Philips BLF2047L Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D379
BLF2047L
UHF power LDMOS transistor
Product specification
Supersedes data of 1999 Apr 01
1999 Dec 06
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2047L
FEATURES
• High power gain
• Easy power control
• Excellent ruggedness
• Source on underside eliminates DC isolators, reducing
common mode inductance
• Designed for broadband operation (1.8 to 2 GHz)
• Internal input and output matching for high gain and
efficiency.
APPLICATIONS
• Common source class-AB operation for PCN and PCS
applications in the 1800 to 2000 MHz frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistors encapsulated in a 2-lead SOT502A flange
package with a ceramic cap. The common source is
connected to the mounting flange.
QUICK REFERENCE DATA
RF performance at Th=25°C in a common source test circuit.
PINNING
PIN DESCRIPTION
1 drain
2 gate
3 source, connected to flange
handbook, halfpage
Top view
1
2
Fig.1 Simplified outline SOT502A.
3
MBK394
MODE OF OPERATION
Two-tone, class-AB f
f
(MHz)
= 2000; f2= 2000.1 26 65 (PEP) >10.5 >30 ≤−25
1
V
(V)
DS
P
(W)
L
G
p
(dB)
η
(%)
D
d
(dBc)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
DS
V
GS
I
D
T
stg
T
j
drain-source voltage − 65 V
gate-source voltage −±15 V
DC drain current − 9A
storage temperature −65 +150 °C
junction temperature − 200 °C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
im
1999 Dec 06 2
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2047L
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-h
thermal resistance from junction to
heatsink
Note
1. Determined under specified RF operating conditions.
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
C
rss
drain-source breakdown voltage VGS= 0; ID= 1.4 mA 65 −−V
gate-source threshold voltage VDS= 10 V; ID= 140 mA 1.5 − 3.5 V
drain-source leakage current VGS= 0; VDS=26V −−10 µA
on-state drain current VGS=V
gate leakage current VGS= ±15 V; VDS=0 −−250 nA
forward transconductance VDS= 10 V; ID=5A − 4 − S
drain-source on-state resistance VGS=V
feedback capacitance VGS= 0; VDS= 26 V; f = 1 MHz − 3.4 − pF
Th=25°C, P
GS th
GS th
= 152 W, note 1 1.15 K/W
tot
+9V; VDS=10V 18 −−A
+9V; ID=5A − 0.17 −Ω
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
MODE OF OPERATION
Two-tone, class-AB f
= 2000; f2= 2000.1 26 350 65 (PEP) >10.5 >30 ≤−25
1
f
(MHz)
=25°C; R
h
V
DS
(V)
= 1.15 K/W, unless otherwise specified.
th j-h
I
DQ
(mA)
P
(W)
L
G
p
(dB)
η
(%)
D
d
im
(dBc)
Ruggedness in class-AB operation
The BLF2047L is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V
= 26 V; IDQ= 350 mA; PL= 65 W; f = 2000 MHz.
DS
1999 Dec 06 3
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2047L
15
handbook, halfpage
G
p
(dB)
10
5
0 100
f1= 2000 MHz; f2= 2000.1 MHz; VDS=26V;
= 350 mA; Th≤ 25 °C.
I
DQ
G
p
η
D
20 40 60 80
PL (PEP) (W)
Fig.2 Power gain and drain efficiency as a
function of load power; typical values.
MGS950
50
η
D
(%)
40
30
20
10
0
handbook, halfpage
0
d
im
(dBc)
−10
−20
−30
d
3
−40
−50
−60
f1= 2000 MHz; f2= 2000.1 MHz; VDS=26V;
= 350 mA; Th≤ 25 °C.
I
DQ
d
5
d
7
0 10020 40 60 80
PL (PEP) (W)
MGS951
Fig.3 Intermodulation distortion as a function of
load power; typical values.
2.2
MGS952
f (GHz)
handbook, halfpage
8
Z
i
(Ω)
6
x
4
2
0
−2
1.6 1.8 2 2.4
VDS= 26 V; ID= 350 mA; PL= 65 W; Th≤ 25 °C.
i
r
i
Fig.4 Inputimpedance as a function of frequency
(series components); typical values.
1999 Dec 06 4
2.2
MGS953
f (GHz)
handbook, halfpage
4
Z
L
(Ω)
2
0
−2
−4
−6
1.6 1.8 2 2.4
VDS= 26 V; ID= 350 mA; PL= 65 W; Th≤ 25 °C.
R
L
X
L
Fig.5 Loadimpedance as a function of frequency
(series components); typical values.
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