Philips BLF2022-90 Technical data

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DATA SH EET

ook, halfpage

M3D379

BLF2022-90

UHF power LDMOS transistor

Product specification
Supersedes data of 2002 Sep 09

2003 Feb 24

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2022-90

FEATURES

• Typical W-CDMA performance at a supply voltage of
28 V and IDQ of 750 mA:

– Output power = 11.5 W (AV)
– Gain = 12.5 dB
– Efficiency = 20%
– ACPR = −42 dBc at 3.84 MHz
–dim = −36 dBc

• Easy power control

• Excellent ruggedness

• High power gain

• Excellent thermal stability

• Designed for broadband operation (2000 to 2200 MHz)

• Internally matched for ease of use.

APPLICATIONS

• RF power amplifiers for W-CDMA base stations and
multicarrier applications in the 2000 to 2200 MHz
frequency range.

PINNING - SOT502A

PIN DESCRIPTION

1 drain
2 gate
3 source, connected to flange

handbook, halfpage

Top view

1

2

Fig.1 Simplified outline.

3

MBK394

DESCRIPTION

90 W LDMOS power transistor for base station
applications at frequencies from 2000 to 2200 MHz.

QUICK REFERENCE DATA

Typical RF performance at Th=25°C in a common source class-AB test circuit.

MODE OF OPERATION

2-tone, class-AB f

f

(MHz)

= 2170; f2= 2170.1 28 750 90 (PEP) 12.8 35.7 −28.5 −

1

V

(V)

DS

I

DQ

(mA)

P

(W)

L

G

p

(dB)

η

(%)

D

d

(dBc)

im

ACLR

(dBc)

W-CDMA, 3GPP test
model 1, 64 channels

2140 28 750 15 (AV) 13.2 20 −−40

with 66% clipping

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

5

2003 Feb 24 2

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2022-90

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER MIN. MAX. UNIT

V

DS

V

GS

I

D

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-c

R

th c-h

Notes

1. Thermal resistance is determined under specified RF operating conditions.

2. Depending on mounting conditions.

drain-source voltage − 65 V
gate-source voltage −±15 V
DC drain current − 12 A
storage temperature −65 +150 °C
junction temperature − 200 °C

thermal resistance from junction to case Th=25°C; note 1 0.65 K/W
thermal resistance from case to heatsink Th=25°C; note 2 0.2 K/W

CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GSth

I

DSS

I

DSX

I

GSS

g

fs

R

DSon

C

rs

drain-source breakdown voltage VGS= 0; ID= 2.1 mA 65 −−V
gate-source threshold voltage VDS= 10 V; ID= 210 mA 4.4 − 5.5 V
drain-source leakage current VGS= 0; VDS=26V −−15 µA
on-state drain current VGS=V

+9V; VDS=10V 27 −−A

GSth

gate leakage current VGS= ±15 V; VDS=0 −−38 nA
forward transconductance VDS= 10 V; ID= 7.5 A − 6.2 − S
drain-source on-state resistance VGS=V

+9V; ID= 7.5 A − 0.1 −Ω

GSth

feedback capacitance VGS= 0; VDS= 26 V; f = 1 MHz − 5.1 − pF

APPLICATION INFORMATION

RF performance in a common source class-AB circuit. T

MODE OF OPERATION

2-tone, class-AB f

= 2170; f2= 2170.1 28 750 90 (PEP) >11 >30 ≤−25

1

f

(MHz)

=25°C; R

h

V

DS

(V)

= 0.65 K/W; unless otherwise specified.

th j-c

I

DQ

(mA)

P

(W)

L

G

p

(dB)

η

(%)

D

d

im

(dBc)

Ruggedness in class-AB operation

The BLF2022-90 iscapable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V

= 28 V; IDQ= 750 mA; PL= 90 W (CW); f = 2170 MHz.

DS

2003 Feb 24 3

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2022-90

15

handbook, halfpage

G

p

(dB)

14

13

12

11

10

0 40 120

VDS= 28 V; IDQ= 750 mA; Th=25°C;

= 2170 MHz; f2= 2170.1 MHz.

f

1

80

MLD837

η

D

G

p

PL (PEP) (W)

Fig.2 Powergainanddrainefficiencyasfunctions

of peak envelope load power; typical
values.

50

η

(%)

40

30

20

10

0

D

handbook, halfpage

0

d

im

(dBc)

−20

−40

−60

−80

040

VDS= 28 V; IDQ= 750 mA; Th=25°C;

= 2170 MHz; f2= 2170.1 MHz.

f

1

80 120

MLD838

d

3

d

5

d

7

P

(PEP) (W)

L

Fig.3 Intermodulation distortion as a function of

peak envelope load power; typical values.

15

handbook, halfpage

G

p

(dB)

14

G

p

(1)

(2)

13

12

11

10

0 40 120

VDS= 28 V; Th=25°C;

= 2170 MHz; f2= 2170.1 MHz.

f

1

(1) I

= 900 mA.

DQ

(2) IDQ= 750 mA.

(3)

(4)

(5) (6)

= 600 mA.

(3) I

DQ

(4) IDQ= 600 mA.

80

MLD839

η

D

PL (PEP) (W)

(5) IDQ= 750 mA.
(6) IDQ= 900 mA.

Fig.4 Powergainanddrainefficiencyasfunctions

of peak envelope load power; typical
values.

50

η

(%)
40

30

20

10

0

D

handbook, halfpage

0

d

im

(dBc)

−20

−40

−60

−80

040

VDS= 28 V; Th=25°C;

= 2170 MHz; f2= 2170.1 MHz.

f

1

(1) IDQ= 600 mA. (2) IDQ= 900 mA. (3) IDQ= 750 mA.

(1)
(2)

(3)

80 120

MLD840

PL (PEP) (W)

Fig.5 Third order intermodulation distortion as a

function of peak envelope load power;
typical values.

2003 Feb 24 4

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2022-90

P

L(AV)

MLD833

(dBm)

15

handbook, halfpage

G

p

(dB)

10

5

0

25

Single carrier W-CDMA performance.
VDS=28V;IDQ= 750 mA; Th=25°C; f = 2140 MHz.
Input signal: 3GPP W-CDMA 1-64DPCH with 66% clipping;

peak to average power ratio: 8.5 dB at 0.01% probability on
CCDF; channel spacing/bandwidth = 5 MHz / 3.84 MHz.

Measured in a W-CDMA application circuit.

G

p

η

D

30 35 4540

Fig.6 Powergainanddrainefficiencyasfunctions

of average load power; typical values.

30

20

10

0

η

(%)

40

P

L(AV)

MLD834

(dBm)

0

handbook, halfpage

D

ACLR

(dBc)

−20

−40

−60

−80

25 30

Single carrier W-CDMA performance.
VDS=28V;IDQ= 750 mA; Th=25°C; f = 2140 MHz.
Input signal: 3GPP W-CDMA 1-64DPCH with 66% clipping;

peak to average power ratio: 8.5 dB at 0.01% probability on
CCDF; channel spacing/bandwidth = 5 MHz / 3.84 MHz.

Measured in a W-CDMA application circuit.

ACLR

5

ACLR

10

35 45

Fig.7 Adjacentchannel leakage ratio (ACLR5and

ACLR10)as function of average load power;
typical values.

2003 Feb 24 5

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2022-90

handbook, halfpage

4

Z

i

(Ω)

3

x

i

2

1

0

1.8 1.9

VDS= 28 V; ID= 750 mA; PL= 90 W; Th=25°C.

r

i

2.1 2.2

2

MLD835

f (GHz)

Fig.8 Input impedance as a function of frequency

(series components); typical values.

2.3

handbook, halfpage

4

Z

L

(Ω)

2

0

−2

−4

1.8 1.9

VDS= 28 V; ID= 750 mA; PL= 90 W; Th=25°C.

2

2.1 2.2

MLD836

R

L

X

L

f (GHz)

Fig.9 Load impedance as a function of frequency

(series components); typical values.

2.3

handbook, full pagewidth

input
50 Ω

L20

C3

C4

L2

L1 L3

R1

L4

L6

L5 L7

C1C2

C5

V

gate

L10

L8

L9

Fig.10 Class-AB test circuit at f = 2.2 GHz.

2003 Feb 24 6

L11

L13

F1

R2

C10

C11 C12

C9

L15

L14L12

C6

L16

L17

C8

L18 L19

C7

C13 C14

MGS920

output

50 Ω

V

DD

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2022-90

List of components (See Figs 10 and 11)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C2, C6, C7 Tekelec variable capacitor; type 37281 0.4 to 2.5 pF
C3, C8 multilayer ceramic chip capacitor; note 1 12 pF
C4, C9 multilayer ceramic chip capacitor; note 2 12 pF
C5, C12 electrolytic capacitor 10 µF; 100 V 2222 037 59109
C10 multilayer ceramic chip capacitor; note 1 1 nF
C11 multilayer ceramic chip capacitor 100 nF 2222 581 16641
C13 tantalum SMD capacitor 4.5 µF; 50 V
C14 electrolytic capacitor 100 µF; 63 V 2222 037 58101
F1 Ferroxcube chip-bead 8DS3/3/8/9-4S2 4330 030 36301
L1 stripline; note 3 50 Ω 2.9× 2.4 mm
L2 stripline; note 3 14.5 Ω 4 × 11.7 mm
L3 stripline; note 3 50 Ω 3.7× 2.4 mm
L4 stripline; note 3 6 Ω 2 × 30.8 mm
L5 stripline; note 3 50 Ω 3.6× 2.4 mm
L6 stripline; note 3 9.5 Ω 3 × 18.8 mm
L7 stripline; note 3 50 Ω 7.8× 2.4 mm
L8 stripline; note 3 9.8 Ω 4 × 18.3 mm
L9 stripline; note 3 24.4 Ω 5 × 6.3 mm
L10, L11 stripline; note 3 5.1 Ω 7 × 37 mm
L12 stripline; note 3 25.4 Ω 10.1 × 6mm
L13 stripline; note 3 5.7 Ω 2.4 × 32.8 mm
L14 stripline; note 3 25.4 Ω 7.4 × 6mm
L15 stripline; note 3 11.3 Ω 2.5 × 15.6 mm
L16 stripline; note 3 50 Ω 10.8 × 2.4 mm
L17 stripline; note 3 16.1 Ω 3 × 10.4 mm
L18 stripline; note 3 50 Ω 2.3 × 2.4 mm
L19 stripline; note 3 50 Ω 3 × 2.4 mm
L20 stripline; note 3 50 Ω 5.5 × 2.4 mm
R1, R2 metal film resistor 10 Ω, 0.6 W 2322 156 11009

Notes

1. American Technical Ceramics type 100B or capacitor of same quality.

2. American Technical Ceramics type 100A or capacitor of same quality.

3. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (ε

2003 Feb 24 7

= 2.2); thickness 0.79 mm.

r

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2022-90

handbook, full pagewidth

50

INPUT

PH990109

V

GS

OUTPUT

PH990110

V

DD

50

95

C14

C5

R1

C4

C3

C2

INPUT

C1

C13

PH990109

Dimensions in mm.
The components aresituatedon one side of the copper-clad printed-circuit board with Teflondielectric(εr= 2.2), thickness 0.79 mm.

The other side is unetched and serves as a ground plane.

R2

C12

F1

C10

C9

C6

OUTPUT

C7

PH990110

MGU538

C11

C8

Fig.11 Component layout for 2.2 GHz class-AB test circuit.

2003 Feb 24 8

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2022-90

PACKAGE OUTLINE

Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A

D

A

3

D

1

U

1

q

1

H

U

2

A

2

b

w

M M

C

2

0 5 10 mm

scale

F

B

C

L

p

w

M M M

AB

1

c

E

1

Q

E

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

inches

A

4.72

3.43

0.186

0.135

OUTLINE
VERSION

SOT502A

12.83

12.57

0.505

0.495

c

Db

20.02

19.61

0.788

0.772

19.96

19.66

0.786

0.774

0.15

0.08

0.006

0.003

IEC JEDEC JEITA

D

1

EE

9.53

9.50

9.25

9.30

0.375

0.374

0.364

0.366

REFERENCES

1

1.14

0.89

0.045

0.035

F

H

19.94

18.92

0.785

0.745

2003 Feb 24 9

L

5.33

4.32

0.210

0.170

p

3.38

3.12

0.133

0.123

Q

1.70

1.45

0.067

0.057

qw

U

1

34.16

33.91

1.345

1.335

EUROPEAN

PROJECTION

w

U

2

9.91

9.65

0.390

0.380

0.25 0.5127.94

0.01 0.021.100

2

1

ISSUE DATE

99-12-28
03-01-10

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2022-90

DATA SHEET STATUS

LEVEL

DATA SHEET

STATUS

(1)

PRODUCT

STATUS

(2)(3)

DEFINITION

I Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

III Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determinesthe data sheet status.

DEFINITIONS

DISCLAIMERS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limitingvalues given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseor at any other conditions abovethosegivenin the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswill be
suitable for the specified use without further testing or
modification.

Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected toresult in personalinjury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2003 Feb 24 10

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2022-90

NOTES

2003 Feb 24 11

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [e-mail].

© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 613524/03/pp12 Date of release:2003 Feb 24 Document order number: 9397750 10923

SCA75