Philips blf242 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D065

BLF242

HF-VHF power MOS transistor

Product specification
Supersedes data of 1997 Dec 17

2003 Oct 13

Philips Semiconductors Product specification

HF-VHF power MOS transistor BLF242

FEATURES

• High power gain

• Low noise

• Easy power control

• Good thermal stability

• Withstands full load mismatch

• Gold metallization ensures

excellent reliability.

DESCRIPTION

Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for professional transmitter
applicationsintheHF/VHF frequency
range.

The transistor is encapsulated in a
4-lead, SOT123A flange package,
with a ceramic cap. All leads are
isolated from the flange.

PINNING - SOT123A

PIN DESCRIPTION

1 drain
2 source
3 gate
4 source

PIN CONFIGURATION

handbook, halfpage

1

23

4

MSB057

g

MBB072

d

s

Fig.1 Simplified outline and symbol.

CAUTION

This product is supplied in anti-static packing to prevent damage caused by
electrostaticdischarge duringtransport andhandling.For furtherinformation,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided
that theBeO disc isnot damaged. All personswho handle, useor dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use,dispose of as chemical orspecial waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.

QUICK REFERENCE DATA

RF performance at Th = 25 °C in a common source test circuit.

MODE OF OPERATION

f

(MHz)

V

(V)

DS

P

(W)

L

(dB)

CW, class-B 175 28 5 >13

typ. 16

2003 Oct 13 2

G

p

η

D

(%)

>50

typ. 60

Philips Semiconductors Product specification

HF-VHF power MOS transistor BLF242

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GS

I

D

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

R

th mb-h

drain-source voltage − 65 V
gate-source voltage −±20 V
drain current (DC) − 1A
total power dissipation Tmb≤ 25 °C − 16 W
storage temperature −65 150 °C
junction temperature − 200 °C

thermal resistance from junction to

Tmb=25°C; P

= 16 W 11 K/W

tot

mounting base
thermal resistance from mounting base to

Tmb=25°C; P

= 16 W 0.3 K/W

tot

heatsink

10

handbook, halfpage

I

D

(A)

1

(1)

−1

10

−2

10

1

(1) Current is this area may be limited by R
(2) Tmb=25°C.

10

Fig.2 DC SOAR.

VDS (V)

.

DSon

(2)

MRA918

20

handbook, halfpage

P

tot

(W)

10

2

10

0

0 50 100 150

(1) Continuous operation.
(2) Short-time operation during mismatch.

(2)

(1)

MPG141

Th (°C)

Fig.3 Power derating curves.

2003 Oct 13 3

Philips Semiconductors Product specification

HF-VHF power MOS transistor BLF242

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

I

DSS

I

GSS

V

GSth

g

fs

R

DSon

I

DSX

C

is

C

os

C

rs

drain-source breakdown voltage VGS = 0; ID= 0.1 mA 65 −− V
drain-source leakage current VGS = 0; VDS = 28 V −−10 µA
gate-source leakage current VGS = ±20 V; VDS = 0 −−1 µA
gate-source threshold voltage ID = 3 mA; VDS = 10 V 2 − 4.5 V
forward transconductance ID = 0.3 A; VDS = 10 V 0.16 0.24 − S
drain-source on-state resistance ID = 0.3 A; VGS = 1 V − 3.3 5 Ω
on-state drain current VGS = 10 V; VGS = 10 V − 1.2 − A
input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 13 − pF
output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 9.4 − pF
feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 1.7 − pF

VGS group indicator

GROUP

A 2.0 2.1 O 3.3 3.4
B 2.1 2.2 P 3.4 3.5
C 2.2 2.3 Q 3.5 3.6
D 2.3 2.4 R 3.6 3.7
E 2.4 2.5 S 3.7 3.8
F 2.5 2.6 T 3.8 3.9
G 2.6 2.7 U 3.9 4.0
H 2.7 2.8 V 4.0 4.1

J 2.8 2.9 W 4.1 4.2
K 2.9 3.0 X 4.2 4.3
L 3.0 3.1 Y 4.3 4.4

M 3.1 3.2 Z 4.4 4.5
N 3.2 3.3

LIMITS

(V)

GROUP

LIMITS

(V)

MIN. MAX. MIN. MAX.

2003 Oct 13 4

Philips Semiconductors Product specification

HF-VHF power MOS transistor BLF242

handbook, halfpage

4

T.C.

(mV/K)

2

0

–2

–4

0 100 200 300

VDS=10V.

ID (mA)

Fig.4 Temperature coefficient of gate-source

voltageas afunctionof draincurrent,typical
values.

MBB777

1.5

handbook, halfpage

I

D

(A)

1

0.5

0

0

VDS= 10 V; Tj=25°C.

51015

MGP142

VGS (V)

Fig.5 Drain current as a function of gate-source

voltage, typical values.

handbook, halfpage

6

R

DS (on)

(Ω)

4

2

0

0

ID= 0.3 A; VGS=10V.

50 100 150

Tj (oC)

Fig.6 Drain-source on-state resistance as a

function of junction temperature, typical
values.

MBB778

30

handbook, halfpage

C

(pF)

20

10

0

0

VGS= 0; f = 1 MHz.

C

is

C

os

10 20 30

MBB776

VDS (V)

Fig.7 Input andoutput capacitanceas functions

of drain-source voltage, typical values.

2003 Oct 13 5

Philips Semiconductors Product specification

HF-VHF power MOS transistor BLF242

handbook, halfpage

6

C

rs

(pF)

4

2

0

0

VGS= 0; f = 1 MHz.

10 20 30

VDS (V)

Fig.8 Feedback capacitance as a function of

drain-source voltage, typical values.

MBB775

APPLICATION INFORMATION FOR CLASS-B OPERATION

Th=25°C; R

= 0.3 K/W; unless otherwise specified.

th mb-h

RF performance in CW operation in a common source class-B test circuit.

MODE OF OPERATION

f

(MHz)

V

(V)

DS

I

DQ

(mA)

CW, class-B 175 28 10 5 >13

P

(W)

L

G

P

(dB)

typ. 16

η

D

(%)

>50

typ. 60

R

(Ω)

GS

47

Ruggedness in class-B operation

The BLF242 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the
following conditions: V

= 28 V; f =175 MHz at rated output power.

DS

Noise figure (see Fig.11)
VDS= 28 V; ID= 0.2 A; f = 175 MHz; RGS=47Ω; Th=25°C. Input and output power matched for PL=5W;

F = typ. 5.5 dB.

2003 Oct 13 6

Philips Semiconductors Product specification

HF-VHF power MOS transistor BLF242

20

handbook, halfpage

G

p

(dB)

10

0

0510

Class-B operation; VDS= 28 V; IDQ=10mA;

=47Ω; f = 175 MHz.

R

GS

G

p

η

d

MGP143

PL (W)

Fig.9 Power gain and efficiency as functions of

load power, typical values.

100

η

(%)

50

0

IN

MGP144

(W)

10

handbook, halfpage

d

P

L

(W)

5

0

0 0.5 1

Class-B operation; VDS= 28 V; IDQ=10mA;

=47Ω; f = 175 MHz.

R

GS

P

Fig.10 Load power as a function of input power,

typical values.

handbook, full pagewidth

input
50 Ω

f = 175 MHz.

C1

C2

L1

R1

C3

C3

+V

G

D.U.T.

L2

Fig.11 Test circuit for class-B operation.

2003 Oct 13 7

L3

L4

C5

C6

L5

C7

L6

R2

C8

output

50 Ω

C9

MGP145

+V

D

Philips Semiconductors Product specification

HF-VHF power MOS transistor BLF242

List of components (see Fig.11)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C2, C7 film dielectric trimmer 4 to 40 pF 2222 809 08002
C3 multilayer ceramic chip capacitor; note 1 100 pF
C4, C8 ceramic chip capacitor 100 nF 2222 852 47104
C6 film dielectric trimmer 5 to 60 pF 2222 809 08003
C9 electrolytic capacitor 2.2 µF, 40 V
L1 5 turns enamelled 0.7 mm copper wire 53 nH length 5.4 mm

int. dia. 3 mm

leads 2 × 5mm
L2, L3 stripline; note 2 30 Ω 10 × 6mm
L4 11 turns enamelled 1 mm copper wire 500 nH length 15.5 mm

int. dia. 8 mm

leads 2 × 5mm
L5 5 turns enamelled 1 mm copper wire 79 nH length 9.1 mm

int. dia. 5 mm

leads 2 × 5mm
L6 grade 3B Ferroxcube RF choke 4312 020 36640
R1 0.5 W metal film resistor 47 Ω
R2 0.5 W metal film resistor 10 Ω

Notes

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

2. The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass dielectric (εr= 4.5),
thickness1⁄16inch.

2003 Oct 13 8

Philips Semiconductors Product specification

HF-VHF power MOS transistor BLF242

handbook, full pagewidth

strap

C1

rivet

C2

+V

150

strap

70

L6

+V

C5

R2

G

R1

L1

C3
C4

L2 L3

L4

C8

L5

D

C9

C6

C7

Dimensions in mm.
The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully

metallized to serve asearth.Earth connections are made byfixingscrews, copper straps andhollowrivets at the
edges of the board and under the source.

Fig.12 Component layout for 175 MHz class-B test circuit.

2003 Oct 13 9

MGP146

Philips Semiconductors Product specification

HF-VHF power MOS transistor BLF242

50

handbook, halfpage

Z

i

(Ω)

30

10

−10

−30

0

Class-B operation; VDS= 28 V; PL=30W;

=47Ω;Th=25°C.

R

GS

r

i

x

i

100

MGP150

f (MHz)

Fig.13 Input impedance as afunction of frequency

(series components), typical values.

200

100

handbook, halfpage

Z

L

(Ω)

50

0

0 200

Class-B operation; VDS= 28 V; PL=30W;

=47Ω;Th=25°C.

R

GS

R

L

X

L

100

MGP149

f (MHz)

Fig.14 Load impedance as afunction of frequency

(series components), typical values.

20

handbook, halfpage

G

p

(dB)

10

0

0 200

Class-B operation; VDS= 28 V; PL=30W;

=47Ω;Th=25°C.

R

GS

100

f (MHz)

Fig.15 Power gain as a function of frequency,

typical values.

MGP148

2003 Oct 13 10

Philips Semiconductors Product specification

HF-VHF power MOS transistor BLF242

BLF242 scattering parameters

VDS= 28 V; ID= 10 mA; note 1

f (MHz)

s

11

s

21

s

12

s

22

|s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ

5 0.99 −3.40 5.57 177.10 0.01 87.60 1.00 −2.60
10 0.98 −5.80 5.52 175.10 0.01 85.50 1.00 −5.30
20 0.99 −12.40 5.53 169.40 0.02 80.70 0.99 −10.70
30 0.98 −17.90 5.46 164.90 0.03 76.50 0.99 −16.10
40 0.97 −24.10 5.40 159.80 0.04 71.80 0.98 −21.30
50 0.96 −30.10 5.30 154.80 0.05 67.2 0.97 −26.30
60 0.95 −36.10 5.17 149.80 0.06 62.90 0.95 −31.20
70 0.93 −41.60 5.01 145.10 0.06 58.70 0.94 −35.80
80 0.92 −46.40 4.83 141.00 0.07 55.10 0.93 −40.20
90 0.91 −50.90 4.68 137.30 0.08 51.80 0.92 −44.50

100 0.90 −55.20 4.55 133.60 0.08 48.50 0.90 −48.70
125 0.87 −66.60 4.23 124.20 0.09 40.10 0.87 −58.40
150 0.84 −76.70 3.85 115.60 0.10 32.70 0.84 −66.60
175 0.82 −85.00 3.51 108.60 0.10 27.20 0.82 −74.00
200 0.81 −92.70 3.23 102.10 0.11 22.00 0.81 −80.90
250 0.78 −106.30 2.72 89.90 0.10 12.50 0.78 −92.10
300 0.78 −117.30 2.33 80.30 0.10 6.10 0.78 −101.80
350 0.77 −126.90 2.00 71.40 0.09 1.00 0.78 −109.70
400 0.78 −135.60 1.74 63.90 0.08 −1.50 0.79 −116.80
450 0.79 −143.20 1.53 56.80 0.06 −1.80 0.80 −123.00
500 0.79 −150.30 1.36 51.00 0.05 2.10 0.81 −128.80
600 0.81 −163.30 1.09 40.80 0.03 33.70 0.84 −139.00
700 0.82 −175.10 0.89 32.70 0.05 74.30 0.86 −147.90
800 0.83 173.80 0.74 26.80 0.08 87.20 0.87 −155.90
900 0.83 163.20 0.63 23.00 0.11 86.30 0.89 −162.90

1000 0.83 152.90 0.54 21.70 0.28 144.80 0.65 175.60

Note

1. For more extensive s-parameters see internet:
http://www.semiconductors.philips.com/markets/communications/wirelesscommunication/broadcast.

2003 Oct 13 11

Philips Semiconductors Product specification

HF-VHF power MOS transistor BLF242

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 4 leads SOT123A

D

A

F

D

1

H

43

α

q

U

1

C

B

w

C

M M

2

b

A

c

U

p

2

1

w

2

H

0 5 10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

5.82

5.56

c

Db

9.73

0.18

9.47

0.10

0.385

0.383

0.007

0.004

IEC JEDEC EIAJ

0.373

0.371

D

9.78

9.42

F

1

20.71

2.72

2.31

0.107

0.091

3.33

19.93

3.04

0.815

0.131

0.785

0.120

REFERENCES

Q

4.63

4.11

q

18.42

0.725

pH

0.182

0.162

UNIT

mm

inches

A

7.47

6.37

0.294

0.251

OUTLINE

VERSION

SOT123A

0.229

0.219

MM

1

24.87

24.64

0.980

0.970

M

A

B

U2U

1

6.48

9.78

6.22

9.39

0.255

0.385

0.245

0.370

U

3

Q

w

w

1

3

0.510.25

0.0200.010

EUROPEAN

PROJECTION

αU

2

45°

ISSUE DATE

99-03-29

2003 Oct 13 12

Philips Semiconductors Product specification

HF-VHF power MOS transistor BLF242

DATA SHEET STATUS

LEVEL

DATA SHEET

STATUS

(1)

PRODUCT

STATUS

(2)(3)

DEFINITION

I Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

III Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. Fordata sheets describingmultiple typenumbers, the highest-levelproduct status determinesthe datasheet status.

DEFINITIONS

DISCLAIMERS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting valuesdefinition  Limiting values givenare in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese orat anyotherconditions abovethose givenin the
Characteristics sectionsof the specification isnot implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation orwarrantythat suchapplicationswill be
suitable for the specified use without further testing or
modification.

Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably beexpected toresult inpersonal injury.Philips
Semiconductorscustomers usingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance.When theproduct isin full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductorsassumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2003 Oct 13 13

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [email protected].

© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document doesnot form part of any quotation orcontract, is believed to be accurate andreliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 613524/03/pp14 Date of release: 2003Oct 13 Document order number: 9397 750 11583

SCA75