Philips BLF368 User Manual

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D091

BLF368

VHF push-pull power MOS transistor

Product speciﬁcation Supersedes data of 1998 Jul 29

2003 Sep 26

Philips Semiconductors Product speciﬁcation

VHF push-pull power MOS transistor BLF368

FEATURES

• High power gain

• Easy power control

• Good thermal stability

• Gold metallization ensures

excellent reliability.

DESCRIPTION

Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applications in the VHF frequency range.

The transistor is encapsulated in a 4-lead SOT262A1 balanced flange package, with twoceramic caps. The mounting flange provides the common source connection for the transistors.

PINNING - SOT262A1

PIN DESCRIPTION

1 drain 1 2 drain 2 3 gate 1 4 gate 2 5 source

PIN CONFIGURATION

dbook, halfpage

Top view

MSB008

MBB157

Fig.1 Simplified outline and symbol.

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostaticdischargeduringtransportandhandling.Forfurther information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.

QUICK REFERENCE DATA

RF performance at Th=25°C in a push-pull common source test circuit.

MODE OF OPERATION

(MHz)

(V)

(W)

∆G

(dB)

(note 1)

(%)

CW, class-AB 225 32 300 >12 >1 >55

typ. 13.5 typ. 0.4 typ. 62

Note

1. Assuminga third order amplitude transfer characteristic, 1 dB gaincompressioncorresponds with 30% synchronized input/25% synchronized output compression in television service (negative modulation, CCIR system).

2003 Sep 26 2

Philips Semiconductors Product speciﬁcation

VHF push-pull power MOS transistor BLF368

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per transistor section unless otherwise speciﬁed

tot

stg

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

th j-mb

th mb-h

drain-source voltage − 65 V gate-source voltage −±20 V drain current (DC) − 25 A total power dissipation Tmb≤ 25 °C total device; both sections equally loaded − 500 W storage temperature −65 +150 °C junction temperature − 200 °C

thermal resistance from junction to mounting base totaldevice;bothsections

0.35 K/W

equally loaded

thermal resistance from mounting base to heatsink

total device;both sections equally loaded

0.15 K/W

handbook, halfpage

(A)

(1)

110

(1) Current in this area may be limited by R (2) Tmb=25°C. Total device; both sections equally loaded.

Fig.2 DC SOAR.

MRA933

(2)

(V)

DSon

500

handbook, halfpage

tot

(W)

400

300

200

100

0 40 80 160

(1) Continuous operation. (2) Short-time operation during mismatch. Total device; both sections equally loaded.

(1)

Fig.3 Power derating curves.

(2)

120

MGE616

Th (°C)

2003 Sep 26 3

Philips Semiconductors Product speciﬁcation

VHF push-pull power MOS transistor BLF368

CHARACTERISTICS

Tj=25°C unless otherwise speciﬁed.

SYMBOL PARAMETERS CONDITIONS MIN. TYP. MAX. UNIT

Per transistor section

(BR)DSS

DSS

GSS

GSth

∆V

fs1/gfs2

DSon

DSX

d-f

drain-source breakdown voltage VGS= 0; ID= 100 mA 65 −−V drain-source leakage current VGS= 0; VDS=32V −−5mA gate-source leakage current VGS= ±20 V; VDS=0 −−1µA gate-source threshold voltage ID= 100 mA; VDS=10V 2 − 4.5 V gate-source voltage difference of

ID= 100 mA; VDS=10V −−100 mV

both transistor sections forward transconductance ID= 8 A; VDS=10V 5 7.5 − S forward transconductance ratio of

ID= 8 A; VDS=10V 0.9 − 1.1

both transistor sections drain-source on-state resistance ID= 8 A; VDS=10V − 0.1 0.15 Ω on-state drain current VGS= 10 V; VDS=10V − 37 − A input capacitance VGS= 0; VDS= 32 V; f = 1 MHz − 495 − pF output capacitance VGS= 0; VDS= 32 V; f = 1 MHz − 340 − pF feedback capacitance VGS= 0; VDS= 32 V; f = 1 MHz − 40 − pF drain-ﬂange capacitance − 5.4 − pF

VGS group indicator

GROUP

LIMITS

(V)

GROUP

LIMITS

MIN. MAX. MIN. MAX.

A 2.0 2.1 O 3.3 3.4 B 2.1 2.2 P 3.4 3.5 C 2.2 2.3 Q 3.5 3.6 D 2.3 2.4 R 3.6 3.7 E 2.4 2.5 S 3.7 3.8 F 2.5 2.6 T 3.8 3.9 G 2.6 2.7 U 3.9 4.0 H 2.7 2.8 V 4.0 4.1

J 2.8 2.9 W 4.1 4.2 K 2.9 3.0 X 4.2 4.3 L 3.0 3.1 Y 4.3 4.4

M 3.1 3.2 Z 4.4 4.5 N 3.2 3.3

(V)

2003 Sep 26 4

Philips Semiconductors Product speciﬁcation

VHF push-pull power MOS transistor BLF368

handbook, halfpage

T.C.

(mV/K)

−1

−2

−3

−4

−5

−1

VDS=10V.

110

(A)

Fig.4 Temperature coefficient of gate-source

voltageasafunctionofdraincurrent;typical values per section.

MGP229

MGP230

VGS (V)

handbook, halfpage

(A)

0 5 10 20

VDS= 10 V; Tj=25°C.

Fig.5 Drain current as a function of gate-source

voltage; typical values per section.

200

handbook, halfpage

DSon

(mΩ)

150

100

0 50 100 150

VGS= 10 V; ID=8A.

Tj (°C)

Fig.6 Drain-source on-state resistance as a

function of junction temperature; typical values per section.

MGP231

1500

handbook, halfpage

(pF)

1000

500

01020 40

VGS= 0; f = 1 MHz.

C C

MGP234

is os

VDS (V)

Fig.7 Input and output capacitance as functions

of drain-source voltage; typical values per section.

2003 Sep 26 5

Philips Semiconductors Product speciﬁcation

VHF push-pull power MOS transistor BLF368

600

handbook, halfpage

(pF)

400

200

01020 40

VGS= 0; f = 1 MHz.

VDS (V)

Fig.8 Feedback capacitance as a function of

drain-source voltage; typical values per section.

MGP232

APPLICATION INFORMATION FOR CLASS-AB OPERATION

Th=25°C; R class-AB circuit. R

MODE OF OPERATION

= 0.15 K/W unless otherwise speciﬁed. RF performance in CW operation in a common source

th mb-h

= 536 Ω per section; optimum load impedance per section = 1.34 + j0.34 Ω; VDS=32V.

(MHz)

(V)

(mA)

(W)

(dB)

∆G

(dB)

(1)

(%)

CW, class-AB 225 32 2 × 250 300 >12 >1 >55

typ. 13.5 typ. 0.4 typ. 62 225 28 2 × 250 300 typ. 13 typ. 0.7 typ. 68 225 35 2 × 250 300 typ. 14 typ. 0.2 typ. 60 175 28 2 × 250 300 typ. 15 typ. 0.5 typ. 70

Note

1. Assuming a third order amplitude transfer characteristic, 1 dB compression corresponds with 30% synchronized input/25% synchronized output compression in television service (negative modulation, CCIR system).

Ruggedness in class-AB operation

The BLF368 is capable of withstanding a load mismatch corresponding to VSWR = 10: 1 through all phases under the following conditions: V

= 32 V; f = 225 MHz at rated output power.

2003 Sep 26 6

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