Philips blf2043f DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D381
BLF2043F
UHF power LDMOS transistor
Preliminary specification 2000 Oct 19
Philips Semiconductors Preliminary specification
4
UHF power LDMOS transistor BLF2043F
FEATURES
• High power gain
• Easy power control
• Excellent ruggedness
• Source on mounting base eliminates DC isolators,
reducing common mode inductance
• Designed for broadband operation (HF to 2.2 GHz).
APPLICATIONS
• Communication transmitter applications in the UHF
frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT467C) with a ceramic cap. The common source is
connected to the mounting base.
QUICK REFERENCE DATA
RF performance at T
=25°C in a common source test circuit.
h
PINNING - SOT467C
PIN DESCRIPTION
1drain
2gate
3 source
1
2
Top view
Fig.1 Simplified outline.
3
MBK58
MODE OF OPERATION
CW, class-AB (2-tone) f
f
(MHz)
= 2200; f2= 2200.1 26 10 (PEP) >11 >30 ≤−26
1
V
(V)
DS
P
(W)
L
G
p
(dB)
η
(%)
D
d
im
(dBc)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
GS
I
D
P
tot
T
stg
T
j
drain-source voltage − 65 V
gate-source voltage −±15 V
drain current (DC) − 2.2 A
total power dissipation Tmb≤ 25 °C − tbf W
storage temperature −65 +150 °C
junction temperature − 200 °C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2000 Oct 19 2
Philips Semiconductors Preliminary specification
Fig.2 Input, output and feedback capacitance as
functions of drain-source voltage, typical
values.
VGS=0; f=1MHz.
UHF power LDMOS transistor BLF2043F
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb
R
th mb-h
Note
1. Thermal resistance is determined under RF operating conditions.
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
C
is
C
os
C
rs
thermal resistance from junction to mounting base Tmb=25°C; note 1 5 K/W
thermal resistance from mounting base to heatsink 0.5 K/W
drain-source breakdown voltage VGS=0; ID=0.2mA 75 −−V
gate-source threshold voltage VDS=10V; ID=20mA 4 − 5V
drain-source leakage current VGS=0; VDS=26V −−1.5 µA
on-state drain current VGS=V
+9V; VDS=10V 2.8 −−A
GSth
gate leakage current VGS= ±15 V; VDS=0 −−40 nA
forward transconductance VDS=10V; ID=0.75A − 0.5 − S
drain-source on-state resistance VGS=10V; ID=0.75A − 1.2 −Ω
input capacitance VGS=0; VDS=26V; f=1MHz − 13 − pF
output capacitance VGS=0; VDS=26V; f=1MHz − 11 − pF
feedback capacitance VGS=0; VDS=26V; f=1MHz − 0.5 − pF
100
C
(pF)
C
oss
Ci
ss
10
C
rss
1
0.1
0 102030
2000 Oct 19 3
(V)
V
DS
Philips Semiconductors Preliminary specification
Fig.3 Power gain and efficiency as functions of
peak envelope load power, typical values.
VDS=26V; IDQ=85mA;
f
1
= 2 000 MHz; f2= 2000.1 MHz.
UHF power LDMOS transistor BLF2043F
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
=25°C; R
h
= 0.4 K/W, unless otherwise specified.
th mb-h
MODE OF OPERATION
CW, class-AB (2-tone) f
f
(MHz)
= 2200; f2= 2200.1 26 85 10 (PEP) >11 >30 ≤−26
1
V
(V)
DS
I
DQ
(mA)
P
(W)
L
G
p
(dB)
η
(%)
D
d
im
(dBc)
Ruggedness in class-AB operation
The BLF2043F is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V
= 26 V; f = 2200 MHz at rated load power.
DS
15
G
P
(dB)
10
5
0
0 4 8 12 16
G
P
(PEP) (W)
P
L
2000 Oct 19 4
60
η
D
(%)
40
η
D
20
0
0
d
im
(dBc)
-20
-40
-60
-80
0481216
VDS=26V; IDQ=85mA; T
= 2 000 MHz; f2= 2000.1 MHz.
f
1
≤ 25 ° C;
h
d
3
d
5
d
7
P
(PEP) (W)
L
Fig.4 Intermodulation distortion as a function of
peak envelope load power; typical values.
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