Philips blf248 DATASHEETS

DISCRETE SEMICONDUCTORS

DATA SH EET

BLF248

VHF push-pull power MOS
transistor

Product specification

September 1992

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF248

FEATURES

• High power gain

• Easy power control

• Good thermal stability

• Gold metallization ensures

excellent reliability.

DESCRIPTION

Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor, designed for large signal
amplifier applications in the VHF
frequency range.

The transistor is encapsulated in a
4-lead SOT262 A1 balanced flange
envelope, with two ceramic caps. The
mounting flange provides the
common source connection for the
transistors.

PINNING - SOT262 A1

PIN DESCRIPTION

1 drain 1
2 drain 2
3 gate 1
4 gate 2
5 source

PIN CONFIGURATION

alfpage

12

g
g

55

Top view

34

MSB008

2
1

MBB157

d

2

s

d

1

Fig.1 Simplified outline and symbol.

CAUTION

The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.

QUICK REFERENCE DATA

RF performance at T

MODE OF OPERATION

= 25 °C in a push-pull common source test circuit.

h

f

(MHz)

V

(V)

DS

P

(W)

L

G

P

(dB)

(%)

class-AB 225 28 300 > 10 > 55

175 28 300 typ. 13 typ. 67

September 1992 2

η

D

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF248

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).
Per transistor section unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

±V

GS

I

D

P

tot

T

stg

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE

R

th j-mb

R

th mb-h

drain-source voltage − 65 V
gate-source voltage − 20 V
DC drain current − 25 A
total power dissipation up to Tmb = 25 °C total device;

− 500 W

both sections equally loaded

storage temperature −65 150 °C

thermal resistance from
junction to mounting base

thermal resistance from
mounting base to heatsink

total device; both sections
equally loaded.

total device; both sections
equally loaded.

0.35 K/W

0.15 K/W

2

10

handbook, halfpage

I

D

(A)

(1)

10

1

110

(1) Current is this area may be limited by R
(2) Tmb = 25 °C.
Total device; both sections equally loaded.

Fig.2 DC SOAR.

MRA933

(2)

2

(V)

10

.

V

DS

DS(on)

600

handbook, halfpage

P

tot

(W)

400

200

0

0 50 100 150

(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.

(2)

(1)

Fig.3 Power/temperature derating curves.

MGP203

Th (°C)

September 1992 3

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF248

CHARACTERISTICS (per section)

T

= 25 °C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

∆V

GS

g

fs

g

fs1/gfs2

R

DS(on)

I

DSX

C

is

C

os

C

rs

drain-source breakdown voltage VGS = 0; ID = 100 mA 65 −−V
drain-source leakage current VGS = 0; VDS = 28 V −−5mA
gate-source leakage current ±VGS = 20 V; VDS = 0 −−1µA
gate-source threshold voltage ID = 100 mA; VDS = 10 V 2 − 4.5 V
gate-source voltage difference

ID = 100 mA; VDS = 10 V −−100 mV

of both transistor sections
forward transconductance ID = 8 A; VDS = 10 V 5 7.5 − S
forward transconductance ratio

ID = 8 A; VDS = 10 V 0.9 − 1.1

of both transistor sections
drain-source on-state resistance ID = 8 A; VGS = 10 V − 0.1 0.15 Ω
on-state drain current VGS = 10 V; VDS = 10 V − 37 − A
input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 500 − pF
output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 360 − pF
feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 46 − pF

handbook, halfpage

0

T.C.

(mV/K)

−1

−2

−3

−4

−5

−1

10

VDS= 10 V.

110

I

(A)

D

Fig.4 Temperature coefficient of gate-source

voltage as a function of drain current, typical
values per section.

MGP204

15

MGP205

VGS (V)

60

handbook, halfpage

I

D

(A)

40

20

0

0 5 10 20

VDS= 10 V; Tj=25°C.

Fig.5 Drain current as a function of gate-source

voltage, typical values per section.

September 1992 4