or intellectual property rights.

12.4 Trademarks

Notice: Allreferenced brands,productnames, service namesandtrademarks
are the property of their respective owners.

13. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

BLF3G21-6_1 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 01 — 25 June 2008 11 of 12

NXP Semiconductors

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Application information. . . . . . . . . . . . . . . . . . . 3

7.1 Ruggedness in class-AB operation. . . . . . . . . . 4

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13 Contact information. . . . . . . . . . . . . . . . . . . . . 11

14 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

BLF3G21-6

UHF power LDMOS transistor

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2008. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

Date of release: 25 June 2008

Document identifier: BLF3G21-6_1