Philips blf246 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D060

BLF246

VHF power MOS transistor

Product specification
Supersedes data of 1996 Oct 21

2003 Aug 05

Philips Semiconductors Product specification

VHF power MOS transistor BLF246

FEATURES

• High power gain

• Low noise figure

• Easy power control

• Good thermal stability

• Withstands full load mismatch.

APPLICATIONS

• Large signalamplifier applications in the VHF frequency
range.

DESCRIPTION

Silicon N-channel enhancement mode vertical D-MOS
transistor encapsulated in a 4-lead, SOT121B flange
packagewith aceramic cap.Allleads areisolated fromthe
flange. A marking code, showing gate-source voltage
(VGS) information is provided for matched pair
applications. Refer to the “General” section of the
handbook for further information.

CAUTION

PINNING - SOT121B

PIN DESCRIPTION

1 drain
2 source
3 gate
4 source

handbook, halfpage

14

g

32

MAM267

d
s

This productis supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A, and

Fig.1 Simplified outline and symbol.

SNW-FQ-302B.

QUICK REFERENCE DATA

RF performance at Th=25°C in a common source test circuit.

MODE OF OPERATION

f

(MHz)

V

(V)

DS

P

(W)

L

G

(dB)

p

η

D

(%)

CW, class-B 108 28 80 ≥16 ≥55

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. Afteruse, dispose ofas chemical orspecial waste accordingto the regulationsapplying at thelocation of
the user. It must never be thrown out with the general or domestic waste.

2003 Aug 05 2

Philips Semiconductors Product specification

VHF power MOS transistor BLF246

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GS

I

D

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-mb

R

th mb-h

drain-source voltage − 65 V
gate-source voltage −±20 V
DC drain current − 13 A
total power dissipation T

≤ 25 °C − 130 W

amb

storage temperature −65 +150 °C
junction temperature − 200 °C

thermal resistance from junction to mounting base 1.35 K/W
thermal resistance from mounting base to heatsink 0.2 K/W

50

handbook, halfpage

I

D

(A)

10

(1)

1

−1

10

110

(1) Current is this area may be limited by R
(2) Tmb=25°C.

Fig.2 DC SOAR.

(2)

VDS (V)

.

DSon

MRA931

200

handbook, halfpage

P

tot

(W)

150

100

50

2

10

0

0 50 100 150

(1) Continuous operation.
(2) Short-time operation during mismatch.

(2)

(1)

MGG104

Th (°C)

Fig.3 Power derating curves.

2003 Aug 05 3

Philips Semiconductors Product specification

VHF power MOS transistor BLF246

CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

I

DSS

I

GSS

V

GSth

∆V

GS

g

fs

R

DSon

I

DSX

C

is

C

os

C

rs

drain-source breakdown voltage VGS= 0; ID=50mA 65 −−V
drain-source leakage current VGS= 0; VDS=28V −−2.5 mA
gate-source leakage current VGS= ±20 V; VDS=0 −−1µA
gate-source threshold voltage ID= 50 mA; VDS=10V 2 − 4.5 V
gate-source voltage difference of

ID= 50 mA; VDS=10V −−100 mV

matched pairs
forward transconductance ID= 2.5 A or 5 A; VDS=10V 3 4.2 − S
drain-source on-state resistance ID= 5 A; VGS=10V − 0.2 0.3 Ω
on-state drain current VGS= 10 V; VDS=10V − 22 − A
input capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 225 − pF
output capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 180 − pF
feedback capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 25 − pF

VGS group indicator

GROUP

A 2.0 2.1 O 3.3 3.4
B 2.1 2.2 P 3.4 3.5
C 2.2 2.3 Q 3.5 3.6
D 2.3 2.4 R 3.6 3.7
E 2.4 2.5 S 3.7 3.8
F 2.5 2.6 T 3.8 3.9
G 2.6 2.7 U 3.9 4.0
H 2.7 2.8 V 4.0 4.1

J 2.8 2.9 W 4.1 4.2
K 2.9 3.0 X 4.2 4.3
L 3.0 3.1 Y 4.3 4.4

M 3.1 3.2 Z 4.4 4.5
N 3.2 3.3

LIMITS

(V)

GROUP

LIMITS

(V)

MIN. MAX. MIN. MAX.

2003 Aug 05 4

Philips Semiconductors Product specification

VHF power MOS transistor BLF246

handbook, halfpage

2

T.C.

(mV/K)

0

−2

−4

−6

−2

10

VDS= 10 V; valid for Th= 25 to 70 °C.

−1

10

110

ID (A)

Fig.4 Temperature coefficient of gate-source

voltageas afunctionof drain current;typical
values.

MGG105

40

handbook, halfpage

I

D

(A)

30

20

10

0

0 5 10 20

VDS= 10 V; Tj=25°C.

MGG106

15

VGS (V)

Fig.5 Drain current as a function of gate-source

voltage; typical values.

400

handbook, halfpage

R

DSon

(Ω)

300

200

100

0

050

VGS= 10 V; ID=5A.

100

T ( C)

j

Fig.6 Drain-source on-state resistance as a

function of junction temperature; typical
values.

MBD297

o

150

C

MRA930

is

DS

(V)V

800

C

(pF)

600

C

os

400

200

0

010203040

VGS= 0; f = 1 MHz.

Fig.7 Input and output capacitance as functions

of drain-source voltage; typical values.

2003 Aug 05 5

Philips Semiconductors Product specification

VHF power MOS transistor BLF246

300

handbook, halfpage

C

rs

(pF)

200

100

0

01020 40

VGS= 0; f = 1 MHz.

30

Fig.8 Feedback capacitance as a function of

drain-source voltage; typical values.

MGG108

VDS (V)

APPLICATION INFORMATION

RF performance in CW operation in a common source test circuit.
Th=25°C; R

MODE OF OPERATION

= 0.2 K/W; RGS=12Ω unless otherwise specified.

th mb-h

f

(MHz)

V

(V)

DS

I

(A)

D

P

L

(W)

G

(dB)

p

η

D

(%)

CW, class-B 108 28 0.1 80 >16 >55
CW, class-B 108 28 0.1 80 typ. 18 typ. 65
CW, class-C 108 28 0

(1)

80 typ. 15 typ. 72

Note

1. V

= 0 (class-C).

GS

Ruggedness in class-B operation

The BLF246 is capable of withstanding a load mismatch corresponding to VSWR = 50: 1 through all phases under the
following conditions: V

= 28 V; f = 108 MHz; Th=25°C; R

DS

= 0.2 K/W at rated output power.

th mb-h

Noise figure

Measured with 80 W power-matched source and load in the test circuit (see Fig.9) with VDS= 28 V; ID=2A;
f = 108 MHz; RGS=27Ω; Th=25°C; R

= 0.2 K/W; F = typ. 3 dB.

th mb-h

2003 Aug 05 6

Philips Semiconductors Product specification

VHF power MOS transistor BLF246

20

handbook, halfpage

G

p

(dB)

10

0

0 150100

Class-B operation; VDS= 28 V; IDQ= 0.1 A; RGS=12Ω;
f = 108 MHz; T

h

=25°C; R

50

th mb-h

G

p

η

D

= 0.2 K/W.

MGG096

PL (W)

Fig.9 Power gain and efficiency as functions of

load power; typical values.

100

η

(%)

50

0

150

handbook, halfpage

P

L

D

(W)

100

50

50

053412

Class-B operation; VDS= 28 V; IDQ= 0.1 A; RGS=12Ω;
f = 108 MHz; T

=25°C; R

h

th mb-h

= 0.2 K/W.

MGG095

PIN (W)

Fig.10 Load power as a function of input power;

typical values.

handbook, full pagewidth

DUT

input

50Ω

C1

C10

C2

C11

L1

L2

C3

L3

R1

C4

R2

V

G

Fig.11 Test circuit for class-B operation at 108 MHz.

2003 Aug 05 7

L4

C5

L6 L8

L5

C12

C6

R3

L7

C8

C13
C14

C7

C9

V

output
50Ω

DS

MGG097

Philips Semiconductors Product specification

VHF power MOS transistor BLF246

List of components (see Figs 11 and 12).

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C4, C5, C8,
C14

C2, C3, C6, C7 film dielectric trimmer 5 to 60 pF 2222 809 08003
C9 electrolytic capacitor 2.2 µF, 63 V 2222 030 38228
C10 multilayer ceramic chip capacitor;

C11 multilayer ceramic chip capacitor;

C12 multilayer ceramic chip capacitor;

C13 multilayer ceramic chip capacitor;

L1 5 turns enamelled 0.6 mm copper

L2 2 turns enamelled 0.6 mm copper

L3, L4 stripline; note 2 31 Ω length 13 mm

L5 3 turns enamelled 1.6 mm copper

L6 hairpin of enamelled 1.6 mm

L7 grade 3B Ferroxcube HF choke 4312 020 36640
L8 3 turns enamelled 1.6 mm copper

R1 metal film resistor 2 × 24 Ω in

R2 metal film resistor 100 kΩ, 0.4 W
R3 metal film resistor 10 Ω, 0.4 W

multilayer ceramic chip capacitor 100 nF 2222 852 47104

68pF+39pF

note 1

note 1

note 1

note 1

wire

wire

wire

copper wire

wire

in parallel
69 pF + 100 pF

in parallel
2x 100 pF

in parallel
62 pF

52 nH length 6.5 mm

int. dia. 3 mm
leads 2 × 10 mm

19 nH length 3.5 mm

int. dia. 3 mm
leads 2 × 7.5 mm

width 6 mm

36 nH length 12 mm

int. dia. 6 mm
leads 2 × 5mm

14 nH length 20 mm

52 nH length 8 mm

int. dia. 6 mm
leads 2 × 9mm

parallel, 0.4 W

Notes

1. American Technical Ceramics capacitor, type 100B or other capacitor of the same quality.

2. The striplines are mounted on a double copper-clad PCB with epoxy fibre-glass dielectric (ε
thickness 1.6 mm.

2003 Aug 05 8

= 4.5),

r

Philips Semiconductors Product specification

VHF power MOS transistor BLF246

handbook, full pagewidth

70

STRAP

C1

C10

150

RIVET

STRAP

L7

+V

C9

DS

L8

C13

C14

C8

R2

+ V

G

C4

L1

C11

L2

R1

L3

C5

R3

L5

C12

L6

L4

C2

Dimensions in mm.

The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as a ground.
Earth connections are made by means of hollow rivets, whilst under the source leads, copper straps are used for a direct contact between the upper
and lower sheets.

C3

C6

C7

MGG098

Fig.12 Component layout for 108 MHz class-B test circuit.

2003 Aug 05 9

Philips Semiconductors Product specification

VHF power MOS transistor BLF246

150

MGG093

f (MHz)

handbook, halfpage

5

Z

i

(Ω)

0

−5

−10

−15

0 50 100 200

Class-B operation; VDS= 28 V; IDQ= 0.1 A; RGS=12Ω;

=80W;Th=25°C; R

P

L

th mb-h

r

i

x

i

= 0.2 K/W.

Fig.13 Input impedance as a function of frequency

(series components); typical values.

handbook, halfpage

6

Z

L

(Ω)

4

R

L

2

0

0 50 100 200150

Class-B operation; VDS= 28 V; IDQ= 0.1 A; RGS=12Ω;

=80W;Th=25°C; R

P

L

th mb-h

X

L

= 0.2 K/W.

MGG094

f (MHz)

Fig.14 Load impedance as a function of frequency

(series components); typical values.

40

handbook, halfpage

G

p

(dB)

30

20

10

0

0 50 100 200

Class-B operation; VDS= 28 V; IDQ= 0.1 A; RGS=12Ω;

=80W;Th=25°C; R

P

L

th mb-h

= 0.2 K/W.

150

f (MHz)

Fig.15 Power gain as a function of frequency;

typical values.

MGG092

2003 Aug 05 10

Philips Semiconductors Product specification

VHF power MOS transistor BLF246

BLF246 scattering parameters

VDS= 28 V; ID= 50 mA; note 1

f (MHz)

s

11

s

21

s

12

s

22

|s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ

5 0.83 −91.4 23.64 124.0 0.05 34.6 0.79 −88.1
10 0.75 −125.6 13.95 103.2 0.05 14.4 0.69 −122.2
20 0.73 −147.1 7.17 84.8 0.06 −2.7 0.68 −143.6
30 0.75 −154.3 4.64 73.4 0.05 −12.7 0.70 −150.6
40 0.78 −157.9 3.30 64.6 0.05 −20.1 0.73 −154.2
50 0.80 −160.3 2.48 57.5 0.04 −25.9 0.77 −156.7
60 0.83 −162.2 1.94 51.4 0.04 −30.5 0.80 −158.9
70 0.86 −164.1 1.56 46.1 0.04 −34.1 0.83 −160.8
80 0.88 −165.8 1.27 41.4 0.03 −36.8 0.85 −162.7
90 0.89 −167.3 1.06 37.6 0.03 −38.6 0.87 −164.3

100 0.91 −168.6 0.89 34.2 0.02 −39.6 0.89 −165.9
125 0.93 −171.7 0.62 27.1 0.02 −37.1 0.92 −169.3
150 0.95 −174.2 0.45 22.3 0.01 −20.7 0.94 −172.1
175 0.96 −176.6 0.34 19.3 0.01 24.3 0.95 −174.6
200 0.97 −178.3 0.27 17.4 0.01 62.3 0.96 −176.7
250 0.98 178.3 0.18 16.1 0.02 81.9 0.97 179.7
300 0.98 175.4 0.13 19.5 0.03 85.4 0.98 176.8

350 0.98 172.6 0.10 24.8 0.04 86.0 0.98 174.1

400 0.98 170.3 0.09 33.5 0.05 85.6 0.98 171.6
450 0.98 167.9 0.08 41.5 0.06 85.3 0.98 169.2
500 0.98 165.6 0.08 49.6 0.06 83.9 0.98 166.9
600 0.98 161.1 0.09 61.3 0.08 81.9 0.98 162.5
700 0.98 156.7 0.10 66.5 0.10 79.6 0.98 158.0
800 0.97 152.0 0.12 69.1 0.12 78.2 0.97 153.7
900 0.97 147.0 0.14 69.5 0.13 76.0 0.97 149.3

1000 0.96 142.0 0.16 70.1 0.16 74.3 0.97 144.8

Note

1. For more extensive S-parameters see internet:
http://www.semiconductors.philips.com.markets/communications/wirelesscommunicationms/broadcast.

2003 Aug 05 11

Philips Semiconductors Product specification

VHF power MOS transistor BLF246

BLF246 scattering parameters

VDS= 28 V; ID= 100 mA; note 1

f (MHz)

s

11

s

21

s

12

s

22

|s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ

5 0.81 −113.3 30.83 116.1 0.04 26.8 0.77 −111.3
10 0.77 −142.3 17.04 99.5 0.04 11.1 0.72 −140.7
20 0.76 −158.6 8.64 85.7 0.04 −0.8 0.71 −156.6
30 0.77 −163.5 5.67 77.3 0.04 −7.7 0.72 −161.5
40 0.79 −165.8 4.12 70.5 0.04 −12.7 0.74 −163.3
50 0.80 −167.2 3.18 64.6 0.03 −16.7 0.76 −164.5
60 0.82 −168.2 2.54 59.3 0.03 −19.9 0.78 −165.4
70 0.84 −169.2 2.08 54.5 0.03 −22.4 0.80 −166.3
80 0.85 −170.0 1.74 50.4 0.03 −24.0 0.82 −167.1
90 0.87 −170.9 1.48 46.6 0.02 −24.9 0.84 −168.0

100 0.88 −171.8 1.27 43.0 0.02 −25.1 0.86 −169.0
125 0.90 −173.9 0.90 35.4 0.02 −20.6 0.89 −171.3
150 0.92 −175.9 0.67 29.8 0.01 −5.0 0.91 −173.3
175 0.94 −177.8 0.51 26.0 0.01 24.7 0.93 −175.2
200 0.95 −179.6 0.41 22.7 0.01 52.6 0.94 −177.1
250 0.96 177.3 0.27 18.6 0.02 76.2 0.96 179.7
300 0.97 174.4 0.20 17.8 0.03 82.2 0.97 176.9

350 0.97 171.7 0.15 19.4 0.03 84.2 0.97 174.3

400 0.97 169.2 0.13 23.4 0.04 84.3 0.98 171.9
450 0.97 166.7 0.11 28.4 0.05 84.6 0.98 169.6
500 0.97 164.3 0.10 34.9 0.06 83.3 0.98 167.4
600 0.97 159.5 0.09 46.8 0.07 81.6 0.98 163.1
700 0.96 154.5 0.10 55.1 0.09 79.5 0.98 158.8
800 0.96 149.3 0.11 61.0 0.10 78.8 0.98 154.5
900 0.95 143.6 0.12 63.0 0.11 76.3 0.97 150.0

1000 0.92 136.3 0.12 67.1 0.12 78.0 0.97 145.2

Note

1. For more extensive S-parameters see internet:
http://www.semiconductors.philips.com.markets/communications/wirelesscommunicationms/broadcast.

2003 Aug 05 12

Philips Semiconductors Product specification

VHF power MOS transistor BLF246

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 4 leads SOT121B

D

A

F

D

1

q

U

1

C

B

H

b

43

α

p

12

H

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

inches

A

7.27

6.17

0.286

0.243

5.82

5.56

0.229

0.219

c

0.16

0.10

0.006

0.004

Db

12.86

12.59

0.506

0.496

D

1

12.83

12.57

0.505

0.495

F

2.67

2.41

0.105

0.095

28.45

25.52

1.120

1.005

0.130

0.120

pH

3.30

3.05

Q

4.45

3.91

0.175

0.154

q

18.42

0.725

w

MM

C

2

A

U

2

w

MMM

AB

1

0 5 10 mm

U

U

1

24.90

24.63

0.98

0.97

6.48

6.22

0.255

0.245

3

2

12.32

12.06

0.485

0.475

U

scale

w1w

0.25

0.01

c

3

Q

αU

2

0.51
45°

0.02

OUTLINE

VERSION

SOT121B 99-03-29

IEC JEDEC EIAJ

REFERENCES

EUROPEAN

PROJECTION

2003 Aug 05 13

ISSUE DATE

Philips Semiconductors Product specification

VHF power MOS transistor BLF246

DATA SHEET STATUS

LEVEL

DATA SHEET

STATUS

(1)

PRODUCT

STATUS

(2)(3)

DEFINITION

I Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

III Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For datasheets describingmultiple type numbers,the highest-levelproduct status determinesthe datasheet status.

DEFINITIONS

DISCLAIMERS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting valuesdefinition Limiting values givenare in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese orat any otherconditions abovethosegiven inthe
Characteristics sectionsof the specification isnot implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation orwarrantythat suchapplicationswill be
suitable for the specified use without further testing or
modification.

Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury.Philips
Semiconductorscustomers usingorselling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance. When theproduct isin fullproduction
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2003 Aug 05 14

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Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [email protected].

© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in thisdocument does not form partof any quotation or contract, is believed to be accurate and reliable and may be changed
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Printed in The Netherlands 613524/04/pp15 Date of release: 2003 Aug05 Document order number: 9397 750 11597

SCA75