Philips BLF246B Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
dbook, halfpage
M3D075
BLF246B
VHF push-pull power MOS
transistor
Product specification
Supersedes data of October 1992
1999 Jan 28
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF246B
FEATURES
• High power gain
• Easy power control
• Good thermal stability
• Gold metallization ensures
excellent reliability.
APPLICATIONS
Large signal applications in the VHF
frequency range.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS push-pull
transistor encapsulated in an 8-lead
SOT161A balanced flange package
with a ceramic cap. All leads are
isolated from the flange.
PINNING - SOT161A
PIN CONFIGURATION
ndbook, halfpage
d
MBB157
2
s
d
1
1
3
5
78
Top view
2
4
6
MBC826
g
2
g
1
Fig.1 Simplified outline and symbol.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by
electrostatic discharge during transport and handling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
PIN DESCRIPTION
1 source
2 source
3 drain 1
4 gate 1
5 drain 2
6 gate 2
7 source
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
WARNING
8 source
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
=25°C in a push-pull common source test circuit.
h
f
(MHz)
V
(V)
DS
P
(W)
L
G
(dB)
p
(%)
CW, class-AB 175 28 60 >14 >55
η
D
1999 Jan 28 2
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF246B
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor section unless otherwise specified
V
DS
V
GS
I
D
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb
R
th mb-h
drain-source voltage − 65 V
gate-source voltage −±20 V
drain current (DC) − 8A
total power dissipation Tmb≤ 25 °C total device; both sections equally loaded − 130 W
storage temperature −65 +150 °C
junction temperature − 200 °C
thermal resistance from junction to
mounting base
thermal resistance from mounting base
to heatsink
total device; both sections equally
loaded
total device; both sections equally
loaded
1.35 K/W
0.25 K/W
50
handbook, halfpage
I
D
(A)
10
(1)
1
−1
10
110
(1) Current in this area may be limited by R
(2) Tmb=25°C.
Total device; both sections equally loaded.
Fig.2 DC SOAR.
(2)
VDS (V)
DSon
120
MGR738
Th (°C)
MRA932
2
10
.
160
handbook, halfpage
P
tot
(W)
120
80
40
0
0 40 80 160
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
(2)
(1)
Fig.3 Power/temperature derating curves.
1999 Jan 28 3
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF246B
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor section
V
(BR)DSS
I
DSS
I
GSS
V
GSth
g
fs
R
DSon
I
DSX
C
is
C
os
C
rs
drain-source breakdown voltage VGS= 0; ID=10mA 65 −−V
drain-source leakage current VGS= 0; VDS=28V −−2mA
gate-source leakage current VGS= ±20 V; VDS=0 −−1µA
gate-source threshold voltage ID= 10 mA; VDS=10V 2 − 4.5 V
forward transconductance ID= 1.5 A; VDS= 10 V 1.2 1.8 − S
drain-source on-state resistance ID= 1.5 A; VGS=10V − 0.4 0.75 Ω
on-state drain current VGS= 10 V; VDS=10V − 10 − A
input capacitance VGS= 0; VDS=28V; f=1MHz − 125 − pF
output capacitance VGS= 0; VDS=28V; f=1MHz − 75 − pF
feedback capacitance VGS= 0; VDS=28V; f=1MHz − 11 − pF
handbook, halfpage
6
T.C.
(mV/K)
4
2
0
−2
−4
−6
10 10
VDS=10V.
2
3
10
ID (mA)
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current; typical
values per section.
MGR739
12
handbook, halfpage
I
D
(A)
8
4
4
10
0
020
VDS=10V.
10
Tj = 25 °C
125 °C
VGS (V)
MGR740
Fig.5 Drain current as a function of gate-source
voltage; typical values per section.
1999 Jan 28 4
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF246B
0.8
handbook, halfpage
R
DSon
(Ω)
0.6
0.4
0.2
0
0 40 80 160
VGS= 10V; ID= 1.5 A.
120
Fig.6 Drain-source on-state resistance as a
function of junction temperature; typical
values per section.
MGR741
Tj (°C)
30
C
is
C
os
VDS (V)
MGR742
240
handbook, halfpage
C
(pF)
180
120
60
0
01020 40
VGS= 0; f = 1 MHz.
Fig.7 Input and output capacitance as functions
of drain-source voltage; typical values per
section.
24
handbook, halfpage
C
rs
(pF)
18
12
6
0
01020 40
VGS= 0; f = 1 MHz.
30
VDS (V)
Fig.8 Feedback capacitance as a function of
drain-source voltage; typical values per
section.
MGR743
1999 Jan 28 5
Loading...