Philips BLF245B Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BLF245B

VHF push-pull power MOS
transistor

Product specification

September 1992

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF245B

FEATURES

• High power gain

• Easy power control

• Good thermal stability

• Gold metallization ensures

excellent reliability.

DESCRIPTION

Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor designed for large signal
amplifier applications in the VHF
frequency range.

The transistor is encapsulated in a
4-lead, SOT279 balanced flange
envelope, with a ceramic cap. The
mounting flange provides the
common source connection for the
transistors.

PINNING - SOT279

PIN DESCRIPTION

1 gate 1
2 drain 1
3 gate 2
4 drain 2
5 source

PIN CONFIGURATION

page

Top view

14

5

32

MSB018

d

2

g

2

g

1

MBB157

s

d

1

Fig.1 Simplified outline and symbol.

CAUTION

The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.

QUICK REFERENCE DATA

RF performance at T

MODE OF OPERATION

= 25 °C in a push-pull common source test circuit.

h

f

(MHz)

V

(V)

DS

P

(W)

L

G

P

(dB)

(%)

CW, class-B 175 28 30 > 14 > 55

September 1992 2

η

D

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF245B

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).
Per transistor section unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

±V

GS

I

D

P

tot

T

stg

T

j

THERMAL RESISTANCE

drain-source voltage − 65 V
gate-source voltage − 20 V
DC drain current − 4.5 A
total power dissipation up to Tmb = 25 °C; total device;

− 75 W

both sections equally loaded
storage temperature −65 150 °C
junction temperature − 200 °C

SYMBOL PARAMETER CONDITIONS

R

th j-mb

thermal resistance from

total device; both sections equally loaded 2.3 K/W

junction to mounting base

R

th mb-h

thermal resistance from

total device; both sections equally loaded 0.3 K/W

mounting base to heatsink

2

10

handbook, halfpage

I

D

(A)

10

1

−1

10

1

(1)

10

VDS (V)

MRA922

(2)

2

10

120

handbook, halfpage

P

tot

(W)

80

40

0

04080

THERMAL

RESISTANCE

MRA929

(2)

(1)

120

Th (

160

o

C)

(1) Current in this area may be limited by R
(2) Tmb = 25 °C.
Total device; both sections equally loaded.

DS(on)

.

Fig.2 DC SOAR.

September 1992 3

(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.

Fig.3 Power/temperature derating curves.

Philips Semiconductors Product specification

VHF push-pull power MOS transistor BLF245B

CHARACTERISTICS (per section)

T

= 25 °C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

g

fs

R

DS(on)

I

DSX

C

is

C

os

C

rs

drain-source breakdown voltage ID = 5 mA; VGS = 0 65 −−V
drain-source leakage current VGS = 0; VDS = 28 V −−1mA
gate-source leakage current ±VGS = 20 V; VDS = 0 −−1µA
gate-source threshold voltage ID = 5 mA; VDS = 10 V 2 − 4.5 V
forward transconductance ID = 0.75 A; VDS = 10 V 600 850 − mS
drain-source on-state resistance ID = 0.75 A; VGS = 10 V − 0.8 1.5 Ω
on-state drain current VGS = 10 V; VDS = 10 V − 5 − A
input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 60 − pF
output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 40 − pF
feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 4.5 − pF

handbook, halfpage

2

T.C.

(mV/K)

0

−2

−4

−6

−8

1

VDS= 10 V.

10 10

2

ID (mA)

Fig.4 Temperature coefficient of gate-source

voltage as a function of drain current, typical
values per section.

MGP180

12

MGP181

VGS (V)

handbook, halfpage

3

10

6

I

D

(A)

4

2

0

048 16

VDS= 10 V.

Tj = 25 °C

125 °C

Fig.5 Drain current as a function of gate-source

voltage, typical values per section.

September 1992 4