Philips blf244 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D065

BLF244

VHF power MOS transistor

Product specification
Supersedes data of 1997 Dec 17

2003 Oct 13

Philips Semiconductors Product specification

VHF power MOS transistor BLF244

FEATURES

• High power gain

• Low noise figure

• Easy power control

• Good thermal stability

• Withstands full load mismatch

• Gold metallization ensures

excellent reliability.

DESCRIPTION

Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the VHF frequency
range.

The transistor is encapsulated in a
4-lead SOT123A flange package,
with a ceramic cap. All leads are
isolated from the flange.

Matched gate-source voltage (VGS)
groups are available on request.

PINNING - SOT123A

PIN DESCRIPTION

1 drain
2 source
3 gate
4 source

PIN CONFIGURATION

handbook, halfpage

1

23

4

MSB057

g

MBB072

d

s

Fig.1 Simplified outline and symbol.

CAUTION

This product is supplied in anti-static packing to prevent damage caused by
electrostaticdischargeduringtransportandhandling.Forfurtherinformation,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.

QUICK REFERENCE DATA

RF performance at Th = 25 °C in a common source test circuit.

MODE OF OPERATION

f

(MHz)

V

(V)

DS

P

(W)

L

G

(dB)

p

(%)

CW, class-B 175 28 15 >13 >50

2003 Oct 13 2

η

D

Philips Semiconductors Product specification

VHF power MOS transistor BLF244

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GS

I

D

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

R

th mb-h

drain-source voltage − 65 V
gate-source voltage −±20 V
drain current (DC) − 3A
total power dissipation Tmb≤ 25 °C − 38 W
storage temperature −65 150 °C
junction temperature − 200 °C

thermal resistance from junction to

Tmb=25°C; P

= 38 W 4.6 K/W

tot

mounting base
thermal resistance from mounting base to

Tmb=25°C; P

= 38 W 0.3 K/W

tot

heatsink

10

handbook, halfpage

I

D

(A)

(1)

1

−1

10

110

(1) Current is this area may be limited by R
(2) Tmb=25°C.

Fig.2 DC SOAR.

(2)

VDS (V)

.

DSon

MRA919

50

handbook, halfpage

P

tot

(W)

40

30

20

10

2

10

0

0 50 100 150

(1) Short-time operation during mismatch.
(2) Continuous operation.

(1)

(2)

MGP151

Th (°C)

Fig.3 Power derating curves.

2003 Oct 13 3

Philips Semiconductors Product specification

VHF power MOS transistor BLF244

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

I

DSS

I

GSS

V

GSth

∆V

GS

g

fs

R

DSon

I

DSX

C

is

C

os

C

rs

F noise figure; see Fig.13 I

drain-source breakdown voltage VGS= 0; ID= 5 mA 65 −− V
drain-source leakage current VGS= 0; VDS=28V −−1mA
gate-source leakage current VGS= ±20 V; VDS=0 −−1 µA
gate-source threshold voltage ID= 5 mA; VDS=10V 2 − 4.5 V
gate-source voltage difference of

ID= 5 mA; VDS=10V −−100 mV

matched devices
forward transconductance ID= 0.75 A; VDS=10V 0.6 −−S
drain-source on-state resistance ID= 0.75 A; VGS=10V − 0.8 1.5 Ω
on-state drain current VGS=10V;VDS=10V − 5 − A
input capacitance VGS= 0; VDS=28V;f=1MHz − 60 − pF
output capacitance VGS= 0; VDS=28V;f=1MHz − 40 − pF
feedback capacitance VGS= 0; VDS=28V;f=1MHz − 4.5 − pF

= 0.5 A; VDS= 28 V; R1 = 23 Ω;

D

− 4.3 − dB
Th=25°C; f = 175 MHz;
R

th mb-h

= 0.3 K/W

VGS group indicator

GROUP

A 2.0 2.1 O 3.3 3.4
B 2.1 2.2 P 3.4 3.5
C 2.2 2.3 Q 3.5 3.6
D 2.3 2.4 R 3.6 3.7
E 2.4 2.5 S 3.7 3.8
F 2.5 2.6 T 3.8 3.9
G 2.6 2.7 U 3.9 4.0
H 2.7 2.8 V 4.0 4.1

J 2.8 2.9 W 4.1 4.2
K 2.9 3.0 X 4.2 4.3
L 3.0 3.1 Y 4.3 4.4

M 3.1 3.2 Z 4.4 4.5
N 3.2 3.3

LIMITS

(V)

GROUP

LIMITS

(V)

MIN. MAX. MIN. MAX.

2003 Oct 13 4

Philips Semiconductors Product specification

VHF power MOS transistor BLF244

handbook, halfpage

2

T.C.

(mV/K)

0

−2

−4

−6

−8

1

VDS= 10 V; valid for Tj=25to125°C.

10 10

2

ID (mA)

Fig.4 Temperature coefficient of gate-source

voltageasafunctionofdraincurrent,typical
values.

MGP152

handbook, halfpage

3

10

6

I

D

(A)

4

2

0

048 16

VDS=10V.
solid line: Tj=25°C.
dotted line: Tj= 125 °C.

MGP153

12

V

(V)

GS

Fig.5 Drain current as a function of gate-source

voltage, typical values.

handbook, halfpage

2

R

DS(on)

(Ω)

1

0

0

VGS= 10 V; ID= 0.75 A.

40 80 160120

Tj (°C)

Fig.6 Drain-source on-state resistance as a

function of junction temperature, typical
values.

MGP154

30

MGP155

VDS (V)

160

handbook, halfpage

C

(pF)

120

80

40

0

0

VGS= 0; f = 1 MHz.

C

is

C

os

10 20 40

Fig.7 Input and output capacitance as functions

of drain-source voltage, typical values.

2003 Oct 13 5

Philips Semiconductors Product specification

VHF power MOS transistor BLF244

20

handbook, halfpage

C

rs

(pF)

10

0

0

VGS= 0; f = 1 MHz.

20 40

V

(V)

DS

Fig.8 Feedback capacitance as a function of

drain-source voltage; typical values.

MGP156

APPLICATION INFORMATION FOR CLASS-B OPERATION

Th=25°C; R

= 3 K/W; unless otherwise specified.

th mb-h

RF performance in CW operation in a common source class-B circuit.

f

MODE OF OPERATION

(MHz)

V

CW, class-B 175 28 25 15 >13

(V)

DS

I

DQ

(mA)

P

(W)

L

G

P

(dB)

typ. 17

η

D

(%)

>50

typ. 65

(Ω)

Z

i

(1)

Z

(Ω)

L

R1

(Ω)

3.0 − j4.0 6.3 + j9.8 46.4//46.4

175 12.5 25 6 typ. 15 typ. 60 3.0 − j4.0 4.5 + j3.3 100

Note

1. R1 included.

Ruggedness in class-B operation

The BLF244 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the
following conditions: T

=25°C; R

h

= 0.3 K/W; at rated load power.

th mb-h

2003 Oct 13 6

Philips Semiconductors Product specification

VHF power MOS transistor BLF244

IN

MGP157

(W)

30

handbook, halfpage

P

L

(W)

20

10

02

Class-B operation; VDS= 28 V; IDQ=25mA;
f = 175 MHz; T

=25°C; R

h

th mb-h

1

= 0.3 K/W.

P

Fig.9 Load power as a function of input power;

typical values.

20

handbook, halfpage

G

p

(dB)

10

0

0

Class-B operation; VDS= 28 V; IDQ=25mA;
f = 175 MHz; T

=25°C; R

h

G

p

η

D

10 20 30

= 0.3 K/W.

th mb-h

MGP158

PL (W)

Fig.10 Power gain and efficiency as functions of

load power; typical values.

100

(%)

50

0

η

D

IN

MGP159

(W)

20

handbook, halfpage

P

L

(W)

10

0

012

Class-B operation; VDS= 12.5 V; IDQ=25mA;
f = 175 MHz; T

=25°C; R

h

th mb-h

= 0.3 K/W.

P

Fig.11 Load power as a function of input power;

typical values.

20

handbook, halfpage

G

p

(dB)

16

12

8

4

0

Class-B operation; VDS= 12.5 V; IDQ= 25 mA;
f = 175 MHz; T

G

p

η

D

48 1612

=25°C; R

h

th mb-h

= 0.3 K/W.

MGP160

PL (W)

Fig.12 Power gain and efficiency as functions of

load power; typical values.

100

(%)

80

60

40

20

η

D

2003 Oct 13 7

Philips Semiconductors Product specification

VHF power MOS transistor BLF244

handbook, full pagewidth

50 Ω
input

f = 175 MHz.

C1

C2

C3

+V

G

R2

C6

L1

C5

C4

R1

L2

D.U.T.

L3

R3

L4

C14

C7

L6

L5

C8

C9

+V

D

C13

C11

C10

C12

50 Ω

output

MGP161

L8L7

Fig.13 Test circuit for class-B operation.

2003 Oct 13 8

Philips Semiconductors Product specification

VHF power MOS transistor BLF244

List of components (see Fig.13)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C12 multilayer ceramic chip capacitor; note 1 680 nF
C2 multilayer ceramic chip capacitor; note 1 20 pF
C3, C4, C9 film dielectric trimmer 5 to 60 pF 2222 809 08003
C5 multilayer ceramic chip capacitor; note 1 75 pF
C6 multilayer ceramic chip capacitor 10 nF 2222 852 47103
C7 multilayer ceramic chip capacitor; note 1 100 pF
C8 multilayer ceramic chip capacitor; note 1 47 pF
C10, C11 multilayer ceramic chip capacitor; note 1 11 pF
C13 solid tantalum capacitor 2.2 µF
C14 multilayer ceramic chip capacitor 100 nF 2222 852 47104
L1 4 turns enamelled 1 mm copper wire 32 nH length 6.3 mm

int. dia. 3 mm
leads 2 × 5mm

L2 1 turn enamelled 1 mm copper wire 12.2 nH int. dia. 5.6 mm

leads 2 × 5mm
L3, L4 stripline; note 2 30 Ω 15 × 6mm
L5 6 turns enamelled 1 mm copper wire 119 nH length 10.4 mm

int. dia. 6 mm

leads 2 × 5mm
L6 grade 3B Ferroxcube RF choke 4312 020 36640
L7 2 turns enamelled 1 mm copper wire 19 nH length 2.4 mm

int. dia. 3 mm

leads 2 × 5mm
L8 4 turns enamelled 1 mm copper wire 28.5 nH length 8.5 mm

int. dia. 3 mm

leads 2 × 5mm
R1 metal film resistor; note 3
R2 0.4 W metal film resistor 1 MΩ
R3 0.4 W metal film resistor 10 Ω

Notes

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

2. The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass dielectric (εr= 4.5),
thickness1⁄16inch.

3. Refer to Application Information for value.

2003 Oct 13 9

Philips Semiconductors Product specification

VHF power MOS transistor BLF244

150

handbook, full pagewidth

strap

C2

C1

C3 C4

L1

rivet

C5

+V

R2

G

R1

L2

L3 L4

C6

strap

C7 C14

L5

L6

R3

C8

L7

C9

C13

+V

70

D

C11

L8

C12

C10

Dimensions in mm.
The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being

unetched copper to serve as ground plane. Earth connections are made by fixing screws, copper straps
and hollow rivets under the sources and around the edges to provide a direct contact between the copper
on the component side and the ground plane.

Fig.14 Component layout for 175 MHz class-B test circuit.

2003 Oct 13 10

MGP162

Philips Semiconductors Product specification

VHF power MOS transistor BLF244

60

handbook, halfpage

Z

i

(Ω)

40

x

i

20

r

i

0

20 120

Class-B operation; VDS=28V;IDQ=25mA;

= 15 W; Th=25°C; R

P

L

40 60 80 100

= 0.3 K/W.

th mb-h

MGP164

f (MHz)

Fig.15 Input impedance as a function of frequency

(series components); typical values.

25

handbook, halfpage

Z

L

(Ω)

20

15

10

5

0

20 120

Class-B operation; VDS=28V;IDQ=25mA;

= 15 W; Th=25°C; R

P

L

R

L

X

L

40 60 80 100

= 0.3 K/W.

th mb-h

MGP165

f (MHz)

Fig.16 Load impedance as a function of frequency

(series components); typical values.

40

handbook, halfpage

G

p

(dB)

36

32

28

24

20

20 120

Class-B operation; VDS=28V;IDQ=25mA;

= 15 W; Th=25°C; R

P

L

40 60 80 100

= 0.3 K/W.

th mb-h

MGP166

f (MHz)

Fig.17 Power gainas function of frequency; typical

values.

2003 Oct 13 11

Philips Semiconductors Product specification

VHF power MOS transistor BLF244

BLF244 scattering parameters

VDS= 12.5 V; ID= 25 mA; note 1

f (MHz)

s

11

s

21

s

12

s

22

|s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ

5 0.98 −18.6 15.11 165.1 0.02 75.8 0.98 −18.9
10 0.93 −35.0 14.06 152.3 0.04 63.1 0.95 −36.5
20 0.84 −63.4 11.55 130.0 0.06 42.1 0.86 −65.1
30 0.77 −83.3 9.20 114.5 0.07 27.3 0.80 −85.7
40 0.73 −97.6 7.41 102.8 0.07 16.5 0.76 −99.8
50 0.72 −107.9 6.09 93.7 0.07 8.5 0.74 −109.8
60 0.71 −115.7 5.09 86.2 0.07 2.0 0.74 −117.3
70 0.72 −121.4 4.32 80.1 0.07 −3.1 0.74 −123.1
80 0.72 −126.0 3.72 74.8 0.07 −7.2 0.75 −127.8
90 0.74 −130.0 3.26 70.1 0.006 −10.9 0.76 −131.9

100 0.75 −133.8 2.88 65.6 0.06 −14.3 0.78 −135.4
125 0.78 −142.0 2.16 55.5 0.05 −20.6 0.81 −142.4
150 0.81 −147.9 1.66 48.1 0.04 −22.9 0.84 −147.8
175 0.85 −152.7 1.33 42.2 0.03 −21.0 0.86 −152.4
200 0.87 −157.6 1.09 36.7 0.02 −12.8 0.88 −156.4
250 0.90 −165.1 0.75 28.8 0.01 46.1 0.92 −162.9
300 0.92 −171.5 0.56 23.8 0.03 80.9 0.94 −168.1
350 0.94 −176.8 0.42 21.4 0.04 88.3 0.95 −172.4
400 0.94 178.3 0.34 20.8 0.06 89.0 0.96 −176.2
450 0.95 174.0 0.28 21.9 0.07 88.8 0.96 −179.6
500 0.95 169.9 0.24 24.8 0.09 86.9 0.96 177.3
600 0.95 162.4 0.19 33.8 0.12 83.5 0.97 171.8
700 0.94 155.4 0.18 42.8 0.14 79.9 0.96 166.8
800 0.94 148.6 0.19 50.1 0.17 77.1 0.96 162.1
900 0.93 142.0 0.21 54.4 0.19 71.6 0.94 157.9

1000 0.92 135.5 0.23 59.6 0.22 73.5 0.93 162.9

Note

1. For more extensive s-parameters see internet:
http://www.semiconductors.philips.com/markets/communications/wirelesscommunication/broadcast.

2003 Oct 13 12

Philips Semiconductors Product specification

VHF power MOS transistor BLF244

BLF244 scattering parameters

VDS= 28 V; ID= 25 mA; note 1

f (MHz)

s

11

s

21

s

12

s

22

|s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ

5 0.99 −15.9 15.62 167.8 0.01 78.5 0.98 −13.8
10 0.96 −30.1 14.85 157.2 0.03 68.0 0.96 −27.1
20 0.89 −56.5 12.92 137.3 0.04 49.3 0.88 −50.1
30 0.83 −76.5 10.79 122.3 0.06 35.1 0.81 −68.2
40 0.79 −91.7 8.98 110.5 0.06 24.1 0.76 −81.7
50 0.77 −103.1 7.55 101.1 0.06 15.8 0.73 −91.9
60 0.76 −111.8 6.40 93.4 0.06 9.1 0.72 −99.9
70 0.75 −118.3 5.50 87.1 0.06 3.8 0.72 −106.4
80 0.76 −123.5 4.79 81.7 0.06 −0.5 0.72 −111.8
90 0.76 −127.9 4.24 76.8 0.06 −4.3 0.73 −116.6

100 0.77 −132.0 3.77 72.2 0.06 −7.7 0.74 −120.8
125 0.79 −140.7 2.88 61.9 0.05 −14.3 0.77 −129.3
150 0.82 −146.7 2.24 54.2 0.04 −16.8 0.80 −135.8
175 0.85 −151.6 1.82 47.9 0.03 −15.2 0.83 −141.4
200 0.87 −156.5 1.50 42.0 0.02 −7.5 0.85 −146.3
250 0.89 −164.0 1.04 33.2 0.01 48.5 0.89 −154.2
300 0.92 −170.5 0.78 27.0 0.03 83.8 0.92 −160.5
350 0.93 −175.8 0.59 23.1 0.04 91.3 0.93 −165.7
400 0.94 179.1 0.47 20.9 0.06 91.9 0.95 −170.1
450 0.95 174.8 0.38 20.0 0.07 91.5 0.95 −174.1
500 0.94 170.7 0.32 20.8 0.09 89.4 0.96 −177.6
600 0.94 163.1 0.25 26.1 0.12 85.7 0.96 176.1
700 0.94 156.0 0.22 33.7 0.14 81.9 0.96 170.6
800 0.93 149.2 0.21 41.9 0.17 78.9 0.96 165.5
900 0.93 142.5 0.22 47.9 0.19 73.1 0.94 160.9

1000 0.92 136.1 0.23 57.3 0.17 75.3 0.93 165.9

Note

1. For more extensive s-parameters see internet:
http://www.semiconductors.philips.com/markets/communications/wirelesscommunication/broadcast.

2003 Oct 13 13

Philips Semiconductors Product specification

VHF power MOS transistor BLF244

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 4 leads SOT123A

D

A

F

D

1

H

43

α

q

U

1

C

B

w

C

M M

2

b

A

c

U

p

2

1

w

2

H

0 5 10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

5.82

5.56

c

Db

9.73

0.18

9.47

0.10

0.385

0.383

0.007

0.004

IEC JEDEC EIAJ

0.373

0.371

D

9.78

9.42

F

1

20.71

2.72

19.93

2.31

0.815

0.107

0.091

0.131

0.785

0.120

REFERENCES

pH

3.33

3.04

Q

4.63

4.11

0.182

0.162

q

18.42

0.725

UNIT

mm

inches

A

7.47

6.37

0.294

0.251

OUTLINE

VERSION

SOT123A

0.229

0.219

MM

1

24.87

24.64

0.980

0.970

M

A

B

U2U

1

6.48

6.22

0.255

0.385

0.245

0.370

U

3

w

1

3

9.78

9.39

EUROPEAN

PROJECTION

Q

w

αU

2

0.510.25
45°

0.0200.010

ISSUE DATE

99-03-29

2003 Oct 13 14

Philips Semiconductors Product specification

VHF power MOS transistor BLF244

DATA SHEET STATUS

LEVEL

DATA SHEET

STATUS

(1)

PRODUCT

STATUS

(2)(3)

DEFINITION

I Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

III Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

DEFINITIONS

DISCLAIMERS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswill be
suitable for the specified use without further testing or
modification.

Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to resultin personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2003 Oct 13 15

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [email protected].

© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 613524/03/pp16 Date of release: 2003 Oct 13 Document order number: 9397 750 11584

SCA75