Philips blf245 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D065

BLF245

VHF power MOS transistor

Product specification
Supersedes data of 1997 Dec 17

2003 Sep 02

Philips Semiconductors Product specification

VHF power MOS transistor BLF245

FEATURES

• High power gain

• Low noise figure

• Easy power control

• Good thermal stability

• Withstands full load mismatch.

DESCRIPTION

Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the VHF frequency
range.

The transistor is encapsulated in a
4-lead SOT123A flange package,
with a ceramic cap. All leads are
isolated from the flange.

Matched gate-source voltage (VGS)
groups are available on request.

PINNING - SOT123A

PIN CONFIGURATION

fpage

1

23

4

MSB057

g

MBB072

d

s

Fig.1 Simplified outline and symbol.

CAUTION

This product is supplied in anti-static packing to prevent damage caused by
electrostaticdischargeduringtransportandhandling.Forfurtherinformation,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.

WARNING

PIN DESCRIPTION

1 drain
2 source
3 gate
4 source

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.

QUICK REFERENCE DATA

RF performance at Th = 25 °C in a class-B test circuit.

MODE OF OPERATION

f

(MHz)

V

(V)

DS

P

(W)

L

G

(dB)

p

(%)

CW, class-B 175 28 30 >13 >50

η

D

2003 Sep 02 2

Philips Semiconductors Product specification

VHF power MOS transistor BLF245

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GS

I

D

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

R

th mb-h

drain-source voltage VGS=0 − 65 V
gate-source voltage VDS=0 −±20 V
drain current (DC) − 6A
total power dissipation Tmb≤ 25 °C − 68 W
storage temperature −65 150 °C
junction temperature − 200 °C

thermal resistance from junction to mounting base Tmb=25°C; P
thermal resistance from mounting base to heatsink Tmb=25°C; P

= 68 W 2.6 K/W

tot

= 68 W 0.3 K/W

tot

10

handbook, halfpage

I

D

(A)

10

(1) Current is this area may be limited by R
(2) Tmb=25°C.

(1)

1

−1

110

Fig.2 DC SOAR.

(2)

VDS (V)

.

DSon

MRA921

120

MGP167

Th (°C)

100

handbook, halfpage

P

tot

(W)

80

60

40

20

2

10

0

0 40 80 160

(1) Continuous operation.
(2) Short-time operation during mismatch.

(2)

(1)

Fig.3 Power derating curves.

2003 Sep 02 3

Philips Semiconductors Product specification

VHF power MOS transistor BLF245

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

I

DSS

I

GSS

V

GSth

∆V

GS

g

fs

R

DSon

I

DSX

C

is

C

os

C

rs

F noise figure input and output power matched for:

drain-source breakdown voltage VGS= 0; ID=10mA 65 −− V
drain-source leakage current VGS= 0; VDS=28V −−2mA
gate-source leakage current VGS= ±20 V; VDS=0 −−1 µA
gate-source threshold voltage ID= 10 mA; VDS=10V 2 − 4.5 V
gate-source voltage difference of

ID= 0 mA; VDS=10V −−100 mV

matched devices
forward transconductance ID= 1.5 A; VDS= 10 V 1.2 1.9 − S
drain-source on-state resistance ID= 1.5 A; VGS=10V − 0.4 0.75 Ω
on-state drain current VGS = 10 V; VDS = 10 V − 10 − A
input capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 125 − pF
output capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 75 − pF
feedback capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 7 − pF

− 2 − dB

I

= 1 A; VDS= 28 V; PL=30W;

D

R1=1kΩ; Th=25°C; f = 175 MHz;
see Fig.14

VGS group indicator

GROUP

A 2.0 2.1 O 3.3 3.4
B 2.1 2.2 P 3.4 3.5
C 2.2 2.3 Q 3.5 3.6
D 2.3 2.4 R 3.6 3.7
E 2.4 2.5 S 3.7 3.8

F 2.5 2.6 T 3.8 3.9
G 2.6 2.7 U 3.9 4.0
H 2.7 2.8 V 4.0 4.1

J 2.8 2.9 W 4.1 4.2
K 2.9 3.0 X 4.2 4.3

L 3.0 3.1 Y 4.3 4.4
M 3.1 3.2 Z 4.4 4.5
N 3.2 3.3

LIMITS

(V)

GROUP

LIMITS

(V)

MIN. MAX. MIN. MAX.

2003 Sep 02 4

Philips Semiconductors Product specification

VHF power MOS transistor BLF245

handbook, halfpage

6

T.C.

(mV/K)

4

2

0

−2

−4

−6

10 10

VDS= 10 V; valid for Tj=25to125°C.

2

3

10

ID (mA)

Fig.4 Temperature coefficient of gate-source

voltageasafunctionofdraincurrent;typical
values.

MGP168

12

handbook, halfpage

I

D

(A)

8

4

4

10

0

020

VDS=10V.

Tj = 25 °C

125 °C

10

VGS (V)

MGP169

Fig.5 Drain current as a function of gate-source

voltage; typical values.

120

MGP170

Tj (°C)

0.8

handbook, halfpage

R

DSon

(Ω)

0.6

0.4

0.2

0

0

VGS= 10 V; ID= 1.5 A.

40 80 160

Fig.6 Drain-source on-state resistance as a

function of junction temperature; typical
values.

2003 Sep 02 5

30

MGP171

VDS (V)

240

handbook, halfpage

C

(pF)

200

160

120

80

40

01020 40

VGS= 0; f = 1 MHz.

C

is

C

os

Fig.7 Input and output capacitance as functions

of drain-source voltage; typical values.

Philips Semiconductors Product specification

VHF power MOS transistor BLF245

20

handbook, halfpage

C

rs

(pF)

10

0

01020

VGS= 0; f = 1 MHz.

VDS (V)

Fig.8 Feedback capacitance as a function of

drain-source voltage; typical values.

MRA920

30

APPLICATION INFORMATION FOR CLASS-B OPERATION

Th = 25 °C; R

= 0.3 K/W; R1 = 1 kΩ.

th mb-h

RF performance in CW operation in a common source class-B test circuit.

MODE OF OPERATION

f

(MHz)

CW, class-B 175 28 50 30 >13

V

(V)

DS

I

DQ

(mA)

P

(W)

L

G

p

(dB)

typ. 15.5

η

D

(%)

< 50

typ. 67

(Ω)

Z

i

(1)

Z

(Ω)

L

2.0 − j2.7 3.9 + j4.4

175 12.5 50 12 typ. 12 typ. 66 2.4 − j2.5 3.8 + j1.3

Note

1. R1 included.

Ruggedness in class-B operation

The BLF245 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the
following conditions: T

=25°C; R

h

= 0.3 K/W; at rated load power.

th mb-h

2003 Sep 02 6

Philips Semiconductors Product specification

VHF power MOS transistor BLF245

20

handbook, halfpage

G

p

(dB)

10

0

10 20 30 50

Class-B operation; VDS= 28 V; IDQ=50mA;
f = 175 MHz; T

=25°C; R

h

G

η

th mb-h

p

D

= 0.3 K/W.

MGP172

40

PL (W)

Fig.9 Power gain and efficiency as functions of

load power; typical values.

100

η

(%)

50

0

1.8

MEA736

PIN (W)

60

handbook, halfpage

P

L

D

(W)

50

40

30

20

10

0 0.6 2.4

Class-B operation; VDS= 28 V; IDQ=50mA;
f = 175 MHz; T

=25°C; R

h

th mb-h

1.2

= 0.3 K/W.

Fig.10 Load power as a function of input power;

typical values.

η

G

P

L (W)

MGP173

D

p

20

handbook, halfpage

G

p

(dB)

10

0

01020

Class-B operation; VDS= 12.5 V; IDQ=50mA;
f = 175 MHz; T

=25°C; R

h

th mb-h

= 0.3 K/W.

Fig.11 Power gain and efficiency as functions of

load power; typical values.

100

η

(%)

50

0

1.8

MEA737

PIN (W)

20

handbook, halfpage

D

P

L

(W)

10

0

0 0.6 2.4

Class-B operation; VDS= 12.5 V; IDQ= 50 mA;
f = 175 MHz; T

=25°C; R

h

th mb-h

1.2

= 0.3 K/W.

Fig.12 Load power as a function of input power;

typical values.

2003 Sep 02 7

Philips Semiconductors Product specification

VHF power MOS transistor BLF245

handbook, full pagewidth

f = 175 MHz.

50 Ω
input

C1

C2

Z

i

L1

R1

C3

R2

C4

+V

GG

D.U.T.

L2

L3

Fig.13 Test circuit for class-B operation.

C5

+V

DD

C7

L6

C8

L4

C6

R3

L5

MGP174

C9

50 Ω
output

C10

2003 Sep 02 8

Philips Semiconductors Product specification

VHF power MOS transistor BLF245

List of components class-B test circuit (see Fig.14)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1 film dielectric trimmer 4 to 40 pF 2222 809 07008
C2, C8 film dielectric trimmer 5 to 60 pF 2222 809 07011
C3 multilayer ceramic chip capacitor 100 pF 2222 854 13101
C4, C6 multilayer ceramic chip capacitor 100 nF 2222 852 47104
C5 ceramic capacitor 100 pF 2222 680 10101
C7 multilayer ceramic chip capacitor; note 1 18 pF
C9 multilayer ceramic chip capacitor; note 1 27 pF
C10 multilayer ceramic chip capacitor; note 1 24 pF
L1 3 turns enamelled 0.5 mm copper wire 13.5 nH length 3.5 mm

int. dia. 2 mm

leads 2 × 2mm
L2, L3 stripline; note 2 30 Ω 10 × 6mm
L4 6 turns enamelled 1.5 mm copper wire 98 nH length 12.5 mm

int. dia. 5 mm

leads 2 × 2mm
L5 grade 3B Ferroxcube RF choke 4312 020 36640
L6 2 turns enamelled 1.5 mm copper wire 24.5 nH length 4 mm

int. dia. 5 mm

leads 2 × 2mm
R1 metal film resistor 1 kΩ
R2 metal film resistor 1 MΩ
R3 metal film resistor 10 Ω

Notes

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

2. The striplines are mounted on a double copper-clad PCB with epoxy fibre-glass dielectric (εr= 4.5),
thickness1⁄16inch.

2003 Sep 02 9

Philips Semiconductors Product specification

VHF power MOS transistor BLF245

handbook, full pagewidth

C1 C2

+V

GG

C4

C3

R2

R1

L1

L2 L3

135

copper straps

rivets

copper strap

copper straps

C5

72

L5

C6

L4

L6

C7

R3

C8

+V

DD

C9
C10

MGP175

Dimensions in mm.
The circuit and components aresituatedon one side of the epoxy fibre-glass board; the other side isunetchedcopperand serves as an earth. Earth

connections aremade by meansoffixing screws, hollowrivets and copper strapsunder the sourcesandaround the edges,to provide a directcontact
between the copper on the component side and the ground plane.

Fig.14 Component layout for 175 MHz class-B test circuit.

2003 Sep 02 10

Philips Semiconductors Product specification

VHF power MOS transistor BLF245

40

handbook, halfpage

Z

i

(Ω)

30

20

−x

i

10

r

i

0

20 40 120

Class-B operation; VDS= 28 V; IDQ=50mA;

= 30 W; Th=25°C; R

P

L

60 80 100

= 0.3 K/W.

th mb-h

MGP177

f (MHz)

Fig.15 Input impedance as a function of frequency

(series components); typical values.

16

handbook, halfpage

Z

L

(Ω)

12

8

4

0

20 40 120

Class-B operation; VDS= 28 V; IDQ=50mA;

= 30 W; Th=25°C; R

P

L

R

L

X

L

60 80 100

= 0.3 K/W.

th mb-h

MGP178

f (MHz)

Fig.16 Load impedance as a function of frequency

(series components); typical values.

handbook, halfpage

Fig.17 Definition of MOS impedance.

40

handbook, halfpage

G

p

(dB)

30

20

10

Z

i

Z

MBA379

L

0

20 40 120

Class-B operation; VDS= 28 V; IDQ=50mA;

= 30 W; Th=25°C; R

P

L

60 80 100

= 0.3 K/W.

th mb-h

MGP179

f (MHz)

Fig.18 Power gain as a function of frequency;

typical values.

2003 Sep 02 11

Philips Semiconductors Product specification

VHF power MOS transistor BLF245

BLF245 scattering parameters

VDS= 12.5 V; ID= 50 mA; note 1

f (MHz)

s

11

s

21

s

12

s

22

|s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ

5 0.91 −48.3 25.72 147.1 0.03 57.9 0.92 −47.8
10 0.80 −81.4 19.43 125.8 0.05 36.8 0.81 −81.3
20 0.71 −116.7 11.79 102.4 0.06 15.0 0.71 −115.5
30 0.68 −132.3 8.04 89.7 0.06 3.3 0.69 −131.1
40 0.69 −140.3 5.97 80.8 0.06 −4.4 0.69 −139.0
50 0.71 −145.2 4.67 73.6 0.06 −10.2 0.71 −143.8
60 0.73 −148.6 3.76 67.5 0.05 −14.8 0.73 −147.2
70 0.75 −151.1 3.10 62.4 0.05 −18.4 0.75 −149.9
80 0.77 −153.1 2.61 57.9 0.05 −21.3 0.77 −152.1
90 0.79 −155.1 2.24 53.7 0.04 −23.8 0.79 −154.2

100 0.81 −157.3 1.94 49.8 0.04 −25.9 0.81 −156.1
125 0.84 −161.9 1.39 41.2 0.03 −28.0 0.85 −160.1
150 0.87 −165.0 1.04 35.4 0.02 −23.3 0.88 −163.4
175 0.91 −167.9 0.81 30.8 0.01 −8.4 0.91 −166.3
200 0.92 −171.0 0.65 26.6 0.01 22.4 0.92 −168.9
250 0.94 −175.5 0.44 21.6 0.02 72.1 0.95 −173.3
300 0.95 −179.8 0.32 19.2 0.03 83.0 0.96 −176.8
350 0.96 176.9 0.24 19.7 0.04 86.1 0.97 −179.8
400 0.96 173.5 0.19 22.1 0.05 86.1 0.97 177.5
450 0.97 170.6 0.16 26.1 0.06 86.2 0.97 174.9
500 0.97 167.8 0.14 31.6 0.08 84.7 0.98 172.6
600 0.96 162.4 0.13 43.5 0.10 82.6 0.98 168.4
700 0.96 157.2 0.13 52.9 0.12 80.0 0.97 164.4
800 0.94 152.4 0.14 58.9 0.13 77.9 0.97 160.6
900 0.95 147.8 0.16 63.1 0.15 74.4 0.95 157.1

1000 0.95 142.7 0.18 68.2 1.70 40.5 3.52 46.0

Note

1. For more extensive s-parameters see internet:
http://www.semiconductors.philips.com/markets/communications/wirelesscommunication/broadcast

2003 Sep 02 12

Philips Semiconductors Product specification

VHF power MOS transistor BLF245

BLF245 scattering parameters

VDS= 28 V; ID= 50 mA; note 1

f (MHz)

s

11

s

21

s

12

s

22

|s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ

5 0.95 −40.5 27.84 152.9 0.02 63.8 0.93 −35.8
10 0.86 −71.3 22.60 133.3 0.04 44.4 0.83 −64.1
20 0.77 −108.6 14.77 109.1 0.05 21.7 0.69 −97.8
30 0.73 −126.8 10.37 95.5 0.05 9.1 0.65 −115.5
40 0.73 −136.8 7.81 86.2 0.05 1.0 0.64 −125.2
50 0.74 −142.9 6.17 78.8 0.05 −5.0 0.65 −131.3
60 0.75 −147.1 5.01 72.7 0.05 −9.6 0.67 −135.7
70 0.76 −150.0 4.17 67.5 0.05 −13.3 0.69 −139.1
80 0.78 −152.3 3.54 63.0 0.04 −16.3 0.72 −142.0
90 0.80 −154.5 3.06 58.8 0.04 −18.8 0.74 −144.6

100 0.81 −156.8 2.66 54.7 0.04 −20.9 0.76 −146.9
125 0.84 −161.5 1.93 46.0 0.03 −23.2 0.81 −152.0
150 0.87 −164.5 1.46 39.8 0.02 −18.9 0.84 −156.1
175 0.90 −167.4 1.15 34.7 0.01 −5.0 0.87 −159.7
200 0.91 −170.5 0.93 30.1 0.01 23.3 0.89 −162.9
250 0.93 −175.0 0.63 23.9 0.02 72.9 0.93 −168.1
300 0.95 −179.3 0.46 20.1 0.03 84.5 0.94 −172.4
350 0.96 177.3 0.35 18.8 0.04 87.7 0.96 −175.9
400 0.96 173.9 0.27 19.1 0.05 87.6 0.96 −179.1
450 0.97 171.0 0.22 20.9 0.06 87.6 0.97 178.1
500 0.96 168.1 0.19 24.2 0.07 86.0 0.97 175.5
600 0.96 162.7 0.16 34.0 0.10 83.7 0.97 170.8
700 0.96 157.5 0.15 43.8 0.11 81.1 0.97 166.5
800 0.94 152.4 0.15 51.6 0.13 78.8 0.97 162.5
900 0.95 148.1 0.16 57.8 0.15 75.2 0.95 158.8

1000 0.95 142.9 0.18 64.3 1.92 53.7 4.01 59.9

Note

1. For more extensive s-parameters see internet:
http://www.semiconductors.philips.co/.markets/communications/wirelesscommunication/broadcast

2003 Sep 02 13

Philips Semiconductors Product specification

VHF power MOS transistor BLF245

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 4 leads SOT123A

D

A

F

D

1

H

43

α

q

U

1

C

B

w

C

M M

2

b

A

c

U

p

2

1

w

2

H

0 5 10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

5.82

5.56

c

Db

9.73

0.18

9.47

0.10

0.385

0.383

0.007

0.004

IEC JEDEC EIAJ

0.373

0.371

D

9.78

9.42

F

1

20.71

2.72

2.31

0.107

0.091

3.33

19.93

3.04

0.815

0.131

0.785

0.120

REFERENCES

Q

pH

4.63

4.11

0.182

0.162

q

18.42

0.725

UNIT

mm

inches

A

7.47

6.37

0.294

0.251

OUTLINE
VERSION

SOT123A

0.229

0.219

MM

1

24.87

24.64

0.980

0.970

M

A

B

U2U

1

6.48

9.78

6.22

9.39

0.255

0.385

0.245

0.370

U

3

Q

w

w

1

3

0.510.25

0.0200.010

EUROPEAN

PROJECTION

αU

2

45°

ISSUE DATE

99-03-29

2003 Sep 02 14

Philips Semiconductors Product specification

VHF power MOS transistor BLF245

DATA SHEET STATUS

LEVEL

DATA SHEET

STATUS

(1)

PRODUCT

STATUS

(2)(3)

DEFINITION

I Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

III Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

DEFINITIONS

DISCLAIMERS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.

Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to resultin personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2003 Sep 02 15

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [email protected].

© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 613524/04/pp16 Date of release: 2003 Sep 02 Document order number: 9397 750 11585

SCA75