Philips blf346 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D058

BLF346

VHF power MOS transistor

Product specification
Supersedes data of 1996 Oct 02

2003 Sep 26

Philips Semiconductors Product specification

VHF power MOS transistor BLF346

FEATURES

• High power gain

• Easy power control

• Good thermal stability

• Gold metallization ensures excellent reliability.

APPLICATIONS

• Linear amplifier applications in television transmitters
and transposers.

DESCRIPTION

Silicon N-channel enhancement mode vertical D-MOS
transistor encapsulated in a 6-lead, SOT119A flange
package, with a ceramic cap. All leads are isolated from
the flange. A marking code, showing gate-source voltage
(VGS) information is provided for matched pair
applications. Refer to the General Section of the
associated Data Handbook for further information.

CAUTION

This productis supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A, and
SNW-FQ-302B.

PINNING - SOT119A

PIN DESCRIPTION

1 source
2 source
3 gate
4 drain
5 source
6 source

handbook, halfpage

1

3

Fig.1 Simplified outline and symbol.

2

4

g

65

MAM268

d
s

QUICK REFERENCE DATA

RF performance in a linear amplifier.

MODE OF

OPERATION

f

(MHz)

V

(V)

DS

Class-A 224.25 28 3

I

(A)

D

T

(°C)

h

P

(W)

L

G

p

(dB)

d

(dB)

70 >24 >14 −52
25 typ. 30 typ. 16.5 −52

im

(1)

Note

1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to

peak synchronization level.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

2003 Sep 26 2

Philips Semiconductors Product specification

VHF power MOS transistor BLF346

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GS

I

D

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

R

th mb-h

drain-source voltage − 65 V
gate-source voltage −±20 V
drain current (DC) − 13 A
total power dissipation Tmb≤ 25 °C − 130 W
storage temperature −65 +150 °C
junction temperature − 200 °C

thermal resistance from junction to

Tmb=25°C; P

= 130 W 1.35 K/W

tot

mounting base
thermal resistance from mounting

Tmb=25°C; P

= 130 W 0.2 K/W

tot

base to heatsink

50

handbook, halfpage

I

D

(A)

10

(1)

1

−1

10

110

(1) Current is this area may be limited by R
(2) Tmb=25°C.

Fig.2 DC SOAR.

(2)

VDS (V)

DSon.

MRA931

200

handbook, halfpage

P

tot

(W)

150

100

50

2

10

0

0 50 100 150

(1) Continuous operation.
(2) Short-time operation during mismatch.

(2)

(1)

MGG104

Th (°C)

Fig.3 Power derating curves.

2003 Sep 26 3

Philips Semiconductors Product specification

VHF power MOS transistor BLF346

CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

I

DSS

I

GSS

V

GSth

∆V

GS

g

fs

R

DSon

I

DSX

C

is

C

os

C

rs

drain-source breakdown voltage VGS= 0; ID=50mA 65 −−V
drain-source leakage current VGS= 0; VDS=28V −−2.5 mA
gate-source leakage current VGS= ±20 V; VDS=0 −−1µA
gate-source threshold voltage VDS= 10 V; ID=50mA 2 − 4.5 V
gate-source voltage difference

VDS= 10 V; ID=50mA −−100 mV

of matched pairs
forward transconductance VDS= 10 V; ID=5A 3 4.2 − S
drain-source on-state resistance VGS= 10 V; ID=5A − 0.2 0.3 Ω
on-state drain current VGS= 10 V; VDS=10V − 22 − A
input capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 225 − pF
output capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 180 − pF
feedback capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 25 − pF

VGS group indicator

GROUP

A 2.0 2.1 O 3.3 3.4

B 2.1 2.2 P 3.4 3.5
C 2.2 2.3 Q 3.5 3.6
D 2.3 2.4 R 3.6 3.7

E 2.4 2.5 S 3.7 3.8

F 2.5 2.6 T 3.8 3.9
G 2.6 2.7 U 3.9 4.0
H 2.7 2.8 V 4.0 4.1

J 2.8 2.9 W 4.1 4.2

K 2.9 3.0 X 4.2 4.3

L 3.0 3.1 Y 4.3 4.4
M 3.1 3.2 Z 4.4 4.5
N 3.2 3.3

LIMITS

(V)

GROUP

LIMITS

(V)

MIN. MAX. MIN. MAX.

2003 Sep 26 4

Philips Semiconductors Product specification

VHF power MOS transistor BLF346

handbook, halfpage

2

T.C.

(mV/K)

0

−2

−4

−6

−2

10

VDS=10V.

−1

10

110

ID (A)

Fig.4 Temperature coefficient of gate-source

voltageasafunctionofdraincurrent;typical
values.

MGG105

40

handbook, halfpage

I

D

(A)

30

20

10

0

0 5 10 20

VDS= 10 V; Tj=25°C.

MGG106

15

VGS (V)

Fig.5 Drain current as a function of gate-source

voltage; typical values.

340

handbook, halfpage

R

DS on

(mΩ)

280

220

160

0

30 150

ID= 5 A; VGS=10V.

60 90 120

Fig.6 Drain-source on-state resistance as a

function of junction temperature; typical
values.

MGG107

Tj (°C)

C

MRA930

is

DS

(V)V

800

C

(pF)

600

C

os

400

200

0

010203040

VGS= 0; f = 1 MHz.

Fig.7 Input and output capacitance as functions

of drain-source voltage; typical values.

2003 Sep 26 5

Philips Semiconductors Product specification

VHF power MOS transistor BLF346

300

handbook, halfpage

C

rs

(pF)

200

100

0

01020 40

VGS= 0; f = 1 MHz.

30

VDS (V)

Fig.8 Feedback capacitance as a function of

drain-source voltage; typical values.

MGG108

APPLICATION INFORMATION

RF performance in a linear amplifier (common source class-A circuit).
R

= 0.2 K/W; ZL= 1.1 + j0.2 Ω unless otherwise specified.

th mb-h

MODE OF

OPERATION

f

(MHz)

V

(V)

DS

I

(A)

D

T

h

(°C)

P

o sync

(W)

G

p

(dB)

d

(dB)

im

(1)

70 >24 >14 −52

Class-A 224.25 28 3

25 typ. 30 typ. 16.5 −52
70 typ. 20 typ. 14.5 −55
25 typ. 22 typ. 15 −55

Note

1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak synchronization level.

Ruggedness in class-A operation

The BLF346 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the
following conditions: V

= 28 V; f = 225 MHz at rated output power.

DS

2003 Sep 26 6

Philips Semiconductors Product specification

VHF power MOS transistor BLF346

−50

handbook, halfpage

d

im

(dB)

−55

−60

−65

−70

0 10203040

(1) Th=70°C.
(2) Th=25°C.

(1)

(2)

P

o sync

MGG109

(W)

Fig.9 Intermodulation distortion as a function of

peak synchronized output power.

handbook, full pagewidth

50 Ω
input

C4C2

C1

L1

L2

C3

L3

C5

R2

DUT

R1

C6

C7

R4

R3

Fig.10 Test circuit for class-A operation at f = 225 MHz.

2003 Sep 26 7

C10

L4

BLF346

C11 C15

C8

R5

C9

L6

V

V

DS

B

L7

L5

C12

C13

C14

C16

MGG113

50 Ω
output

L8

Philips Semiconductors Product specification

VHF power MOS transistor BLF346

List of components (see Figs 10 and 11).

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1 film dielectric trimmer 2to 18 pF 2222 809 09003
C2 multilayer ceramic chip capacitor;

note 1
C3, C15, C16 film dielectric trimmer 4 to 40 pF 2222 809 08002
C4, C5 multilayer ceramic chip capacitor;

note 1
C6, C12 multilayer ceramic chip capacitor;

note 1
C7, C8, C9 multilayer ceramic chip capacitor 100 nF, 50 V 2222 852 47104
C10, C11 multilayer ceramic chip capacitor;

note 1
C13 electrolytic capacitor 10 µF, 63 V 2222 030 38109
C14 multilayer ceramic chip capacitor;

note 1
L1 4 turns enamelled 0.7 mm copper

wire

L2 stripline; note 2 50 Ω length 49 mm;

L3, L4 stripline; note 2 31 Ω length 11.5 mm;

L5 2 turns enamelled 1.5 mm copper

wire

L6 grade 3B Ferroxcube RF choke 4312 020 36642
L7 stripline; note 2 31 Ω length 40 mm;

L8 3 turns enamelled 1.5 mm copper

wire

R1 metal film resistor 1 kΩ, 0.4 W 2322 151 71002
R2 metal film resistor 100 kΩ, 0.4 W 2322 151 71004
R3 10 turns cermet potentiometer 100 Ω
R4 metal film resistor 316 kΩ, 0.4 W 2322 153 53161
R5 metal film resistor 10 Ω, 0.4 W 2322 153 51009

10 pF, 500 V

56 pF, 500 V

680 pF, 500 V

43 pF, 500 V

27 pF, 500 V

42.4 nH length 4 mm;
int. dia. 3 mm;
leads 2 × 5mm

width 2.8 mm

width 6 mm

18.7 nH length 8 mm;
int. dia. 4 mm;
leads 2 × 5mm

width 6 mm

28.8 nH length 8 mm;
int. dia. 4 mm;
leads 2 × 5mm

Notes

1. American Technical Ceramics capacitor, type 100B or other capacitor of the same quality.

2. The striplines are on a double copper-clad printed-circuit board with epoxy fibre-glass dielectric (ε

1

⁄16 inch.

2003 Sep 26 8

= 4.5); thickness

r

Philips Semiconductors Product specification

VHF power MOS transistor BLF346

handbook, full pagewidth

70

L1

strap

strap

C2

mounting

screws

(8×)

C1

rivet

rivet

R2

150

strap

C9

rivet

rivet

+V

DS

L7

C13

C14

strap

C16

L8

C12

rivet

rivet

L6

R5

C8

L5

C10

L4

C11

rivet

rivet

R3

C7

C6

R1

C4

L2

C5

L3

C3

Dimensions in mm.
The circuit and components are situated on one side of the printed-circuit board, the other side being fully metallized, to serve as a ground plane. Earth

connections are made by means of copper straps and hollow rivets.

C15

MGG114

Fig.11 Component layout for 225 MHz class-A test circuit.

2003 Sep 26 9

Philips Semiconductors Product specification

VHF power MOS transistor BLF346

handbook, halfpage

4

Z

i

(Ω)

2

0

−2

−4

−6

160 180 200 220 240

Class-A operation; VDS= 28 V; ID= 3 A; PL= 30 W; Th=70°C.

r

i

x

i

MGG110

f (MHz)

Fig.12 Input impedance as a function of frequency

(series components); typical values.

handbook, halfpage

2

Z

L

(Ω)

1

0

160 180 200 220 240

Class-A operation; VDS= 28 V; ID= 3 A; PL= 30 W; Th=70°C.

R

L

X

L

MGG111

f (MHz)

Fig.13 Load impedance as a function of frequency

(series components); typical values.

handbook, halfpage

Fig.14 Definition of MOS impedance.

20

handbook, halfpage

G

p

(dB)

16

12

8

Z

i

Z

MBA379

L

4

0

160 180 200 220 240

Class-A operation; VDS= 28 V; ID= 3 A; PL= 30 W; Th=70°C.

MGG112

f (MHz)

Fig.15 Power gain as a function of frequency;

typical values.

2003 Sep 26 10

Philips Semiconductors Product specification

VHF power MOS transistor BLF346

BLF346 scattering parameters

VDS= 28 V; ID= 3000 mA; note 1.

f (MHz)

s

11

s

21

s

12

s

22

|s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ

100 0.91 −178.9 2.12 67.7 0.01 −0.6 0.88 −177.3
105 0.91 −179.0 2.01 66.6 0.01 −0.4 0.88 −177.4
110 0.92 −179.1 1.91 65.5 0.01 −0.1 0.88 −177.4
115 0.92 −179.2 1.81 64.5 0.01 0.2 0.88 −177.4
120 0.92 −179.3 1.72 63.5 0.01 0.5 0.89 −177.4
130 0.92 −179.5 1.56 61.5 0.01 1.3 0.89 −177.5
140 0.92 −179.7 1.43 59.6 0.01 2.5 0.89 −177.5
150 0.93 −179.9 1.31 58.0 0.01 4.1 0.90 −177.6
160 0.93 180.0 1.21 56.3 0.01 6.0 0.90 −177.7
170 0.93 179.8 1.12 54.7 0.01 8.2 0.90 −177.8
180 0.93 179.5 1.04 53.0 0.01 10.5 0.91 −177.9
190 0.93 179.3 0.97 51.2 0.01 13.0 0.91 −178.0
200 0.94 179.1 0.91 49.6 0.01 15.7 0.91 −178.1
225 0.94 178.5 0.77 46.1 0.01 23.9 0.92 −178.5
250 0.95 178.0 0.66 43.3 0.01 33.6 0.93 −178.9
275 0.95 177.4 0.58 40.1 0.01 43.6 0.94 −179.3
300 0.95 176.7 0.50 37.5 0.01 51.8 0.94 −179.7

350 0.96 175.5 0.40 33.5 0.01 65.7 0.95 179.4

400 0.97 174.8 0.32 30.6 0.01 74.5 0.96 178.4
450 0.97 173.6 0.27 27.7 0.01 80.0 0.97 177.4
500 0.98 172.5 0.22 25.8 0.02 83.0 0.97 176.4
600 0.99 170.3 0.16 24.0 0.02 86.7 0.98 174.6
700 1.00 168.2 0.13 24.7 0.03 88.5 0.99 172.8
800 1.05 165.0 0.10 27.6 0.03 90.1 0.99 170.9
900 1.03 158.5 0.09 31.5 0.04 91.0 1.00 168.9

1000 1.00 156.6 0.08 38.7 0.04 92.1 1.00 167.1

Note

1. For more extensive s-parameters see internet:
http://www.semiconductors.philips.com/markets/communications/wirelesscommunications/broadcast

2003 Sep 26 11

Philips Semiconductors Product specification

VHF power MOS transistor BLF346

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 6 leads SOT119A

A

F

q

U

1

H

1

b

2

2

H

U

2

A

1

b

4

3

1

b

e

0 5 10 mm

6

5

C

scale

w

2

p

w

3

B

M M

C

w

M M M

1

M

AB

D

1DU3

c

Q

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

A

UNIT

7.39

mm

6.32

0.291

inches

0.249

OUTLINE

VERSION

SOT119A 99-03-29

5.59

5.33

0.220

0.210

b

1

5.34

5.08

0.210

0.200

c

0.15

0.10

0.006

0.004

Db

12.86

12.59

0.505

0.496

D

1

12.83

12.57

0.505

0.495

REFERENCES

FH

eU

21.97

2.54

6.48

0.255

2.29

0.100

0.090

21.21

0.865

0.835

b

2

4.07

3.81

0.160

0.150

IEC JEDEC EIAJ

H

1

18.55

18.28

0.730

0.720

p

3.30

3.05

0.130

0.120

qw

Q

4.57

4.06

0.180

0.160

U

1

6.48

24.89

6.22

24.64

0.255

0.980

0.245

0.970

EUROPEAN

PROJECTION

2

12.32

12.07

0.485

0.475

2003 Sep 26 12

U

3

w

1

2

0.2518.42

0.0100.725 0.0100.020

ISSUE DATE

w

3

0.250.51

Philips Semiconductors Product specification

VHF power MOS transistor BLF346

DATA SHEET STATUS

LEVEL

DATA SHEET

STATUS

(1)

PRODUCT

STATUS

(2)(3)

DEFINITION

I Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

III Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

DEFINITIONS

DISCLAIMERS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseorat any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation or warranty that such applicationswillbe
suitable for the specified use without further testing or
modification.

Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomers using or selling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2003 Sep 26 13

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [email protected].

© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 613524/05/pp14 Date of release: 2003 Sep 26 Document order number: 9397 750 11601

SCA75