Philips BLF2048 Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

M3D427

BLF2048

UHF push-pull power
LDMOS transistor

Preliminary specification 1999 Nov 23

Preliminary specification

0

UHF push-pull power LDMOS transistor BLF2048

FEATURES

• High power gain

• Easy power control

• Excellent ruggedness

• Source on underside eliminates DC isolators, reducing

common mode inductance

• Designed for broadband operation (HF to 2.2 GHz).

APPLICATIONS

• Common source class-AB operation for PCN and PCS
applications in the 1800 to 2200 MHz frequency range.

DESCRIPTION

Push-pull silicon N-channel enhancement mode lateral
D-MOS transistor encapsulated in a 4-lead flange package
(SOT539A) with a ceramic cap. The common source is
connected to the mounting flange.

QUICK REFERENCE DATA

RF performance at T

=25°C in a common source test circuit.

h

PINNING - SOT539A

PIN DESCRIPTION

1drain 1
2drain 2
3gate 1
4gate 2
5 source connected to flange

12

Top view

Fig.1 Simplified outline.

43

5

MBK88

MODE OF OPERATION

class-AB (2-tone) f

f

(MHz)

= 2200; f2= 2200.1

1

V

(V)

DS

P

(W)

L

G

p

(dB)

η

(%)

D

d

im

(dBc)

26 120 (PEP) >10 >30 ≤−26
28 140 (PEP) typ. 11.2 typ. 31 typ. −25

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GS

I

D

T

stg

T

j

drain-source voltage − 65 V
gate-source voltage −±15 V
drain current (DC) − 18 A
storage temperature −65 +150 °C
junction temperature − 200 °C

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

1999 Nov 23 2

Preliminary specification

UHF push-pull power LDMOS transistor BLF2048

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

R

th mb-h

Note

1. Thermal resistance is determined under nominal 2-tone RF operating conditions.

CHARACTERISTICS

T

=25°C; per section; unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GSth

I

DSS

I

DSX

I

GSS

g

fs

R

DSon

C

rs

thermal resistance from junction to mounting-base PL=120W; Tmb=50°C,

0.35 K/W

note 1

thermal resistance from mounting-base to heatsink 0.15 K/W

drain-source breakdown voltage VGS=0; ID=1.4mA 65 −−V
gate-source threshold voltage VDS=10V; ID= 140 mA 1.5 − 3.5 V
drain-source leakage current VGS=0; VDS=26V −−10 µA
drain cut-off current VGS=V

+9V; VDS=10V 18 −−A

GS(th)

gate leakage current VGS= ±15 V; VDS=0 −−250 nA
forward transconductance VDS=10V; ID=5A − 4 − S
drain-source on-state resistance VGS=V

+9V; ID=5A − 0.17 −Ω

GS(th)

feedback capacitance VGS=0; VDS=26V; f=1MHz − 3.4 − pF

Notes

1. Capacitance of die only.

APPLICATION INFORMATION

RF performance in a common source class-AB circuit. T

MODE OF OPERATION

class-AB (2-tone) f

= 2200; f2= 2200.1

1

f

(MHz)

=25°C; R

h

V

DS

(V)

(mA)

= 0.5 K/W; unless otherwise specified..

th j-h

I

DQ

P

(W)

L

G

p

(dB)

η

(%)

D

d

im

(dBc)

26 2 x 400 120 (PEP) >10 >30 ≤−26
28 2 x 400 140 (PEP) typ. 11.2 typ. 31 typ. −25

Ruggedness in class-AB operation

The BLF2048 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: V

= 26 V; f = 2200 MHz, PL= 120 W (CW).

DS

1999 Nov 23 3

Preliminary specification

Fig.2 Power gain and drain efficiency as functions of

peak envelope load power; typical values.

f1=2000MHz; f2= 2000.1 MHz;
I

DQ

=2x400mA; T

h

≤ 25 °C.

f1=2000MHz; f2= 2000.1 MHz;
I

DQ

=2x400mA; T

h

≤ 25 °C.

Fig.4 Intermodulation distortion as a function of

peak envelope load power; typical values.

UHF push-pull power LDMOS transistor BLF2048

20

G

P

(dB)

VDS = 26 V

16

G

12

8

P

η

D

4

0

0 40 80 120 160 200

P

28 V

28 V

26 V

(PEP) (W)

L

50

40

30

20

10

0

η

(%)

20

D

G

P

(dB)

16

12

G

P

η

8

D

VDS = 26 V

26 V

4

0

28 V

28 V

50

40

30

20

10

0

η

(%)

D

0 40 80 120 160 200

P

(PEP) (W)

L

f1=2200MHz; f2= 2200.1 MHz;

=2x400mA; T

I

DQ

≤ 25 °C.

h

Fig.3 Power gain and drain efficiency as functions of

peak envelope load power; typical values.

-10

d

IM

(dBc)

-20

-30
d

-40

d

5

-50

-60

0 40 80 120 160 200

1999 Nov 23 4

-10

d

IM

VDS = 26 V

(dBc)

VDS = 26 V

-20

28 V

28 V

-30

3

28 V

26 V

-40

-50

d

3

d

5

26 V

28 V

-60
0 40 80 120 160 200

P

(PEP) (W)

L

f1=2200MHz; f2= 2200.1 MHz;

=2x400mA; T

I

DQ

≤ 25 °C.

h

P

(PEP) (W)

L

Fig.5 Intermodulation distortion as a function of

peak envelope load power; typical values.