Philips BLF245C, BLF245 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLF245
VHF power MOS transistor
Product specification
September 1992
Philips Semiconductors Product specification
VHF power MOS transistor BLF245
FEATURES
• High power gain
• Low noise figure
• Easy power control
• Good thermal stability
• Withstands full load mismatch.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the VHF frequency
range.
The transistor is encapsulated in a
4-lead SOT123 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
Matched gate-source voltage (V
GS
)
groups are available on request.
PINNING - SOT123
PIN CONFIGURATION
fpage
1
23
4
MSB057
g
MBB072
d
s
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
PIN DESCRIPTION
1 drain
2 source
3 gate
4 source
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
= 25 °C in a class-B test circuit.
h
f
(MHz)
V
(V)
DS
P
(W)
L
G
(dB)
p
(%)
CW, class-B 175 28 30 > 13 > 50
η
D
September 1992 2
Philips Semiconductors Product specification
VHF power MOS transistor BLF245
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
±V
GS
I
D
P
tot
T
stg
T
j
THERMAL RESISTANCE
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
R
th j-mb
R
th mb-h
drain-source voltage VGS=0 − 65 V
gate-source voltage VDS=0 − 20 V
DC drain current − 6A
total power dissipation up to Tmb = 25 °C − 68 W
storage temperature −65 150 °C
junction temperature − 200 °C
thermal resistance from
Tmb=25°C; P
= 68 W 2.6 K/W
tot
junction to mounting base
thermal resistance from
Tmb=25°C; P
= 68 W 0.3 K/W
tot
mounting base to heatsink
10
handbook, halfpage
I
D
(A)
10
(1) Current is this area may be limited by R
(2) Tmb=25°C.
(1)
1
−1
110
Fig.2 DC SOAR.
(2)
VDS (V)
DS(on)
.
MRA921
120
MGP167
Th (°C)
100
handbook, halfpage
P
tot
(W)
80
60
40
20
2
10
0
0 40 80 160
(1) Continuous operation.
(2) Short-time operation during mismatch.
(2)
(1)
Fig.3 Power/temperature derating curves.
September 1992 3
Philips Semiconductors Product specification
VHF power MOS transistor BLF245
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
∆V
GS
g
fs
R
DS(on)
I
DSX
C
is
C
os
C
rs
F noise figure (see Fig.14) input and output power matched for:
drain-source breakdown voltage VGS = 0; ID=10mA 65 −− V
drain-source leakage current VGS = 0; VDS = 28 V −−2mA
gate-source leakage current ±VGS = 20 V; VDS = 0 −−1 µA
gate-source threshold voltage ID = 10 mA; VDS = 10 V 2 − 4.5 V
gate-source voltage difference of
ID = 10 mA; VDS = 10 V −−100 mV
matched devices
forward transconductance ID = 1.5 A; VDS = 10 V 1.2 1.9 − S
drain-source on-state resistance ID = 1.5 A; VGS = 10 V − 0.4 0.75 Ω
on-state drain current VGS = 10 V; VDS = 10 V − 10 − A
input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 125 − pF
output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 75 − pF
feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 7 − pF
− 2 − dB
I
= 1 A; VDS=28V; PL=30W;
D
R1 = 1 kΩ; Th=25°C; f = 175 MHz
handbook, halfpage
6
T.C.
(mV/K)
4
2
0
−2
−4
−6
10 10
VDS= 10V; valid for Tj= 25 to 125°C.
2
3
10
ID (mA)
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
MGP168
12
handbook, halfpage
I
D
(A)
8
4
4
10
0
020
VDS=10V.
Tj = 25 °C
125 °C
10
VGS (V)
MGP169
Fig.5 Drain current as a function of gate-source
voltage, typical values.
September 1992 4
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