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DATA SH EET
ook, halfpage
M3D379
BLF2022-90
UHF power LDMOS transistor
Product specification
Supersedes data of 2002 Sep 09
2003 Feb 24
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Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2022-90
FEATURES
• Typical W-CDMA performance at a supply voltage of
28 V and IDQ of 750 mA:
– Output power = 11.5 W (AV)
– Gain = 12.5 dB
– Efficiency = 20%
– ACPR = −42 dBc at 3.84 MHz
–dim = −36 dBc
• Easy power control
• Excellent ruggedness
• High power gain
• Excellent thermal stability
• Designed for broadband operation (2000 to 2200 MHz)
• Internally matched for ease of use.
APPLICATIONS
• RF power amplifiers for W-CDMA base stations and
multicarrier applications in the 2000 to 2200 MHz
frequency range.
PINNING - SOT502A
PIN DESCRIPTION
1 drain
2 gate
3 source, connected to flange
handbook, halfpage
Top view
1
2
Fig.1 Simplified outline.
3
MBK394
DESCRIPTION
90 W LDMOS power transistor for base station
applications at frequencies from 2000 to 2200 MHz.
QUICK REFERENCE DATA
Typical RF performance at Th=25°C in a common source class-AB test circuit.
MODE OF OPERATION
2-tone, class-AB f
f
(MHz)
= 2170; f2= 2170.1 28 750 90 (PEP) 12.8 35.7 −28.5 −
1
V
(V)
DS
I
DQ
(mA)
P
(W)
L
G
p
(dB)
η
(%)
D
d
(dBc)
im
ACLR
(dBc)
W-CDMA, 3GPP test
model 1, 64 channels
2140 28 750 15 (AV) 13.2 20 −−40
with 66% clipping
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
5
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Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2022-90
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
DS
V
GS
I
D
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-c
R
th c-h
Notes
1. Thermal resistance is determined under specified RF operating conditions.
2. Depending on mounting conditions.
drain-source voltage − 65 V
gate-source voltage −±15 V
DC drain current − 12 A
storage temperature −65 +150 °C
junction temperature − 200 °C
thermal resistance from junction to case Th=25°C; note 1 0.65 K/W
thermal resistance from case to heatsink Th=25°C; note 2 0.2 K/W
CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
C
rs
drain-source breakdown voltage VGS= 0; ID= 2.1 mA 65 −−V
gate-source threshold voltage VDS= 10 V; ID= 210 mA 4.4 − 5.5 V
drain-source leakage current VGS= 0; VDS=26V −−15 µA
on-state drain current VGS=V
+9V; VDS=10V 27 −−A
GSth
gate leakage current VGS= ±15 V; VDS=0 −−38 nA
forward transconductance VDS= 10 V; ID= 7.5 A − 6.2 − S
drain-source on-state resistance VGS=V
+9V; ID= 7.5 A − 0.1 −Ω
GSth
feedback capacitance VGS= 0; VDS= 26 V; f = 1 MHz − 5.1 − pF
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
MODE OF OPERATION
2-tone, class-AB f
= 2170; f2= 2170.1 28 750 90 (PEP) >11 >30 ≤−25
1
f
(MHz)
=25°C; R
h
V
DS
(V)
= 0.65 K/W; unless otherwise specified.
th j-c
I
DQ
(mA)
P
(W)
L
G
p
(dB)
η
(%)
D
d
im
(dBc)
Ruggedness in class-AB operation
The BLF2022-90 iscapable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V
= 28 V; IDQ= 750 mA; PL= 90 W (CW); f = 2170 MHz.
DS
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Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2022-90
15
handbook, halfpage
G
p
(dB)
14
13
12
11
10
0 40 120
VDS= 28 V; IDQ= 750 mA; Th=25°C;
= 2170 MHz; f2= 2170.1 MHz.
f
1
80
MLD837
η
D
G
p
PL (PEP) (W)
Fig.2 Powergainanddrainefficiencyasfunctions
of peak envelope load power; typical
values.
50
η
(%)
40
30
20
10
0
D
handbook, halfpage
0
d
im
(dBc)
−20
−40
−60
−80
040
VDS= 28 V; IDQ= 750 mA; Th=25°C;
= 2170 MHz; f2= 2170.1 MHz.
f
1
80 120
MLD838
d
3
d
5
d
7
P
(PEP) (W)
L
Fig.3 Intermodulation distortion as a function of
peak envelope load power; typical values.
15
handbook, halfpage
G
p
(dB)
14
G
p
(1)
(2)
13
12
11
10
0 40 120
VDS= 28 V; Th=25°C;
= 2170 MHz; f2= 2170.1 MHz.
f
1
(1) I
= 900 mA.
DQ
(2) IDQ= 750 mA.
(3)
(4)
(5) (6)
= 600 mA.
(3) I
DQ
(4) IDQ= 600 mA.
80
MLD839
η
D
PL (PEP) (W)
(5) IDQ= 750 mA.
(6) IDQ= 900 mA.
Fig.4 Powergainanddrainefficiencyasfunctions
of peak envelope load power; typical
values.
50
η
(%)
40
30
20
10
0
D
handbook, halfpage
0
d
im
(dBc)
−20
−40
−60
−80
040
VDS= 28 V; Th=25°C;
= 2170 MHz; f2= 2170.1 MHz.
f
1
(1) IDQ= 600 mA. (2) IDQ= 900 mA. (3) IDQ= 750 mA.
(1)
(2)
(3)
80 120
MLD840
PL (PEP) (W)
Fig.5 Third order intermodulation distortion as a
function of peak envelope load power;
typical values.
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