Philips BLF2045 Datasheet
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D381
BLF2045
UHF power LDMOS transistor
Preliminary specification 1999 Jul 12
Philips Semiconductors Preliminary specification
4
UHF power LDMOS transistor BLF2045
FEATURES
• High power gain
• Easy power control
• Excellent ruggedness
• Source on underside eliminates DC isolators, reducing
common mode inductance
• Designed for broadband operation.
APPLICATIONS
• Communication transmitter applications (PCN/PCS) in
the 1.8 to 2.2 GHz frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT467A) with a ceramic cap. The common source is
connected to the mounting flange.
PINNING - SOT467A
PIN DESCRIPTION
1drain
2gate
3 source, connected to flange
1
2
Top view
Fig.1 Simplified outline.
3
MBK58
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
CW, class-AB (2-tone) f
=25°C in a common source test circuit.
h
f
(MHz)
= 2000; f2= 2000.1 26 30 (PEP) >10.5 >30 ≤−26
1
V
(V)
DS
P
(W)
L
G
p
(dB)
η
(%)
D
d
im
(dBc)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
GS
I
D
T
stg
T
j
drain-source voltage − 65 V
gate-source voltage −±15 V
drain current (DC) − 4.5 A
storage temperature −65 150 °C
junction temperature − 200 °C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1999 Jul 12 2
Philips Semiconductors Preliminary specification
Fig.2 Input, output and feedback capacitance as
functions of drain-source voltage, typical values.
VGS=0; f=1MHz.
UHF power LDMOS transistor BLF2045
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-h
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
C
is
C
os
C
rs
thermal resistance from junction to heatsink P
=97W; Th=25°C1.8 K/W
tot
drain-source breakdown voltage VGS=0; ID=0.7mA 65 −−V
gate-source threshold voltage VDS=10V; ID=70mA 1.5 − 3.5 V
drain-source leakage current VGS=0; VDS=26V −−5 µA
drain cut-off current VGS=V
+9V; VDS=10V 9 −−A
GSth
gate leakage current VGS= ±15 V; VDS=0 −−125 nA
forward transconductance VDS=10V; ID=2.5A − 2 − S
drain-source on-state resistance VGS=V
+9V; ID=2.5A − 340 − mΩ
GSth
input capacitance VGS=0; VDS=26V; f=1MHz − 38 − pF
output capacitance VGS=0; VDS=26V; f=1MHz − 31 − pF
feedback capacitance VGS=0; VDS=26V; f=1MHz − 1.7 − pF
(pF)
1999 Jul 12 3
100
C
C
oss
C
iis
C
rss
10
1
0 102030
(V)
V
DS
Philips Semiconductors Preliminary specification
Fig.3 Power gain and efficiency as a functions of
peak envelope load power, typical values.
Class-AB operation; VDS=26V; IDQ=180mA;
f
1
=2000MHz; f2= 2000.1 MHz.
UHF power LDMOS transistor BLF2045
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
=25°C; R
h
= 0.4 K/W, unless otherwise specified.
th mb-h
MODE OF OPERATION
CW, class-AB (2-tone) f
f
(MHz)
= 2000; f2= 2000.1 26 30 (PEP) >10.5 >30 ≤−26
1
V
(V)
DS
P
(W)
L
G
p
(dB)
η
(%)
D
d
im
(dBc)
Ruggedness in class-AB operation
The BLF2045 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: V
=26V; PL= 30 W (CW); f = 2000 MHz.
DS
15
G
P
(dB)
10
5
0 1020304050
1999 Jul 12 4
50
η
G
P
η
D
P
(PEP) (W)
L
D
(%)
40
30
20
10
0
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