Philips BLF244 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLF244
VHF power MOS transistor
Product specification
September 1992
Philips Semiconductors Product specification
VHF power MOS transistor BLF244
FEATURES
• High power gain
• Low noise figure
• Easy power control
• Good thermal stability
• Withstands full load mismatch
• Gold metallization ensures
excellent reliability.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the VHF frequency
range.
The transistor is encapsulated in a
4-lead SOT123 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
Matched gate-source voltage (V
GS
)
groups are available on request.
PINNING - SOT123
PIN CONFIGURATION
, halfpage
1
23
4
MSB057
g
MBB072
d
s
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
PIN DESCRIPTION
1 drain
2 source
3 gate
4 source
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
= 25 °C in a common source test circuit.
h
f
(MHz)
V
(V)
DS
P
(W)
L
G
p
(dB)
η
(%)
CW, class-B 175 28 15 > 13 > 50
D
September 1992 2
Philips Semiconductors Product specification
VHF power MOS transistor BLF244
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
±V
GS
I
D
P
tot
T
stg
T
j
THERMAL RESISTANCE
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
R
th j-mb
R
th mb-h
drain-source voltage − 65 V
gate-source voltage − 20 V
DC drain current − 3A
total power dissipation up to Tmb = 25 °C − 38 W
storage temperature −65 150 °C
junction temperature − 200 °C
thermal resistance from
Tmb=25°C; P
= 38 W 4.6 K/W
tot
junction to mounting base
thermal resistance from
Tmb=25°C; P
= 38 W 0.3 K/W
tot
mounting base to heatsink
10
handbook, halfpage
I
D
(A)
(1)
1
−1
10
110
(1) Current is this area may be limited by R
(2) Tmb=25°C.
Fig.2 DC SOAR.
(2)
VDS (V)
.
DS(on)
MRA919
50
handbook, halfpage
P
tot
(W)
40
30
20
10
2
10
0
0 50 100 150
(1) Short-time operation during mismatch.
(2) Continuous operation.
(1)
(2)
MGP151
Th (°C)
Fig.3 Power/temperature derating curves.
September 1992 3
Philips Semiconductors Product specification
VHF power MOS transistor BLF244
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
∆V
GS
g
fs
R
DS(on)
I
DSX
C
is
C
os
C
rs
F noise figure (see Fig. 13) I
drain-source breakdown voltage VGS = 0; ID=5mA 65 −− V
drain-source leakage current VGS = 0; VDS = 28 V −−1mA
gate-source leakage current ±VGS = 20 V; VDS = 0 −−1 µA
gate-source threshold voltage ID = 5 mA; VDS = 10 V 2 − 4.5 V
gate-source voltage difference of
ID = 5 mA; VDS = 10 V −−100 mV
matched devices
forward transconductance ID = 0.75 A; VDS = 10 V 0.6 −− S
drain-source on-state resistance ID = 0.75 A; VGS = 10 V − 0.8 1.5 Ω
on-state drain current VGS = 10 V; VDS = 10 V − 5 − A
input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 60 − pF
output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 40 − pF
feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 4.5 − pF
= 0.5 A; VDS = 28 V; R1 = 23 Ω;
D
− 4.3 − dB
Th = 25 °C; f = 175 MHz;
R
th mb-h
= 0.3 K/W
handbook, halfpage
2
T.C.
(mV/K)
0
−2
−4
−6
−8
1
VDS= 10V; valid for Tj= 25 to 125 °C.
10 10
2
ID (mA)
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
MGP152
handbook, halfpage
3
10
6
I
D
(A)
4
2
0
048 16
VDS=10V.
solid line: Tj=25°C.
dotted line: Tj= 125 °C.
MGP153
12
V
(V)
GS
Fig.5 Drain current as a function of gate-source
voltage, typical values.
September 1992 4
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