Philips BLF2022-90 Technical data

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ook, halfpage

M3D379

BLF2022-90

UHF power LDMOS transistor

Product specification
Supersedes data of 2002 Sep 09

2003 Feb 24

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2022-90

FEATURES

• Typical W-CDMA performance at a supply voltage of
28 V and IDQ of 750 mA:

– Output power = 11.5 W (AV)
– Gain = 12.5 dB
– Efficiency = 20%
– ACPR = −42 dBc at 3.84 MHz
–dim = −36 dBc

• Easy power control

• Excellent ruggedness

• High power gain

• Excellent thermal stability

• Designed for broadband operation (2000 to 2200 MHz)

• Internally matched for ease of use.

APPLICATIONS

• RF power amplifiers for W-CDMA base stations and
multicarrier applications in the 2000 to 2200 MHz
frequency range.

PINNING - SOT502A

PIN DESCRIPTION

1 drain
2 gate
3 source, connected to flange

handbook, halfpage

Top view

1

2

Fig.1 Simplified outline.

3

MBK394

DESCRIPTION

90 W LDMOS power transistor for base station
applications at frequencies from 2000 to 2200 MHz.

QUICK REFERENCE DATA

Typical RF performance at Th=25°C in a common source class-AB test circuit.

MODE OF OPERATION

2-tone, class-AB f

f

(MHz)

= 2170; f2= 2170.1 28 750 90 (PEP) 12.8 35.7 −28.5 −

1

V

(V)

DS

I

DQ

(mA)

P

(W)

L

G

p

(dB)

η

(%)

D

d

(dBc)

im

ACLR

(dBc)

W-CDMA, 3GPP test
model 1, 64 channels

2140 28 750 15 (AV) 13.2 20 −−40

with 66% clipping

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

5

2003 Feb 24 2

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2022-90

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER MIN. MAX. UNIT

V

DS

V

GS

I

D

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-c

R

th c-h

Notes

1. Thermal resistance is determined under specified RF operating conditions.

2. Depending on mounting conditions.

drain-source voltage − 65 V
gate-source voltage −±15 V
DC drain current − 12 A
storage temperature −65 +150 °C
junction temperature − 200 °C

thermal resistance from junction to case Th=25°C; note 1 0.65 K/W
thermal resistance from case to heatsink Th=25°C; note 2 0.2 K/W

CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GSth

I

DSS

I

DSX

I

GSS

g

fs

R

DSon

C

rs

drain-source breakdown voltage VGS= 0; ID= 2.1 mA 65 −−V
gate-source threshold voltage VDS= 10 V; ID= 210 mA 4.4 − 5.5 V
drain-source leakage current VGS= 0; VDS=26V −−15 µA
on-state drain current VGS=V

+9V; VDS=10V 27 −−A

GSth

gate leakage current VGS= ±15 V; VDS=0 −−38 nA
forward transconductance VDS= 10 V; ID= 7.5 A − 6.2 − S
drain-source on-state resistance VGS=V

+9V; ID= 7.5 A − 0.1 −Ω

GSth

feedback capacitance VGS= 0; VDS= 26 V; f = 1 MHz − 5.1 − pF

APPLICATION INFORMATION

RF performance in a common source class-AB circuit. T

MODE OF OPERATION

2-tone, class-AB f

= 2170; f2= 2170.1 28 750 90 (PEP) >11 >30 ≤−25

1

f

(MHz)

=25°C; R

h

V

DS

(V)

= 0.65 K/W; unless otherwise specified.

th j-c

I

DQ

(mA)

P

(W)

L

G

p

(dB)

η

(%)

D

d

im

(dBc)

Ruggedness in class-AB operation

The BLF2022-90 iscapable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V

= 28 V; IDQ= 750 mA; PL= 90 W (CW); f = 2170 MHz.

DS

2003 Feb 24 3

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2022-90

15

handbook, halfpage

G

p

(dB)

14

13

12

11

10

0 40 120

VDS= 28 V; IDQ= 750 mA; Th=25°C;

= 2170 MHz; f2= 2170.1 MHz.

f

1

80

MLD837

η

D

G

p

PL (PEP) (W)

Fig.2 Powergainanddrainefficiencyasfunctions

of peak envelope load power; typical
values.

50

η

(%)

40

30

20

10

0

D

handbook, halfpage

0

d

im

(dBc)

−20

−40

−60

−80

040

VDS= 28 V; IDQ= 750 mA; Th=25°C;

= 2170 MHz; f2= 2170.1 MHz.

f

1

80 120

MLD838

d

3

d

5

d

7

P

(PEP) (W)

L

Fig.3 Intermodulation distortion as a function of

peak envelope load power; typical values.

15

handbook, halfpage

G

p

(dB)

14

G

p

(1)

(2)

13

12

11

10

0 40 120

VDS= 28 V; Th=25°C;

= 2170 MHz; f2= 2170.1 MHz.

f

1

(1) I

= 900 mA.

DQ

(2) IDQ= 750 mA.

(3)

(4)

(5) (6)

= 600 mA.

(3) I

DQ

(4) IDQ= 600 mA.

80

MLD839

η

D

PL (PEP) (W)

(5) IDQ= 750 mA.
(6) IDQ= 900 mA.

Fig.4 Powergainanddrainefficiencyasfunctions

of peak envelope load power; typical
values.

50

η

(%)
40

30

20

10

0

D

handbook, halfpage

0

d

im

(dBc)

−20

−40

−60

−80

040

VDS= 28 V; Th=25°C;

= 2170 MHz; f2= 2170.1 MHz.

f

1

(1) IDQ= 600 mA. (2) IDQ= 900 mA. (3) IDQ= 750 mA.

(1)
(2)

(3)

80 120

MLD840

PL (PEP) (W)

Fig.5 Third order intermodulation distortion as a

function of peak envelope load power;
typical values.

2003 Feb 24 4