Philips BLF2043 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D438

BLF2043

UHF power LDMOS transistor

Objective specification

1999 Mar 18

Philips Semiconductors Objective specification

UHF power LDMOS transistor BLF2043

FEATURES

• High power gain

• Easy power control

• Excellent ruggednes s

• Source on mounting base eliminates DC isolators,

reducing common mode inductance

• Designed for broadband operation (HF to 2.2 GHz).

APPLICATIONS

• Communication transmitter applications in the UHF
frequency range.

DESCRIPTION

Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flangless package
(SOT538A) with a ceramic cap. The common source is
connected to the mounting base.

QUICK REFERENCE DATA

RF performance at T

=25°C in a common source test circuit.

h

PINNING - SOT538A

PIN DESCRIPTION

1 drain
2 gate
3 source

handbook, halfpage

Top view

1

2

Fig.1 Simplified outline.

3

MBK905

MODE OF OPERATION

CW, class-AB (2-tone)

CW, class-AB (1-tone)

f

(MHz)

= 2000; f2= 2000.1 26 10 (PEP) >12 >30 ≤−30

f

1

f

= 2200; f2= 2200.1 26 10 (PEP) >11 >30 ≤−30

1

V

(V)

DS

P

(W)

L

2000 26 10 >11 >40 −
2200 26 10 >10 >40 −

G

(dB)

p

η

D

(%)

d

im

(dBc)

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GS

I

D

P

tot

T

stg

T

j

drain-source voltage − 65 V
gate-source voltage −±15 V
drain current (DC) − 2.2 A
total power dissipation Tmb≤ 25 °C − tbf W
storage temperature −65 150 °C
junction temperature − 200 °C

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

1999 Mar 18 2