Philips BLF242 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLF242
HF/VHF power MOS transistor
Product specification
September 1992
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF242
FEATURES
• High power gain
• Low noise
• Easy power control
• Good thermal stability
• Withstands full load mismatch
• Gold metallization ensures
excellent reliability.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for professional transmitter
applications in the HF/VHF frequency
range.
The transistor is encapsulated in a
4-lead, SOT123 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
PINNING - SOT123
PIN CONFIGURATION
alfpage
1
23
4
MSB057
g
MBB072
d
s
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
PIN DESCRIPTION
1 drain
2 source
3 gate
4 source
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
= 25 °C in a common source test circuit.
h
f
(MHz)
V
(V)
DS
P
(W)
L
G
(dB)
CW, class-B 175 28 5 > 13
typ. 16
p
η
D
(%)
> 50
typ. 60
September 1992 2
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF242
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
±V
GS
I
D
P
tot
T
stg
T
j
THERMAL RESISTANCE
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
R
th j-mb
R
th mb-h
drain-source voltage − 65 V
gate-source voltage − 20 V
DC drain current − 1A
total power dissipation up to Tmb = 25 °C − 16 W
storage temperature −65 150 °C
junction temperature − 200 °C
thermal resistance from
Tmb=25°C; P
= 16 W 11 K/W
tot
junction to mounting base
thermal resistance from
Tmb=25°C; P
= 16 W 0.3 K/W
tot
mounting base to heatsink
10
handbook, halfpage
I
D
(A)
1
(1)
−1
10
−2
10
1
(1) Current is this area may be limited by R
(2) Tmb=25°C.
10
Fig.2 DC SOAR.
VDS (V)
DS(on)
MRA918
(2)
2
10
.
20
handbook, halfpage
P
tot
(W)
10
0
0 50 100 150
(1) Continuous operation.
(2) Short-time operation during mismatch.
(2)
(1)
MPG141
Th (°C)
Fig.3 Power/temperature derating curves.
September 1992 3
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF242
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
g
fs
R
DS(on)
I
DSX
C
is
C
os
C
rs
drain-source breakdown voltage VGS = 0; ID= 0.1 mA 65 −− V
drain-source leakage current VGS = 0; VDS = 28 V −−10 µA
gate-source leakage current ±VGS = 20 V; VDS = 0 −−1 µA
gate-source threshold voltage ID = 3 mA; VDS = 10 V 2 − 4.5 V
forward transconductance ID = 0.3 A; VDS = 10 V 0.16 0.24 − S
drain-source on-state resistance ID = 0.3 A; VGS = 1 V − 3.3 5 Ω
on-state drain current VGS = 10 V; VGS = 10 V − 1.2 − A
input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 13 − pF
output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 9.4 − pF
feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 1.7 − pF
handbook, halfpage
4
T.C.
(mV/K)
2
0
–2
–4
0 100 200 300
VDS=10V.
ID (mA)
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
MBB777
1.5
handbook, halfpage
I
D
(A)
1
0.5
0
0
VDS= 10V; Tj=25°C.
51015
MGP142
VGS (V)
Fig.5 Drain current as a function of gate-source
voltage, typical values.
September 1992 4
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