Philips BLF368 User Manual

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D091

BLF368

VHF push-pull power MOS
transistor

Product specification
Supersedes data of 1998 Jul 29

2003 Sep 26

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF368

FEATURES

• High power gain

• Easy power control

• Good thermal stability

• Gold metallization ensures

excellent reliability.

DESCRIPTION

Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor, designed for broadcast
transmitter applications in the VHF
frequency range.

The transistor is encapsulated in a
4-lead SOT262A1 balanced flange
package, with twoceramic caps. The
mounting flange provides the
common source connection for the
transistors.

PINNING - SOT262A1

PIN DESCRIPTION

1 drain 1
2 drain 2
3 gate 1
4 gate 2
5 source

PIN CONFIGURATION

dbook, halfpage

12

g

2

g

1

55

Top view

34

MSB008

MBB157

d

2

s

d

1

Fig.1 Simplified outline and symbol.

CAUTION

This product is supplied in anti-static packing to prevent damage caused by
electrostaticdischargeduringtransportandhandling.Forfurther information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.

QUICK REFERENCE DATA

RF performance at Th=25°C in a push-pull common source test circuit.

MODE OF OPERATION

f

(MHz)

V

(V)

DS

P

(W)

∆G

L

G

p

(dB)

p

(dB)

(note 1)

η

(%)

D

CW, class-AB 225 32 300 >12 >1 >55

typ. 13.5 typ. 0.4 typ. 62

Note

1. Assuminga third order amplitude transfer characteristic, 1 dB gaincompressioncorresponds with 30% synchronized
input/25% synchronized output compression in television service (negative modulation, CCIR system).

2003 Sep 26 2

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF368

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per transistor section unless otherwise specified

V

DS

V

GS

I

D

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

R

th mb-h

drain-source voltage − 65 V
gate-source voltage −±20 V
drain current (DC) − 25 A
total power dissipation Tmb≤ 25 °C total device; both sections equally loaded − 500 W
storage temperature −65 +150 °C
junction temperature − 200 °C

thermal resistance from junction to mounting base totaldevice;bothsections

0.35 K/W

equally loaded

thermal resistance from mounting base to
heatsink

total device;both sections
equally loaded

0.15 K/W

2

10

handbook, halfpage

I

D

(A)

(1)

10

1

110

(1) Current in this area may be limited by R
(2) Tmb=25°C.
Total device; both sections equally loaded.

Fig.2 DC SOAR.

MRA933

(2)

2

.

(V)

10

V

DS

DSon

500

handbook, halfpage

P

tot

(W)

400

300

200

100

0

0 40 80 160

(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.

(1)

Fig.3 Power derating curves.

(2)

120

MGE616

Th (°C)

2003 Sep 26 3

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF368

CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETERS CONDITIONS MIN. TYP. MAX. UNIT

Per transistor section

V

(BR)DSS

I

DSS

I

GSS

V

GSth

∆V

GS

g

fs

g

fs1/gfs2

R

DSon

I

DSX

C

is

C

os

C

rs

C

d-f

drain-source breakdown voltage VGS= 0; ID= 100 mA 65 −−V
drain-source leakage current VGS= 0; VDS=32V −−5mA
gate-source leakage current VGS= ±20 V; VDS=0 −−1µA
gate-source threshold voltage ID= 100 mA; VDS=10V 2 − 4.5 V
gate-source voltage difference of

ID= 100 mA; VDS=10V −−100 mV

both transistor sections
forward transconductance ID= 8 A; VDS=10V 5 7.5 − S
forward transconductance ratio of

ID= 8 A; VDS=10V 0.9 − 1.1

both transistor sections
drain-source on-state resistance ID= 8 A; VDS=10V − 0.1 0.15 Ω
on-state drain current VGS= 10 V; VDS=10V − 37 − A
input capacitance VGS= 0; VDS= 32 V; f = 1 MHz − 495 − pF
output capacitance VGS= 0; VDS= 32 V; f = 1 MHz − 340 − pF
feedback capacitance VGS= 0; VDS= 32 V; f = 1 MHz − 40 − pF
drain-flange capacitance − 5.4 − pF

VGS group indicator

GROUP

LIMITS

(V)

GROUP

LIMITS

MIN. MAX. MIN. MAX.

A 2.0 2.1 O 3.3 3.4
B 2.1 2.2 P 3.4 3.5
C 2.2 2.3 Q 3.5 3.6
D 2.3 2.4 R 3.6 3.7
E 2.4 2.5 S 3.7 3.8
F 2.5 2.6 T 3.8 3.9
G 2.6 2.7 U 3.9 4.0
H 2.7 2.8 V 4.0 4.1

J 2.8 2.9 W 4.1 4.2
K 2.9 3.0 X 4.2 4.3
L 3.0 3.1 Y 4.3 4.4

M 3.1 3.2 Z 4.4 4.5
N 3.2 3.3

(V)

2003 Sep 26 4

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF368

handbook, halfpage

0

T.C.

(mV/K)

−1

−2

−3

−4

−5

−1

10

VDS=10V.

110

I

(A)

D

Fig.4 Temperature coefficient of gate-source

voltageasafunctionofdraincurrent;typical
values per section.

MGP229

15

MGP230

VGS (V)

60

handbook, halfpage

I

D

(A)

40

20

0

0 5 10 20

VDS= 10 V; Tj=25°C.

Fig.5 Drain current as a function of gate-source

voltage; typical values per section.

200

handbook, halfpage

R

DSon

(mΩ)

150

100

50

0 50 100 150

VGS= 10 V; ID=8A.

Tj (°C)

Fig.6 Drain-source on-state resistance as a

function of junction temperature; typical
values per section.

MGP231

1500

handbook, halfpage

C

(pF)

1000

500

0

01020 40

VGS= 0; f = 1 MHz.

C
C

MGP234

is
os

30

VDS (V)

Fig.7 Input and output capacitance as functions

of drain-source voltage; typical values per
section.

2003 Sep 26 5

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF368

600

handbook, halfpage

C

rs

(pF)

400

200

0

01020 40

VGS= 0; f = 1 MHz.

30

VDS (V)

Fig.8 Feedback capacitance as a function of

drain-source voltage; typical values per
section.

MGP232

APPLICATION INFORMATION FOR CLASS-AB OPERATION

Th=25°C; R
class-AB circuit. R

MODE OF OPERATION

= 0.15 K/W unless otherwise specified. RF performance in CW operation in a common source

th mb-h

= 536 Ω per section; optimum load impedance per section = 1.34 + j0.34 Ω; VDS=32V.

GS

f

(MHz)

V

(V)

DS

I

DQ

(mA)

P

(W)

L

G

p

(dB)

∆G

(dB)

(1)

p

η

(%)

D

CW, class-AB 225 32 2 × 250 300 >12 >1 >55

typ. 13.5 typ. 0.4 typ. 62
225 28 2 × 250 300 typ. 13 typ. 0.7 typ. 68
225 35 2 × 250 300 typ. 14 typ. 0.2 typ. 60
175 28 2 × 250 300 typ. 15 typ. 0.5 typ. 70

Note

1. Assuming a third order amplitude transfer characteristic, 1 dB compression corresponds with 30% synchronized
input/25% synchronized output compression in television service (negative modulation, CCIR system).

Ruggedness in class-AB operation

The BLF368 is capable of withstanding a load mismatch corresponding to VSWR = 10: 1 through all phases under the
following conditions: V

= 32 V; f = 225 MHz at rated output power.

DS

2003 Sep 26 6

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF368

20

handbook, halfpage

G

p

(dB)

16

12

8

4

0 500

100 200 300 400

Class-AB operation; VDS= 32 V; IDQ=2×250 mA;

= 1.34 + j0.34 Ω (per section); RGS= 536 Ω (per section);

Z

L

f = 225 MHz.
solid line: T

=25°C. dotted line: Th=70°C.

h

MGP239

PL (W)

Fig.9 Power gain as a function of load power;

typical values per section.

80

handbook, halfpage

η

D

(%)

60

40

20

0

0 100 500

Class-AB operation; VDS= 32 V; IDQ=2×250 mA;

= 1.34 + j0.34 Ω (per section); RGS= 536 Ω (per section);

Z

L

f = 225 MHz.
solid line: T

=25°C. dotted line: Th=70°C.

h

200 300 400

Fig.10 Efficiency as a function of load power;

typical values per section.

MGP241

PL (W)

500

handbook, halfpage

P

L

(W)

400

300

200

100

0

0102030

Class-AB operation; VDS= 32 V; IDQ=2×250 mA;

= 1.34 + j0.34 Ω (per section); RGS= 536 Ω (per section);

Z

L

f = 225 MHz.
solid line: T

=25°C. dotted line: Th=70°C.

h

MGP240

PIN (W)

Fig.11 Load power as a function of input power;

typical values per section.

2003 Sep 26 7

This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in

_white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in

white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ...

2003 Sep 26 8

2003 Sep 26 8

R1

A

C6

C8

R2

C9

handbook, full pagewidth

V

DD1

C16

C12

C17

R7

L12

C13

C18

Philips Semiconductors Product specification

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF368

VHF push-pull power MOS transistor BLF368

f = 225 MHz.

V

DD1

50 Ω
input

R9

C34

C14

C15

L10

L11

R8

V

DD2

L13

L16

L17

L14

C19

C20

C21

C25

C23C22 C24

C26

L15

MGP211

L19

C27

L20L18

L21

C28

C29

C30

L22

L24

L23

50 Ω

output

R3

D.U.T.

L7

C7

L8

L6L4

L9

R4

C10

R5

C11

R6

C31C32

L1

L2

L3

IC1

C1

C2

C4 C5

C3

L5

A

C33

Fig.12 Test circuit for class-AB operation.

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF368

List of components class-AB test circuit (see Figs 12 and 13)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C2 multilayer ceramic chip capacitor;

note 1

C3 film dielectric trimmer 2 to 9 pF 2222 809 09005
C4 multilayer ceramic chip capacitor;

note 1
C5 film dielectric trimmer 5 to 60 pF 2222 809 08003
C6, C7, C9, C10,

C12, C15, C31, C34
C8, C11, C16, C21,

C32
C17, C20, C33 electrolytic capacitor 10 µF, 63 V
C22 multilayer ceramic chip capacitor;

C23 multilayer ceramic chip capacitor;

C24, C28 film dielectric trimmer 2 to 18 pF 2222 809 09006
C25, C26 multilayer ceramic chip capacitor;

C27 multilayer ceramic chip capacitor;

C29, C30 multilayer ceramic chip capacitor;

L1, L3, L22, L24 stripline; note 2 50 Ω 4.8 × 80 mm
L2, L23 semi-rigid cable; note 3 50 Ω ext. conductor

L4, L5 stripline; note 2 43 Ω 6 × 32.5 mm
L6, L7 stripline; note 2 43 Ω 6 × 10.5 mm
L8, L9 stripline; note 2 43 Ω 6 × 3mm
L10, L11 stripline; note 2 43 Ω 6 × 10.5 mm
L12, L15 grade 3B Ferroxcube wideband

L13, L14 2 turns enamelled 1.6 mm copper

L16, L17 stripline; notes 2 and 4 43 Ω 6 × 3mm
L18, L19 stripline; notes 2 and 4 43 Ω 6 × 35 mm
L20, L21 stripline; notes 2 and 4 43 Ω 6 × 9mm
R1, R6 10 turns potentiometer 50 kΩ
R2, R5 metal film resistor 0.4 W, 1 kΩ
R3, R4 metal film resistor 0.4 W, 536 Ω

multilayer ceramic chip capacitor;

note 1

multilayer ceramic chip capacitor;

note 1

note 1

note 1

note 1

note 1

note 1

HF choke

wire

2 × 56 pF in
parallel + 18 pF,
500 V

47 pF, 500 V

1 nF, 500 V 2222 852 47104

100 nF, 50 V

82 pF, 500 V

10 pF + 30 pF in
parallel, 500 V

39 pF + 47 pF in
parallel, 500 V

18 pF, 500 V

3 × 100 pF in
parallel, 500 V

length 80 mm
ext. dia 3.6 mm

2 in parallel 4312 020 36642

25 nH space 2.5 mm

int. dia. 5 mm
leads 2 × 7mm

2003 Sep 26 9

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF368

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

R7, R8 metal film resistor 1 W, ±5%, 10 Ω
R9 metal film resistor 1 W, 3.16 kΩ
IC1 voltage regulator 78L05

Notes

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

2. The striplines L1, L3 to L11, L16 to L22 and L24 are on a double copper-clad printed circuit board with glass
microfibre PTFE dielectric (εr= 2.2); thickness1⁄16inch; thickness of copper sheet 2 × 35 µm.

3. Semi-rigid cables L2 and L23 are soldered on to striplines L1 and L24.

4. A copper strap, thickness 0.8 mm, is soldered over the complete striplines L16 to L21 to avoid overheating by large
RF currents.

2003 Sep 26 10

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF368

handbook, full pagewidth

+V

L1

hollow rivets

L3

DD1

C17

C20

L20

C28

L21

130

C29

C30

copper strap

L23

L22

hollow rivets

L24

MGP213

119

100

to R1, R6

R9

L2

IC1

C34

C1

C3

C2

C11

C8

L4

L5

slider R1

C5

slider R6

copper strap

C31
C32

C33

C9

R2

C6

R3

L8

L6

C4

L7

L9

R4

R5

C10

C7

C18

L10

C13

L13

C25

L16

C23

C22

C24

L17

C26

L11

L14

C19

C14

C12

L12

R7

L12

hollow rivet

L18

L19

L15

R8

L15

C15 C21

C16

+V

DD1

C27

+V

DD2

The circuit and components are situatedononesideofthePTFEfibre-glassboard, the other side being fully metallized, to serve as a ground plane.
Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets.

Dimensions in mm.

Fig.13 Component layout for 225 MHz class-AB test circuit.

2003 Sep 26 11

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF368

handbook, halfpage

2

Z

i

(Ω)

1

0

−1

−2

150 250

Class-AB operation; VDS= 32 V; IDQ=2×250 mA;

= 536 Ω (per section); PL= 300 W.

R

GS

r

i

x

i

200

MGP242

f (MHz)

Fig.14 Input impedance as a function of frequency

(series components); typical values per
section.

handbook, halfpage

2

Z

L

(Ω)

1

0

150 250

Class-AB operation; VDS= 32 V; IDQ=2×250 mA;

= 536 Ω (per section); PL= 300 W.

R

GS

R

L

X

L

200

MGP243

f (MHz)

Fig.15 Load impedance as a function of frequency

(series components); typical values per
section.

20

handbook, halfpage

G

p

(dB)

16

12

8

4

0

150 250

Class-AB operation; VDS= 32 V; IDQ=2×250 mA;

= 536 Ω (per section); PL= 300 W.

R

GS

200

f (MHz)

Fig.16 Power gain as a function of frequency;

typical values per section.

MGP244

2003 Sep 26 12

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF368

BLF368 scattering parameters

VDS= 28 V; ID= 250 mA; note 1

f (MHz)

s

11

s

21

s

12

s

22

|s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ

5 0.86 −159.2 21.94 96.8 0.01 −0.8 0.90 169.1
10 0.86 −168.9 11.14 88.5 0.01 21.1 0.85 174.3
20 0.86 −173.4 5.45 79.2 0.01 18.7 0.83 178.2
30 0.86 −174.2 3.53 72.3 0.02 8.7 0.83 −179.8
40 0.87 −174.4 2.54 66.3 0.02 0.3 0.84 −178.0
50 0.88 −174.5 1.94 61.0 0.02 −6.7 0.85 −176.7
60 0.90 −174.7 1.54 56.1 0.01 −12.5 0.86 −175.9
70 0.91 −174.9 1.25 51.8 0.01 −17.4 0.88 −175.4
80 0.92 −175.2 1.04 47.9 0.01 −21.1 0.89 −175.1
90 0.93 −175.5 0.88 44.4 0.01 −24.1 0.90 −175.0

100 0.93 −175.9 0.75 41.0 0.01 −26.6 0.91 −175.1
125 0.95 −176.7 0.53 34.0 0.01 −29.8 0.93 −175.6
150 0.96 −177.6 0.38 29.3 0.01 −28.2 0.94 −175.7
175 0.97 −178.4 0.30 25.8 0.00 −21.2 0.96 −176.1
200 0.97 −179.1 0.23 22.6 0.00 −6.2 0.97 −176.8
250 0.98 179.5 0.16 18.7 0.00 45.7 0.98 −177.7
300 0.99 178.4 0.11 17.1 0.01 70.9 0.99 −178.6
350 0.99 177.3 0.08 16.6 0.01 76.9 0.99 −179.2
400 0.99 176.4 0.07 18.9 0.01 84.9 0.99 −179.9
450 0.99 175.3 0.05 21.7 0.01 87.8 0.99 179.5
500 0.99 174.4 0.05 27.2 0.01 88.4 1.00 178.9
600 0.99 172.6 0.04 37.8 0.02 89.3 1.00 177.8
700 1.00 170.8 0.03 50.9 0.02 90.0 1.00 176.8
800 1.00 169.0 0.03 62.1 0.03 91.1 1.00 175.8
900 1.00 167.1 0.04 71.3 0.03 91.6 1.00 174.9

1000 1.00 165.1 0.04 76.4 0.04 92.3 1.00 173.8

Note

1. For more extensive s-parameters see internet:
http://www.semiconductors.philips.com/markets/communications/wirelesscommunications/broadcast

2003 Sep 26 13

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF368

BLF368 scattering parameters

VDS= 32 V; ID= 250 mA; note 1

f (MHz)

s

11

s

21

s

12

s

22

|s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ

5 0.86 −157.9 23.11 97.5 0.01 −2.1 0.90 168.6
10 0.86 −168.3 11.76 88.9 0.01 20.9 0.84 174.0
20 0.86 −173.1 5.75 79.4 0.01 18.7 0.82 178.1
30 0.86 −174.0 3.73 72.5 0.02 8.8 0.83 −179.7
40 0.87 −174.3 2.68 66.5 0.02 0.5 0.83 −177.9
50 0.88 −174.5 2.05 61.2 0.02 -6.5 0.84 −176.5
60 0.90 −174.6 1.63 56.4 0.01 −12.3 0.86 −175.7
70 0.91 −174.8 1.33 52.1 0.01 −17.1 0.87 −175.2
80 0.92 −175.2 1.10 48.2 0.01 −20.9 0.88 −174.8
90 0.93 −175.5 0.93 44.7 0.01 −23.9 0.89 −174.7

100 0.93 −175.8 0.80 41.4 0.01 −26.3 0.91 −174.8
125 0.95 −176.6 0.56 34.3 0.01 −29.5 0.92 −175.3
150 0.96 −177.5 0.41 29.5 0.01 −27.8 0.94 −175.5
175 0.97 −178.4 0.31 26.0 0.00 −20.8 0.96 −175.9
200 0.97 −179.1 0.25 22.8 0.00 −5.6 0.97 −176.6
250 0.98 179.6 0.16 18.9 0.00 45.9 0.98 −177.5
300 0.99 178.4 0.12 17.0 0.01 71.1 0.98 −178.4
350 0.99 177.3 0.09 16.9 0.01 77.4 0.99 −179.1
400 0.99 176.4 0.07 18.6 0.01 84.9 0.99 −179.8
450 0.99 175.4 0.06 21.2 0.01 87.9 0.99 179.7
500 0.99 174.4 0.05 24.8 0.01 88.5 1.00 179.0
600 0.99 172.6 0.04 36.3 0.02 89.4 1.00 177.9
700 1.00 170.8 0.03 49.2 0.02 90.1 1.00 176.9
800 1.00 169.0 0.03 61.2 0.03 91.2 1.00 175.9
900 1.00 167.1 0.04 70.4 0.03 91.8 1.00 175.0

1000 1.00 165.1 0.04 75.8 0.04 92.5 1.00 173.9

Note

1. For more extensive s-parameters see internet:
http://www.semiconductors.philips.com/markets/communications/wirelesscommunications/broadcast

2003 Sep 26 14

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF368

BLF368 scattering parameters

VDS= 35 V; ID= 250 mA; note 1

f (MHz)

s

11

s

21

s

12

s

22

|s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ

5 0.86 −156.9 23.97 98.1 0.01 −3.2 0.90 168.3
10 0.86 −167.8 12.21 89.2 0.01 20.7 0.84 173.8
20 0.86 −172.9 5.98 79.6 0.01 18.7 0.82 178.1
30 0.86 −173.9 3.88 72.7 0.01 8.9 0.82 −179.7
40 0.87 −174.2 2.79 66.7 0.02 0.6 0.82 −177.8
50 0.89 −174.4 2.13 61.4 0.02 −6.4 0.84 −176.4
60 0.90 −174.6 1.70 56.5 0.01 −12.2 0.85 −175.5
70 0.91 −174.8 1.38 52.2 0.01 −16.9 0.87 −175.0
80 0.92 −175.2 1.15 48.4 0.01 −20.8 0.88 −174.7
90 0.93 −175.5 0.97 44.9 0.01 −23.7 0.89 −174.5

100 0.93 −175.8 0.83 41.5 0.01 −26.0 0.90 −174.6
125 0.95 −176.6 0.58 34.5 0.01 −29.2 0.92 −175.1
150 0.96 −177.5 0.43 29.6 0.01 −27.6 0.94 −175.3
175 0.97 −178.3 0.33 26.1 0.00 −20.4 0.96 −175.7
200 0.97 −179.0 0.26 22.9 0.00 −5.1 0.96 −176.4
250 0.98 179.6 0.17 19.0 0.00 46.5 0.98 −177.3
300 0.99 178.4 0.12 16.9 0.01 71.2 0.98 −178.3
350 0.99 177.3 0.09 16.5 0.01 77.5 0.99 −179.0
400 0.99 176.4 0.07 18.1 0.01 84.9 0.99 −179.7
450 0.99 175.4 0.06 20.5 0.01 87.9 0.99 179.7
500 0.99 174.4 0.05 25.1 0.01 88.5 1.00 179.1
600 0.99 172.6 0.04 35.9 0.02 89.5 1.00 178.0
700 1.00 170.8 0.03 48.8 0.02 90.1 1.00 176.9
800 1.00 169.0 0.04 59.9 0.03 91.2 1.00 176.0
900 1.00 167.1 0.04 69.8 0.03 91.9 1.00 175.0

1000 1.00 165.1 0.04 75.8 0.04 92.6 1.00 173.9

Note

1. For more extensive s-parameters see internet:
http://www.semiconductors.philips.com/markets/communications/wirelesscommunications/broadcast

2003 Sep 26 15

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF368

PACKAGE OUTLINE

Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT262A1

D

A

F

D

1

U

1

q

H

1

w

M M

2

C

12

U

H

2

5

A

e

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

5.85

5.58

c

0.16

0.10

0.006

0.004

Db

22.17

21.46

0.873

0.845

D

1

21.98

21.71

0.865

0.855

EE

e U

10.27

11.05

10.05

0.404

0.435

0.396

UNIT

mm

inches

A

5.77

5.00

0.227

0.197

0.230

0.220

43

b

0 5 10 mm

scale

F

1

10.29

10.03

0.405

0.396

1.78

1.52

0.070

0.060

21.08

19.56

0.830

0.770

H

w

3

M

H

1

17.02

16.51

0.670

0.650

B

C

p

w

1

p

Q

3.28

2.85

3.02

2.59

0.129

0.112

0.119

0.102

c

E

1

M M M

AB

Q

qw

U

1

34.17

27.94

33.90

1.345

1.335

w

2

9.91

9.65

0.390

0.380

E

w

3

2

1

0.250.25 0.51

0.0100.010 0.0201.100

OUTLINE

VERSION

SOT262A1

IEC JEDEC EIAJ

REFERENCES

2003 Sep 26 16

EUROPEAN

PROJECTION

ISSUE DATE

99-03-29

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF368

DATA SHEET STATUS

LEVEL

DATA SHEET

STATUS

(1)

PRODUCT

STATUS

(2)(3)

DEFINITION

I Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

III Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

DEFINITIONS

DISCLAIMERS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratany other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warranty that such applications will be
suitable for the specified use without further testing or
modification.

Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusing or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2003 Sep 26 17

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [e-mail].

© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 613524/04/pp18 Date of release: 2003 Sep 26 Document order number: 9397 750 11602

SCA75