Philips blf246b Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

ndbook, halfpage

M3D075

BLF246B

VHF push-pull power MOS
transistor

Product specification
Supersedes data of 2001 Oct 10

2003 Aug 04

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF246B

FEATURES

• High power gain

• Easy power control

• Good thermal stability

• Gold metallization ensures

excellent reliability.

APPLICATIONS

Large signal applications in the VHF
frequency range.

DESCRIPTION

Dual silicon N-channel enhancement
mode vertical D-MOS push-pull
transistor encapsulated in an 8-lead
SOT161A balanced flange package
with a ceramic cap. All leads are
isolated from the flange.

PINNING - SOT161A

PIN DESCRIPTION

1 source
2 source
3 drain 1
4 gate 1
5 drain 2
6 gate 2
7 source
8 source

PIN CONFIGURATION

Top view

2468

1357

MBC826

d

2

g

2

g

1

MBB157

s

d

1

andbook, halfpage

Fig.1 Simplified outline and symbol.

CAUTION

This product is supplied in anti-static packing to prevent damage caused by
electrostaticdischargeduringtransportandhandling.Forfurtherinformation,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.

QUICK REFERENCE DATA

RF performance at Th=25°C in a push-pull common source test circuit.

MODE OF OPERATION

f

(MHz)

V

(V)

DS

P

(W)

L

G

(dB)

p

(%)

CW, class-AB 175 28 60 >14 >55

2003 Aug 04 2

η

D

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF246B

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per transistor section unless otherwise specified

V

DS

V

GS

I

D

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

R

th mb-h

drain-source voltage − 65 V
gate-source voltage −±20 V
drain current (DC) − 8A
total power dissipation Tmb≤ 25 °C total device; both sections equally loaded − 130 W
storage temperature −65 +150 °C
junction temperature − 200 °C

thermal resistance from junction to
mounting base

thermal resistance from mounting base
to heatsink

total device; both sections equally
loaded

total device; both sections equally
loaded

1.35 K/W

0.25 K/W

50

handbook, halfpage

I

D

(A)

10

(1)

1

−1

10

110

(1) Current in this area may be limited by R
(2) Tmb=25°C.
Total device; both sections equally loaded.

Fig.2 DC SOAR.

(2)

VDS (V)

DSon

MRA932

2

10

.

160

handbook, halfpage

P

tot

(W)

120

80

40

0

0 40 80 160

(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.

(2)

(1)

120

MGR738

Th (°C)

Fig.3 Power derating curves.

2003 Aug 04 3

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF246B

CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Per transistor section

V

(BR)DSS

I

DSS

I

GSS

V

GSth

g

fs

R

DSon

I

DSX

C

is

C

os

C

rs

drain-source breakdown voltage VGS= 0; ID=10mA 65 −−V
drain-source leakage current VGS= 0; VDS=28V −−2mA
gate-source leakage current VGS= ±20 V; VDS=0 −−1µA
gate-source threshold voltage ID= 10 mA; VDS=10V 2 − 4.5 V
forward transconductance ID= 1.5 A; VDS= 10 V 1.2 1.8 − S
drain-source on-state resistance ID= 1.5 A; VGS=10V − 0.4 0.75 Ω
on-state drain current VGS= 10 V; VDS=10V − 10 − A
input capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 125 − pF
output capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 75 − pF
feedback capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 11 − pF

VGS group indicator

GROUP

A 2.0 2.1 O 3.3 3.4
B 2.1 2.2 P 3.4 3.5
C 2.2 2.3 Q 3.5 3.6
D 2.3 2.4 R 3.6 3.7
E 2.4 2.5 S 3.7 3.8

F 2.5 2.6 T 3.8 3.9
G 2.6 2.7 U 3.9 4.0
H 2.7 2.8 V 4.0 4.1

J 2.8 2.9 W 4.1 4.2
K 2.9 3.0 X 4.2 4.3

L 3.0 3.1 Y 4.3 4.4
M 3.1 3.2 Z 4.4 4.5
N 3.2 3.3

LIMITS

(V)

GROUP

LIMITS

(V)

MIN. MAX. MIN. MAX.

2003 Aug 04 4

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF246B

handbook, halfpage

6

T.C.

(mV/K)

4

2

0

−2

−4

−6

10 10

VDS=10V.

2

3

10

ID (mA)

Fig.4 Temperature coefficient of gate-source

voltageasafunctionofdraincurrent;typical
values per section.

MGR739

12

handbook, halfpage

I

D

(A)

8

4

4

10

0

020

VDS=10V.

10

Tj = 25 °C

125 °C

VGS (V)

MGR740

Fig.5 Drain current as a function of gate-source

voltage; typical values per section.

0.8

handbook, halfpage

R

DSon

(Ω)

0.6

0.4

0.2

0

0 40 80 160

VGS= 10 V; ID= 1.5 A.

120

Fig.6 Drain-source on-state resistance as a

function of junction temperature; typical
values per section.

MGR741

Tj (°C)

30

C

is

C

os

VDS (V)

MGR742

240

handbook, halfpage

C

(pF)

180

120

60

0

01020 40

VGS= 0; f = 1 MHz.

Fig.7 Input and output capacitance as functions

of drain-source voltage; typical values per
section.

2003 Aug 04 5

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF246B

24

handbook, halfpage

C

rs

(pF)

18

12

6

0

01020 40

VGS= 0; f = 1 MHz.

30

VDS (V)

Fig.8 Feedback capacitance as a function of

drain-source voltage; typical values per
section.

MGR743

APPLICATION INFORMATION

RF performance in CW operation in a push-pull, common source, class-B circuit. Th=25°C; R

th mb-h

= 0.25 K/W;

unless otherwise specified.

MODE OF OPERATION

f

(MHz)

V

(V)

DS

I

DQ

(mA)

P

(W)

L

G

p

(dB)

η

(%)

D

CW, class-B 175 28 2 × 50 60 >14 >55

typ. 19 typ. 65

Ruggedness in class-B operation

The BLF246B is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the
following conditions: V

= 28 V; f = 175 MHz at rated output power.

DS

2003 Aug 04 6

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF246B

60

MGR744

PL (W)

25

handbook, halfpage

G

p

(dB)

20

15

10

5

0

02040 80

Class-B operation; VDS= 28 V; IDQ=2×50 mA;

= 4.6 + j5 Ω; f = 175 MHz.

Z

L

G

p

η

D

Fig.9 Power gain and efficiency as a function of

load power; typical values per section.

100

80

60

40

20

0

η

(%)

100

handbook, halfpage

P

D

L

(W)

80

60

40

20

0

Class-B operation; VDS= 28 V; IDQ=2×50 mA;

= 4.6 + j5 Ω; f = 175 MHz.

Z

L

0.5 1.0 1.5 2.0

0 2.5

MGR745

PIN (W)

Fig.10 Load power as a function of input power;

typical values per section.

2003 Aug 04 7

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF246B

handbook, full pagewidth

50 Ω
input

+V

L12

D

C11

C12

C13

C14

C15

L13

L10

L16

C21 C22 C23 C24

L11

L17

L14

C16

C17

R7

L18

L19

R8

L20

L21

C25

C26

L22

L23

L24

50 Ω

output

+V

R1

R2

R5

G

C7

C8

C6C4 C5

R3

C1

L1

L2

C2

L3

C3

L4

L5

L6L7L8

L9

C10

C9

+V

G

R4

f = 175 MHz.

Fig.11 Test circuit for class-B operation.

2003 Aug 04 8

R6

L15

+V

C18

C19

C20

MGR749

D

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF246B

List of components class-B test circuit (see Figs 11 and 12)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.

C1, C2, C25, C26 multilayer ceramic chip capacitor; note 1 91 pF
C3 film dielectric trimmer 4 to 40 pF 2222 809 08002
C4 multilayer ceramic chip capacitor; note 1 180 pF
C5, C22, C24 film dielectric trimmer 5 to 60 pF 2222 809 08003
C6 multilayer ceramic chip capacitor; note 2 100 pF
C7, C9, C12,

C14, C17, C19
C8, C10 multilayer ceramic chip capacitor; note 1 680 pF
C11, C20 multilayer ceramic chip capacitor 10 nF 2222 852 47103
C13, C18 electrolytic capacitor 10 µF, 63 V
C15, C16, C21 multilayer ceramic chip capacitor; note 1 82 pF
C23 multilayer ceramic chip capacitor; note 1 33 pF
L1, L3, L22, L24 stripline; note 3 55 Ω 111 × 2.5 mm
L2, L23 semi-rigid cable 50 Ω length 111 mm

L4, L5 stripline; note 3 50 Ω 38 × 2.8 mm
L6, L7 stripline; note 3 50 Ω 9 × 2.8 mm
L8, L9 stripline; note 3 50 Ω 8 × 2.8 mm
L10, L11 stripline; note 3 50 Ω 11 × 2.8 mm
L12, L15 grade 3B Ferroxcube wideband

L13, L14 4 turns enamelled 1 mm copper wire 50 nH length 6.5 mm

L16, L17 stripline; note 3 50 Ω 16 × 2.8 mm
L18, L19 stripline; note 3 50 Ω 25 × 2.8 mm
L20, L21 stripline; note 3 50 Ω 3 × 2.8 mm
R1, R2 metal film resistor 0.4 W, 10 Ω
R3, R4 10 turns potentiometer 50 kΩ
R5, R6 metal film resistor 0.4 W, 205 kΩ
R7, R8 metal film resistor 1 W, 21.5 Ω

multilayer ceramic chip capacitor; note 1 100 nF 2222 852 47104

ext. dia 2.2 mm

4312 020 36642

HF choke

int. dia. 4 mm
leads 2 × 5mm

Notes

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.

3. The striplines are on a double copper-clad printed-circuit board with epoxy glass dielectric (εr= 4.5); thickness

1

⁄16inch. The other side of the board is fully metallized and used as a ground plane. The ground planes on each side

of the board are connected together by means of copper straps and hollow rivets.

2003 Aug 04 9

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF246B

handbook, full pagewidth

110

strap

strap

rivet

L1 + L2

C1

C2

C3

200

R7

+V

D

C12

L18
L19

rivet

C13

rivet

C23

C24

strap

rivet

strap

L22

L20

C25
C26

L21

rivet

strapstrap

strap strap

rivet

+V

G

L12

C11

C14

C6

L8
L9

L10
L11

C15

C16

L16
L17

L13

L14

C21

C22

C7
C8

R1

C4

C5

R2

C10

C9

L6
L7

L4
L5

L15

C19

R3

+V

C20

C18

D

C17

L3

+V

G

Dimensions in mm.
The circuit and components aresituatedon one side of the PTFE fibre-glass board, the other side beingfullymetallized,to serve as a ground plane.

Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets.

L23 + L24

MGR750

Fig.12 Component layout for 175 MHz class-B test circuit.

2003 Aug 04 10

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF246B

300

MGR746

f (MHz)

10

handbook, halfpage

Z

i

(Ω)

r

5

0

−5

Class-B operation; VDS= 28 V; IDQ=2×50 mA;

=10Ω; PL= 60 W (total device).

R

GS

i

x

i

0 100 200 400

Fig.13 Input impedance as a function of frequency

(series components); typical values per
section.

300

MGR747

f (MHz)

15

handbook, halfpage

Z

L

(Ω)

10

5

0

Class-B operation; VDS= 28 V; IDQ=2×50 mA;

=10Ω; PL= 60 W (total device).

R

GS

R

L

X

L

0 100 200 400

Fig.14 Load impedance as a function of frequency

(series components); typical values per
section.

handbook, halfpage

Fig.15 Definition of MOS impedance.

3000

MGR748

f (MHz)

25

handbook, halfpage

G

p

(dB)

20

15

10

Z

i

Z

MBA379

L

5

0

Class-B operation; VDS= 28 V; IDQ=2×50 mA;

=10Ω; PL= 60 W (total device).

R

GS

100 200 400

Fig.16 Power gain as a function of frequency;

typical values per section.

2003 Aug 04 11

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF246B

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 8 leads SOT161A

D

A

F

D

1

U

1

q

scale

w

2

p

w

3

H

1

b

4

U

H

2

A

123

e

8

6

5

7

b

1

e

1

0 5 10 mm

C

M M

C

M

B

w

M M M

AB

1

E

1

c

E

Q

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

inches

A

7.27

6.47

0.286

0.255

OUTLINE

VERSION

SOT161A

2.93

2.66

0.115

0.105

c

b

1

2.04

1.77

0.080

0.070

Db

10.22

0.18

10.00

0.10

0.402

0.007

0.394

0.004

IEC JEDEC EIAJ

D

1

10.21

9.94

0.402

0.391

E

10.21

10.00

0.402

0.394

E

10.21

9.94

0.402

0.391

REFERENCES

e

1

3.80

0.150

F

e

1

2.70

3.50

2.08

0.106

0.138

0.082

2003 Aug 04 12

H

16.81

16.21

0.662

0.638

H

1

12.83

12.57

0.505

0.495

p

3.33

3.07

0.131

0.121

qw

Q

4.32

4.06

0.170

0.160

U

1

24.97

18.42

24.71

0.983

0.973

EUROPEAN

PROJECTION

w

U

1

2

10.34

10.08

0.407

0.397

ISSUE DATE

99-03-29
99-10-04

2

0.250.25 0.51

0.0100.010 0.0200.725

w

3

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF246B

DATA SHEET STATUS

LEVEL

DATA SHEET

STATUS

(1)

PRODUCT

STATUS

(2)(3)

DEFINITION

I Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

III Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

DEFINITIONS

DISCLAIMERS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.

Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to resultin personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2003 Aug 04 13

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Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [email protected].

© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 613524/07/pp14 Date of release: 2003 Aug 04 Document order number: 9397 750 11598

SCA75