Philips BLF247B Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BLF247B

VHF push-pull power MOS
transistor

Product specification

Philips Semiconductors

August 1994

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF247B

FEATURES

• High power gain

• Easy power control

• Good thermal stability

• Withstands full load mismatch.

APPLICATIONS

• Large signal applications in the
VHF frequency range.

DESCRIPTION

Silicon N-channel enhancement
mode vertical D-MOS push-pull
transistor encapsulated in a 4-lead,
SOT262A1 balanced flange type
package with two ceramic caps. The
mounting flange provides the
common source connection for the
transistor.

PINNING - SOT262A1

PIN CONFIGURATION

12

d

g
g

55

Top view

34

MAM098

s

d

Fig.1 Simplified outline and symbol.

CAUTION

The device is supplied in a antistatic package. The gate-source input must
be protected against static charge during transport or handling.

WARNING

PIN DESCRIPTION

1 drain 1
2 drain 2
3 gate 1
4 gate 2
5 source

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.

QUICK REFERENCE DATA

RF performance at T

MODE OF OPERATION

= 25 °C in a common source test circuit.

h

f

(MHz)

V

(V)

DS

P

(W)

L

G

(dB)

p

(%)

CW, class-B 225 28 150 ≥12 ≥55

η

D

August 1994 2

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF247B

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per transistor section

V

DS

V

GS

I

D

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

R

th mb-h

drain-source voltage (DC) − 65 V
gate-source voltage −±20 V
drain current (DC) − 13 A
total power dissipation up to Tmb= 25 °C; total device;

− 280 W

both sections equally loaded
storage temperature −65 +150 °C
operating junction temperature − +200 °C

thermal resistance from junction to
mounting base

thermal resistance from mounting base
to heatsink

total device; both sections equally

loaded

total device; both sections equally

loaded

0.63 K/W

0.15 K/W

2

10

I

D

(A)

(1) (2)

10

1

Total device; both sections equally loaded.
(1) Current in this area may be limited by R
(2) Tmb=25°C.

101

Fig.2 DC SOAR.

V (V)

DS

.

DSon

MBD287

400

P

tot

(W)

300

(2)

200

(1)

100

2

10

0

040

Total device; both sections equally loaded.
(1) Continuous operation.
(2) Short-time operation during mismatch.

80 120 160

MBD288

o

T ( C)

h

Fig.3 Power derating curves.

August 1994 3

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF247B

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Per transistor section

V

(BR)DSS

I

DSS

I

GSS

V

GSth

g

fs

R

DSon

I

DSX

C

is

C

os

C

rs

drain-source breakdown
voltage

drain-source leakage current VGS= 0; VDS=28V −−2.5 mA
gate-source leakage current VGS= ±20 V; VDS=0 −−1µA
gate-source threshold voltage ID= 50 mA; VDS=10V 2 − 4.5 V
forward transconductance ID= 5 A; VGS=10V 3 4.2 − S
drain-source on-state

resistance
drain cut-off current VGS= 10 V; VDS=10V − 22 − A
input capacitance VGS= 0; VDS=28V; f=1MHz − 225 − pF
output capacitance VGS= 0; VDS=28V; f=1MHz − 180 − pF
reverse transfer capacitance VGS= 0; VDS=28V; f=1MHz − 25 − pF

ID= 50 mA; VGS=0 65 −−V

ID= 5 A; VGS=10V − 0.2 0.3 Ω

handbook, halfpage

1

TC

(mV/K)

0

1

2

3

4

5

10

VDS=10V.

2

1

10

110

Fig.4 Temperature coefficient of gate-source

voltage as a function of drain current,
typical values per section.

I (A)

D

MBD298

15

MBD299

V (V)

GS

40

I

D

(A)

30

20

10

0

0 5 10 20

VDS=10V.

Fig.5 Drain current as a function of gate-source

voltage, typical values per section.

August 1994 4

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF247B

400

handbook, halfpage

R

DSon

(Ω)

300

200

100

0

050

ID= 5A; VGS=10V.

100

Fig.6 Drain-source on-state resistance as a

function of junction temperature, typical
values per section.

MBD297

o

T ( C)

j

150

C

MRA930

is

DS

(V)V

800

C

(pF)

600

C

os

400

200

0

010203040

VGS= 0; f = 1 MHz.

Fig.7 Input and output capacitance as functions

of drain-source voltage, typical values
per section.

300

C

rs

(pF)

200

100

0

0

VGS= 0; f = 1 MHz.

10 20 30 40

MBD296

V (V)

DS

Fig.8 Reverse transfer capacitance as a

function of drain-source voltage, typical
values per section.

August 1994 5