Philips blf2022 70 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D379
BLF2022-70
UHF power LDMOS transistor
Preliminary specification 2000 Sep 21
Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF2022-70
FEATURES
• High power gain
• Easy power control
• Excellent ruggedness
• Designed for broadband operation (2.0 to 2.2 GHz).
• Internal input and output matching for high gain and
efficiency
APPLICATIONS
• Common source class-AB operation for PCN and PCS
applications in the 2000 to 2200 MHz frequency range.
• W-CDMA, CDMA and multicarrier applications.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange SOT502A
package with a ceramic cap. The common source is
connected to the mounting flange.
PINNING
PIN DESCRIPTION
1drain
2gate
3 source connected to flange
handbook, halfpage
Top view MBK394
1
2
Fig.1 Simplified outline SOT502A.
3
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
Two-tone, class-AB f
=25°C in a common source test circuit.
h
f
(MHz)
= 2200; f2= 2200.1 28 65 (PEP) >10.5 >30 ≤−25
1
V
(V)
DS
P
(W)
L
G
p
(dB)
η
(%)
D
d
im
(dBc)
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2000 Sep 21 2
Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF2022-70
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
DS
V
GS
I
D
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-h
Note
1. Determined under specified RF operating conditions.
drain-source voltage − 65 V
gate-source voltage −±15 V
DC drain current − 9A
storage temperature −65 +150 °C
junction temperature − 200 °C
thermal resistance from junction to heatsink Th=25°C, P
= 152 W, note 1 1.15 K/W
tot
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
C
rss
drain-source breakdown voltage VGS=0; ID=1.4mA 65 −−V
gate-source threshold voltage VDS=10V; ID= 140 mA 4.5 − 5.5 V
drain-source leakage current VGS=0; VDS=26V −−10 µA
on-state drain current VGS=V
+9V; VDS=10V 18 −−A
GSth
gate leakage current VGS= ±15 V; VDS=0 −−22 nA
forward transconductance VDS=10V; ID=5A − 4 − S
drain-source on-state resistance VGS=V
+9V; ID=5A − 0.17 −Ω
GSth
feedback capacitance VGS=0; VDS=26V; f=1MHz − 3.4 − pF
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
MODE OF OPERATION
Two-tone, class-AB f
= 2200; f2= 2200.1 28 500 65 (PEP) >10.5 >30 ≤−25
1
f
(MHz)
=25°C; R
h
V
DS
(V)
th j-h
I
DQ
(mA)
= 1.15 K/W; unless otherwise specified.
P
(W)
L
G
(dB)
p
η
(%)
D
(dBc)
d
im
Ruggedness in class-AB operation
The BLF2022-70 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V
=26V; IDQ= 500 mA; PL= 65 W (CW); f = 2200 MHz.
DS
2000 Sep 21 3
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