Philips BLF368 User Manual

DISCRETE SEMICONDUCTORS

DATA SHEET

M3D091

BLF368

VHF push-pull power MOS transistor

Product specification			2003 Sep 26
Supersedes data of 1998 Jul 29

Philips Semiconductors	Product specification
VHF push-pull power MOS transistor	BLF368

FEATURES

∙High power gain

∙Easy power control

∙Good thermal stability

∙Gold metallization ensures excellent reliability.

DESCRIPTION

Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applications in the VHF frequency range.

The transistor is encapsulated in a 4-lead SOT262A1 balanced flange package, with two ceramic caps. The mounting flange provides the common source connection for the transistors.

PINNING - SOT262A1

PIN	DESCRIPTION
1	drain 1
2	drain 2
3	gate 1
4	gate 2
5	source

QUICK REFERENCE DATA

PIN CONFIGURATION

1				2
ndbook, halfpage								g2						d2
														s
								g1
														d1
5						5
3				4
Top view						MSB008							MBB157

Fig.1 Simplified outline and symbol.

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.

RF performance at Th = 25 °C in a push-pull common source test circuit.

		f	VDS	PL	Gp	Gp	ηD
	MODE OF OPERATION					(dB)	(%)
		(MHz)	(V)	(W)	(dB)
						(note 1)
	CW, class-AB	225	32	300	>12	>1	>55
					typ. 13.5	typ. 0.4	typ. 62
	Note

1.Assuming a third order amplitude transfer characteristic, 1 dB gain compression corresponds with 30% synchronized input/25% synchronized output compression in television service (negative modulation, CCIR system).

2003 Sep 26

2

Philips Semiconductors			Product specification
VHF push-pull power MOS transistor				BLF368
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
Per transistor section unless otherwise specified
VDS	drain-source voltage		−	65	V
VGS	gate-source voltage		−	±20	V
ID	drain current (DC)		−	25	A
Ptot	total power dissipation	Tmb ≤ 25 °C total device; both sections equally loaded	−	500	W
Tstg	storage temperature		−65	+150	°C
Tj	junction temperature		−	200	°C

THERMAL CHARACTERISTICS

SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
Rth j-mb	thermal resistance from junction to mounting base	total device; both sections	0.35	K/W
		equally loaded
Rth mb-h	thermal resistance from mounting base to	total device; both sections	0.15	K/W
	heatsink	equally loaded

102		MRA933
handbook, halfpage
ID
(A)
(1)		(2)
10
1		102
1	10

VDS (V)

(1)Current in this area may be limited by RDSon.

(2)Tmb = 25 °C.

Total device; both sections equally loaded.

500				MGE616
handbook, halfpage
Ptot
(W)
400			(2)
		(1)
300
200
100
0	40	80	120	160
0
				Th (°C)

(1)Continuous operation.

(2)Short-time operation during mismatch. Total device; both sections equally loaded.

Fig.2 DC SOAR.

Fig.3 Power derating curves.

2003 Sep 26

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Philips Semiconductors

Product specification

VHF push-pull power MOS transistor

BLF368

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETERS

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor section

V(BR)DSS

drain-source breakdown voltage

VGS = 0; ID = 100 mA

65

−

−

V

IDSS

drain-source leakage current

VGS = 0; VDS = 32

V

−

−

5

mA

IGSS

gate-source leakage current

VGS = ±20 V; VDS = 0

−

−

1

μA

VGSth

gate-source threshold voltage

ID = 100 mA; VDS = 10 V

2

−

4.5

V

VGS

gate-source voltage difference of

ID = 100 mA; VDS = 10 V

−

−

100

mV

both transistor sections

gfs

forward transconductance

ID = 8 A; VDS = 10 V

5

7.5

−

S

gfs1/gfs2

forward transconductance ratio of

ID = 8 A; VDS = 10 V

0.9

−

1.1

both transistor sections

RDSon

drain-source on-state resistance

ID = 8 A; VDS = 10 V

−

0.1

0.15

Ω

IDSX

on-state drain current

VGS = 10 V; VDS = 10 V

−

37

−

A

Cis

input capacitance

VGS = 0; VDS = 32

V; f = 1 MHz

−

495

−

pF

Cos

output capacitance

VGS = 0; VDS = 32

V; f = 1 MHz

−

340

−

pF

Crs

feedback capacitance

VGS = 0; VDS = 32

V; f = 1 MHz

−

40

−

pF

Cd-f

drain-flange capacitance

−

5.4

−

pF

VGS group indicator

LIMITS

LIMITS

GROUP

(V)

GROUP

(V)

MIN.

MAX.

MIN.

MAX.

A

2.0

2.1

O

3.3

3.4

B

2.1

2.2

P

3.4

3.5

C

2.2

2.3

Q

3.5

3.6

D

2.3

2.4

R

3.6

3.7

E

2.4

2.5

S

3.7

3.8

F

2.5

2.6

T

3.8

3.9

G

2.6

2.7

U

3.9

4.0

H

2.7

2.8

V

4.0

4.1

J

2.8

2.9

W

4.1

4.2

K

2.9

3.0

X

4.2

4.3

L

3.0

3.1

Y

4.3

4.4

M

3.1

3.2

Z

4.4

4.5

N

3.2

3.3

2003 Sep 26

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Philips Semiconductors	Product specification
VHF push-pull power MOS transistor	BLF368

MGP229

0
T.C.
(mV/K)
−1
−2
−3
−4
−5
10−1	1	10

ID (A)

VDS = 10 V.

Fig.4 Temperature coefficient of gate-source voltage as a function of drain current; typical values per section.

MGP230

60 handbook, halfpage

ID

(A)

40

20

0

0

5

10

15

20

VGS (V)

VDS = 10 V; Tj = 25 °C.

Fig.5 Drain current as a function of gate-source voltage; typical values per section.

MGP231

200 handbook, halfpage

RDSon

(mΩ)

150

100

50
0		50	100	150
				Tj (°C)

VGS = 10 V; ID = 8 A.

Fig.6 Drain-source on-state resistance as a function of junction temperature; typical values per section.

MGP234

1500

C (pF)

1000

Cis

500

Cos

0

0	10	20	30	40
				VDS (V)
VGS = 0; f = 1 MHz.
Fig.7	Input and output capacitance as functions
	of drain-source voltage; typical values per
	section.

2003 Sep 26

5

Philips Semiconductors	Product specification
VHF push-pull power MOS transistor	BLF368

MGP232

600 handbook, halfpage

Crs (pF)

400

200

0
0		10	20	30	40
					VDS (V)

VGS = 0; f = 1 MHz.

Fig.8 Feedback capacitance as a function of drain-source voltage; typical values per section.

APPLICATION INFORMATION FOR CLASS-AB OPERATION

Th = 25 °C; Rth mb-h = 0.15 K/W unless otherwise specified. RF performance in CW operation in a common source class-AB circuit. RGS = 536 Ω per section; optimum load impedance per section = 1.34 + j0.34 Ω; VDS = 32 V.

	MODE OF OPERATION	f	VDS	IDQ	PL	Gp	Gp(1)	ηD
		(MHz)	(V)	(mA)	(W)	(dB)	(dB)	(%)
	CW, class-AB	225	32	2 × 250	300	>12	>1	>55
						typ. 13.5	typ. 0.4	typ. 62
		225	28	2 × 250	300	typ. 13	typ. 0.7	typ. 68
		225	35	2 × 250	300	typ. 14	typ. 0.2	typ. 60
		175	28	2 × 250	300	typ. 15	typ. 0.5	typ. 70

Note

1.Assuming a third order amplitude transfer characteristic, 1 dB compression corresponds with 30% synchronized input/25% synchronized output compression in television service (negative modulation, CCIR system).

Ruggedness in class-AB operation

The BLF368 is capable of withstanding a load mismatch corresponding to VSWR = 10: 1 through all phases under the following conditions: VDS = 32 V; f = 225 MHz at rated output power.

2003 Sep 26

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