Philips blf2045 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D381

BLF2045

UHF power LDMOS transistor

Product specification
Supersedes data of 2003 Feb 27

2004 Feb 11

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2045

FEATURES

• Typical 2-tone performance at a supply voltage of 26 V
and IDQ of 500 mA

– Output power = 30 W (PEP)
– Gain = 12.5 dB
– Efficiency = 32%
–dim= −26 dBc.

• Easy power control

• Excellent ruggedness

• High power gain

• Excellent thermal stability

• Designed for broadband operation (1800 to 2200 MHz)

• No internal matching for broadband operation.

APPLICATIONS

• RF power amplifiers for GSM, EDGE, CDMA and
W-CDMA base stations and multicarrier applications in
the 1800 to 2200 MHz frequency range

• Broadcast drivers.

PINNING

PIN DESCRIPTION

1 drain
2 gate
3 source, connected to flange

1

2

Top view

3

MBK584

DESCRIPTION

30 W LDMOS power transistor for base station

Fig.1 Simplified outline.

applications at frequencies from 1800 to 2200 MHz.

ORDERING INFORMATION

PACKAGE

TYPE NUMBER

NAME DESCRIPTION VERSION

BLF2045 − plastic surface mounted package; 3 leads SOT467C

QUICK REFERENCE DATA

RF performance at Th=25°C in a common source test circuit.

MODE OF OPERATION f (MHz) V

(V) PL (W) Gp(dB) ηD(%) dim (dBc)

DS

2-tone, class-AB f1= 2000; f2= 2000.1 26 30 (PEP) >10 >30 ≤−25

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

2004 Feb 11 2

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2045

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER MIN. MAX. UNIT

V

DS

V

GS

I

D

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-h)

Note

1. Thermal resistance is determined under specified RF operating conditions.

drain-source voltage − 65 V
gate-source voltage −±15 V
drain current (DC) − 4.5 A
storage temperature −65 +150 °C
junction temperature − 200 °C

thermal resistance from junction to heatsink P

= 87.5 W; Th=25°C; note 1 2.1 K/W

tot

2004 Feb 11 3

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2045

CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GSth

I

DSS

I

DSX

I

GSS

g

fs

R

DSon

C

iss

C

oss

C

rss

drain-source breakdown voltage VGS= 0; ID= 0.7 mA 65 −−V
gate-source threshold voltage VDS=10V; ID=70mA 1.5 − 3.5 V
drain-source leakage current VGS= 0; VDS=26V −−5 µA
drain cut-off current VGS=V

+9V; VDS=10V 9 −−A

GSth

gate leakage current VGS= ±15 V; VDS=0 −−125 nA
forward transconductance VDS=10V; ID= 2.5 A − 2 − S
drain-source on-state resistance VGS=V

+9V; ID= 2.5 A − 340 − mΩ

GSth

input capacitance VGS= 0; VDS=26V; f=1MHz − 38 − pF
output capacitance VGS= 0; VDS=26V; f=1MHz − 31 − pF
feedback capacitance VGS= 0; VDS=26V; f=1MHz − 1.7 − pF

2

10

handbook, halfpage

C

(pF)

10

1

0

VGS= 0; f= 1 MHz.

10 20 30

MCD889

C

C

C

VDS (V)

oss

iss

rss

Fig.2 Input, output and feedback capacitance as

functions of drain-source voltage, typical
values.

2004 Feb 11 4

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2045

APPLICATION INFORMATION

RF performance in a common source class-AB circuit. Th=25°C; R

MODE OF OPERATION f (MHz) V

2-tone, class-AB f

= 2000; f2= 2000.1 26 180 30 (PEP) >10 >30 ≤−25

1

(V) IDQ (mA) PL (W) Gp (dB) ηD (%)

DS

Ruggedness in class-AB operation

The BLF2045 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: V

20

handbook, halfpage

G

p

(dB)

16

= 26 V; PL= 30 W (CW); f = 2000 MHz.

DS

MCD890

50

η

D

(%)

40

= 0.65 K/W, unless otherwise specified.

th(mb-h)

d

im

(dBc)

G

12

8

4

0

Class-AB operation; VDS= 26 V; IDQ= 180 mA;

= 2000 MHz; f2= 2000.1 MHz.

f

1

p

η

D

10 20 30 40

050

PL (PEP) (W)

30

20

10

0

Fig.3 Power gain and efficiency as functions of

peak envelope load power; typical values.

2004 Feb 11 5

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2045

handbook, halfpage

0

d

im

(dBc)

−20

−40

−60

010 5020 30 40

VDS=26V;IDQ= 180 mA; Th≤ 25 °C;

= 2000 MHz; f2= 2000.1 MHz.

f

1

d

3

d

5

d

7

MCD891

PL (PEP) (W)

Fig.4 Intermodulation distortion as a function of

peak envelope load power; typical values.

handbook, halfpage

0

d

3

(dBc)

−20

−40

−60

VDS= 26 V; Th≤ 25 °C; f1= 2000 MHz; f2= 2000.1 MHz.
(1) IDQ= 140 mA.
(2) IDQ= 180 mA.
(3) IDQ= 220 mA.

(1)

(3)

(2)

0

10 5020 30 40

MCD892

PL (PEP) (W)

Fig.5 Intermodulation distortion as a function of

peak envelope load power; typical values.

2.1

MCD893

f (GHz)

handbook, halfpage

5

z

i

(Ω)

4

3

2

1

0

1.8 1.9

VDS= 26 V; IDQ= 180 mA; PL= 45 W; Th≤ 25 °C.

Fig.6 Inputimpedance as a function of frequency

Fig.6 Inputimpedance as a function of frequency

(series components); typical values.

(series components); typical values.

x

i

r

i

2 2.2

handbook, halfpage

6

Z

L

(Ω)

4

2

0

−2

−4

−6

1.8 1.9

VDS= 26 V; IDQ= 180 mA; PL= 45 W; Th≤ 25 °C.

R

L

X

L

2 2.2

MCD894

2.1
f (GHz)

Fig.7 Loadimpedance as a function of frequency

(series components); typical values.

2004 Feb 11 6

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2045

handbook, full pagewidth

50 Ω
input

L1

C1

C2

L2

L4

C3

L3 L5

R1

C5

C4

V

gate

C6

L6

L7

L8

L1 2

L10

L11

L9

C7

Fig.8 Class-AB test circuit for 2 GHz.

C11 C12

C10

L14

L13

L15

F1
R2

C13 C14 C15 C16

C9

L16

C8

50 Ω

output

MCD895

V

dd

2004 Feb 11 7

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2045

List of components (see Figs 8 and 9)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C2, C4, C7 and C8 Tekelec variable capacitor; type 37281 0.4 to 2.5 pF
C3 multilayer ceramic chip capacitor; note 1 2.4 pF
C1, C5, C9 and C10 multilayer ceramic chip capacitor; note 1 11 pF
C11 multilayer ceramic chip capacitor; note 2 1 nF
C12 multilayer ceramic chip capacitor 100 nF 2222 581 16641
C6, C13, C14 and C15 tantalum SMD capacitor 4.5 µF; 50 V
C16 electrolytic capacitor 100 µF; 63 V 2222 037 58101
F1 Ferroxcube chip-bead 8DS3/3/8/9-4S2 4330 030 36301
L1 stripline; note 3 50 Ω 13 × 0.9 mm
L2 stripline; note 3 50 Ω 2 × 0.9 mm
L3 stripline; note 3 34.3 Ω 15 × 1.7 mm
L4 and L12 stripline; note 3 50 Ω 37 × 0.9 mm
L5 stripline; note 3 34.3 Ω 6 × 1.7 mm
L6 stripline; note 3 23.6 Ω 13 × 2.9 mm
L7 stripline; note 3 5.6 Ω 6 × 15.8 mm
L8 stripline; note 3 3.5 Ω 6 × 26 mm
L9 stripline; note 3 31.9 Ω 12 × 1.9 mm
L10 stripline; note 3 24.9 Ω 7.4 × 2.7 mm
L11 stripline; note 3 50 Ω 3 × 0.9 mm
L13 stripline; note 3 50 Ω 4.15 × 0.9 mm
L14 stripline; note 3 26.3 Ω 2.5 × 2.5 mm
L15 stripline; note 3 50 Ω 2.8 × 0.9 mm
L16 stripline; note 3 50 Ω 14 × 0.9 mm
R1 and R2 metal film resistor 10 Ω, 0.6 W 2322 156 11009

Notes

1. American Technical Ceramics type 100A or capacitor of same quality.

2. American Technical Ceramics type 100B or capacitor of same quality.

3. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (εr= 6.15); thickness 0.64 mm.

2004 Feb 11 8

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2045

handbook, full pagewidth

PH98072 IN

C6

R1

C5

50

50

60

PH98073 OUT

−

C16

C15

+

F1

R2

C14 C13

C10

C11

C12

C3

C4

C9

C7

C8

PH98073 OUT

MCD896

50 Ω
output

C2

50 Ω
input

C1

PH98072 IN

Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (εr= 6.15), thickness 0.64 mm.

The other side is unetched and serves as a ground plane.

Fig.9 Component layout for 2 GHz class-AB test circuit.

2004 Feb 11 9

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2045

PACKAGE OUTLINE

Flanged LDMOST ceramic package; 2 mounting holes; 2 leads

D

A

3

D

1

U

1

q

1

H

U

2

A

C

p

F

B

w

M M M

1

AB

SOT467C

c

E

1

E

2

w

M M

scale

18.54

17.02

0.73

0.67

C

2

3.43

3.18

0.135

0.125

b

0 5 10 mm

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

mm

OUTLINE
VERSION

SOT467C

A

4.67

3.94

0.184

0.155

b

5.59

5.33

0.220

0.210

cD

0.15

0.10

0.006

0.004

IEC JEDEC EIAJ

9.25

9.04

0.364

0.356

D

1

9.27

9.02

0.365

0.355

E

5.92

5.77

0.233

0.227

E

1

5.97

1.65

5.72

1.40

0.065

0.235

0.055

0.225

REFERENCES

FH p q

UNIT

inch

Q

2.21

1.96

0.087

0.077

14.27

0.562

U

20.45

20.19

0.805

0.795

1

Q

w

U

2

5.97

0.25

5.72

0.235

0.010 0.020

0.225

EUROPEAN

PROJECTION

1

w

2

0.51

ISSUE DATE

99-12-06
99-12-28

2004 Feb 11 10

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2045

DATA SHEET STATUS

LEVEL

DATA SHEET

STATUS

(1)

PRODUCT

STATUS

(2)(3)

DEFINITION

I Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

III Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

DEFINITIONS

DISCLAIMERS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratany other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.

Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2004 Feb 11 11

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Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
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© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands R77/06/pp12 Date of release: 2004 Feb 11 Document order number: 9397 750 12539

SCA76