Page 1
BLF3G21-30
UHF power LDMOS transistor
Rev. 01 — 14 February 2007 Product data sheet
1. Product profile
1.1 General description
30 W LDMOS power transistor for base station applications at frequencies from
HF to 2200 MHz.
Table 1. Typical class-AB RF performance
IDq = 450 mA; Th = 25°C in a common source test circuit.
Mode of operation f P
CW 2000 36 12.5 43 - 36
Two-tone 2000 30 13.5 35 −26 -
L
(MHz) (W) (dB) (%) (dB) (W)
0.1 to 10 13.8 - < −50 -
G
η
p
D
IMD3 P
L(1dB)
CAUTION
Table 2. Typical class-A RF performance
IDq = 1 A; Th = 25°C in a modified PHS test fixture.
Mode of operation f P
(MHz) (W) (dB) (%) (dBc)
PHS 1880 to 1920 9 16 20 −75
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
L(AV)
G
p
1.2 Features
n Excellent back-off linearity
n Typical PHS performance at a supply voltage of 26 V and IDq of 1 A:
u Average output power=9W
u Gain = 16 dB (typ)
u Efficiency = 20 %
u ACPR
n Easy power control
n Excellent ruggedness
n High power gain
n Excellent thermal stability
n Designed for broadband operation (HF to 2200 MHz)
= −75 dBc
600
η
ACPR
D
600
Page 2
NXP Semiconductors
n No internal matching for broadband operation
n ESD protection
1.3 Applications
n RF power amplifiers for GSM, PHS, EDGE, CDMA and W-CDMA base stations and
multicarrier applications in the HF to 2200 MHz frequency range
n Broadcast drivers
2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Symbol
1 drain
2 gate
3 source
BLF3G21-30
UHF power LDMOS transistor
2
sym112
1
3
1
[1]
2
3
[1] Connected to flange
3. Ordering information
Table 4. Ordering information
Type number Package
BLF3G21-30 - flanged LDMOST ceramic package; 2 mounting holes;
4. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
V
GS
I
D
T
stg
T
j
drain-source voltage - 65 V
gate-source voltage - ±15 V
drain current - 4.5 A
storage temperature −65 +150 °C
junction temperature - 200 °C
Name Description Version
SOT467C
2 leads
BLF3G21-30_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 14 February 2007 2 of 12
Page 3
NXP Semiconductors
5. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-c)
R
th(j-h)
[1] Thermal resistance is determined under specified RF operating conditions
[2] Depending on mounting condition in application
thermal resistance from junction to case Th = 25 °C; P
thermal resistance from junction to heatsink Th = 25 °C; P
6. Characteristics
Table 7. Characteristics
Tj = 25°C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
(BR)DSS
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
C
rs
drain-source breakdown
voltage
gate-source threshold voltage VDS= 10 V; ID= 70 mA 2.0 - 3.0 V
drain leakage current VGS=0V; VDS=28V --5µA
drain cut-off current VGS=V
gate leakage current VGS= ±15 V; VDS=0V - - 11 nA
transfer conductance VDS= 10 V; ID= 2.5 A - 3 - S
drain-source on-state
resistance
feedback capacitance VGS=0V; VDS=28V;
BLF3G21-30
UHF power LDMOS transistor
=15W
L(AV)
=15W
L(AV)
VGS=0V; ID= 0.7 mA 65 - - V
V
=10V
DS
VGS=V
+9 V;
GS(th)
+9V;ID= 2.5 A - 0.3 - Ω
GS(th)
9- - A
- 1.7 - pF
f=1MHz
[1]
1.6 K/W
[2]
2.1 K/W
7. Application information
Table 8. Application information
VDS = 26 V; Th = 25°C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Mode of operation: Two-tone CW (100 kHz tone spacing); f = 2000 MHz; I
G
p
RL
in
η
D
IMD3 third order intermodulation
power gain P
input return loss P
drain efficiency P
distortion
P
P
Mode of operation: one-tone CW; f = 2000 MHz; I
G
p
η
D
Mode of operation: PHS; f = 1900 MHz; I
G
p
η
D
BLF3G21-30_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 14 February 2007 3 of 12
power gain PL=P
drain efficiency PL=P
Dq
power gain P
drain efficiency P
= 30 W 12.5 13.5 - dB
L(PEP)
=30W - −16 −11 dB
L(PEP)
= 30 W 32 35.0 - %
L(PEP)
=30W - −26 −23 dBc
L(PEP)
< 10 W - <−50 - dBc
L(PEP)
= 450 mA
Dq
= 36 W - 12.5 - dB
L(1dB)
= 36 W - 43 - %
L(1dB)
= 1 A
= 9 W - 16 - dB
L(AV)
=9W - 20 - %
L(AV)
= 450 mA
Dq
Page 4
NXP Semiconductors
7.1 Ruggedness in class-AB operation
The BLF3G21-30 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS=26V;
f = 2200 MHz at rated load power.
BLF3G21-30
UHF power LDMOS transistor
001aaf790
2
101
PL (W)
10
G
(dB)
15
p
13
11
9
7
5
−1
10
VDS = 26 V; IDq= 450 mA; Th = 25 °C; f = 2000 MHz VDS = 26 V; IDq= 450 mA; Th = 25 °C; f = 2000 MHz
Fig 1. Power gain as function of CW load power;
typical values
G
(dB)
15
p
13
G
p
001aaf792
50
40
η
(%)
001aaf791
2
101
PL (W)
10
η
(%)
50
d
40
30
20
10
0
−1
10
Fig 2. Drain efficiency as function of CW load power;
typical values
0
d
IMD
(dBc)
−20
001aaf793
(W)
30
−40
20
IMD3
10
0
2
10
−60
−80
IMD5
IMD7
−1
10
101
P
L(PEP)
(W)
2
10
VDS = 26 V; IDq = 450 mA; Th ≤ 25 °C;
f1= 2000 MHz; f2 = 2000.1 MHz
Fig 4. Two-toneintermodulationdistortion asfunction
of peak envelope load power; typical values
11
9
7
5
−1
10
η
D
101
P
L(PEP)
VDS = 26 V; IDq = 450 mA; Th ≤ 25 °C;
f1= 2000 MHz; f2 = 2000.1 MHz
Fig 3. Two-tone power gain and drain efficiency as
functions of peak envelope load power; typical
values
BLF3G21-30_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 14 February 2007 4 of 12
Page 5
NXP Semiconductors
BLF3G21-30
UHF power LDMOS transistor
−10
ACPR
(dB)
−50
(6) (7)
−90
−130
−1.0 1.00.5−0.5 0
(1)
(2)
(3)
001aaf794
(5)(4)
∆f (MHz)
(1) 192 kHz channel bandwidth
(2) −ACPR
(3) +ACPR
(4) −ACPR
(5) +ACPR
(6) −ACPR
(7) +ACPR
at 192 kHz bandwidth
300
at 192 kHz bandwidth
300
at 192 kHz bandwidth
600
at 192 kHz bandwidth
600
at 192 kHz bandwidth
900
at 192 kHz bandwidth
900
VDS = 26 V; IDq = 1000 mA; Th≤ 25 °C;
fc= 1900 MHz; P
L(AV)
= 9 W
Fig 5. ACPR performance under PHS conditions,
measured in application board
2
10
C
(pF)
10
1
−1
10
Fig 6. C
0504020 3010
, C
iss
rss
and C
as functions of drain supply
oss
voltage; typical values
001aaf795
C
oss
C
iss
C
rss
VDS (V)
5
Z
i
(Ω)
4
3
2
1
0
1.8 2.22.11.9 2.0
X
i
R
i
001aaf796
f (GHz)
VDS = 26 V; IDq = 450 mA; PL = 45 W; Th≤ 25 °CV
Fig 7. Input impedance as function of frequency
(series components); typical values
BLF3G21-30_1 © NXP B.V. 2007. All rights reserved.
6
Z
L
(Ω)
2
−2
−6
1.8 2.22.11.9 2.0
= 26 V; IDq = 450 mA; PL = 45 W; Th≤ 25 °C
DS
R
L
X
L
Fig 8. Load impedance as function of frequency
(series components); typical values
001aaf797
f (GHz)
Product data sheet Rev. 01 — 14 February 2007 5 of 12
Page 6
BLF3G21-30_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 14 February 2007 6 of 12
xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx
xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx
xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx
xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x
F1
50 Ω
input
C1
L1 L2
R1
C5
L3L4L5
C2 C4 C7 C8
V
gate
C6
L6
L7
L8
L12
L10
L9
L11
C11 C12
C10
L14
L13
R2
C13
C14
C9
L16L15
C15
50 Ω
output
V
C16
001aaf798
dd
8. Test information
NXP Semiconductors
Fig 9. Class-AB test circuit for 2 GHz
UHF power LDMOS transistor
BLF3G21-30
Page 7
NXP Semiconductors
BLF3G21-30
UHF power LDMOS transistor
PH98072 IN
C6
R1
C5
50 mm
C16
50 mm
60
mm
PH98073 OUT
C10
C13
C11
C12
C15
+
C14
F1
R2
C2
50 Ω
input
C1
C4
PH98072 IN
The components are situated on one side of the copper-clad Printed-Circuit Board (PCB) with Teflon dielectric (εr = 6.15);
thickness = 0.64 mm. The other side is unetched and serves as a ground plane.
See Table 9 for a list of components.
Fig 10. Component layout for 2 GHz class-AB test circuit
C9
C7
C8
PH98073 OUT
001aaf799
50 Ω
output
BLF3G21-30_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 14 February 2007 7 of 12
Page 8
NXP Semiconductors
BLF3G21-30
UHF power LDMOS transistor
Table 9. List of components (see Figure 9 and Figure 10)
Component Description Value Dimensions Catalogue No.
[2]
C1, C9 multilayer ceramic chip capacitor
C2, C4, C7, C8 Tekelec variable capacitor; type 37271 0.6 pF to 4.5 pF
C5, C10 multilayer ceramic chip capacitor
C6, C13, C14, C15 tantalum SMD capacitor 4.5 µF; 50 V
C11 multilayer ceramic chip capacitor
C12 multilayer ceramic chip capacitor 100 nF 2222 581 16641
C16 electrolytic capacitor 100 µF; 63 V 2222 037 58101
F1 ferrite SMD bead 8DS3/3/8/9-4S2 4330 030 36301
L1 stripline
L2 stripline
L3 stripline
L4, L12 stripline
L5 stripline
L6 stripline
L7 stripline
L8 stripline
L9 stripline
L10 stripline
L11 stripline
L13 stripline
L14 stripline
L15 stripline
L16 stripline
R1, R2 metal film resistor 10 Ω; 0.6 W 2322 156 11009
11 pF
[1]
12 pF
[2]
1 nF
[3]
50 Ω 13 mm × 0.9 mm
[3]
50 Ω 2 mm × 0.9 mm
[3]
34.3 Ω 15 mm × 1.7 mm
[3]
50 Ω 37 mm × 0.9 mm
[3]
34.3 Ω 6 mm × 1.7 mm
[3]
23.6 Ω 13 mm × 2.9 mm
[3]
5.6 Ω 6 mm × 15.8 mm
[3]
3.5 Ω 6 mm × 26 mm
[3]
31.9 Ω 12 mm × 1.9 mm
[3]
24.9 Ω 7.4 mm × 2.7 mm
[3]
50 Ω 3 mm × 0.9 mm
[3]
50 Ω 4.15 mm × 0.9 mm
[3]
26.3 Ω 2.5 mm × 2.5 mm
[3]
50 Ω 2.8 mm × 0.9 mm
[3]
50 Ω 14 mm × 0.9 mm
[1] American Technical Ceramics type 100B or capacitor of same quality
[2] American Technical Ceramics type 100A or capacitor of same quality
[3] The striplines are on a double copper-clad Printed-Circuit Board (PCB) with Teflon dielectric (εr = 6.15); thickness = 0.64 mm
BLF3G21-30_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 14 February 2007 8 of 12
Page 9
NXP Semiconductors
9. Package outline
BLF3G21-30
UHF power LDMOS transistor
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
D
A
3
D
1
U
1
q
1
H
U
2
A
C
p
F
B
w
M M M
1
AB
SOT467C
c
E
1
E
2
U
1
0.235
0.225
EUROPEAN
PROJECTION
U
5.97
5.72
Q
2
w
w
2
1
0.25
0.51
0.010 0.020
ISSUE DATE
99-12-06
99-12-28
w
M M
scale
18.54
17.02
0.73
0.67
C
2
3.43
3.18
0.135
0.125
b
0 5 10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
mm
inch
OUTLINE
VERSION
SOT467C
A
4.67
3.94
0.184
0.155
b
5.59
5.33
0.220
0.210
cD
0.15
0.10
0.006
0.004
IEC JEDEC EIAJ
9.25
9.04
0.364
0.356
D
9.27
9.02
0.365
0.355
E
5.92
5.77
0.233
0.227
E
1
1.65
5.97
1.40
5.72
0.065
0.235
0.055
0.225
REFERENCES
1
FH p q
UNIT
Q
2.21
1.96
0.087
0.077
14.27
0.562
20.45
20.19
0.805
0.795
Fig 11. Package outline SOT467C
BLF3G21-30_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 14 February 2007 9 of 12
Page 10
NXP Semiconductors
10. Abbreviations
Table 10. Abbreviations
Acronym Description
CDMA Code Division Multiple Access
EDGE Enhanced Data rates for the GSM Evolution
GSM Global System for Mobile communications
HF High Frequency
LDMOS Laterally Diffused Metal Oxide Semiconductor
LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor
PHS Personal HandyPhone System
RF Radio Frequency
SMD Surface-Mount Device
UHF Ultra High Frequency
VSWR Voltage Standing-Wave Ratio
W-CDMA Wideband Code Division Multiple Access
BLF3G21-30
UHF power LDMOS transistor
11. Revision history
Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLF3G21-30_1 20070214 Product data sheet - -
BLF3G21-30_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 14 February 2007 10 of 12
Page 11
NXP Semiconductors
12. Legal information
12.1 Data sheet status
BLF3G21-30
UHF power LDMOS transistor
Document status
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s)described in thisdocument mayhave changed since this documentwas published andmay differin case ofmultiple devices.The latest product status
information is available on the Internet at URL
[1][2]
Product status
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information includedherein and shall have no liabilityfor the consequencesof
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with thesame product type number(s)and title. Ashort data sheetis intended
for quickreference only and shouldnotbe relied upon to containdetailedand
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXPSemiconductorsdoes not give anyrepresentations or
warranties, expressed or implied, as tothe accuracy or completeness ofsuch
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right tomake
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. Thisdocumentsupersedes and replaces all information suppliedprior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
[3]
http://www.nxp.com.
Definition
malfunction ofa NXP Semiconductorsproductcan reasonablybeexpected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute MaximumRatings System of IEC 60134)may cause permanent
damage tothedevice. Limiting valuesare stress ratings onlyand operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions ofcommercialsale, as published
at
http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of anylicense under any copyrights, patents
or other industrial or intellectual property rights.
12.4 Trademarks
Notice: Allreferenced brands,productnames, service namesand trademarks
are the property of their respective owners.
13. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
BLF3G21-30_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 14 February 2007 11 of 12
Page 12
NXP Semiconductors
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB operation. . . . . . . . . . 4
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13 Contact information. . . . . . . . . . . . . . . . . . . . . 11
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
BLF3G21-30
UHF power LDMOS transistor
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 14 February 2007
Document identifier: BLF3G21-30_1
Loading...