Philips blf2043 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D438

BLF2043

UHF power LDMOS transistor

Product specification
Supersedes data of 2002 Sep 10

2003 Feb 10

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2043

FEATURES

• Typical 2-tone performance at a supply voltage of 26 V
and IDQ of 85 mA:

– Output power = 10 W (PEP)
– Gain = 12 dB
– Efficiency = 36.5%
– dim = −32 dBc

• Easy power control

• Excellent ruggedness

• High power gain

• Excellent thermal stability

• Designed for broadband operation (HF to 2200 MHz)

• No internal matching for broadband operation.

APPLICATIONS

• RF power amplifiers for GSM, EDGE and CDMA base
stations and multicarrier applications in the
HF to 2200 MHz frequency range

• Broadcast drivers.

PINNING - SOT538A

PIN DESCRIPTION

1 drain
2 gate
3 source, connected to mounting base

1

2

Top view

Fig.1 Simplified outline.

3

MBK905

DESCRIPTION

10 W LDMOS power transistor for base station
applications at frequencies from HF to 2200 MHz.

QUICK REFERENCE DATA

Typical RF performance at Th=25°C in a common source test circuit.

MODE OF OPERATION

CW, class-AB (2-tone) f

f

(MHz)

= 2000; f2= 2000.1 26 10 (PEP) 12.5 36.5 −32

1

V

(V)

DS

P

(W)

L

G

(dB)

p

η

(%)

D

(dBc)

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GS

I

D

T

stg

T

j

drain-source voltage − 75 V
gate-source voltage −±15 V
drain current (DC) − 2.2 A
storage temperature −65 +150 °C
junction temperature − 200 °C

CAUTION

d

im

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

2003 Feb 10 2

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2043

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-h

Note

1. Thermal resistance is determined under RF operating conditions.

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GSth

I

DSS

I

DSX

I

GSS

g

fs

R

DSon

C

is

C

os

C

rs

thermal resistance from junction to heatsink Tmb=25°C; note 1 9 K/W

drain-source breakdown voltage VGS= 0; ID= 0.2 mA 65 −−V
gate-source threshold voltage VDS= 10 V; ID=20mA 4 − 5V
drain-source leakage current VGS= 0; VDS=26V −−1.5 µA
on-state drain current VGS=V

+9V; VDS=10V 2.8 −−A

GSth

gate leakage current VGS= ±15 V; VDS=0 −−40 nA
forward transconductance VDS= 10 V; ID= 0.75 A − 0.5 − S
drain-source on-state resistance VGS= 10 V; ID= 0.75 A − 1.2 −Ω
input capacitance VGS= 0; VDS= 26 V; f = 1 MHz − 11 − pF
output capacitance VGS= 0; VDS= 26 V; f = 1 MHz − 9 − pF
feedback capacitance VGS= 0; VDS= 26 V; f = 1 MHz − 0.5 − pF

APPLICATION INFORMATION

RF performance in a common source class-AB circuit. T

MODE OF OPERATION

CW, class-AB (2-tone) f

= 2000; f2= 2000.1 26 85 10 (PEP) >11.8 >33 ≤−26

1

f

(MHz)

=25°C; R

h

V

DS

(V)

I

DQ

(mA)

= 0.4 K/W, unless otherwise specified.

th mb-h

P

(W)

L

G

(dB)

p

η

(%)

D

d

im

(dBc)

Ruggedness in class-AB operation

The BLF2043is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: V

= 26 V; f = 2000 MHz at rated load power.

DS

2003 Feb 10 3

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2043

15

handbook, halfpage

G

p

(dB)

10

5

0

0

G

p

η

D

510

MCE017

15

PL (PEP) (W)

Fig.2 Power gain and efficiency as functions of

peak envelope load power; typical values.

60

η

D

(%)

40

20

0

20

handbook, halfpage

0

d

im

(dBc)

−20

−40

−60

−80

0510

d

3

d

5

d

7

MCE018

15

PL (PEP) (W)

20

Fig.3 Intermodulation distortion as a function of

peak envelope load power; typical values.

handbook, halfpage

0

d

im

(dBc)

−10

−20

−30

−40

−50

0 5 10 20

(1) IDQ= 55 mA.
(2) IDQ= 85 mA.
(3) IDQ= 115 mA.

(1)
(3)

(2)

MCE019

15

PL (PEP) (W)

Fig.4 Third order intermodulation distortion as a

function of peak envelope load power and
IDQ setting; typical values.

2003 Feb 10 4

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2043

10

handbook, halfpage

Z

i

(Ω)

8

x

6

4

2

0

1.8 2 2.2

VDS= 26 V; IDQ= 25 mA; PL= 10 W; Th≤ 25 °C.
Impedance measured at reference planes (see Fig.7).

i

r

i

MGS999

f (GHz)

Fig.5 Input impedance as a function of frequency

(series components); typical values.

handbook, halfpage

6

Z

L

(Ω)

4

2

0

−2

−4

−6

1.8 2 2.2

VDS= 26 V; IDQ= 25 mA; PL= 10 W; Th≤ 25 °C.
Impedance measured at reference planes (see Fig.7).

R

L

X

L

MGT001

f (GHz)

Fig.6 Load impedance as a function of frequency

(series components); typical values.

handbook, halfpage

reference planes

MGT002

Fig.7 Measuring reference planes SOT538A.

2003 Feb 10 5

handbook, halfpage

Fig.8 Definition of transistor impedance.

drain

gate

Z

i

Z

L

MCE020

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2043

handbook, full pagewidth

V

gate

output

50 Ω

V

DD

C16

C12

L10

C10

C18 C19

C13 C14

C11

L11

C15

output

50 Ω

MCE021

L2

C17

C1

L3

C2

R1

L4

C3

C6 C7

L7

L5

L6

C4

C5

L8

C8

L1

L9

C9

Fig.9 Class-AB test circuit for 2 GHz.

2003 Feb 10 6

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2043

List of components (see Figs 8 and 9)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C2 multilayer ceramic chip capacitor; note 1 6.8 pF
C3 multilayer ceramic chip capacitor; note 1 1.0 pF
C4, C10, C11 tekelec variable capacitor; type 37271 0.6 to 4.5 pF
C5, C7 multilayer ceramic chip capacitor; note 1 2.0 pF
C6 multilayer ceramic chip capacitor; note 1 2.7 pF
C8 multilayer ceramic chip capacitor; note 1 0.2 pF
C9 multilayer ceramic chip capacitor; note 1 0.6 to 4.5 pF
C12 multilayer ceramic chip capacitor; note 1 10 pF
C13 multilayer ceramic chip capacitor; note 1 51 pF
C14 multilayer ceramic chip capacitor; note 1 120 pF
C15 multilayer ceramic chip capacitor 100nF 2222 581 16641
C16 electrolytic capacitor 100 µF; 63 V 2222 037 58101
C17, C18 tantalum SMD capacitor 10 µF; 35 V
C19 multilayer ceramic chip capacitor; note 2 1 nF
L1, L2 3 turns enamelled 0.5 mm copper wire 3 loops; d=3mm

length = 3 mm
L3 stripline; note 3 50 Ω 3.5 × 1.5 mm
L4 stripline; note 3 50 Ω 1.0 × 1.5 mm
L5 stripline; note 3 73.2 Ω 5 × 2mm
L6 stripline; note 3 31 Ω 11.0 × 0.8 mm
L7, L8 stripline; note 3 64.7 Ω 1.5 × 1.0 mm
L9 stripline; note 3 31 Ω 14.4 × 3.0 mm
L10, L11 stripline; note 3 50 Ω 3.5 × 1.5 mm
R1 metal film resistor 2.2 kΩ; 0.6 W

Notes

1. American Technical Ceramics type 100A or capacitor of same quality.

2. American Technical Ceramics type 100B or capacitor of same quality.

3. The striplines are on a double copper-clad printed-circuit board with Rogers 5880 dielectric (ε

0.51 mm.

2003 Feb 10 7

= 2.2); thickness

r

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2043

handbook, full pagewidth

BLF2043 TEST CIRCUIT

C2

C1

C3

C8

C16

C15
C14
C13
C12

L1

C19

C17 C18

R1

C5

C4

C6

BLF2043

C7

BLF2043 TEST CIRCUIT

L2

C9

C11

C10

54

52

Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (εr= 2.2), thickness 0.51 mm.

MCE022

Fig.10 Component layout for 2 GHz class-AB test circuit.

2003 Feb 10 8

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2043

PACKAGE OUTLINE

Ceramic surface mounted package; 2 leads SOT538A

D

A

3

D

1

D

2

1

z1 (4×)

H

2

b

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

mm

A

2.95

2.29

0.116

0.090

1.35

1.19

0.053

0.047

0.23

0.18

0.009

0.007

5.16

5.00

0.203

0.197

D

4.65

4.50

0.183

0.177

1

5.16

5.00

0.203

0.197

UNIT cbD

inches

w

M M

1

0 2.5 5 mm

D

E

2

4.14

3.99

0.163

0.157

B

E

1

3.63

3.48

0.143

0.137

z4 (4×)z2 (4×)

B

scale

E

2

4.14

3.99

0.163

0.157

HLQ α

7.49

7.24

0.295

0.285

2.03

1.27

0.080

0.050

A

E2E

0.10

0.00

0.004

0.000

1

z3 (4×)

L

w

1

0.25

0.010

c

0.023

0.017

α

Q

z

1

0.58

0.43

z

2

0.25

0.18

0.010

0.007

z

3

0.97

0.81

0.038

0.032

E

z

4

0.51

0.00

0.020

0.000

7°
0°

7°
0°

OUTLINE
VERSION

SOT538A

IEC JEDEC JEITA

REFERENCES

2003 Feb 10 9

EUROPEAN

PROJECTION

ISSUE DATE

00-03-03
02-08-20

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2043

DATA SHEET STATUS

LEVEL

DATA SHEET

STATUS

(1)

PRODUCT

STATUS

(2)(3)

DEFINITION

I Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

III Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

DEFINITIONS

DISCLAIMERS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratany other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.

Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2003 Feb 10 10

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2043

NOTES

2003 Feb 10 11

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [email protected].

© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 613524/06/pp12 Date of release:2003 Feb 10 Document order number: 9397750 10917

SCA75